JPS62108244A - Photosensitive composition for two-layered positive and process for forming pattern - Google Patents

Abstract

PURPOSE:To provide a photosensitive compsn. having high sensitivity to ultraviolet rays by incorporating a sensitizer combining a Si-contg. material prepd. by (co)polymerizing with a specified substituted acetylenic compd., with a quinone compd. or a nitro compd., and a surface active agent. CONSTITUTION:The compsn. contains a sensitizer combining a Si-contg. material obtd. by (co)polymerizing with a substituted acetylenic compd. expressed by the formula I (where R1 is silyl or substituted silyl group; R2 is one selected from H, alkyl group, aromatic group, substituted aromatic group silyl group, substituted silyl group), with a quinone compd. or a nitro compd., and a surface active agent. A photoresist made of the compsn. has positive characteristics for ultraviolet rays. Since it is usable in the form of thin film, the resolving power of the photoresist is high. Moreover, since the sensitizer is dispersed uniformly by the effect of the surface active agent, the sensitivity for ultraviolet rays is high, so a pattern can be exposed in a very short time on a large base plate, as well as on a small base plate.

Description

Detailed Description of the Invention [Industrial Application Field] The present invention relates to a two-layer positive photosensitive composition suitable for use in resist pattern formation, and a resist pattern formed using a photoresist material other than the composition. This invention relates to a pattern forming method.

[Conventional technology]

Conventionally, molding of semiconductor devices such as LSI involves providing a resist film made of an organic polymer material on a substrate to be processed, and exposing the desired pattern to ultraviolet rays, X-rays, electron beams, ion beams, etc. Next, a resist pattern is formed on the substrate to be processed by development, and this is used as a mask to process the substrate. .

In recent years, particularly when processing substrates, dry etching methods with high processing accuracy have become popular, such as reactive ion etching using reactive gases such as OF, 00/, or sputter etching using inert gases such as argon. The use of etc. is becoming mainstream.

However, in this substrate processing method, as well as etching the substrate, it also causes the decomposition of the organic polymer material used as a mask that makes up the resist pattern, so in order to perform high-precision substrate processing, a resist pattern with a large film thickness is required. was needed.

Furthermore, it is desired to form a resist pattern on a substrate with steps in order to realize multi-layered wiring, devices with a three-dimensional array structure, and the like.

Therefore, even in such a case, it was necessary to increase the thickness of the resist film in order to cover the step difference t.

However, when forming a pattern with a thick resist, the effects of swelling of the resist pattern during development, generation of standing waves during ultraviolet exposure, pattern blurring due to secondary electrons during electron beam or X-ray exposure, etc. , it becomes difficult to obtain a pattern with high resolution.

As one solution to this problem, a method has been proposed in which a resist is formed in multiple layers instead of in one layer to form a pattern with a large film thickness and a fine pattern with a high shape ratio. That is, after forming a thick organic polymer film as a first layer and forming a thin resist film as a second layer thereon, the second resist film is irradiated with high energy beams such as electron beams. Using the pattern obtained after development as a mask, the first layer organic polymer film is subjected to anisotropic etching using tR gas to obtain a pattern with a high shape ratio.

For this reason, silicon-containing resists that are highly resistant to anisotropic etching using oxygen gas 2 are now being developed as second layer resists.

As the above-mentioned silicon-containing resist, a composition comprising a substituted acetylene compound and a sensitizer has been proposed (Japanese patent application No. 6
No. 0-4786).

[Problem that the invention seeks to solve]

However, although this material is sensitive to ultraviolet light and can provide a pattern with a high shape ratio and high resolution, it is prone to microphase separation due to poor compatibility between the substituted acetylene compound and the sensitizer. . Therefore, even if the amount of sensitizer added is increased, there is a problem in that it is difficult to obtain an improvement in sensitivity corresponding to the amount added.

The present invention has been made in view of the above circumstances, and its purpose is to improve the compatibility of a substituted acetylene compound and a sensitizer, to provide a structure that is highly sensitive to ultraviolet rays, has a high shape ratio, and has a high resolution. The object of the present invention is to provide a two-layer positive photosensitive composition capable of forming a pattern and having high oxygen plasma resistance, and a method for forming a resist pattern using a photoresist material other than this photosensitive composition.

