JPS62115462A - Electrophotographic sensitive body - Google Patents

Abstract

PURPOSE:To improve the photoconductive characteristics (electrophotographic characteristics) and environmental resistance of an electrophotographic sensitive body by using N-type amorphous silicon hydride as at least part of the sensitive body. CONSTITUTION:A barrier layer 22, a charge transferring layer 23 and a charge generating layer 31 are formed on an electrically conductive support 21. The barrier layer 22 is made of a-Si contg. H. The charge transferring layer 23 is made of a-SiH contg. at least one among C, O and N. The 1st layer 24 of the charge generating layer 31 is made of N-type a-Si and has 1-10mum thickness. The 2nd layer 25 is made of muC-SiH or a-SiH and has 0.1-5mum thickness. The charge transferring layer 23 and the charge generating layer 31 contain at least one kind of element selected among the group III and V elements in the periodic table.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electrophotographic photoreceptor having excellent charging characteristics, photosensitivity characteristics, environmental resistance, and the like.

[Prior art and its problems] Conventionally, as materials for forming the photoconductive layer of an electrophotographic photoreceptor, inorganic materials such as CdS, zno, 'se, 5e-Te, or amorphous silicon, or poly-N-vinylcarbazole ( PVCZ) or trinitrofluorene (
Organic materials such as TNF are used. However, these conventional photoconductive materials have various problems in terms of photoconductive properties and manufacturing, and it is necessary to use these materials depending on the purpose of use, sacrificing some of the characteristics of the photoreceptor system. There is.

For example, Se and CdS are materials that are harmful to the human body, and special consideration must be given to safety measures when manufacturing them. Therefore, there are problems in that the manufacturing equipment becomes complicated and the manufacturing cost is high, and in particular, Se needs to be recovered, which adds to the recovery cost. Also,
In the Se or 5e-Te system, the crystallization temperature is 65°C
Therefore, during repeated copying, problems with the photoconductive properties arise due to residual snow, etc., and therefore, the service life is short and practicality is low.

Furthermore, ZnO is susceptible to oxidation-reduction and is significantly affected by the environmental atmosphere, resulting in a problem of low reliability in use.

Furthermore, organic photoconductive materials such as PVCz and TNF are suspected of being carcinogenic and pose health problems for the human body, and organic materials have poor thermal stability and abrasion resistance. The disadvantage is that it is low and has a short lifespan.

On the other hand, amorphous silicon (hereinafter abbreviated as a-31)
has recently attracted attention as a photoconductive conversion material, and
It is actively being applied to T-cells, TaIII transistors, and image sensors. As part of this application of a-3i, attempts have been made to use a-8i as a photoconductive material for electrophotographic photoreceptors, and photoreceptors using a-8i are collected because they are non-polluting materials. It has advantages such as no need for treatment, higher spectral sensitivity in the visible light region than other materials, high surface hardness, and excellent wear resistance and impact resistance.

This a-8i is being studied as a photoreceptor based on the Carlson method, but in this case, the photoreceptor characteristics are required to be high resistance and photosensitivity. Since it is difficult to satisfy the requirements with a photoreceptor, a layered structure is created in which a barrier layer is provided between the photoconductive layer and the conductive support, and a surface charge retention layer is provided on the photoconductive layer 11. It satisfies these demands.

By the way, a-8i is usually formed by a glow discharge decomposition method using silane gas, but at this time, a-8i is
Hydrogen is incorporated into the 3i film, and the electrical and optical characteristics vary greatly due to the difference in the amount of hydrogen. That is, as m of hydrogen that enters the a-3i film increases, the optical bandgap increases and the resistance of a-3i increases, but as a result, the photosensitivity to long wavelength light decreases. For example, it is difficult to use it in a laser beam printer equipped with a semiconductor laser. In addition, if the hydrogen content in the a-8i film is high, depending on the film formation conditions, (Si
H2) Those having bonding structures such as n and 5i82 may occupy most of the area in the film. In this case, voids increase and silicon dangling bonds increase, resulting in deterioration of photoconductive properties and rendering the material unusable as an electrophotographic photoreceptor. Conversely, reducing the amount of hydrogen penetrating into a-8i reduces the optical band gap and its resistance, but increases photosensitivity to long wavelength light.

