JPS62117633A - Production of monolithic catalyst - Google Patents

Production of monolithic catalyst

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Publication number
JPS62117633A
JPS62117633A JP60256883A JP25688385A JPS62117633A JP S62117633 A JPS62117633 A JP S62117633A JP 60256883 A JP60256883 A JP 60256883A JP 25688385 A JP25688385 A JP 25688385A JP S62117633 A JPS62117633 A JP S62117633A
Authority
JP
Japan
Prior art keywords
catalyst
dipping
monolithic
exhaust gas
catalytic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60256883A
Other languages
Japanese (ja)
Inventor
Hiroshi Hirayama
平山 洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Priority to JP60256883A priority Critical patent/JPS62117633A/en
Publication of JPS62117633A publication Critical patent/JPS62117633A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain the titled catalyst having high activity even after long use by dipping a monolithic catalyst carrier into a soln. contg. the catalytic component from one end at a specified speed while placing the other end at the upper part at all times to deposit more catalytic component on the one end and then baking the material. CONSTITUTION:The monolithic catalyst carrier is obtained by coating alumina on a columnar monolith catalyst carrier base material of a honeycomb structure, etc., made of cordierite, etc. The monolitic carrier 4 is hung by a holder 3 and dipped in the liq. 6 contg. a catalytic component such as platinum in the axial direction. The dipping velocity can be made constant, increased or decreased or even dipping can be temporarily stopped. The material is dried after dipping and a catalyst having the concn. distribution of the catalytic component in the flowing direction of the exhaust gas can be obtained. The catalyst carries less catalytic substance on the upstream side of the exhaust gas where catalyst poisons such as Pb and P are easy to deposit and carries more catalytic substance on the downstream side. Consequently, the catalytic component purifies the exhaust gas effectively and the durability is also enhanced.

Description

【発明の詳細な説明】 [産業上の利用分野1 本発明は、杼時劣化を低減したモノリス触媒の製造方法
に関し、詳しく警よ排気ガスの流れ方向に触媒成分の濃
度分布を有する触媒の¥J造方法を与えるものである。
[Detailed Description of the Invention] [Industrial Application Field 1] The present invention relates to a method for producing a monolithic catalyst that reduces deterioration during shedding. This provides a J-building method.

本発明の方法によって製造したモノリス触媒は、耐久性
に優れ、長時間使用後においても高い触媒活性を何する
The monolithic catalyst produced by the method of the present invention has excellent durability and maintains high catalytic activity even after long-term use.

[従来の技術1 排気ガス浄化用触媒は、その現実の使用条件下において
、触媒汚物質(燃料中の鉛(Pb)、オイル中のリン(
P)等〉が排気ガス上流側により多く付着する。従って
、該上流側部分にJ5いて触媒活性は大ぎく低−ドし、
長時間使用後におIJる触媒性能の低下に著しいものが
ある。
[Prior art 1] Exhaust gas purification catalysts, under actual conditions of use, do not contain catalyst pollutants (lead (Pb) in fuel, phosphorus (in oil)).
P) etc.> are deposited more on the upstream side of the exhaust gas. Therefore, the catalytic activity of J5 in the upstream portion is extremely low.
In some cases, after long-term use, the catalyst performance deteriorates significantly.

かかる欠点に鑑み排気ガス上流側から排気ガス下流側へ
触媒成分を増加して1旦持させるモノリス触媒が、従来
提供されている(特開昭52−56091丹公報) また、このような触媒成分の淵■勾配を有するモノリス
触媒の製造方法としては、例えば、持間昭51−540
85号公報に示すようにモノリス担体の吸水mに等しい
一定量の触媒成分含有液を該担体の一端より含有する方
法がある。
In view of this drawback, a monolithic catalyst has been conventionally provided in which the catalyst component is increased from the upstream side of the exhaust gas to the downstream side of the exhaust gas and is temporarily retained (Japanese Patent Application Laid-Open No. 52-56091). As a method for producing a monolithic catalyst having a deep slope, for example,
As shown in Japanese Patent Application No. 85, there is a method in which a certain amount of catalyst component-containing liquid equal to the water absorption m of a monolithic carrier is introduced from one end of the carrier.

