JPS62114197A - ジヨセフソン効果を用いた記憶セル - Google Patents

ジヨセフソン効果を用いた記憶セル

Info

Publication number
JPS62114197A
JPS62114197A JP60253713A JP25371385A JPS62114197A JP S62114197 A JPS62114197 A JP S62114197A JP 60253713 A JP60253713 A JP 60253713A JP 25371385 A JP25371385 A JP 25371385A JP S62114197 A JPS62114197 A JP S62114197A
Authority
JP
Japan
Prior art keywords
memory cell
line
current
josephson
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60253713A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0335755B2 (enExample
Inventor
Junichi Sone
曽根　純一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60253713A priority Critical patent/JPS62114197A/ja
Publication of JPS62114197A publication Critical patent/JPS62114197A/ja
Publication of JPH0335755B2 publication Critical patent/JPH0335755B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP60253713A 1985-11-14 1985-11-14 ジヨセフソン効果を用いた記憶セル Granted JPS62114197A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60253713A JPS62114197A (ja) 1985-11-14 1985-11-14 ジヨセフソン効果を用いた記憶セル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60253713A JPS62114197A (ja) 1985-11-14 1985-11-14 ジヨセフソン効果を用いた記憶セル

Publications (2)

Publication Number Publication Date
JPS62114197A true JPS62114197A (ja) 1987-05-25
JPH0335755B2 JPH0335755B2 (enExample) 1991-05-29

Family

ID=17255111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60253713A Granted JPS62114197A (ja) 1985-11-14 1985-11-14 ジヨセフソン効果を用いた記憶セル

Country Status (1)

Country Link
JP (1) JPS62114197A (enExample)

Also Published As

Publication number Publication date
JPH0335755B2 (enExample) 1991-05-29

Similar Documents

Publication Publication Date Title
US6185143B1 (en) Magnetic random access memory (MRAM) device including differential sense amplifiers
US6515895B2 (en) Non-volatile magnetic register
US7054190B2 (en) Logic-in-memory circuit using magnetoresistive element
US7751258B2 (en) Magnetic random access memory
EP0366530B1 (en) Josephson memory circuit
US20030086314A1 (en) Nonvolatile memory device having data read operation with using reference cell and method thereof
US6515896B1 (en) Memory device with short read time
JP4365591B2 (ja) 磁気メモリデバイスおよび書込電流駆動回路、並びに書込電流駆動方法
JPS62114197A (ja) ジヨセフソン効果を用いた記憶セル
JPS62114196A (ja) ジヨセフソン効果を用いた記憶セル
US6842390B2 (en) Systems and methods for communicating with memory blocks
US7092285B1 (en) State save-on-power-down using GMR non-volatile elements
Ranmuthu et al. High speed (10-20 ns) non-volatile MRAM with folded storage elements
US7372723B1 (en) State save-on-power-down using GMR non-volatile elements
US20230037252A1 (en) Cryogenic memory cell and memory device
JP4955232B2 (ja) 超伝導記憶セル
US20070091669A1 (en) Giant magneto-resistive static read RAM memory architecture
JPH0223093B2 (enExample)
JPS61243999A (ja) ジヨセフソン効果を用いた記憶セル駆動回路
JPS6387697A (ja) ジヨセフソンメモリ
JPH0362396A (ja) 半導体記憶装置
JPH0368478B2 (enExample)
JPS5829198A (ja) ジヨセフソン・メモリ回路
JPH0198189A (ja) 半導体メモリ
JPH0824258B2 (ja) 超電導論理回路素子

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term