However, when the hydrogen content is low, there is less hydrogen to combine with and reduce silicon dangling bonds. For this reason, the mobility of the generated carriers is reduced, the life span is shortened, and the photoconductive properties are deteriorated, making it difficult to use as an electrophotographic photoreceptor.

As a technique to increase the sensitivity to long wavelength light, there is a method of mixing silane-based gas and germane GeH4 and performing glow discharge decomposition to produce a film with a narrow optical bandgap. and GeH+
Since the optimum substrate temperature is different between the two methods, the produced film has many structural defects and cannot obtain good photoconductive properties.

Further, waste gas treatment of GeH4 is complicated because it becomes a toxic gas when oxidized. Therefore, such technology is not practical.

This invention was made in view of the above circumstances, and has excellent charging ability, low residual potential, high sensitivity over a wide wavelength range up to the near infrared region, and good adhesion to the substrate. An object of the present invention is to provide an electrophotographic photoreceptor having good environmental resistance.

[Means for Solving the Problems] The electrophotographic photoreceptor according to the present invention includes a conductive support and a 14'! In the electrophotographic photoreceptor, the barrier layer is made of hydrogen-containing amorphous silicon. The charge transport layer is made of amorphous hydrogenated silicon containing at least one element selected from carbon, oxygen, and nitrogen, and the charge generation layer has a layer thickness of 1 to 10 μm. 11i1 formed of n-type amorphous hydrogenated silicon and a layer thickness of 0.
．． It is characterized in that it is a laminate with a second layer formed of amorphous hydrogenated silicon or microcrystalline hydrogenated silicon with a thickness of 1 to 5 μm.

The present invention was achieved by the inventors of the present invention, who have conducted various experimental studies in order to overcome the drawbacks of the prior art described above and to develop an electrophotographic photoreceptor that has both excellent photoconductive properties (electrophotographic properties) and environmental resistance. As a result, the inventors came up with the idea that this objective could be achieved by using n-type amorphous silicon hydride (hereinafter referred to as a-8iH) for at least a portion of the electrophotographic photoreceptor, and completed the present invention. It is something.

This invention will be explained in detail below. The feature of this invention is that n-type a-8i H is used instead of the conventional a-3i. That is, at least a part of the electrophotographic photoreceptor is formed of n-type a-8iH, or is made of n-type a-8iH and an intrinsic semiconductor (i-type) a-8i
, amorphous hydrogenated silicon (hereinafter abbreviated as a-8iH), microcrystalline silicon (hereinafter referred to as μc-3)
(abbreviated as i), microcrystalline hydrogenated silicon (hereinafter abbreviated as μC-8iH), and LtC,o, full
a-8i containing at least one element selected from
It is made of a laminate with. Further, in an electrophotographic photoreceptor having a photoconductive layer, n-type a-8i is used for the photoconductive layer.

The charge generation layer generates carriers upon irradiation with light. Part or all of the 11th layer of this charge generation layer is made of n-type a-s r H < hydrogen-containing n-type a-3i), and its thickness is 1 to 10 μm. Further, the second layer is formed of a-8iH or μc-s + H<a-3i or μc-8i containing hydrogen H,
The layer thickness is 0. It is 1 to 5 μm. The charge transport layer is a layer that allows carriers generated in the charge generation layer to reach the support side with high efficiency, and therefore, the carriers must have a long life, high mobility, and high transportability.

The charge transport layer is formed of a-8iH containing a small amount of one element selected from C, O, and N.
, O, and N are preferably 0.1 to 20 at%, more preferably 1 to 10 at%.

If the charge transport layer is too thin or too thick, it will not perform its function satisfactorily. Therefore, the thickness of the charge transport layer is preferably 3 to 80 μm, more preferably 5 to 50 μm.

