JPS62115731A - Semiconductor manufacturing equipment - Google Patents

Semiconductor manufacturing equipment

Info

Publication number
JPS62115731A
JPS62115731A JP60144682A JP14468285A JPS62115731A JP S62115731 A JPS62115731 A JP S62115731A JP 60144682 A JP60144682 A JP 60144682A JP 14468285 A JP14468285 A JP 14468285A JP S62115731 A JPS62115731 A JP S62115731A
Authority
JP
Japan
Prior art keywords
wire
semiconductor manufacturing
pad
pressing member
tip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60144682A
Other languages
Japanese (ja)
Inventor
Toshio Hattori
敏雄 服部
Tasuku Shimizu
翼 清水
Asao Nishimura
西村　朝雄
Shoji Sakata
坂田　荘司
Toshio Hatsuda
初田　俊雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60144682A priority Critical patent/JPS62115731A/en
Publication of JPS62115731A publication Critical patent/JPS62115731A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PURPOSE:To improve corrosion resistance by coating respective bonding section partially while also mixing an Al corrosion inhibitor being at issue on insulating performance, such as CaCO3, SiO2, etc. on wire bonding. CONSTITUTION:A thermocompression bonding method is a system in which the tip of an Au wire 4 is heated at a high temperature, and formed to a ball shape, and the ball section 5 is pushed against an Al pad 3 and joined by a capillary 9, but pipes 10 for ejecting flexible adhesives are fixed to the side surface of the capillary 9, and the flexible adhesives 8 are ejected to the periphery of a joining section during a time when the Au wire ball section 5 is pushed. Consequently, only the Al pad being at issue on corrosion and the wire joining section can be coated with the flexible adhesives, thus acquiring the effects of temperature resistance and corrosion resistance without generating the trouble of resin cracks and wire disconnections. An Al corrosion inhibitor, such as CaCO3, SiO2, etc. can also be mixed, thus further improving corrosion resistance.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明はワイヤボンディング部を有する半導体装置の製
造装置に係り、−特にレジンパッケージングされる半導
体装直に好適な製造装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a manufacturing apparatus for a semiconductor device having a wire bonding portion, and more particularly to a manufacturing apparatus suitable for directly manufacturing semiconductor devices to be resin packaged.

〔発明の背景〕[Background of the invention]

従来の半導体Ａｌ腐食対策としては、特開昭５５−１１
３３５０号に記載のように半導体チップ上面全体に軟質
樹脂でコーティングする方式が提案されており、この方
式はチップコートと称され、しばしば使われてきた。こ
の方式を第３図で説明するが、チップ１の下面はタブ２
に接合されており、上面にはＡｌパッド３があり、この
上面部５でＡｕワイヤ４と接合されている。このＡｌパ
ッド３とＡｕワイヤ４との接合部５は水分の侵入によっ
て腐食しやすく、この対策としてこの接合部５を含むチ
ップ上面部てを軟質樹脂６でコートし、その後これら全
体をモールドレジン７で封止する方法がとられてきた。As a conventional semiconductor Al corrosion countermeasure, Japanese Patent Application Laid-Open No. 55-11
As described in No. 3350, a method of coating the entire upper surface of a semiconductor chip with a soft resin has been proposed, and this method is called a chip coat and has been frequently used. This method will be explained with reference to FIG. 3, where the bottom surface of the chip 1 has a tab 2
There is an Al pad 3 on the top surface, and the top surface portion 5 is bonded to an Au wire 4. The joint 5 between the Al pad 3 and the Au wire 4 is easily corroded by the intrusion of moisture, and as a countermeasure against this, the upper surface of the chip, including the joint 5, is coated with a soft resin 6, and then the whole is coated with a mold resin 7. A method of sealing has been used.

しかし、この方法ではレジン７が硬化収縮及び熱収縮す
る際、チップ１及びタブ２接合体の上面と下面ではレジ
ンとの接着状況が異なるため、成形後、チップ１とタブ
２の接合体はそり、そのためＡｕワイヤ４のチップコー
ト６とモールドレジン７との境界部８でＡｕワイヤ４が
断線したり、モールドレジン７のチップ１及びタブ２と
の境界部でき裂が発生するなどの故障の原因ともなって
いた。However, with this method, when the resin 7 hardens and shrinks and heat shrinks, the adhesion to the resin differs between the top and bottom surfaces of the chip 1 and tab 2 assembly, so after molding, the chip 1 and tab 2 assembly warps. This causes failures such as the Au wire 4 breaking at the boundary 8 between the chip coat 6 and the mold resin 7, or cracking at the boundary between the mold resin 7 and the chip 1 and the tab 2. It was also accompanied by

〔発明の目的〕 本発明は腐食の発生しない半導体を得るための半導体製
造装置を提供することを目的とする。[Object of the Invention] An object of the present invention is to provide a semiconductor manufacturing apparatus for obtaining a semiconductor in which corrosion does not occur.