[Failure to solve the problem]

To summarize the present invention, the first invention of the present invention relates to a two-layer positive photosensitive composition, which has the following general formula I: R, -c= a-R2... [I] (in the formula & represents a silyl group or a substituted silyl group; R2 represents one selected from the group consisting of hydrogen, an alkyl group, an aromatic group, a substituted aromatic group, a silyl group, and a substituted silyl group; It is characterized by containing a silicon-containing material obtained by polymerizing or copolymerizing a substituted acetylene compound represented by shall be.

The second invention of the present invention is an invention related to a resist pattern forming method, in which an organic polymer film that is resistant to dry processing of this substrate is formed on a substrate to be processed, and a pattern-forming film is further formed on the organic polymer film that is resistant to dry processing of the substrate. A film of resist material is formed to form a two-layer resist film, and then the upper resist is exposed, drawn, and developed to form a resist pattern on the upper layer. This upper resist pattern is used as a protective mask to form a resist film on the lower layer. (In a resist pattern forming method in which a resist pattern is formed on a substrate to be processed by etching a remaining molecular film with oxygen plasma, in forming a film of the resist material for pattern formation, It is characterized by using a positive photosensitive composition.

The silicon content of the silicon-containing material is preferably 10% by weight or more. Therefore, monomers should be selected such that at least one of the substituted acetylene compounds used in the polymerization or copolymerization contains a (substituted) silyl group, and the silicon content in the resulting polymer is at least 10% by weight. is desirable, and by configuring the pattern forming material in this way, a resist having sufficient plasma resistance can be obtained.

The silyl group or substituted silyl group in the substituted acetylene compound of general formula (I) above includes trimethylsilyl group,
Dimethylethylsilyl group, diethylmethylsilyl group, triethylsilyl group, dimethylphenylsilyl group, dimethyl n-hexylsilyl group, 1-()dimethylsilyl)methyldimethylsilyl group, 1-(+”dimethylsilyl)ethyldimethylsilyl group Examples of the alkyl group include linear alkyl groups such as methyl, ethyl,
Butyl, hexyl, octyl, decyl, dodecyl, hexadecyl groups and branched alkyl groups such as t-butyl, 2-methylpropyl, 3-methylpropyl, 2-methylbutyl, neopentyl, 2-methylpentyl, 3-methylpentyl, Examples include 4-methylpentyl and 2-ethylhexyl groups.

In addition, substituted and unsubstituted aromatic groups include phenyl group,
Examples include methylphenyl group, chloromethylphenyl group, and naphthyl group.

Specific examples of these silicon-containing substituted acetylenes include:
1-trimethylsilyl-1-propyne, 1-(1'-)
dimethylsilylethyl) dimethylsilyl-1-propyne, and the like.

Substituted acetylene monomers that can be copolymerized with these silicon-containing substituted acetylenes include t-butylacetylene, argylacetylene such as 2-octyne, 1-methyl-2-phenylacetylene, 1-chloro-2-phenylacetylene, etc. Examples include arylacetylene.

The substituted acetylene polymer is a white to pale yellow fibrous or powdery solid. The weight average molecular weight (light scattering method) of the molecular film is usually 10,000 or more, preferably 100,000 or more.

Regarding the 1-monoalkyldimethylsilylprobin polymer, see Japanese Patent Application No. 5B-29786 and Japanese Patent Application No. 1983-
87207, arylacetylene polymers in Japanese Patent Application Nos. 57-128576 and 1987-87207, and alkyl acetylene polymers in JP-A-58-223405-9. It is described in.

As the sensitizer, a combination of a quinone compound and a nitro compound is used.

As the quinone compound, a benzoquinone compound, a naphthoquinone compound, or an anthraquinone compound can be used, and specific examples thereof are as follows.

(1) Benzoquinone compounds p-penzquinone, chloranil, 2-methyl-p-benzoquinone, 2-ethel-p-benzoquinone, 2-cyclohexyl-p-benzoquinone, 2-t-butyl-p-benzoquinone, 2-methyl- 6-ethyl-p-benzoquinone, 2-phenyl-p-benzoquinone (11) Naphthoquinone compounds 1.4-naphthoquinone, 2-methyl-1,4-naphthoquinone, 2-methyl-3-ethyl-1°4-naphthoquinone , 5-methyl-1,4-naphthoquinone, 2-nitronaphthoquinone G11) Anthraquinone compounds anthraquinone, 2-methylanthraquinone, 2-ethylanthraquinone, 2-vinylanthraquinone, 2.3
-dimethylanthraquinone, 2-t-butylanthraquinone, 2-nitroanthraquinone In addition, the nitro compounds are as follows.

