JPS62133659A - Electron microscope with neutral particle beam radiating device - Google Patents

Electron microscope with neutral particle beam radiating device

Info

Publication number
JPS62133659A
JPS62133659A JP60274683A JP27468385A JPS62133659A JP S62133659 A JPS62133659 A JP S62133659A JP 60274683 A JP60274683 A JP 60274683A JP 27468385 A JP27468385 A JP 27468385A JP S62133659 A JPS62133659 A JP S62133659A
Authority
JP
Japan
Prior art keywords
electron beam
intermediate chamber
sample
gas molecules
neutral particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60274683A
Other languages
Japanese (ja)
Inventor
Toshikazu Honda
本田 敏和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd filed Critical Jeol Ltd
Priority to JP60274683A priority Critical patent/JPS62133659A/en
Publication of JPS62133659A publication Critical patent/JPS62133659A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To realize an optimum design and improve the resolution without resticting the form of a pole piece for an object lens, by forming a gaseous layer on the electron beam optical axis, and radiating the electron beams to the gaseous layer. CONSTITUTION:On the way that electron beams 3 pass through an intermediate chamber 8, the electron beams strike to the accumulated gas molecules g in the intermediate chamber 8, giving the speed V1 in the direction of the electron beam passing to the gas molecules g. When the initial speed of the gas molecules g is V0, the given speed V=V0+V1. Furthermore, since the electrons which passed through a differential exhaust throttle 7 and the gas molecules repeat striking again and again to accelerate the speed of the gas molecules g, almost all the gas molecules g are converted into neutral particle beams 3' and radiated over the sample 5. The neutral particles radiated over the sample strike to the sample with a kinetic energy mv<2>. Since such neutral particles are not charged, they flow straightly without deflection in the magnetic field of the object lens, and irradiate the analysis point, or the electron beam radiating point accurately. Therefore, the gas and impurities attached over the sample 5 are removed, and a clean sample can be observed.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は中性粒子線によって試料を照射するようにした
電子顕微鏡に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an electron microscope in which a sample is irradiated with a neutral particle beam.

[従来技術] 電子顕微鏡等においては、対物レンズの横又は斜め上方
にイオン発生装置を取り付け、イオン発生装置よりのイ
オンを試料に照射し、試料表面に付着したガス、汚染物
等をクリーニングして試料の清浄化を行なっている。
[Prior art] In an electron microscope, etc., an ion generator is attached to the side or diagonally above the objective lens, and the sample is irradiated with ions from the ion generator to clean gases, contaminants, etc. that have adhered to the sample surface. The sample is being cleaned.

[発明が解決しようとする問題点] このように構成された装置では、対物レンズの横又は斜
め上方にイオン発生装置が取り付けられるため、対物レ
ンズ用ポールピースの形状に制限が加えられる。そのた
め、対物レンズ用ポールピースを設計する際に、これら
を考慮して設計しなければならず分解能の向上に制限を
受ける。又、イオンを試料の電子線照射点に照射して試
料の清浄化を行なう場合に、僅かではあるがイオンが対
物レンズの磁場中で偏向を受け、イオンが目的とする分
析点、即ち電子線照射点を照射せず分析点とは異なった
点を照射してしまう。従って、イオンが偏向を受けてい
る場合は、試料の分析点にイオンを照射した後、該イオ
ン照射点を電子線照射点として分析する場合、ガスや不
純物が付着したクリーニングが行なわれていない分析点
を分析してしまうという問題点があった。
[Problems to be Solved by the Invention] In the device configured in this way, the ion generator is attached to the side or diagonally above the objective lens, so there are restrictions on the shape of the objective lens pole piece. Therefore, when designing the pole piece for the objective lens, these must be taken into consideration, which limits the improvement in resolution. In addition, when cleaning a sample by irradiating ions onto the electron beam irradiation point of the sample, the ions are deflected, albeit slightly, in the magnetic field of the objective lens, causing the ions to reach the target analysis point, that is, the electron beam. Instead of irradiating the irradiation point, a point different from the analysis point is irradiated. Therefore, if the ions are deflected, if the analysis point of the sample is irradiated with ions and then analyzed using the ion beam irradiation point as the electron beam irradiation point, it is necessary to analyze the sample with gases or impurities that have not been cleaned. There was a problem with analyzing points.