[R明が解決しようとりる問題点] しかし、上記した方法では、モノリス担体の吸水量は、
活性アルミナ等の担持層の厚み、該担持層の乾燥状態、
さらには空気中の湿度等によって人0く変動する。故に
、軸方向の触媒性能の低下度を補償する最適な濃度分布
を得るにtよ困難である。
[Problems that R Ming tries to solve] However, in the above method, the amount of water absorbed by the monolithic carrier is
The thickness of the supporting layer such as activated alumina, the drying state of the supporting layer,
Furthermore, it fluctuates depending on the humidity in the air, etc. Therefore, it is extremely difficult to obtain an optimal concentration distribution that compensates for the degree of decrease in catalyst performance in the axial direction.

本発明は、上記事情に鑑み案出されたものであり、モノ
リス触媒の性能低下を、その軸方向の低下度にマツチン
グした補償Jる最適な触媒成分の濃度分布を有するモノ
リス触媒の製造方法を提供するものである。
The present invention has been devised in view of the above circumstances, and provides a method for manufacturing a monolithic catalyst having an optimal concentration distribution of catalyst components, which compensates for the performance degradation of the monolithic catalyst by matching the degree of decline in the axial direction. This is what we provide.

[問題点を解決するための手段1 本発明は、触媒成分の担持方法に特徴を有するモノリス
触媒の製造方法である。
[Means for Solving the Problems 1] The present invention is a method for producing a monolithic catalyst characterized by a method of supporting catalyst components.

即ち本発明は、融媒担持層を形成したモノリス触媒11
体の一端を常に上に、他端を常に下に保持して、該他端
力口ら所定速III r触媒成分ah溶液へ浸漬して該
他端側により多く触媒成分を10持させ、その後焼成す
る事を特徴とする。
That is, the present invention provides a monolithic catalyst 11 on which a melting medium supporting layer is formed.
One end of the body is always held up and the other end is always held down, and the other end is immersed into the IIIr catalyst component ah solution at a predetermined rate so that the other end has more of the catalyst component, It is characterized in that it is then fired.

以下、構成要件を説明1Jる。The configuration requirements will be explained below.

モノリス触媒担体は、モノリス触媒基材に担持層を形成
したものである。
A monolith catalyst carrier is a monolith catalyst base material with a support layer formed thereon.

モノリス触媒基材は触媒の外形ζ規定し、その材質とし
ては、一般にコージェライトが用いられるが、その他ム
ライトあるいはスピネル又は、耐熱性金属を用いること
もできる。該基材(よ排気ガスの流れ方向に伸びる多数
の細孔(100−600個/平方インチ)をわするハニ
カム構造、又i、i三次元網目構造の一体成形構造であ
り、その外形は柱状(円柱、四角柱等モノリス触媒の設
置されるべき排気系の内形状に適合した形状)を成す。
The monolith catalyst base defines the external shape ζ of the catalyst, and its material is generally cordierite, but other materials such as mullite, spinel, or heat-resistant metals may also be used. The base material has a honeycomb structure with a large number of pores (100-600 pores/square inch) extending in the direction of exhaust gas flow, and an integrally molded structure with a three-dimensional network structure, and its outer shape is columnar. (A shape that matches the internal shape of the exhaust system in which the monolithic catalyst is to be installed, such as a cylinder or a square pillar).

触媒担持層は、前記Eノリス触媒基材表面に担持層成分
を含有するスラリー等の流動体をイNJ’−?JさUl
その後、乾燥し、焼成して形成する。
The catalyst support layer is formed by applying a fluid such as a slurry containing the support layer components to the surface of the E Norris catalyst base material. JsaUl
After that, it is dried and fired.

又、担持層成分としては、活性アルミナの他、酸化チタ
ン(TiOz)、酸化ジルコニウム(7roz)等公知
のものを用いる事ができる。
In addition to activated alumina, known components such as titanium oxide (TiOz) and zirconium oxide (7roz) can be used as supporting layer components.

本発明の特徴は、触媒成分の担持速度に対応して浸直速
度を調整する事にある。
A feature of the present invention is that the direct immersion speed is adjusted in accordance with the supporting speed of the catalyst component.

ここで触媒成分の担持速度は、溶液中の残留触媒成分濃
度により影響される。即ち触媒成分含有濃度が減少する
に伴い担持速度は低下する。尚、該担持速度は、溶液中
の触媒成分含有1dがら一義的に求めることができる。
Here, the supporting speed of the catalyst component is influenced by the concentration of the remaining catalyst component in the solution. That is, as the catalyst component concentration decreases, the loading rate decreases. Incidentally, the supporting speed can be determined uniquely from the catalyst component content 1d in the solution.