2-nitrofluorene, 2,7-dinitrofluorene,
2.5-dinitrofluorene, 5-nitroacenaphthene, 5,6-sinitroacenaphthene, 5-pensoylacenaphthene, 1-nitropyrene, p-nitroaniline, 2
．． Examples include, but are not limited to, 4-dinitroaniline, 2-chloro-4-nitroaniline, 2,6-sinitro-4-nitroaniline, and p-nitrobenzaldehyde.

In the photosensitive composition of the present invention, the silicon content of the silicon-containing material is mainly important, and the type, chain length, etc. of the alkyl group in the substituent group and R2 are not so important. However, for example, as the number of carbon atoms in the alkyl group increases, the silicon content decreases, so care must be taken in selecting monomers during polymerization or copolymerization. In addition, if the amount of the sensitizer that is a combination of a quinone compound and a nitro compound is too small, it will not be sensitive to ultraviolet rays, and if it is too large, it will reduce the plasma resistance. It is desirable that it be within the range of . However, in any case, it is preferable that the silicon content of the silicon-containing material in the resulting composition be 10% by weight or more in order to impart sufficient plasma resistance to the pattern-forming material.

Next, as surfactants, ionic surfactants include 4
Among the nonionic surfactants, those having an HLB in the range of 1 to 10 are preferred.

Methods for determining HIIB include Griffin's method, Davis' method, Yojo's method, etc. Any of these methods may be used as long as HIJB is 1 to 10, but Griffin's method is generally used.

Specifically, the rules are as follows.

(1) Ionic surfactant Quaternary ammonium salt type cationic surfactant Carbon number is 8 or more
Examples thereof include trialkylmethylammonium chloride, trialkylmethylammonium bromide, trialkylbenzylammonium chloride, and trialkylbenzylammonium bromide, each having 20 alkyl groups.

0 Nonionic surfactant [1] Polyoxyalkylene nonionic surfactant Active hydrogen-containing compound containing alkylene oxide (ethylene oxide (abbreviated as EO), propylene oxide (abbreviated as po)
etc.] are added. Examples of active hydrogen-containing compounds include phenols, alcohols, carboxylic acids, amines, mercaptans, amides, and the like.

As phenols, alkylphenols or alkylnaphthols having an alkyl group usually having 8 to 12 carbon atoms;
Examples include styrenated phenol (reaction product of phenol, alkylphenol, alkylnaphthol phenylphenol, etc., and 1 to 20 moles of styrene).

The alcohol has 8 to 20 carbon atoms, preferably 12 carbon atoms.
~18 linear or branched natural or synthetic aliphatic alcohols, polyhydric alcohols with 2 to 8 hydroxyl groups, or their intramolecular anhydrides (glycerin, pentaerythritol, flupitol, sorbitan, etc.) polyhydric alcohols with the following fatty acids Examples include partial esters.

Carboxylic acids have 8 to 20 carbon atoms, preferably 12 carbon atoms.
~18 saturated or unsaturated fatty acids, 2 to 4 carboxyl groups
Examples include polycarboxylic acids.

Examples of amines include alkyl amines having 8 to 20 carbon atoms, alkylene diamines having 2 to 6 carbon atoms, and polyalkylene ("
S, 8) Boria 5, carbon number 8 as mercaptans
-20 alkyl mercaptans, and amides include alkylolamides (reactants of fatty acids having 5 to 20 carbon atoms and mono- or jetanolamines).

Specific examples of polyoxyalkylene nonionic surfactants are as follows.

(1) Polyoxyethylene alkylaryl ether EO adducts of alkylphenols or alkylnaphthols, such as nonylphenol EO (2).

(2) Polyoxyethylene polyhydric alcohol fatty acid ester EO adduct of ester of polyhydric alcohol or intramolecular anhydride and fatty acid (e.g. sorbitan monostearate) KO (
4).

(3) Polyoxyethylene fatty acid ester Ester (mono- or diester) of fatty acid and polyethylene glycol
or FXo adducts of fatty acids, such as polyethylene glycol (molecular weight 200) stearic acid monoester, polyethylene glycol (molecular weight [200)] lauric acid diester, etc.

