JPS62117328A - Plasma device - Google Patents

Abstract

PURPOSE:To simplify a carrying means and a load locking chamber, and to miniaturize a device by fitting a sample into a housing chamber formed onto the surface of a body of revolution and selectively making the sample face to a load locking chamber and a sample chamber by the rotation of the body of revolution. CONSTITUTION:The inside of an etching chamber 3 is irradiated by plasma from a plasma leading-out port 1d in a plasma producing chamber 1 for a plasma device, the chamber 3 is formed to a rectangular parallelopiped shape, and a housing 6 as a carrying means and a body of revolution 7 are disposed to the outer surface of a side wall oppositely faced to the leading-out port 1d. A spherical void 6a is shaped at the central section of the housing 6, and an opening section 6b faced to the chamber 3 and an opening section 6c constituting a load locking chamber opened at the center of the reverse side oppositely faced to the opening section 6b are formed at the centers of side surfaces and an opening section 6d at the center on the intermediate side between the opening sections 6b, 6c. A sample 8 is fitted to a housing chamber formed to the surface of the body of revolution 7, and the sample 8a is faced to each chamber 3 or the load locking chamber by the rotation of the body of revolution 7, thus simplifying the carrying means and the load locking chamber.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention is directed to CVD (Chemistry) for manufacturing semiconductor devices.
The present invention relates to a plasma device used as a calvapor deposition device, an etching device, a sputtering device, etc.

[iL coming technology]

Plasma devices that utilize electron microtron resonance can generate highly active plasma at low gas pressure, allow a wide range of ion energy selections, and provide large ion currents to improve the directionality, uniformity, and uniformity of the ion flow. Due to its advantages such as superior performance, research and development are progressing as it is indispensable for the production of highly integrated lower conductor devices.

FIG. 2 is a cross-sectional view of a conventional plasma apparatus configured as a plasma etching apparatus 2 and utilizing electron cyclotron resonance, and numeral 31 indicates a plasma generation chamber. The plasma generation chamber 31 has a two-city structure on the surrounding wall and is equipped with a cooling water circulation chamber 31a, and a microwave inlet 3]c sealed with a quartz glass plate 31b is located in the center of one side wall, and a microwave inlet 3]c sealed with a quartz glass plate 31b is located in the center of the other side wall. The plasma extraction port 3+ has an extraction electrode disposed at a position facing the fibrous wave introduction port 31c.
d, one end of the waveguide 32 is connected to the microwave inlet 31c, and a plasma extraction port D3 is connected to the microwave inlet 31c.
] d, and an excitation coil 34 is arranged concentrically surrounding the plasma bottom chamber 31 and one end of the waveguide 32 connected thereto. It is arranged.

The other end of the waveguide 32 is connected to the magnetron M, and also has a plasma outlet 31d leading to the etching chamber 33.
A load-lock chamber 35 is provided on the outer surface of one side wall not facing the casing 36a, and a casing 36a is provided on the outer surface of the other side wall, which constitutes a moving means 36 for a mounting table 38 for a sample 37 such as a semiconductor wafer.
are installed facing each other. casing 36n
Inside, there is a mounting table 38 at the tip. A guide member 36d that holds the rod 36c fitted with the plug 36b so that it can rotate and move in the axial direction between its axes, and drive units 36e and 3Of that rotate and move the rod 36c in the axial direction are arranged. It is set up. When the mounting table 38 is placed in the etching chamber 33, the plug 36b connects the communication hole 33b between the casing 3 (in) and the etching chamber 33, and the mounting table 38.
When placed in the row 1'I dock chamber 35, the connection between the partition wall between the load lock chamber 35 and the etching chamber 33
Rod 36 to make hole 338 airtight ↑・I, +, respectively.
It is fixed at c.

However, in such a plasma etching device,
As shown by the broken line in the drawing, the rod 36c is advanced to position the mounting table 38 in the load lock chamber 35 and the stopper 3
At 6h, the communication hole 33a is sealed, gas is introduced into the load lock chamber 35 through a supply/exhaust pipe (not shown), the pressure inside the load lock chamber 35 is raised to atmospheric pressure, and then the lid 35a is opened as shown by the broken line. After replacing the sample 37 on the mounting table 38, closing the load lock chamber 35 again and evacuation to a predetermined degree of vacuum through the supply/exhaust pipe, move the rod 36c so that the mounting table 38 is positioned in front of the plasma extraction port 31d. At that position, the rod 36c is rotated 90' to make the sample 37 face the plasma outlet 31d. In this state, plasma is formed in the plasma generation chamber 31, and the generated plasma is etched by a diverging magnetic field formed by the excitation coil 34, whose magnetic flux density decreases as it moves toward the etching chamber 33 in front of the plasma outlet 31d. The surface of the sample 37 is etched by projecting it onto the sample 37 in the chamber 33 (Japanese Unexamined Patent Publication No. 60-5+537).