また、浸漬速度は、モノリス触媒担体の浸漬量[%] 
(一端を常に上に、一端を下にして軸方向に浸漬する潰
)増加分の時間に対する割合である。
In addition, the immersion speed is the immersion amount [%] of the monolithic catalyst carrier.
(Axial dipping with one end always up and one end down) Ratio of increment to time.

従って、浸漬時間が同一ならば担持速度が速いほど触媒
成分が担1.1層に付着する吊(担¥jm)は多い。一
方、担持速度が同一ならば浸漬速度が速く、同一部分で
の浸漬時間が短いほど、該同一部分での担持層は少ない
Therefore, if the immersion time is the same, the faster the supporting speed is, the more catalyst components will adhere to the support 1.1 layer. On the other hand, if the supporting speed is the same, the dipping speed is faster, and the shorter the dipping time in the same part, the less the supported layer is in the same part.

浸漬速度は一定速度でもよく、徐々に減少、又は増加さ
せいもにい。また、一時的にO(即ち停止状態)にして
もよい。
The soaking speed may be constant, gradually decreasing or increasing. Alternatively, it may be temporarily set to O (ie, stopped state).

又、担持させる触媒成分としては、従来知られている公
知の触媒成分である白金<Pt)、パラジウム(Pd)
、イリジウム(Irlルテニウム(Ru)、ロジウム(
Rh)、オスミューム(O5>等の貴金属あるいはクロ
ム(Cr>、ニッケル(N i > 、バナジ・クム(
V)、銅(Cu)等の!;Ii1合属等を用いることが
でさ′る。なお、前記浸漬に際し、前記担体の前記一端
は常に前記水溶液の液面から突出さVたまま行なっcら
良い。
In addition, as catalyst components to be supported, platinum < Pt, palladium (Pd), which are conventionally known catalyst components, are used.
, Iridium (Irl Ruthenium (Ru), Rhodium (
Rh), osmium (O5>, etc.) or chromium (Cr>, nickel (Ni>, vanaji cum)
V), copper (Cu), etc.! ;Ii1 combination etc. can be used. Incidentally, during the immersion, the one end of the carrier may be kept protruding from the surface of the aqueous solution at all times.

[実施例1 以下、本発明を具体的実施例に基づいて説明する。[Example 1 The present invention will be explained below based on specific examples.

(1)リンプルの製造 以下の手順によって実施例をサンプル1.2、および比
較例リンプルを製造した。なお、各サンプル製造にあた
っては、モノリス触媒基材(コージェライト製のハニカ
ム構造、φ93X100、セル密度400セル/平方イ
ンチ〉及びアルミナスラリー(活性アルミナ粉末とアル
ミツゾルと水とを混合し撹拌したしの)は1べ又共通の
ものを用いた。
(1) Production of Rimples Examples Sample 1.2 and Comparative Rimples were produced according to the following procedure. In addition, in producing each sample, we used a monolith catalyst base material (honeycomb structure made of cordierite, φ93 x 100, cell density 400 cells/square inch) and alumina slurry (mixed and stirred activated alumina powder, aluminum sol, and water). A common one was used.

(実施例サンプル1) 上記モノリス触II材をF記アルミナスラリー中に浸漬
し、引上げ乾燥し、焼成して触媒担持層を形成し、モノ
リス触媒担体をIllだ、なお、担持層の邑は100g
であった。
(Example Sample 1) The monolithic catalyst II material was immersed in the alumina slurry described in F, pulled up, dried, and fired to form a catalyst support layer.The monolithic catalyst support was 100g.
Met.

第1図は実施例す゛ンブルの製造の工程を示す説明図で
ある。
FIG. 1 is an explanatory diagram showing the process of manufacturing an example package.