〔発明の概要〕[Summary of the invention]

従来のチップコートはチップ上面全面をコートする方式
であり、作業的には容易であるが、上面と下面の接着条
件の違いにより変形にアンバランスが生じ、故障の原因
ともなった。本発明の方法は各ワイヤボンディング部各
々局部的にコートするということで工程的に複雑となる
が、これをワイヤボンディング時に行なうということで
解決している。又、この局部コーティングの実施により
、絶縁性能上問題のある対Ａｆｌ腐食防食剤ＣａＣ○、
。Conventional chip coating is a method of coating the entire top surface of the chip, which is easy to work with, but the difference in bonding conditions between the top and bottom surfaces causes unbalanced deformation, which can lead to failures. The method of the present invention requires a local coating of each wire bonding portion, which makes the process complicated, but this is solved by performing this at the time of wire bonding. In addition, by implementing this local coating, the anti-Afl corrosion inhibitor CaC○, which has problems in insulation performance, can be removed.
.

Ｓ　ｉ　Ｏ，なども混入してさらに耐食性を向上させる
ことが可能である。It is possible to further improve the corrosion resistance by mixing SiO, etc.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を第１図により説明する。この
例は、熱圧着ボンディングに採用したもので、熱圧着ボ
ンディング法はＡｕワイヤ４の先端を高温にし、ボール
状にしたのち、キャピラリー９によってこのボール部５
をＡｌｌパッド３に押し付は接合する方式であるが１本
実施例における装置ではこのキャピラリー９の側面に軟
質接着剤噴出用パイプ１０を固定し、Ａｕクワイヤボー
ル５を押し付けている間に軟質接着剤８を接合部周囲に
噴出するようにしてあり、特に接着剤コーティング用の
工程は不必要である。An embodiment of the present invention will be described below with reference to FIG. This example was adopted for thermocompression bonding. In the thermocompression bonding method, the tip of the Au wire 4 is heated to a high temperature and formed into a ball shape, and then the capillary 9 is connected to the ball portion 5.
In the apparatus of this embodiment, a soft adhesive spouting pipe 10 is fixed to the side surface of the capillary 9, and while the Au choir ball 5 is being pressed, the soft adhesive is pressed onto the All pad 3. Since the adhesive 8 is sprayed around the joint, no special adhesive coating step is required.

第２図は、超音波ボンディング法に適用した実施例で、
超音波ボンディング法は、／１１ワイヤ１１をＡｌｌパ
ッド３にウェッジ１２により押しつけ、さらにウェッジ
１２に横方向の超音波振動を与え、Ａｌワイヤ１１とＡ
ｌｌパッド３を接合する方法であるが、本実施例におけ
る装置では、このウェッジ１２の側面に軟質接着剤噴出
用パイプ１０を固定し、超音波加振中に軟質接着剤８を
接合部周囲に噴出するようにしてあり、上記実施例と同
じく接着剤コーティング用の工程は不必要である０本発
明によれば、腐食で問題となるへ〇パッドとワイヤ接合
部のみを軟質接着剤でコートでき、従来のチップコート
のようなレジンクラック、ワイヤ断線の故障を起こすこ
となく耐湿、耐食効果を得ることができる。またさらに
この局部コーティングの実施例により絶縁性能上問題の
ある対Ａｆｉ腐食防食剤Ｃａ　ＣＯ３＊　Ｓ　ｉＯ２な
どをも混入でき、より一層耐食性を向上させることがで
きる。Figure 2 shows an example applied to the ultrasonic bonding method.
In the ultrasonic bonding method, the /11 wire 11 is pressed against the All pad 3 by a wedge 12, and the wedge 12 is subjected to ultrasonic vibration in the lateral direction, thereby bonding the Al wire 11 and the
ll pad 3, in the apparatus of this embodiment, a soft adhesive jetting pipe 10 is fixed to the side surface of this wedge 12, and the soft adhesive 8 is applied around the joint part during ultrasonic vibration. According to the present invention, only the pad and wire joints can be coated with a soft adhesive, which is a problem due to corrosion. It is possible to obtain moisture resistance and corrosion resistance without causing failures such as resin cracks and wire breakage that occur with conventional chip coatings. Furthermore, this embodiment of local coating allows the inclusion of anti-Afi corrosion inhibitors such as Ca CO3 * SiO2, which have problems in terms of insulation performance, thereby further improving corrosion resistance.