[Problem that the invention seeks to solve]

By the way, in the conventional device as described above, the load-lock chamber 35 is automatically opened and closed by the stopper 36h that is linked to the mounting table 38, but the communication hole 33.1 is sealed by the stopper 36b. Because it relies on the O-ring placed around the plug 36h, it is necessary to apply pressure to the O-ring itself in order to increase the sealing strength. It is extremely difficult to apply a pressing force to the rod 3711 on the sliding surface, and the durability against use is low.Furthermore, it is necessary to separately provide a stopper for the rod 3711, so the number of parts is reduced. Furthermore, because the volume of the load lock chamber 35 is large, the sample 37
There were problems such as poor work efficiency as it took time to supply and discharge gas, especially vacuuming, when replacing the gas.

[Means for solving problems]

The present invention has been made in view of the above circumstances, and its purpose is to configure a 1ull transport means with a housing and a rotary body rotating within the housing, and a sample storage chamber formed on the circumferential surface of the rotary body. By selectively rotating the load-lock chamber and sample chamber, not only can a reliable sealing function be obtained for the load-lock chamber and sample chamber, but the load-lock chamber can also be configured extremely compactly, significantly reducing equipment costs. It is an object of the present invention to provide a plasma device which can reduce the amount of gas, particularly the time required for evacuation, and which can greatly improve the efficiency of gas supply and discharge to and from a load lock chamber during sample exchange, etc.

The plasma apparatus according to the present invention includes a sample chamber for projecting plasma onto a sample, a load-lock chamber equipped with a sample exchange port for exchanging the sample between the outside, and a load-lock chamber for transferring the sample to the sample chamber. 11 to move between rooms! In the plasma apparatus, the transport means includes a housing and a rotating body that rotates in an airtight state within the housing, the rotating body has a sample storage chamber around it, and the sample storage chamber is connected to the loading chamber. It is characterized in that it can be rotated to selectively face the lock chamber and the sample chamber.

〔Example〕

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment in which the present invention is applied to an etching apparatus will be explained in detail based on drawings. FIG. 1 is a cross-sectional view of a plasma device according to the present invention (hereinafter referred to as 1.degree. device of the present invention), in which 1 is a plasma membrane, 2 is a waveguide, and 3 is a sample H for etching. The etching chamber is a sample chamber, and numeral 4 indicates an excitation field.

Plasma generation chamber IG9] is made of stainless steel, the surrounding wall is constructed in a double structure, and is equipped with a 1llll flow chamber 1a for cooling water, and a stone/k glass root 111 is installed in the center of the side wall.゛(N +1 microphone 11 wave introduction [11(・woya1
Eh, also, an extraction electrode is installed in the center of the other side wall between this and the body 1, and the extraction port 1d of the Burasma is opened. And it's wet. The end of the four-wave tube 2 is fitted into the microwave introduction hole 1c +i1. −． In the etching chamber 3, face the drawer r'lld,
is disposed, and an excitation m1-(ru 4) is provided around the end of the plasma generation chamber 1 and the waveguide 2 connected thereto.

The other end of the waveguide 2 is connected to the magnet 1-1-1 M, so that the microwaves emitted by the magnet 1-1 M are introduced into the plasma generation chamber 1 through the waveguide 2. It has become. In addition, the excitation coil is connected to a constant current power supply, and the current flow Q causes plasma to be generated by introducing microwaves into the plasma generation chamber 1.
In addition, a diverging magnetic field is formed in which the magnetic flux density decreases toward the etching chamber 3 side in order to project the plasma toward the y-notching chamber 3 side. le.

1r is the cooling water supply system, drainage system, and IP, , 3
F, indicates gas 1 (L2 indicates yarn feeding).

On the other hand, the enoching chamber 3 is formed in the shape of a hollow 1n parallelepiped, and a housing 6 and a rotating body 7 constituting one stage of conveyance are disposed on the outer surface of the side wall facing the plasma drawer 11d.

The housing 6 has a cubic shape, with a spherical cavity 6 in the center.
The etching chamber 3 is equipped with
Therefore, in the opening 11 part i) which opens, there is an opening 1-1 part 6c which opens into the middle east on the opposite side opposite to this, and between these openings 11 parts fih and 6c. They each have an air supply/exhaust opening 6d that opens approximately in the middle of the inner space 6a, and a spherical rotating body 7 is disposed in close contact with the inner space 6a.

The rotating body 7 is disposed so as to be pivotally supported by a shaft 7a whose center is jm, and one checkpoint on its circumferential surface is circularly recessed to form the openings (ih, 6c, 6++a:
If selectively facing accommodation chambers 7h are provided, and this accommodation chamber 71
A sample 8 such as a semiconductor substrate can be electrostatically attracted into the T. In order to reduce the volume of the entire opening 11 6C, the storage chamber 7h is desirably formed as narrow and shallow as possible within a range that does not hinder the storage of the sample).