本発明は以上の点に鑑みなされたもので、対物レンズ用
ポールピースの形状に制限を加えられることなく最適設
計を可能にして分解能の向上を図ると共に試料の分析点
の清浄化を確実に行なう装置を提供することを目的とし
ていてる。
The present invention has been made in view of the above points, and enables an optimal design without imposing restrictions on the shape of the pole piece for an objective lens, thereby improving resolution and reliably cleaning the analysis point of the sample. The purpose is to provide equipment.

[問題点を解決するための手段] 本問題点を解決するための本発明の構成は、鏡体内の比
較的高真空に排気された2つの室の間に前記2つの室よ
りは低輿空に排気される中間室と、該中間室にガス層を
形成させるために接続されたガス供給手段と、該中間室
の上方に設けられた電子線発生源とを備え、前記電子線
発生源よりの電子線を前記中間室に形成されたガス層に
照射し、該電子線照射により加速された中性粒子線を発
生させ、該中性粒子線を中間室より下方に配置された試
料に照射するように構成したことを特徴としている。
[Means for Solving the Problems] The configuration of the present invention for solving the problems is such that between two chambers evacuated to a relatively high vacuum inside the mirror body, a vacuum space lower than that of the two chambers is provided. an intermediate chamber that is evacuated to irradiate the gas layer formed in the intermediate chamber with an electron beam, generate a neutral particle beam accelerated by the electron beam irradiation, and irradiate the sample placed below the intermediate chamber with the neutral particle beam. It is characterized by being configured to do so.

[実施例1] 以下本発明の実施例を図面に基づき詳述する。[Example 1] Embodiments of the present invention will be described in detail below based on the drawings.

第1図は本発明の一実施例の概略構成図である。FIG. 1 is a schematic diagram of an embodiment of the present invention.

第1図おいて、1は鏡体で、2は図示しない電子線発生
源よりの電子線3を細く絞るための集束レンズである。
In FIG. 1, 1 is a mirror body, and 2 is a focusing lens for focusing an electron beam 3 from an electron beam generation source (not shown).

4は対物レンズで、5は対物レンズ4内に配置された試
料である。6及び7は差動排気絞りで、該差動排気絞り
6及び7によって中間室8が形成され、中間室8以外の
電子線発生源側と対物レンズ側の室は図示外の排気装置
により例えば1O−7Torrの比較的高真空に排気さ
れる。
4 is an objective lens, and 5 is a sample placed inside the objective lens 4. Reference numerals 6 and 7 denote differential exhaust apertures, and an intermediate chamber 8 is formed by the differential exhaust apertures 6 and 7. The chambers on the electron beam source side and the objective lens side other than the intermediate chamber 8 are e.g. It is evacuated to a relatively high vacuum of 10-7 Torr.

9はバルブ10を介して中間v8に接続されたターボ分
子ポンプ等の排気ポンプで、該排気ポンプ9によって中
間室8は高真空に排気される。11は内部に例えば高圧
の窒素(N2)ガスが充填されたガス容器で、ガス容器
11内の窒素ガスGは減圧弁12.バルブ13、ノズル
14を介して中間室8内に導入され、例えば10’To
rr程度の圧力に維持される。
Reference numeral 9 denotes an exhaust pump such as a turbo molecular pump connected to the intermediate chamber v8 via a valve 10, and the intermediate chamber 8 is evacuated to a high vacuum by the exhaust pump 9. 11 is a gas container filled with, for example, high-pressure nitrogen (N2) gas, and the nitrogen gas G in the gas container 11 is supplied to a pressure reducing valve 12. Introduced into the intermediate chamber 8 via the valve 13 and the nozzle 14, for example 10'To
The pressure is maintained at about rr.

以上のように構成された装置において、中間室8の圧力
P(Torr)は、ノズル14よりの突出ガスff1Q
(TOrr−Q/5ec)、排気ポンプ9の排気速度S
 (Q/5ea)とすると、P = Q/S の窒素ガスが滞留して中間室内にガス層が形成される。
In the apparatus configured as described above, the pressure P (Torr) in the intermediate chamber 8 is as follows:
(TOrr-Q/5ec), exhaust speed S of exhaust pump 9
(Q/5ea), nitrogen gas of P=Q/S stays and a gas layer is formed in the intermediate chamber.

