JPS62122271A - Solid-state image pickup element - Google Patents

Abstract

PURPOSE:To obtain a solid-state image pickup element characterized by excellent characteristics and simple manufacturing processes, by sequentially laminating a photoelectric conversion sensor part and a charge transfer part on a transparent substrate, which is flat and has flexibility. CONSTITUTION:On a flat and flexible transparent substrate 1 such as PET, a transparent conductor film (P-type) such as ITO, is deposited. A non-added N-type amorphous silicon layer 3 is deposited on the film 2. An electrode layer comprising a transition metal is attached by sputtering, evaporation and the like. A part of the electrode layer is etched away by using photoresist and the like, and an electrode 4 is formed. A sensor part, which performs photoelectric conversion, is formed by the elements 2, 3 and 4. A scanning circuit (transfer part) is formed by source electrodes 6, drain electrodes 7, gate electrodes 10 and 12 and gate insulating films 5 and 9. since the flat substrate such as this is used and the most sensitive sensor part can be formed on the substrate, the manufacturing processes are easy and the characteristics become excellent thereby.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application gf] The present invention relates to a solid-state image sensor in which a part of a sensor and a transfer part are laminated on a flat and flexible transparent substrate.

[Prior Art] Conventionally, this type of element has been fabricated on a semiconductor substrate using a MOS type or a CC type.
Generally, a D-type, BBD-type, etc. charge transfer circuit is arranged, and a part of a sensor that performs photoelectric conversion is arranged on top of the charge transfer circuit.

[Problems to be Solved by the Invention] However, in such conventional stacked solid-state image sensing devices, a part of the sensor consisting of the most sensitive photoconductive layer must be formed on a semiconductor transfer circuit with poor flatness. Therefore, the characteristics tend to deteriorate and the manufacturing process becomes complicated. Furthermore, for example, color filters must be pasted onto semiconductor transfer circuits or formed on-wafer, which makes alignment and manufacturing extremely difficult (making the packaging process complicated). Furthermore, since only flat plate-like products can be manufactured, applications (for example, TV cameras, etc.) are limited.

[Means for Solving the Problems] An object of the present invention is to solve the above-mentioned problems and provide a solid-state imaging device that has good characteristics, a simple manufacturing process, and has many uses. . To this end, the present invention provides a flat and flexible transparent substrate, a sensor formed on the substrate that performs photoelectric conversion, and a transfer circuit formed on the sensor that transfers charges formed within the sensor. equip

[Embodiments] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

FIGS. 1A to 1H show an example of the manufacturing process of an embodiment of the solid-state image sensing device of the present invention.

First, as shown in FIG. 1(A), Mylar.

A flat flexible transparent substrate 1 such as PUT is prepared, and a transparent conductor 1 (P-type) 2 made of ITO or the like is placed on the top surface, for example, with a thickness of 200A, as shown in FIG. 1(B). Deposit.

Then, as shown in FIG. 1(C), an additive-free n-swelled hydrogenated amorphous silicon (a-5i:H) layer 3 is formed on top of it.
is deposited to a thickness of, for example, 1 μm. Then, for example, a transition metal (All-5i, An-Si-Cu
, Mo, etc.) is deposited by sputtering, vapor deposition, etc., and a part of the electrode layer is removed by etching using photoresist etc. so that only a predetermined portion corresponding to the light receiving area remains. ), the electrode 4 is formed. Each of these elements 2.3 and 4 forms a part of the sensor that performs photoelectric conversion. Note that since a flat substrate is used and the most sensitive part of the sensor can be formed on it, the manufacturing process is easy and the characteristics are also good.

Then, as shown in Figure 1(E), 5i0
2. Deposit an interlayer insulating film 5 such as SiN, form a contact hole for forming a source electrode by photolithography and etching, deposit AJZ, etc. for the electrode by sputtering, vapor deposition, etc., and form it by photolithography and etching. Source electrode 6 connected to electrode 4
and a drain electrode 7 is formed.

Then, as shown in FIG. 1(F), an amorphous silicon (a-5t) layer 8 is deposited thereon, and a
An insulating film 9 made of i02, SiN, etc. is deposited, and Afl, etc. for the gate electrode is deposited on it by sputtering, vapor deposition, etc., and photolithography and etching are performed so that only the necessary portions remain to form the lower gate electrode lO2. form.

Then, as shown in Figure 1 (G), 5i0
2. An interlayer insulating film 11 such as SiN is deposited, a contact hole for forming an upper gate electrode is formed by photolithography and etching, and an AJ for the electrode is formed.
2 and the like is deposited by sputter deposition or the like to form an upper gate electrode 12 commonly connected to the lower gate electrode IO.

Next, as shown in FIG. 1, each color filter 14 is attached to the light receiving area on the lower surface of the transparent substrate 1.

A scanning circuit (transfer section) is formed by the source, drain, gate electrode, and gate insulating film.

These are so-called TFT (Tin Film Tran)
sister).

Note that the above components can be formed on the transparent substrate 1 by a low temperature process (350 or less). Therefore, without melting the flat and flexible transparent substrate 1 such as PET, a part of the sensor can be formed thereon, and a transfer section can be formed thereon. In addition, a large-area device can be obtained, and various shapes and structures can be obtained.