図示Jるように、ナーボモータ1の回転軸上に、滑12
が固定され、滑車2に一端が係合するワイヤの他端にと
りつけられた保持具3によってモノリス担体4を吊り下
げている。ここにおいてモータ1の回転軸の回転に応じ
てモノリス担体4は、水槽5の触媒成分含有液6中に軸
方向aに浸漬する。
As shown in the figure, there is a slide 12 on the rotating shaft of the Nervo motor 1.
is fixed, and the monolith carrier 4 is suspended by a holder 3 attached to the other end of the wire, one end of which engages with the pulley 2. Here, as the rotation shaft of the motor 1 rotates, the monolith carrier 4 is immersed in the catalyst component-containing liquid 6 in the water tank 5 in the axial direction a.

今、前記モノリス触媒担体を保持具3に取付け、モータ
1を駆動して、水槽5内のジニトロジアンミン白金水溶
液[Pt (N+−13> 2 <NO2) 2 ]に
浸浸漬度を略一様にして20分で浸漬量を0%から10
0%とし、その後そのまま405)浸漬した。
Now, the monolithic catalyst carrier is attached to the holder 3, and the motor 1 is driven to make the immersion degree approximately uniform in the dinitrodiammine platinum aqueous solution [Pt (N+-13> 2 <NO2) 2 ] in the water tank 5. and reduce the immersion amount from 0% to 10% in 20 minutes.
0%, and then immersed as it was (405).

次に乾燥して同様の方法で塩化ロジウム水溶液(Rh 
CR3) kj、2iQ、乾燥シテ、担持m カP t
=i、oqz’文、[マh=o、1 に) 、、/文の
モノリス触媒八を(qだ。
Next, dry and use the same method to obtain a rhodium chloride aqueous solution (Rh).
CR3) kj, 2iQ, dry shite, support m KaP t
=i, oqz' sentence, [to mah=o, 1] ,,/monolith catalyst 8 of the sentence (q.

(実施例のサンプル2) 実施例(lンプル2は、実施例リンプル1と略同様であ
る。異なる点tよ担持層の吊が9E5qである事、及び
水溶液への浸漬を次の要領でbなった弔である。即ち、
ジニトロジアンミン白金水溶液に浸漬量10%で15秒
、浸「10%で30秒、浸漬ff130 % テ30 
秒、N ia ffi 40 % r 、45 秒、5
0%、60%、70%で各々1分、浸7PJ串80%で
2分間、浸漬量90%で3分間、1006もで50分、
8160分浸漬した。又、塩化1]ジウム水溶液にも同
様に浸iFt シて、(0持番がPt−1,09/J!
 、Rh−0,1g、/文のモノリス触媒Bを(qた。
(Sample 2 of Example) Example (1 Sample 2 is almost the same as Example Sample 1. The difference is that the suspension of the support layer is 9E5q, and the immersion in the aqueous solution is performed as follows. This is a memorial service for the deceased.
Dip in dinitrodiammine platinum aqueous solution at 10% for 15 seconds, then immerse at 10% for 30 seconds, immerse at ff130% Te30
seconds, N ia ffi 40% r, 45 seconds, 5
1 minute each at 0%, 60%, and 70%, 2 minutes at 80% soaking level, 3 minutes at 90% soaking amount, 50 minutes at 1006,
It was soaked for 8160 minutes. Also, immerse iFt in the aqueous solution of 1]dium chloride in the same way (0 serial number is Pt-1,09/J!
, Rh-0.1 g, /monolith catalyst B (q).

(比較例サンプル) 比較例サンプルは、触媒担持層の形成までは上記実施例
サンプルと同様であり、担持層の吊は100qであった
(Comparative Example Sample) The comparative example sample was the same as the above example sample up to the formation of the catalyst support layer, and the suspension of the support layer was 100q.

このモノリス触媒1体全体を同時にジニトロジアンミン
白金水溶液に60分浸漬し、乾燥させ、さらに同様に塩
化ロジウム溶液に浸漬して担持量がPt=1.Oq/l
 Rh=0.1Q/1のモノリス触媒Cを1;7た。
The entire monolithic catalyst was simultaneously immersed in a dinitrodiammine platinum aqueous solution for 60 minutes, dried, and then similarly immersed in a rhodium chloride solution until the supported amount was Pt=1. Oq/l
Monolithic catalyst C with Rh=0.1Q/1 was prepared at 1:7.