〔発明の効果〕〔Effect of the invention〕

本発明は上記の如く、ＡｔＪワイヤあるいはＡｕワイヤ
先端ボール部をパット上に押し付ける押付部材と、該押
付部材の側面に前記ＡｕワイヤあるいはＡｕワイヤ先端
ボール部を押し付けている間にＡｕワイヤあるいはＡｕ
ワイヤ先端ボール部側面とパッドを接着する接着剤を噴
出するように固定した軟質接着剤を噴出するように固定
した軟質接着剤噴出用パイプとを設けたので、Ａｌパッ
ドとＡｕワイヤ接合部が局部的に接合でき、半導体の腐
食の発生しない半導体製造装置を得ることができる。As described above, the present invention includes a pressing member that presses an AtJ wire or an Au wire tip ball portion onto a pad, and a pressing member that presses the Au wire or Au wire tip ball portion onto a side surface of the pressing member, and
Since a soft adhesive spouting pipe fixed to spout a soft adhesive fixed to spout the adhesive bonding the pad to the side surface of the wire tip ball part is provided, the Al pad and the Au wire bonding part is not localized. Therefore, it is possible to obtain a semiconductor manufacturing device that can be joined in a consistent manner and that does not cause corrosion of the semiconductor.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の熱圧着ボンディングへの適用例の局部
コーティング状況の接合部詳細図、第２図は本発明の超
音波ボンディングへの適用例の局部コーティング状況の
接合部詳細斜視図参弁参。 第３図は従来のチップコート形半導体装置の断面図であ
る。 １・・・チップ、２・・・タブ、３・・・ＡＩ２パッド
、４・・。 Ａｕワイヤ、５・・・ワイヤ先端ボール部、６・・・チ
ップコート、７・・・レジン、８・・・軟質接着剤、９
・・・キャピラリー、１０・・・軟質接着剤噴出管、１
１・・・Ａｌワイヤ、１２・・・ウェッジ。Fig. 1 is a detailed view of the joint in a local coating state in an application example of the present invention to thermocompression bonding, and Fig. 2 is a detailed perspective view of the joint part in a local coating state in an application example of the present invention to ultrasonic bonding. three. FIG. 3 is a sectional view of a conventional chip coat type semiconductor device. 1...chip, 2...tab, 3...AI2 pad, 4... Au wire, 5... Wire tip ball portion, 6... Chip coat, 7... Resin, 8... Soft adhesive, 9
... Capillary, 10 ... Soft adhesive ejection tube, 1
1...Al wire, 12...Wedge.

Claims (1)