この状態で、電子線3が中間室8に入射すると、中間室
8を通過する過程で電子線は中間室内に滞留したガス分
子Qに衝突し、ガス分子qに電子線通過方向の速度Vl
を与える。ここで、ガス分子Qが有する初速度をVQと
すると、V=VQ +Vlで与えられる。
In this state, when the electron beam 3 enters the intermediate chamber 8, in the process of passing through the intermediate chamber 8, the electron beam collides with the gas molecules Q retained in the intermediate chamber, causing the gas molecules q to have a velocity Vl in the electron beam passing direction.
give. Here, if the initial velocity of the gas molecule Q is VQ, it is given by V=VQ +Vl.

又、差動排気絞り7を通過した電子とガス分子Qはさら
に衝突を繰り返えしてガス分子Qを加速するため、はと
んどのガス分子Qは第1図に示すように中性粒子線3′
 となって試料5を照射する。
In addition, since the electrons and gas molecules Q that have passed through the differential exhaust aperture 7 repeatedly collide and accelerate the gas molecules Q, most of the gas molecules Q become neutral particles as shown in Figure 1. line 3'
Then, the sample 5 is irradiated.

この試料を照射する中性粒子はmV2の運動エネルギー
により試料に衝突する。このような中性粒子は、電荷を
有していないため、対物レンズの磁場中で偏向を受ける
ことはな(直進して、分析点である電子線照射点を正確
に照射する。
Neutral particles that irradiate this sample collide with the sample with a kinetic energy of mV2. Since such neutral particles have no electric charge, they are not deflected in the magnetic field of the objective lens (they travel straight and accurately irradiate the electron beam irradiation point, which is the analysis point).

ところで、電子線3によって加速された中性粒子線3′
の線径は電子線3の線径で決定され、又、電子線は非常
に高密度なので中性粒子線の線径。
By the way, the neutral particle beam 3' accelerated by the electron beam 3
The wire diameter is determined by the wire diameter of the electron beam 3, and since the electron beam has a very high density, the wire diameter of the neutral particle beam.

中性粒子線昂笠の可変を任意に行なうことができる。従
って、試料表面上の分析点に中性粒子線を照射してクリ
ーニングした後、該中性粒子線による照射点を電子線の
照射点として分析すれば、試料5の表面に付着したガス
や不純物をとり取り除かれた清浄な試料を観察すること
ができる。又、この様に構成された装置では、対物レン
ズ用ポールピースの近傍に従来装置のようにイオン照射
装置を取り付けなくてもよいためポールピースの形状を
最適な形状で設計にすることができるため分解能を向上
することかできる。
The neutral particle beam shade can be arbitrarily varied. Therefore, if the analysis point on the sample surface is irradiated with a neutral particle beam to clean it, and then the point irradiated with the neutral particle beam is analyzed as the irradiation point with an electron beam, gases and impurities attached to the surface of the sample 5 can be removed. The clean sample that has been removed can be observed. In addition, with a device configured in this way, unlike conventional devices, there is no need to install an ion irradiation device near the objective lens pole piece, so the shape of the pole piece can be designed in the optimal shape. It is possible to improve resolution.

[実施例2] 第2図は本発明の他の実施例を示す概略構成図で、第1
図に示す実施例装置と同一構成要素には同一番号を付し
てその説明を省略する。第2図の実施例装置では、中間
室8の上方に2段の電子線偏向コイル15.16が配置
されている。
[Example 2] Figure 2 is a schematic configuration diagram showing another example of the present invention.
Components that are the same as those of the embodiment shown in the figures are given the same numbers and their explanations will be omitted. In the embodiment shown in FIG. 2, two electron beam deflection coils 15 and 16 are arranged above the intermediate chamber 8.