(2)サンプル製造の結果 第2図は実施例ナンプル1におLJる、第3図は実施例
サンプル2におけるプラチナのlfl持速度、浸漬速度
を示す。尚、ロジウムについても略同様の担持速度、浸
漬速度とした。
(2) Results of sample production Figure 2 shows the lfl retention rate and dipping rate of platinum in Example Sample 1, and Figure 3 shows the platinum holding rate and dipping rate in Example Sample 2. In addition, substantially the same loading speed and dipping speed were used for rhodium.

又、第4図、第5図は実施例り゛ンプル1.2及び比較
例サンプルの触媒成分の′a度分缶を示す。
Further, FIGS. 4 and 5 show the catalytic components of Sample 1.2 of Example 1.2 and Comparative Example.

即ち第4図は軸方向位置におけるプラアープの11持吊
を示し、第5図は軸方向位置におけるロジウムのIEI
 18 fitを示している。第4図、第5図に示すよ
うに、軸方向における触媒金属の担持量は、相持ia+
!itに対応した浸)h速度によって制御できる。
That is, Fig. 4 shows the 11 suspension of the plastic arp in the axial position, and Fig. 5 shows the IEI of rhodium in the axial position.
18 fit is shown. As shown in FIGS. 4 and 5, the amount of catalyst metal supported in the axial direction is proportional to ia+
! It can be controlled by the immersion rate corresponding to it.

ここにおいて浸漬速度を所定の値とすることは容易であ
る。したがって軸方向にd31.−)る前記担持層を所
望値に認定することも本発明によれば容易である。
Here, it is easy to set the dipping speed to a predetermined value. Therefore, in the axial direction d31. According to the present invention, it is also easy to specify the desired value of the carrier layer.

(3)計画 上記の様にして¥J)6した各トJンブルについて以下
の如くその性能評価を行なった。
(3) Plan The performance of each tumble made as described above was evaluated as follows.

先ず、各リーンプルを出ご属(pt、Rh)担持量の少
ない側を排気ガス流入側にして金属製容器(コンバータ
ー〉に保持し、車輌のエンジン排気系に装着して、市街
地走行を模擬したパターンで2001L’j間走行した
。次に各リンプルを1111気吊2゜8リツトルのLン
ジンに1!′着し、エンジンを20QQrplTT、−
3801111Il[1gの条件で運転した排気ガスを
触媒に導入し、炭化水素(HC)、−酸化炭素(CO)
 、窒素酸化物(NOx )の浄化率を測定した。結果
を第6図に示す。
First, each lean pull was held in a metal container (converter) with the side with the least amount of PT and Rh carried on the exhaust gas inflow side, and was attached to the engine exhaust system of a vehicle to simulate city driving. The pattern was run for 2001L'j.Next, each rimple reached 1!' on a 2°8 liter L engine with 1111 air suspension, and the engine was 20QQrplTT, -
3801111Il [1g of exhaust gas operated under the conditions is introduced into the catalyst to generate hydrocarbons (HC), -carbon oxides (CO)
, the purification rate of nitrogen oxides (NOx) was measured. The results are shown in Figure 6.

第6図よりわかるように実施例リンプル1.2、は比較
例サンプルよりも長時間使用後にJ3ける触媒活性が高
い。これは上記の如く所定速度で触媒成分を含何寸ろ水
溶液中にしノリス触媒担体を浸漬した結果、触媒成分の
担持量が該七ノリス触媒の上方に少なく、下方に多くな
ったため、毒物質のほとんど大部分が付着する排気ガス
流入側近傍での触媒物質が少なく毒物質のほとんど付着
しない下流側での触媒物質が多いので触媒成分が有効に
浄化機能を果すためであると考えられる。
As can be seen from FIG. 6, the catalytic activity of Example Rimple 1.2 was higher than that of the Comparative Example after being used for a long time. This is because, as a result of immersing the Norris catalyst carrier into an aqueous solution containing catalyst components at a predetermined rate as described above, the amount of catalyst components supported was small at the top of the Norris catalyst and increased at the bottom, resulting in the presence of toxic substances. This is thought to be because there is less catalytic material near the exhaust gas inlet side, where most of the poisonous substances adhere, and more catalytic material on the downstream side, where almost no toxic substances adhere, so that the catalytic components effectively perform the purifying function.