A barrier layer is disposed between the conductive support and the charge transport layer. This barrier layer suppresses the flow of charge between the conductive support and the photoconductive layer, thereby improving the charge retention function on the surface of the photoreceptor and increasing the charging ability of the photoreceptor. In the Carlson method, when the surface of the photoreceptor is positively charged, the barrier layer is made p-type in order to prevent electrons from being injected from the support side to the charge transport layer. on the other hand,
When the surface of the photoreceptor is negatively charged, the barrier layer is made n-type in order to prevent holes from being injected from the support side into the charge transport layer. The barrier layer is a-8i (
a-8iH).

The n-type a-3i is formed by doping a-3i with an element belonging to Group Ⅰ of the periodic table, such as nitrogen IN, phosphorus P, arsenic AS, antimony sb, and bismuth Bi. This n-type a-8i may be either lightly doped with these doping elements or heavily doped n" type, but it can be used in various ways when used as an electrophotographic photoreceptor. Considering the photoconductive properties, these doping elements should be
It is preferable to use n-type a-8i containing 3 atomic %.

μC-8i is a-
3i and polycrystalline silicon (polycrystalline silicon)
clearly distinguished from That is, in X-ray diffraction measurement, since a-8i is amorphous, only a halo appears;
Although no diffraction pattern can be observed, μc-8i shows a crystal diffraction pattern in which 2θ is around 27 to 28.5°. Also, the dark resistance of polycrystalline silicon is 1060 C shield, whereas μc-8i is 1Q11
It has a dark resistance of Ω·cm or more. This μC-3i is formed by an aggregation of microcrystals having a particle size of about several tens of Angus l-loams or more.

As in this invention, an n-type a-
By using 8i@, long wavelength light, especially 79
It is possible to obtain an electrophotographic photoreceptor that is highly sensitive even to semiconductor laser light having an oscillation wavelength near 0 nm. Therefore, the electrophotographic photoreceptor according to the present invention can be applied not only to RPC (plain paper copying machines) but also to laser printers equipped with semiconductor lasers. In Figure 1, the horizontal axis shows the P doping ratio expressed as the PH3/S 12Hs gas flow rate ratio, and the vertical axis shows the conductivity of n-type a-5i (1/Ω・0
FIG. 3 is a graph showing the influence of doping ratio on conductivity. When the flow rate ratio PH3/S i H6 of PH3 gas in this film-forming gas increases, the n-type a-8i
The content m of the P element in the material increases, making it a strong n-type (n+). As shown in Figure 1, when P is not included, the dark conductivity σD is 3.87x10-11 (1/Ω・cI
m), and the conductivity cy p (790 nm) when irradiated with a 790 nm laser beam is 1.15 x 10-'
(1/Ω·ram). However, increasing the doping ratio increases the conductivity and PH3/S 12Hs
When the doping ratio is 33 ppm, (7p (79
0n1m> is 5.57x10-8 (1/Ω・cIM)
This is an increase of more than one order of magnitude compared to the case without P doping. In addition, in this case, σD is also 5.28x10
-9 (1/Ω・cIR), and as the doping ratio increases, both σp (790nll> and σD) increase, but eventually the doping ratio increases from 1 o-s to 1
In the range 0-8, (7p (790n111)
The value is one order of magnitude higher than that without P doping, and the S/N ratio can be increased to about three orders of magnitude. Therefore,
By using n-type a-3i doped with P or the like at this level of doping ratio for the first layer of the charge generation layer,
A photoreceptor with sufficiently high sensitivity to long wavelength light can be obtained, and can be fully put to practical use as a photoreceptor for laser printers.

Next, by making a-3i n-type in this way,
The reason why sensitivity to long wavelength light can be reduced will be explained. In Figure 2, PH3/S i Hs is plotted on the horizontal axis.
FIG. 3 is a graph showing the relationship between the doping ratio and the optical band gap and activation energy on the vertical axis. As is clear from FIG. 2, the optical bandgap does not change even if the doping ratio is changed and remains substantially constant. On the other hand, the activation energy ΔE becomes smaller as the doping ratio is increased. In this case, the optical bandgap Ea is the energy difference between the valence band and the conduction band, and the activation energy ΔF is the energy difference between the Fermi levels F, L and the conduction band. The optical band gap Eo is the energy required to excite electrons from the valence band to the conduction band, and the smaller the optical band gap Eo is, the lower energy light can be absorbed to generate carriers.

