JPS62141790A - Ceramic displacement element - Google Patents
Ceramic displacement elementInfo
- Publication number
- JPS62141790A JPS62141790A JP60283875A JP28387585A JPS62141790A JP S62141790 A JPS62141790 A JP S62141790A JP 60283875 A JP60283875 A JP 60283875A JP 28387585 A JP28387585 A JP 28387585A JP S62141790 A JPS62141790 A JP S62141790A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- displacement
- layers
- phase
- antiferroelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006073 displacement reaction Methods 0.000 title claims abstract description 25
- 239000000919 ceramic Substances 0.000 title claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 230000005684 electric field Effects 0.000 claims abstract description 6
- 239000004020 conductor Substances 0.000 claims abstract description 4
- 230000007704 transition Effects 0.000 claims abstract description 4
- 238000010030 laminating Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 239000011229 interlayer Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 229910052697 platinum Inorganic materials 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 3
- 239000007772 electrode material Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
- C04B35/491—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
- C04B35/493—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT containing also other lead compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/768—Perovskite structure ABO3
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は微小変位を低電圧でデンタル的に制御する素
子に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an element that dentally controls minute displacements with low voltage.
（従来の技術）
従来、微小及位金低電圧で制御する素子として圧ｔめゐ
いは電歪効果ケ有するセラミックスの積層体が使用され
てきた。第２図は上記従来の微小変位素子の断ｒ：ｆＪ
を示すもので、図中２１は圧電あるいはて歪効果？有す
るセラミック材料の薄層、２２は金属電極層と示してい
る。そして２２ばぶ子側面で一層おきに電導体２３及び
２４を用いて電気的に接続されている。２３及び２４か
ら取シ出された電極端子２５及び２６の間に電圧を印加
すると素子は電圧の大きさに応じて高さ方間（て浬び、
同時に横方向に縮む。(Prior Art) Hitherto, a ceramic laminate having a pressure T or an electrostrictive effect has been used as an element to be controlled by microscopic and low voltage. Figure 2 shows the cross section r: fJ of the above conventional micro displacement element.
Is 21 in the figure a piezoelectric or strain effect? 22 is designated as a metal electrode layer. Electrical connections are made using conductors 23 and 24 at every other layer on the side surface of the 22-layer connector. When a voltage is applied between the electrode terminals 25 and 26 taken out from the electrode terminals 23 and 24, the element will move vertically depending on the magnitude of the voltage.
At the same time, it shrinks laterally.
（発明が解決しようとする問題点〕
ところで本素子は変位量をアナログ的に制御出来る特Ｗ
ＩＬを有する反面、一定の変位量を精度よく発生させる
のは困難でりる。即ら印加’！ｔｉｆの大きさによって
発生変位が決定されるため、所望の一定量の変位を発生
させるには印刀０’、ＩＣ圧の太ささ全精度よく調整す
る必要がろる。(Problem to be solved by the invention) By the way, this element has a special feature that allows the amount of displacement to be controlled in an analog manner.
Although it has an IL, it is difficult to generate a constant amount of displacement with high precision. Immediately apply '! Since the generated displacement is determined by the magnitude of tif, in order to generate a desired constant amount of displacement, it is necessary to adjust the thickness of the stamp 0' and the IC pressure with high accuracy.
本発明の目的はこの問題点ｆ：解決し１ヒ低電圧で駆動
できるデジタル変位制御素子を提供する事にるる。The object of the present invention is to solve this problem and provide a digital displacement control element that can be driven at a low voltage.
（問題点を解決するための手段）
この発明の交誼とするところは電界を印加すると反強誘
電相から強誘電相に相転移（７、同時に体積杉張を伴う
材料を用いて金属電極層とともに積層体を構図すること
にある。この積層体は第２図に示した従来の微小変位素
子と同一の構造をとる。(Means for Solving the Problems) The intersection of this invention is that when an electric field is applied, the phase changes from the antiferroelectric phase to the ferroelectric phase (7. The object of the present invention is to construct a laminated body. This laminated body has the same structure as the conventional micro-displacement element shown in FIG.
（作用）
例えば組成がＰｂｏ、ｓｏ Ｎｂ（Ｌｏ＝ （（Ｚｒ
ｏ、ａ Ｓｎ０．４ ） ０．９４ Ｔｉｕ、ｎｏ）。(Function) For example, if the composition is Pbo, so Nb (Lo= ((Zr
o, a Sn0.4) 0.94 Tiu, no).
Ｑ８０．で表わされる反強誘電体は約３ＫＶ／ｍｍの電
界全印加すると強誘電相に相転移し、同時に電界方向に
０．１５％程度の歪を生じ、電界を除去すｆ４を渭いて
積層体を構成すればイを電圧で駆動出来るデジタル変位
素子が得られる。Q80. When the antiferroelectric material represented by If configured, a digital displacement element that can drive A with voltage can be obtained.
相転移を起こすのに必要な電界強度は材料に固有のもの
でめｐ、通常数Ｋ Ｖ ／ ｍｍ と大きい。従って
積ノー構造金採用することにより対向する′ｆ１！極間
距離を狭くすれば駆動電圧の低電圧化をはかる事が期待
される。The electric field strength required to cause a phase transition is specific to the material and is usually as large as several KV/mm. Therefore, by adopting no product structure metal, 'f1! If the distance between the electrodes is narrowed, it is expected that the driving voltage can be lowered.