[効果1 本発明は、触媒成分の担持速度に対応して、モノリス触
媒の浸漬速度を変えるものである。即ち、担持速度が速
いほど同一の浸漬時間で触媒成分が担持層に付着する吊
(担持51)は多く、又、浸漬速度が速いはど担持層は
少ない。従って、担持速度に対応して浸漬速度を調整す
ることにより、モノリス触媒担体の軸方向の触媒成分の
担持層を変えることができるから、触媒成分の任意のく
最適な〉濃度分布を1qる事ができる。従って、バラツ
キの少ない、性能の安定したモノリス触媒が製造できる
。又、このJ−うにして得たモノリス触媒は、触媒成分
が触媒の排気ガスの流入側で少なく、流出側で多く担持
される。その結果、毒物質のほとんど大部分が付着する
排気ガス流入側近傍での触媒物質が少なく毒物質が多い
ので、従って耐久性が良く触媒活性も^い。又、従来と
同等の性能のモノリス触媒を15?たい場合には、本発
明の方法を適用覆る事により少量の触媒成分で足りる。
[Effect 1] The present invention changes the dipping speed of the monolithic catalyst in accordance with the supporting speed of the catalyst component. That is, the faster the supporting speed is, the more supports (supports 51) the catalyst component adheres to the support layer in the same immersion time, and the faster the immersion speed is, the fewer the supported layers are. Therefore, by adjusting the dipping speed in accordance with the supporting speed, it is possible to change the supported layer of the catalyst component in the axial direction of the monolithic catalyst carrier. I can do it. Therefore, a monolithic catalyst with stable performance and less variation can be produced. Furthermore, in the monolithic catalyst obtained by the J-process, less catalyst components are supported on the exhaust gas inflow side of the catalyst, and more on the outflow side of the catalyst. As a result, there is less catalytic material near the exhaust gas inflow side, where most of the poisonous substances adhere, and there are more poisonous substances, resulting in good durability and catalytic activity. Also, 15? a monolith catalyst with the same performance as the conventional one? If desired, by applying the method of the present invention, a small amount of the catalyst component is sufficient.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、実施例リンプルの製造工程を承り説明図であ
る。第2図は実施例サンプル1における、プラチナの担
持速度、浸漬速度を示す。第3図(ま、実施例サンプル
2における、プラチナの担持速度、浸漬速度を示す。第
4図は実施例サンプル1.2及び比較例サンプルの軸方
向位置にオGjるプラチナの担持mを示す。第5図は実
施例サンプル1.2及び比較例サンプルの軸方向位置に
お【Jるロジウムの担持mを示す。第6図は、実施例)
1ンブル1.2及び比較例サンプルの浄化率(%)を示
す。 特許出願人   トヨタ自動車株式会社代理人    
弁理士 大川 宏 同     弁理士 丸山明人 浸;jI吟開(禁) 第4図
FIG. 1 is an explanatory diagram of the manufacturing process of the example rimple. FIG. 2 shows the loading speed and dipping speed of platinum in Example Sample 1. Figure 3 shows the platinum loading speed and dipping speed in Example Sample 2. Figure 4 shows the platinum loading m in the axial position of Example Sample 1.2 and Comparative Example Sample. Figure 5 shows the loading of rhodium in the axial position of Example Sample 1.2 and Comparative Example Sample.
1 shows the purification rate (%) of Sample 1.2 and Comparative Example sample. Patent applicant: Toyota Motor Corporation Agent
Patent attorney Hirotoshi Okawa Patent attorney Akihito Maruyama;

Claims (4)

【特許請求の範囲】[Claims] (1)触媒担持層を形成したモノリス触媒担体の一端を
常に上に、他端を常に下に保持して、該他端から所定速
度で触媒成分含有溶液へ浸漬して該他端側により多く触
媒成分を担持させ、その後焼成する事を特徴とするモノ
リス触媒の製造方法。
(1) One end of the monolithic catalyst carrier on which the catalyst support layer has been formed is always held at the top and the other end is always held at the bottom, and the monolithic catalyst carrier is immersed from the other end into the catalyst component-containing solution at a predetermined speed so that the amount of water is increased on the other end. A method for producing a monolithic catalyst, characterized by supporting a catalyst component and then calcining it.
(2)前記所定速度は、前記触媒成分含有溶液中の残留
触媒成分濃度に応じて決定する特許請求の範囲第1項記
載のモノリス触媒の製造方法。
(2) The method for producing a monolithic catalyst according to claim 1, wherein the predetermined speed is determined depending on the concentration of the residual catalyst component in the catalyst component-containing solution.
(3)前記所定速度は、少なくとも1回の停止状態を含
む特許請求の範囲第1項記載のモノリス触媒の製造方法
(3) The method for manufacturing a monolith catalyst according to claim 1, wherein the predetermined speed includes at least one stop state.
(4)前記所定速度は、浸漬初期において大きく、後期
において小さくする特許請求の範囲第1項記載のモノリ
ス触媒の製造方法。
(4) The method for producing a monolith catalyst according to claim 1, wherein the predetermined speed is large in the early stage of immersion and small in the latter stage.
JP60256883A 1985-11-15 1985-11-15 Production of monolithic catalyst Pending JPS62117633A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60256883A JPS62117633A (en) 1985-11-15 1985-11-15 Production of monolithic catalyst