On the other hand, the Fermi level FL exists between the conduction band and the valence band, and the smaller the activation energy, the more easily carriers are excited. Therefore, the smaller the activation energy, the h
ν (blank constant x frequency) is high for small long wavelength light! ! ! carriers are excited. By using n-type a-8i in the charge generation layer as in this invention, the sensitivity to long wavelength light increases as shown in FIG.

A-3 by doping with elements that belong to group Ⅰ of the periodic table
By making i an n-type, the Fermi level FL increases, and as a result, the activation energy ΔE decreases,
This is thought to be due to increased sensitivity to light with low energy (long wavelength light).

On the other hand, when n-type a-8iH is used for the charge generation layer, the dark specific resistance of the charge generation layer becomes low and the charge retention ability becomes low.

To compensate for this, a hydrogen-containing μc-3i or a-8i is used for the second layer of the VIR generation layer, and the charge generation layer is combined with this second layer by an n-type a-8i H It has a laminate structure with the first layer formed of. As a result, n-type a-3
i The low dark specific resistance of the first layer is compensated by the second layer (high resistance), and a highly practical photoreceptor can be obtained.

Note that the optical energy gap Ea of μc-8i is a
−3i optical energy gap Ea (1,65 to 1
．． 708V).

Therefore, μc-8i can absorb even near-infrared light, which has a longer wavelength and lower energy than visible light, and has high photosensitivity on the long wavelength side. Also, μc-8i is a-
Carrier mobility is higher than that of 8i.

An electrophotographic photoreceptor equipped with such a charge generation layer having n-type a-8iH is produced using silane gas as a raw material and mainly uses phosphine gas (PH3 gas) as a dopant gas using a high-frequency glow discharge decomposition method. It can be manufactured by depositing n-type a-8i)-1 on a conductive support. In this case, the raw material gas S
The hydrogen-containing layer in the layer can be controlled by diluting high-order silane gas such as iH+ and 5i2Hs with hydrogen or by mixing hydrogen gas with a silane-based gas.

Furthermore, by using a diluent gas, it is possible to increase the deposition rate and form uniform plasma.

FIG. 3 is a diagram showing an apparatus for manufacturing an electrophotographic photoreceptor according to the present invention. Gas cylinders 1 and 2 degrees and 3.4 degrees are, for example, SfH+ and 5i2Hs, respectively.

Raw material gases such as B2 H6, H2, and CH4 are accommodated. The gas in these gas cylinders 1.2.3.4 flows! It is supplied to a mixer 8 via an adjustment valve 6 and piping 7. Each cylinder is equipped with a pressure gauge 5, and by monitoring the pressure gauge 5 and adjusting the valve 6, the flow rate and mixing ratio of each raw material gas supplied to the mixer 8 can be adjusted. can. The gases mixed in the mixer 8 are supplied to a reaction vessel 9. Reaction container 9
A rotary shaft 10 is attached to the bottom 11 of the rotary shaft 10 so as to be rotatable around the vertical direction, and a disk-shaped support 12 is fixed to the upper end of the rotary shaft 10 with its surface perpendicular to the rotary shaft 10. has been done. Inside the reaction vessel 9, a cylindrical electrode 13 is placed at the bottom 11 with its axial center aligned with the axial center of the rotating shaft 10.
is installed on top. A drum base 14 of a photoreceptor is placed on a support base 12 with its axial center aligned with the axial center of the rotating shaft 10, and a heater 15 for heating the drum base is arranged inside the drum base 14. It is set up. Electrode 13
A high frequency layer 11116 is connected between the electrode 13 and the drum base 14, so that a high frequency current is supplied between the electrode 13 and the drum base 14. The rotating shaft 10 is rotationally driven by a motor 18. The pressure inside the reaction vessel 9 is
Monitored by a pressure gauge 17, the reaction vessel 9 is connected via a gate valve 18 to a suitable evacuation means such as a vacuum pump.