このように構成された装置では、第2図に(イ)及び(
ロ)で示すように電子線偏向コイル15゜16によって
電子線3を偏向させて中間室8のガス層を照射すること
ができる。そのため、偏向された電子線3によって中性
粒子線の飛行方向を変えることができ、従って中性粒子
線によって試料表面を走査することができる。この走査
に伴って試料より発生する試料情報を検出器17によっ
て検出して表示装置に表示すれば、中性粒子線照射によ
る例えば2次電子像等による走査像を表示して面分析を
行なうことができる。
In a device configured in this way, (a) and (a) are shown in Fig. 2.
As shown in (b), the electron beam 3 can be deflected by the electron beam deflection coils 15 and 16 to irradiate the gas layer in the intermediate chamber 8. Therefore, the flight direction of the neutral particle beam can be changed by the deflected electron beam 3, and therefore the sample surface can be scanned by the neutral particle beam. If the sample information generated from the sample in conjunction with this scanning is detected by the detector 17 and displayed on the display device, a scanned image such as a secondary electron image by neutral particle beam irradiation can be displayed and surface analysis can be performed. I can do it.

尚、上記の実施例は例示であり変形が可能である。上記
実施例では中間室8の上方に電子線偏向コイルを配置し
て電子線を偏向して中間室8のガス層を照射するように
したが、中間室8の下方に電子線偏向コイル(図示しな
い)を配置して電子線のみを偏向させるようにしても良
い。この場合には、中間室8を通過した掻く少い電子は
電子線偏向コイルに偏向されて試料面を照射しないため
、電子線照射による試料情報は発生せず、従って、中性
粒子線照射による試料情報だけを取り出すことができる
It should be noted that the above embodiments are illustrative and can be modified. In the above embodiment, an electron beam deflection coil is arranged above the intermediate chamber 8 to deflect the electron beam and irradiate the gas layer in the intermediate chamber 8. (not shown) may be arranged to deflect only the electron beam. In this case, the few electrons that have passed through the intermediate chamber 8 are deflected by the electron beam deflection coil and do not irradiate the sample surface, so no sample information is generated due to electron beam irradiation, and therefore, no sample information is generated due to electron beam irradiation. Only sample information can be retrieved.

又、中間室8の上方と下方にそれぞれ電子線偏向コイル
を設けても良い。この場合には、上方に設けられた電子
線偏向コイルによって電子線3を偏向して中性粒子線の
飛行方向を変えて試料表面を走査して面分析すると共に
、中間室8の下方に配置した電子線偏向コイルによって
、前記した中間室8を通過した極く少い電子を偏向して
試料面を照射しないようにすれば、電子線照射による試
料情報を除去した面分析を行なうことができる。
Furthermore, electron beam deflection coils may be provided above and below the intermediate chamber 8, respectively. In this case, the electron beam 3 is deflected by the electron beam deflection coil provided above to change the direction of flight of the neutral particle beam to scan the sample surface for area analysis, and the electron beam is placed below the intermediate chamber 8. If the very few electrons that have passed through the intermediate chamber 8 are deflected by the electron beam deflection coil so that they do not irradiate the sample surface, surface analysis can be performed with sample information removed by electron beam irradiation. .

更に上記実施例では、特に中間室を形成してガス層を形
成させたが、光軸上にガス層が形成されておれば良く、
試料を照射する電子線源とは別にガス層を照射する電子
線源を別に設けても良い[発明の効果] 以上詳述した如く本発明によれば、電子線光軸上にガス
層を形成し、該ガス層に電子線を照射するようにしたた
め、対物レンズ用ポールピースの形状に制限が加えられ
ることなく最適設計を可能にして分解能の向上を図ると
共に試料の試料表面の清浄化及び試料の組成分析を確実
に行なう装置が提供される。
Furthermore, in the above embodiments, the gas layer was formed by forming an intermediate chamber, but it is sufficient that the gas layer is formed on the optical axis.
An electron beam source for irradiating a gas layer may be provided separately from an electron beam source for irradiating a sample. [Effects of the Invention] As detailed above, according to the present invention, a gas layer is formed on the optical axis of an electron beam. However, since the gas layer is irradiated with an electron beam, the shape of the pole piece for the objective lens is not restricted, making it possible to optimize the design, improve resolution, and clean the sample surface of the sample. Provided is an apparatus for reliably analyzing the composition of.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の該略構成図、第2図は他の
実施例の概略構成図である。 1:鏡体、2:集束レンズ、3:電子線、4:対物レン
ズ、5:試料、6,7:差動排気絞り、8:中間室、9
:排気ポンプ、10,13:バルブ、11:ガス容器、
12:減圧弁、14:ノズル、15.16:電子線偏向
コイル、17:検出器。
FIG. 1 is a schematic diagram of one embodiment of the present invention, and FIG. 2 is a schematic diagram of another embodiment. 1: Mirror body, 2: Focusing lens, 3: Electron beam, 4: Objective lens, 5: Sample, 6, 7: Differential exhaust aperture, 8: Intermediate chamber, 9
: Exhaust pump, 10, 13: Valve, 11: Gas container,
12: Pressure reducing valve, 14: Nozzle, 15.16: Electron beam deflection coil, 17: Detector.