【特許請求の範囲】 １、支持基板上に半導体チップを定着し、この半導体チ
ップ上にボンディングパットを介してＡｕワイヤを接着
固定する半導体製造装置において、前記Ａｕワイヤある
いはＡｕワイヤ先端ボール部をパット上に押し付ける押
付部材と、該押付部材の側面に前記Ａｕワイヤあるいは
Ａｕワイヤ先端ボール部を押し付けている間にＡｕワイ
ヤあるいはＡｕワイヤ先端ボール部側面とパットを接着
する接着剤を噴出するように固定した軟質接着剤噴出用
パイプとを設けたことを特徴とする半導体製造装置。 ２、押付部材が、Ａｕワイヤの両側からＡｕワイヤ先端
ボール部を押し付けるキャピラリーである特許請求の範
囲第１項記載の半導体製造装置。 ３、押付部材が、超音波振動を受けるウェッジである特
許請求の範囲第１項記載の半導体製造装置。 ４、軟質接着剤噴出用パイプが、Ａｕワイヤ先端ボール
部とパットとの隅部に向けて傾斜して取付られている特
許請求の範囲第１項記載の半導体製造装置。 ５、軟質接着剤噴出用パイプが、押付部材の両側に複数
列設けられている特許請求の範囲第１項記載の半導体製
造装置。 ６、接着剤が、ＣａＣＯ＿３、ＳｉＯ＿２などの耐Ａｌ
腐食剤を混入した軟質接着剤である特許請求の範囲第１
項記載の半導体製造装置。[Claims] 1. In a semiconductor manufacturing apparatus in which a semiconductor chip is fixed on a support substrate and an Au wire is adhesively fixed onto the semiconductor chip via a bonding pad, the Au wire or the ball portion at the tip of the Au wire is attached to the pad. A pressing member to be pressed upward, and fixed so that while pressing the Au wire or the ball portion at the tip of the Au wire to the side surface of the pressing member, an adhesive to bond the pad to the side surface of the Au wire or the ball portion at the tip of the Au wire is ejected. A semiconductor manufacturing device characterized by being provided with a pipe for ejecting a soft adhesive. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the pressing member is a capillary that presses the end ball part of the Au wire from both sides of the Au wire. 3. The semiconductor manufacturing apparatus according to claim 1, wherein the pressing member is a wedge that receives ultrasonic vibrations. 4. The semiconductor manufacturing apparatus according to claim 1, wherein the soft adhesive jetting pipe is attached to be inclined toward the corner of the Au wire tip ball portion and the pad. 5. The semiconductor manufacturing apparatus according to claim 1, wherein a plurality of rows of soft adhesive jetting pipes are provided on both sides of the pressing member. 6. The adhesive is Al-resistant such as CaCO_3 and SiO_2.
Claim 1, which is a soft adhesive mixed with a corrosive agent
Semiconductor manufacturing equipment as described in .
JP60144682A 1985-07-03 1985-07-03 Semiconductor manufacturing equipment Pending JPS62115731A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60144682A JPS62115731A (en) 1985-07-03 1985-07-03 Semiconductor manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60144682A JPS62115731A (en) 1985-07-03 1985-07-03 Semiconductor manufacturing equipment

Publications (1)

Publication Number Publication Date
JPS62115731A true JPS62115731A (en) 1987-05-27

Family

ID=15367802

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60144682A Pending JPS62115731A (en) 1985-07-03 1985-07-03 Semiconductor manufacturing equipment

Country Status (1)

Country Link
JP (1) JPS62115731A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5950100A (en) * 1995-05-31 1999-09-07 Nec Corporation Method of manufacturing semiconductor device and apparatus for the same
US7534320B2 (en) * 2005-11-15 2009-05-19 Northrop Grumman Corporation Lamination press pad

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5950100A (en) * 1995-05-31 1999-09-07 Nec Corporation Method of manufacturing semiconductor device and apparatus for the same
US7534320B2 (en) * 2005-11-15 2009-05-19 Northrop Grumman Corporation Lamination press pad

Similar Documents

Publication Publication Date Title
US7051915B2 (en) Capillary for wire bonding and method of wire bonding using it
JP2697411B2 (en) TAB inner lead joining method
JP2973792B2 (en) Resin-sealed semiconductor device
JPS62115731A (en) Semiconductor manufacturing equipment
JP2753696B2 (en) Automatic bonding structure of semiconductor package tape
JPH1187404A (en) Flip chip and its mounting method
JPS5810841A (en) Resin sealing type semiconductor device
JPS5827352A (en) Semiconductor device
JPH08236578A (en) Flip chip mounting method of semiconductor element and bonding agent used for this method
JPH1064940A (en) Capillary for wire bonding device
US6541306B2 (en) Resin-sealed semiconductor device and method of manufacturing the device
JPH0629334A (en) Mounting method for semiconductor device
US5757069A (en) Semiconductor lead frame and packaging method
JPH08111493A (en) Semiconductor device
JPH10125724A (en) Bonding of flip chip
JPH03280452A (en) Structure for mounting semiconductor device
JPH0430546A (en) Method of ultrasonic bonding of coated wire, and outer lead for the bonding
KR20060017213A (en) A junction method of a chip bump and a substrate pad using underfill resin and supersonic
JP2003282629A (en) Ultrasonic flip chip mounting method
JPH11219972A (en) Wire bonding capillary
JPH08204048A (en) Sealing structure of semiconductor chip
JPS6356946A (en) Semiconductor element
JPS5921168B2 (en) Manufacturing method for semiconductor integrated circuits
JP2762875B2 (en) TAB inner lead joining method
JPH1140704A (en) Semiconductor device