（実施例） 以下実施例に従って本発明の詳細な説明を行なう。(Example) The present invention will be described in detail below according to Examples.
組成がＰＤｏ、ｏｓ ＮｂｃＬｕｎ （（Ｚｒｏ、ａ
ＳｎＱ、４）０．９４ ’Ｉ’ｉｏ、ｏａ）ｏ、ｉ＋ａ
Ｏ３が表わされる反ＶＳ電セラミックスと白金電極層と
から先の第２図に示した様な積層体を病成し丸。本実施
例では各１を極層の層間距離を５０Ｐとし、素子の高さ
を２Ｑｍｍとした。The composition is PDo, os NbcLun ((Zro, a
SnQ, 4) 0.94 'I'io, oa) o, i+a
A laminate as shown in FIG. 2 is formed from the anti-VS electroceramics in which O3 is expressed and the platinum electrode layer. In this example, the interlayer distance of each pole layer was 50P, and the height of the element was 2Qmm.
第１図は本発明の実施例を示すもので、素子の印加電圧
と高さ方向の変位量の開法を表わしている。印加電圧を
除々に増大させても１００Ｖ以下のさ方向に伸びる。臨
界電圧以上の電圧では電圧が変化しても変位量は一定で
、５る。次に電圧を減少させると約５０Ｖまでの範囲で
は変位量は一定値を保つが、これ以下になると突然変位
は零となり素子は元の寸法に戻る。FIG. 1 shows an embodiment of the present invention, and shows a method for determining the voltage applied to the element and the amount of displacement in the height direction. Even if the applied voltage is gradually increased, it will extend in the horizontal direction by 100V or less. At a voltage higher than the critical voltage, the amount of displacement is constant even if the voltage changes, and is 5. Next, when the voltage is decreased, the amount of displacement remains constant in the range up to about 50V, but below this value, the displacement suddenly becomes zero and the element returns to its original dimensions.
（発明の効果）
本発明の変位素子は実施例から明らかな様に反強誘電相
から強誘電相へ相転移を起こすのに必要な臨界電界強度
以上の電圧を印加すれば、電圧がどの様に変化しても変
位量が変化しない。(Effects of the Invention) As is clear from the embodiments, the displacement element of the present invention changes the voltage by applying a voltage equal to or higher than the critical electric field strength required to cause a phase transition from an antiferroelectric phase to a ferroelectric phase. The amount of displacement does not change even if the
また積層構造体とすることにニジ駆動電圧が大幅に低下
する。Furthermore, the multi-layered structure significantly reduces the continuous driving voltage.
体化したものであシ、低電圧駆動用デジタル変位素子に
応用できる。This material can be applied to digital displacement elements for low voltage drive.
第１図は本発明の実施例に係る印加電圧と高さ方向変位
量との関係を示す図である。また第２図は積層型変位素
子の基本構造を示す図。
図中、２１は圧電、電歪あるいは反強誘電体、２２は金
属電極層、２３．２４は各金属成極層を電気的に接続す
る導体、そして２５．２６は各々２３゜２４〃・ら取り
出された電極端子を示している。
代理人弁理士内 原 晋 １″′
に１．・４−・′
＼−−゛′
第１図
印加電圧（Ｖ）FIG. 1 is a diagram showing the relationship between the applied voltage and the amount of displacement in the height direction according to an embodiment of the present invention. FIG. 2 is a diagram showing the basic structure of a laminated displacement element. In the figure, 21 is a piezoelectric, electrostrictive, or antiferroelectric material, 22 is a metal electrode layer, 23.24 is a conductor that electrically connects each metal polarization layer, and 25.26 is 23°, 24. The electrode terminal taken out is shown. Susumu Hara, Patent Attorney Agent 1″′ に 1.・4−・′ ＼−−゛′ Figure 1 Applied voltage (V)
Claims (2)
体の薄層と金属電極層とが交互に積層一体化されて形成
されることを特徴とするデジタル変位素子。(1) A digital displacement element characterized in that it is formed by alternately laminating and integrating thin antiferroelectric layers and metal electrode layers that undergo a phase transition to a ferroelectric phase when an electric field is applied.
接続されている特許請求の範囲第１項記載のセラミック
変位素子。(2) The ceramic displacement element according to claim 1, wherein every other metal electrode layer is connected to the same conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60283875A JPS62141790A (en) | 1985-12-16 | 1985-12-16 | Ceramic displacement element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60283875A JPS62141790A (en) | 1985-12-16 | 1985-12-16 | Ceramic displacement element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62141790A true JPS62141790A (en) | 1987-06-25 |
Family
ID=17671303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60283875A Pending JPS62141790A (en) | 1985-12-16 | 1985-12-16 | Ceramic displacement element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62141790A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5729262A (en) * | 1993-08-31 | 1998-03-17 | Ricoh Company, Ltd. | Ink jet head including phase transition material actuators |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5926439A (en) * | 1982-08-05 | 1984-02-10 | 田中貴金属工業株式会社 | Case for mailing sealed letter type article |
-
1985
- 1985-12-16 JP JP60283875A patent/JPS62141790A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5926439A (en) * | 1982-08-05 | 1984-02-10 | 田中貴金属工業株式会社 | Case for mailing sealed letter type article |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5729262A (en) * | 1993-08-31 | 1998-03-17 | Ricoh Company, Ltd. | Ink jet head including phase transition material actuators |
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