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60256883A JPS62117633A (en) 1985-11-15 1985-11-15 Production of monolithic catalyst

Publications (1)

Publication Number Publication Date
JPS62117633A true JPS62117633A (en) 1987-05-29

Family

ID=17298734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60256883A Pending JPS62117633A (en) 1985-11-15 1985-11-15 Production of monolithic catalyst

Country Status (1)

Country Link
JP (1) JPS62117633A (en)

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US6026020A (en) * 1992-03-17 2000-02-15 Hitachi, Ltd. Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
US6414878B2 (en) 1992-03-17 2002-07-02 Hitachi, Ltd. Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
EP1229219A2 (en) * 2001-02-02 2002-08-07 Volkswagen AG Device for purifying the exhaust gas from a combustion engine and manufacturing process
JP2003519567A (en) * 2000-01-12 2003-06-24 オンデオ サービス Method for immobilizing a catalyst on a support
US7057937B1 (en) 1992-03-17 2006-06-06 Renesas Technology Corp. Data processing apparatus having a flash memory built-in which is rewritable by use of external device

Cited By (19)

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Publication number Priority date Publication date Assignee Title
US6493271B2 (en) 1992-03-17 2002-12-10 Hitachi, Ltd. Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
US7965563B2 (en) 1992-03-17 2011-06-21 Renesas Technology Corp. Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
US6026020A (en) * 1992-03-17 2000-02-15 Hitachi, Ltd. Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
US6181598B1 (en) 1992-03-17 2001-01-30 Hitachi, Ltd. Data line disturbance free memory block divided flash memory and microcomputer having flash memory
US6335879B1 (en) 1992-03-17 2002-01-01 Hitachi, Ltd. Method of erasing and programming a flash memory in a single-chip microcomputer having a processing unit and memory
US6400609B1 (en) 1992-03-17 2002-06-04 Hitachi, Ltd. Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
US6414878B2 (en) 1992-03-17 2002-07-02 Hitachi, Ltd. Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
US7505329B2 (en) 1992-03-17 2009-03-17 Renesas Technology Corp. Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
US6166953A (en) * 1992-03-17 2000-12-26 Hitachi, Ltd. Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
US6130836A (en) * 1992-03-17 2000-10-10 Hitachi, Ltd. Semiconductor IC device having a control register for designating memory blocks for erasure
US6690603B2 (en) 1992-03-17 2004-02-10 Hitachi, Ltd. Microcomputer including a flash memory that is two-way programmable
US7295476B2 (en) 1992-03-17 2007-11-13 Renesas Technology Corp. Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
US6804152B2 (en) 1992-03-17 2004-10-12 Renesas Technology Corp. Method for manufacturing a printed board on which a semiconductor device having two modes is mounted
US6999350B2 (en) 1992-03-17 2006-02-14 Renesas Technology Corp. Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
US7057937B1 (en) 1992-03-17 2006-06-06 Renesas Technology Corp. Data processing apparatus having a flash memory built-in which is rewritable by use of external device
US7184321B2 (en) 1992-03-17 2007-02-27 Hitachi Ulsi Systems Co., Ltd. Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
JP2003519567A (en) * 2000-01-12 2003-06-24 オンデオ サービス Method for immobilizing a catalyst on a support
EP1229219A2 (en) * 2001-02-02 2002-08-07 Volkswagen AG Device for purifying the exhaust gas from a combustion engine and manufacturing process
EP1229219A3 (en) * 2001-02-02 2003-05-14 Volkswagen AG Device for purifying the exhaust gas from a combustion engine and manufacturing process

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