When manufacturing a photoreceptor using an apparatus configured as described above, after installing the drum base 14 in the reaction vessel 9, the gate valve 19 is opened to allow the inside of the reaction vessel 9 to be heated by approximately 0.11-
Evacuate to below a pressure of Torr. Next, the required reaction gases from the cylinders 1, 2, 3.4 are mixed at a predetermined mixing ratio and introduced into the reaction vessel 9. In this case, the gas flow rate introduced into the reaction vessel 9 is such that the pressure inside the reaction vessel 9 is 0.
Set it so that it is 1 to 1 Torr. Next, motor 1
8 to rotate the drum base 14, and
The drum base 14 is heated to a constant temperature, and a high frequency current is supplied between the N rod 13 and the drum base 14 by the high frequency layer [16] to form a glow discharge between them. As a result, a-8i is deposited on the drum base 14. Note that N20. NH3, NO2, N2
.

These elements can be contained in a-8i by containing CH4, C2H4,02 gas, etc.

As described above, the electrophotographic photoreceptor according to the present invention can be manufactured using a closed system manufacturing apparatus, similar to that using the conventional a-3i, and is thus safe for the human body. Further, since this electrophotographic photoreceptor has excellent heat resistance, moisture resistance, and abrasion resistance, it has the advantage of having a long life with little deterioration even after repeated use over a long period of time. Furthermore, since a long wavelength sensitizing gas such as GeH4 is not required, there is no need to provide waste gas treatment equipment, and industrial productivity is extremely high.

The n-type a-8i, a-8i or μc-8i contains 0.1 to 30 atomic % of hydrogen. As a result, the dark resistance and bright resistance become harmonious, and the photoconductive properties are improved. n-type a-3i, a-8t or μc-8i
For example, when doping hydrogen into the layer by a glow discharge decomposition method, a silane-based raw material gas such as SiH4 and 5i2Hs and a carrier gas such as hydrogen are introduced into a reaction vessel and glow discharge is performed. , S i F4 and 5i
A mixed gas of silicon halide such as CI+ and hydrogen gas may be used, or a mixed gas of silane-based gas and silicon halide may be used for reaction. Furthermore, the n-type a-8iH layer and the like can be formed not by the glow discharge decomposition method but also by a physical method such as sputtering.

n-type a-8i t-1, a-8i H or μc-8i
Preferably, H is doped with at least one element selected from nitrogen (N), carbon (C), and oxygen (0). Thereby, the dark resistance of n-type A-81 etc. can be increased and the photoconductive properties can be improved. In particular, it is preferable to include these components in the charge transport layer in order to improve the charging ability and charge retention ability of the photoreceptor. These C, O, and N may be uniformly distributed in the charge transport layer, or may be distributed such that their concentration changes in the layer thickness direction in all or part of the charge transport layer. In this case, the concentrations of C, O, and N are preferably changed so as to increase from the charge generation layer toward the conductive support. In this way, by changing the i degree of the doping element in the layer thickness direction, it is possible to prevent layer separation at the boundaries of each layer. In addition, by incorporating C, O, and N into μc-3i, μc-3i
The band gap of c-8i is widened, and the movement of carriers from the conductive support to the charge generation layer is suppressed. Since the region where movement is suppressed in this way is preferably near the conductive support, C, O.

It is preferable to have a concentration distribution such that the degree of N is higher on the conductive support side.

μc-8iH and a-3: H to D-type Nisurutame,
It is preferable to dope elements belonging to Group Ⅰ of the periodic table, such as boron B, aluminum AI, gallium Ga, indium)n, thallium T1, etc.
In order to make -3i and a-8i n-type, elements belonging to Group V of the periodic table, such as nitrogen N, phosphorus P, arsenic A
It is preferable to dope with s, 7-inch sb, bismuth B, and the like. By doping with this n-type impurity or n-type impurity, a barrier layer that prevents charge injection from the support into the charge transport layer can be formed.

μc-8iH and a-8iH themselves are slightly n-type theal, but μc-3i)-1 or a-8iH1 is lightly doped (10-7 to 10-
3 at.