Claims (2)

【特許請求の範囲】[Claims] (1)鏡体内の比較的高真空に排気された2つの室の間
に前記2つの室よりは低真空に排気される中間室と、該
中間室にガス層を形成させるために接続されたガス供給
手段と、該中間室の上方に設けられた電子線発生源とを
備え、前記電子線発生源よりの電子線を前記中間室に形
成されたガス層に照射し、該電子線照射により加速され
た中性粒子線を発生させ、該中性粒子線を中間室より下
方に配置された試料に照射するように構成したことを特
徴とする中性粒子線照射装置を備えた電子顕微鏡。
(1) Two chambers evacuated to a relatively high vacuum within the mirror body are connected to an intermediate chamber evacuated to a lower vacuum than the two chambers in order to form a gas layer in the intermediate chamber. A gas supply means and an electron beam generation source provided above the intermediate chamber are provided, and the gas layer formed in the intermediate chamber is irradiated with an electron beam from the electron beam generation source, and by the electron beam irradiation. 1. An electron microscope equipped with a neutral particle beam irradiation device, characterized in that it is configured to generate an accelerated neutral particle beam and irradiate the neutral particle beam onto a sample placed below an intermediate chamber.
(2)鏡体内の比較的高真空に排気された2つの室の間
に前記2つの室よりは低真空に排気される中間室と、該
中間室にガス層を形成させるために接続されたガス供給
手段と、該中間室の上方に設けられた電子線発生源と、
該電子線発生源よりの電子線を偏向する手段とを備え、
前記電子線発生源よりの電子線を前記中間室に形成され
たガス層に照射し、該電子線照射により加速された中性
粒子線を発生させると共に電子線を偏向することによっ
て該中性粒子線の進行方向を変化させ、該中性粒子線に
より中間室より下方に配置された試料を走査するように
構成したことを特徴とする中性粒子線照射装置を備えた
電子顕微鏡。
(2) An intermediate chamber that is evacuated to a lower vacuum than the two chambers is connected between two chambers evacuated to a relatively high vacuum in the mirror body in order to form a gas layer in the intermediate chamber. a gas supply means; an electron beam generation source provided above the intermediate chamber;
means for deflecting the electron beam from the electron beam generation source,
A gas layer formed in the intermediate chamber is irradiated with an electron beam from the electron beam generation source, and a neutral particle beam accelerated by the electron beam irradiation is generated and the electron beam is deflected to generate the neutral particles. 1. An electron microscope equipped with a neutral particle beam irradiation device, characterized in that the direction of the beam is changed so that the neutral particle beam scans a sample placed below an intermediate chamber.
JP60274683A 1985-12-06 1985-12-06 Electron microscope with neutral particle beam radiating device Pending JPS62133659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60274683A JPS62133659A (en) 1985-12-06 1985-12-06 Electron microscope with neutral particle beam radiating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60274683A JPS62133659A (en) 1985-12-06 1985-12-06 Electron microscope with neutral particle beam radiating device

Publications (1)

Publication Number Publication Date
JPS62133659A true JPS62133659A (en) 1987-06-16

Family

ID=17545105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60274683A Pending JPS62133659A (en) 1985-12-06 1985-12-06 Electron microscope with neutral particle beam radiating device

Country Status (1)

Country Link
JP (1) JPS62133659A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100358966B1 (en) * 1994-01-13 2003-01-10 가부시키 가이샤 에바라 세이사꾸쇼 Beam Charge Exchange Device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100358966B1 (en) * 1994-01-13 2003-01-10 가부시키 가이샤 에바라 세이사꾸쇼 Beam Charge Exchange Device

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