The cylindrical portion 3c extending from the etching chamber 3 is fitted into the opening L1 portion 6h of the Hi-riding 6, and the opening L1 portion 6C
A lid 6e is provided on the outer surface of the housing, and an opening 6
A supply trachea 6'' is connected to d.

1, Oa, and 10b are O-rings fitted around the cavity 6a of the housing [j so as to surround the respective openings 6b and 6c, and the rotating body 7 rotates in an airtight state within the cavity 6a. It looks like this.

Thus, in the apparatus of the present invention configured as described above.

Now, when the storage chamber 7h provided in the rotating body 7 is opened and faced to the 11 section 6C, the storage chamber 7h is opened at the opening 6 (which is a low 1' lock).
.

Since it forms part of l・t tl-, crystal fi
Open the lid 6e and pass the opening 6c (-7) into the storage chamber 7b with the 1' conductor 7! 7. Rotate 1 turn 90 degrees in the direction of the arrow corner.As a result, the storage chamber 7b reaches a position facing the open L1 portion 6d, and the gas is sucked through the trachea [if, and the predetermined degree of vacuum is set. Then, it is further rotated 90 degrees L2 to a position facing the opening 6h, that is, a position facing the plasma drawer 1-111d of the etching chamber 3, and stopped at 1t.

Even if the rotating body 7 is rotated within the housing 6, the opening 11 i
0 ring placed around 3b and 6c] Oa,
], even if Oh supplies and discharges air from the supply/exhaust pipe 6r, the airtight state is not impaired.

In this state, the plasma 1 is formed in the chamber 1 through the gas supply system 1g.
When gas is supplied inside and current is passed through the excitation coil 4,
, J(, one wave of 'ζ microphone 1' is introduced through the waveguide 2 to generate plasma in the plasma generation chamber l, 3■:Sa-0,
1) A beam is projected onto the sample 8 in the etching chamber 3 with a diverging magnetic field toward the etching chamber 3 where the excitation coil 4Q is generated, and etching is performed. cormorant. When the etching is completed, the rotary body 7 is rotated around the axis 7a [ijl, so that it faces the opening 6d midway, and gas is supplied into the storage chamber 7b through the intake and exhaust pipe, and the pressure in the storage chamber 7b is raised to atmospheric pressure f11. After that, place it to face the opening 11 part 6C. Open the lid 6e, take out the sample 8, attach a new sample 8, and repeat the above-described process again.

In addition, although the above-mentioned Example demonstrated the structure in which the rotating body 7 was a sphere, for example, a cylindrical body or other rotating bodies may be used. Further, although the case where only one storage chamber 711 for the sample 8 is formed is shown, two storage chambers 711 of 211M or more may be formed. For example, when forming the storage chamber 7h 211M, it is formed on the circumferential surface on the opposite side to the rotation center of the rotating body 7, and one storage chamber 71
It is desirable that while the + is facing the etching chamber 3, the other storage chamber 71) is facing the opening 6C, which is the -'-drying chamber, for sample exchange, etc.

Although the above-mentioned embodiment has been described with reference to the configuration as a plasma etching apparatus, the present invention is not limited to this, and it goes without saying that the apparatus may be configured as an etching apparatus, a spackling apparatus, or the like.

〔effect〕

As described above, in the apparatus of the present invention, a sample is mounted in a storage chamber formed on the surface of a rotating body, and by rotation of the rotating body,
The load-lock chamber and sample chamber can be selectively accessed, and the transport means and load-lock chamber can be significantly simplified and compacted, which not only reduces equipment costs by 1, but also makes the load-lock chamber smaller. The present invention has excellent effects such as shortening the time required for air supply and exhaust, reducing running costs, and improving work efficiency.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional view of the device of the present invention, and FIG. 2 is a cross-sectional view of the conventional device. 1... Plasma generation chamber 2... Waveguide 3... Etching chamber 4... Excitation coil 6... Housing
6a... Blank space 6b, 6c, 6d... Opening 7.
...Rotating body 7h...Containment chamber 8...Sample

Claims (1)

[Claims] 1. A sample chamber for projecting plasma onto the sample, a load-lock chamber equipped with a sample exchange port for exchanging samples with the outside, and a transport means for moving the sample between the sample chamber and the load-lock chamber. In the plasma apparatus, the transport means includes a housing and a rotating body that rotates in an airtight state within the housing, the rotating body has a sample storage chamber around it, and the storage chamber is connected to the load lock chamber. 1. A plasma device characterized in that the plasma device is configured to be rotated so as to selectively face the sample chamber and the sample chamber.