In this invention, the second layer of the charge generation layer is a-8iH
Or it is formed of μc-3i1-1.

Since μc-8iH has a small optical bandgap and high sensitivity to long wavelength light, the charge generation layer is
By forming it with H, it is possible to absorb from visible light to long wavelength light with higher efficiency.

Moreover, since μc-3i1-1 has few structural defects, carrier mobility is high and running properties are good. Therefore, carriers move with high efficiency in this charge generation layer.

Preferably, a surface layer is provided on the charge generation layer. Since the charge generation layer a-3i or μc-8i has a relatively large refractive index of 3 to 4, light reflection easily occurs on the surface. When such light reflection occurs, the proportion of light 1 absorbed by the charge generation layer decreases, increasing optical loss. For this reason, it is preferable to provide a surface layer to prevent reflection. Also, by providing the surface layer, the charge generation layer is protected from damage. Furthermore, by forming the surface layer, the charging ability is improved, and the charge can be easily deposited on the surface. Materials forming the surface layer include Si3N<, 5i02, S
iC, Al2O3, a-8iN:)-1,, a-8iO
:Hl and a-8iC:)-1, and organic materials such as polyvinyl chloride and polyamide.

Embodiment FIGS. 4 to 6 are partial sectional views showing an electrophotographic photoreceptor according to an embodiment of the present invention. In the photoreceptor shown in FIG. 4, a barrier layer 22 is formed on a conductive support 21. As shown in FIG. A charge transport layer 23 is formed on the barrier layer 22, and a charge generation layer 3 is formed on the charge transport layer 23.
1 is formed. The charge generation layer 31 is composed of a laminate including a first layer 24 formed on the conductive support 21 side and a second layer 25 formed on the surface side. In the photoreceptor shown in FIG. 5, a charge generation layer 132 formed on the five charge transport layers 23 has a second layer 25 formed on the conductive support 21 side and a first layer 24 formed on the surface side. has. 6th
In the photoreceptor shown in the figure, a surface layer 26 is formed on the charge generation layer 31.

The charge transport layer 23 is formed of a-8iH containing C1○ and N, and has a layer thickness of 3 to 80 μm. This charge transport layer 23 can be made i-type by containing an element belonging to Group 1 of the periodic table. Further, since it contains C, O, and N, the charge transport layer 23 has high resistance.

The first layer 24 of the charge generator 1131 is formed of n-type a-3i, and its layer thickness is 1 to IC1m. The second layer 25 is made of μc-8t H or a-8iH. It is preferable that this second layer 25 is lightly doped with an element belonging to Group 1 of the periodic table to make the second layer type 1 to reduce dark resistance and improve photoconductive properties. The thickness of this second layer 25 is 0.1 to 5 μm.

Next, embodiments of the invention will be described.

The inside of the Tomo192 reaction vessel was evacuated using a diffusion pump (not shown),
Create a vacuum of approximately 0.1 torr. Thereafter, the drum base is heated and maintained at about 400°C. Then 200SCCM
SiH+ gas with a flow rate of , 82 H6 gas with a flow rate ratio of 10-3 to this Si2H6 gas flow rate, and 11005
CC Cl-14 gas was mixed and supplied to the reaction vessel.

Thereafter, the inside of the reaction vessel was evacuated using a mechanical booster pump and a rotary pump, and the pressure was adjusted to 1 Torr. A high frequency power of 300 watts at 13.56 MHz was applied to the electrode to generate plasma between the electrode and the drum base, and the film was formed for 15 minutes to form an a-3i barrier layer of 1.8 μm on the support 21. did.

Next, 600 SCCM of SiH+ gas, 1105 CC of CH4 gas, and 208 CCM of N2 gas were introduced, and a film was formed for 3 cycles under the conditions of a reaction pressure of 0.8 Torr and high frequency power of 1 kW, and N-containing a-8iHI was transported. A layer of 26 μm was formed.