Since the element substrate obtained as described above is flexible, it can be bent into a cylindrical structure as shown in FIG. 2, for example. For example, it can be used in place of a photosensitive drum in a conventional copying machine. This allows the document to be read in one rotation, simplifying the mechanical structure. Further, it can also be applied to, for example, a drum type electrophotographic device.

FIGS. 3A to 3C show an example of the manufacturing process of another embodiment of the solid-state image sensing device of the present invention.

First, as shown in FIG. 3(A), a flat and flexible transparent substrate 31 is prepared, and as shown in FIG. 3(B), a transparent conductive film such as ITO (P Shape) 32, for example, in a gusset position of 200 people.

Then, as shown in FIG. 3C, an additive-free n-swelled hydrogenated amorphous silicon (a-5i:H) layer 33 is deposited thereon to a thickness of, for example, 1 .mu.m. In this way, a photoconductive layer is formed on the transparent substrate 31.

Then, for example, a transition metal (Ajl-5i, Aλ-
5T-Cu, Mo, etc.) is deposited by sputtering, vapor deposition, etc., and a part of the electrode layer is removed by etching using a photoresist or the like so that only a predetermined portion corresponding to the light-receiving area is left. As shown in Figure (D), an electrode 34 is formed.

Next, a photoresist is attached on top of the photoresist to form a resist pattern such that the resist remains only on the electrode 4, and as shown in FIG. 3(E), the patterned (opened) portion of the resist pattern is Directly below a-5i:) 1 layer 33
Remove by etching. In this way, the photoconductive layer
Each pixel is completely separated spatially by a groove 35.

Each of these elements 32, 33 and 34 forms a part of a sensor that performs photoelectric conversion. In addition, since a flat substrate is used and the most sensitive part of the sensor can be formed on it, the manufacturing process is easy and the characteristics are also good. In addition, the photoconductive layer is separated for each pixel. Therefore, the cross stroke in the plane direction is prevented, which effectively improves the characteristics.

Then, as shown in FIG. 3(F), 5i02
, an interlayer insulating film 36 such as SiN is deposited, and a contact hole for forming a source electrode is formed by photolithography and etching.

Next, as shown in FIG. 3(G), an electrode material such as A1 is deposited thereon by sputtering, vapor deposition, etc., and a source electrode 37 and a drain electrode 38 connected to the electrode 34 are formed by photolithography and etching. .

Then, as shown in FIG. 3(H), an amorphous silicon (a-5i) layer 39 is deposited thereon.
) As shown in FIG.
A lower gate electrode 41 is formed by depositing a layer such as No. 1 by sputter deposition or the like, and performing photolithography and etching so that only the necessary portion remains.

Then, as shown in Figure 3 (J), 5i02 is placed on top of it.
, an interlayer insulating film 42 such as SiN is deposited, a contact hole for forming an upper gate electrode is formed by photolithography and etching, a layer 1 for an electrode is deposited by sputtering, vapor deposition, etc., and a contact hole for forming an upper gate electrode is formed on the lower gate electrode 41. A commonly connected upper gate electrode 43 is formed.

Next, as shown in FIG. 3, each color filter 44 is attached to the light receiving area on the lower surface of the substrate 31.

Since the color filter is pasted onto the flat glass plate 1, its production is easy.

The element substrate thus obtained can also have a structure as shown in the second figure.

[Effects of the Invention] As explained above, according to the present invention, a photoconductive layer (part of a sensor) separated for each pixel is formed on a flat transparent substrate, and a scanning circuit is formed thereon. As a result, it is possible to obtain a stacked solid-state image sensing device with good characteristics through a simple process, and its uses are extremely wide, as it can be formed into a drum-like structure, for example.

[Brief explanation of drawings]

1(A) to (H) are cross-sectional views showing an example of the manufacturing process of an embodiment of the solid-state image sensor of the present invention; FIG. 2 is a perspective view showing an example of a specific structure of the embodiment of the present invention; 3 (8) to (K) are cross-sectional views showing an example of the manufacturing process of another embodiment of the solid-state image sensing device of the present invention. It is. (A)! Figure 1 21≦1 Procedural Amendment January 8, 1981] Michibe Uga, Director General of the Patent Office 1, Patent Application No. 1980-281458 2, Title of invention: Solid-state image sensor 3; Relationship with the case of the person making the amendment Patent applicant Fuji Photo Film Co., Ltd. 4, Agent address: 3F Maison Hirakawa, 2-5-2 Hirakawa-cho, Chiyoda-ku, Tokyo 102 Phone number (03) 239-5755 Date of amendment order From 6. In "3. Detailed Description of the Invention" of the specification to be amended, rTinJ in the third line of page 6 of the specification of contents of the amendment is corrected to rTh-1□.

Claims (1)

[Claims] 1) A flat and flexible transparent substrate, a sensor that performs photoelectric conversion formed on the substrate, and a transfer that transfers the charges formed in the sensor formed on the sensor. A solid-state image sensor characterized by comprising a circuit. 2) The solid-state imaging device according to claim 1, wherein the sensor is separated for each pixel.