The bond, 11005CC of 5izes gas, and 5i2
PH3 gas was introduced into the reaction vessel at a flow a ratio of 5×10-'' to Hs gas.The reaction pressure was adjusted to 0.4 Torr and the high frequency power was adjusted to 100 Watts, and the film was formed for 1 hour.
A first layer of a charge generation layer, which is a type a-8iH layer, was formed to have a thickness of 8 μm. Next, the SiH4 gas flow rate was set to 300SCCM,
82 H6 gas R11fThe flow rate ratio to SiH4 gas was set to 3X10-8, the reaction pressure was 0.8 torr, and the high frequency power was 200 watts.
8-3i)-1 No. 211 was formed. Then 5i)
-1+gas 1m 300SCCM, CH4 gas flowing water 1m
The film was formed for 15 minutes under the conditions of 508 CCM, reaction pressure of 1 torr, and high frequency power of 200 watts to form a surface layer 25 of 1 μm. - The photoreceptor thus formed was attached to a laser printer equipped with a semiconductor laser having a wavelength of 790 nm, and its electrostatic properties were measured.
c! 12 and 358r! The residual potential at the exposure amount of J Cl112 is 20V, and it has extremely excellent sensitivity.

Implementation TfA2 This example is a-8i containing ○ as a charge transport layer.
Form H and close the second @ of the charge generation layer, μc-8i
This example differs from Example 1 in that H is formed.

That is, in forming the charge transport layer, 1108 CC of 02 gas was added instead of the N2 gas in Example 1.

This results in an a-8iH charge transport layer containing 0
μm was formed. Further, in forming the second layer of the charge generation layer, 5008 CCM of N2 gas was added in addition to SiH4 gas and 82Ha gas. As a result, μc-8iH
A second layer was formed to a thickness of 3 μm.

The photoreceptor thus formed was attached to a laser printer equipped with a semiconductor laser having a wavelength of 790 nm, and its electrostatic properties were measured. As a result, the half-exposure layer was 9.0 e.
rQ C112, and has extremely excellent sensitivity with a residual potential of 40 V at an exposure dose of 35 erg c12.

[Effects of the Invention] According to the present invention, the electronic material has high resistance, poor charging characteristics, high photosensitivity in the visible light and near-infrared light regions, is easy to manufacture, and has high practicality. A photographic photoreceptor can be obtained.

[Brief explanation of drawings]

FIG. 1 is a graph showing the relationship between doping ratio and electrical conductivity, FIG. 2 is a graph showing the relationship between doping ratio, activation energy, and optical band gap, and FIG. 3 is an electrophotograph according to the present invention. 4 to 6 are cross-sectional views showing an electrophotographic photoreceptor according to an embodiment of the present invention. 1.2.3.4: Cylinder, 5: Pressure gauge, 6; Valve, 7
; Piping, 8; Mixer, 9: Reaction container, 10: Rotating shaft, 1
3; Electrode, 14 Nidram base, 15; Heater, 16: a
% frequency power supply, 19; goo 1 to bulb, 21; support, 2
2; Barrier layer, 23: Charge transport layer, 24; First layer, 25;
2nd Wj, 26; surface layer, 31.32; charge generation layer. Applicant's agent Patent attorney Takehiko Suzue PH3/5izHs Light 1 Figure 3

Claims (2)

[Claims] (1) A conductive support, a barrier layer formed on the conductive support, a charge transport layer formed on the barrier layer, and a charge generation layer formed on the charge transport layer. In the electrophotographic photoreceptor, the barrier layer is made of amorphous silicon containing hydrogen, and the charge transport layer is made of amorphous silicon containing at least one element selected from carbon, oxygen, and nitrogen. The charge generation layer is made of hydrogenated silicon and has a layer thickness of 1 to 10 μm.
It is a laminate of a first layer formed of n-type amorphous silicon hydride with a thickness of 0.1 to 5 μm and a second layer formed of amorphous silicon hydride or microcrystalline silicon hydride with a layer thickness of 0.1 to 5 μm. An electrophotographic photoreceptor characterized by: (2) The charge transport and charge generation layer is the layer I of the periodic table.
The electrophotographic photoreceptor according to claim 1, which contains at least one element selected from elements belonging to Group II or Group V.