(4) E! of HoIJ oxyethylene alkyl ether higher alcohol! 0 adducts such as oleyl alcohol Eo
(2) etc.

(5) Polyoxyethylene polyoxypropylene polyol Pluronic type nonionic surfactant For example, EO adduct of polypropylene glycol (abbreviated as I'PG) [average molecular weight (MY) 900 to 2900]; Tetronic type nonionic surfactant Surfactants such as KO adducts of polyoxypropylene alkylene diamine [Tetronic (
made by Wyandotte)] etc.

[2] Polyhydric alcohol type nonionic surfactant (1)
Polyhydric fluoric fatty acid ester Esters of polyhydric alcohols or intramolecular anhydrides and fatty acids, such as oleic acid ester of sorbitan, stearic acid ester of sorbitan, palmitic acid ester of sorbitan, lauric acid ester of sorbitan: esters, solemono, sesqui or , triester, etc.

Among these, preferred are polyoxyethylene alkylaryl ethers, and particularly preferred are 101 to 5 molar adducts of nonylphenol.

For information on nonionic surfactants, see "Introduction to New Surfactants"
(written by Takehiko Fujimoto, published by Sanyo Chemical Industries, Ltd. in 1972).

Further, according to the present invention, there is provided a resist pattern forming method performed using a photosensitive composition having the above composition as described above.

Examples of developing solvents include mixed solvent systems consisting of the following combinations of solvents.

Ethylcyclohexane and diimbutylketone, ethylcyclohexane and methylisobutylketo/, ethylcyclohexane cyacetone alcohol, ethylcyclohexane and ethyl cellosolve, ethylcyclohexane and ethyl cellosolve acetate, ethylcyclohexane and isoamyl acetate, ethylcyclohexane and benzyl acetate, diisobutylketone and diacetone Acetone alcohol, diisobutyl ketone and ethyl cellosolve, diisobutyl ketone and ethyl cellosolve acetate, di-n-butyl ether and diacetone alcohol, di-n-7F thyl ether and cyinobutyl ketone, di-n-butyl ether and methyl isobutyl ketone, di-n-butyl ether and diacetone alcohol -butyl ether and ethyl cellosolve, di-n-butyl ether and ethyl cellosolve acetate), and mixed solvent systems in which di-n-butyl ether and benzyl acetate are combined.

Among these, particularly preferred are mixed solvent systems in which diisobutyl ketone and diacetone alcohol, ethyl 7-chlorohexane and diisobutyl ether, and di-n-butyl ether and diacetone alcohol are combined.

The photosensitive composition according to the present invention functions as a positive type with respect to ultraviolet light.

In addition, in microfabrication of a substrate to be processed using a multilayer resist, the lower organic polymer film is etched with oxygen plasma as a protective mask for the upper resist pattern, so the upper resist has sufficient resistance to oxygen plasma. Must have.

Regarding this point, according to the present invention, the oxygen plasma resistance of the resist material is determined by the silicon content, and the oxygen plasma resistance of the resist made of a polymer or copolymer obtained from a monomer represented by the general formula (R) is determined by the silicon content. The etching rate is such that if the silicon content is at least 10 wt.
is known to be almost always zero. therefore,
The monomers are selected such that the silicon content is 10% by weight or more.

Furthermore, in the resist pattern forming method using a resist material of the present invention, first, an organic polymer film is formed on a substrate to be processed. This organic polymer film can be made of various known photoresists, such as AZ series manufactured by Sibley (Elhiplθy), 011'PRXTPR manufactured by Tokyo Ohka Co., Ltd.
, 0EIR, OMR, etc. can be exemplified. The organic polymer film is formed by dissolving these in a suitable solvent and applying the resulting solution by a spin code method, a spray method, or the like.

Next, a silicon-containing resist film of the present invention is formed on the first layer of the organic polymer film. This is similarly accomplished by dissolving the silicon-containing resist material in a suitable solvent and using a spin code method, a spray method, or the like.

At this time, due to the action of the surfactant, a uniform film can be formed without phase separation between the acetylene compound and the sensitizer.

The organic polymer film and silicon-containing resist film thus formed are then heated, for example, in an electric furnace in a dry atmosphere.
The organic solvent in the film is removed by subjecting it to a silypake treatment using infrared heating or the like. However, this prebaking treatment can also be performed independently after forming the organic polymer film and the silicon-containing resist film.

The obtained multilayer resist film is further subjected to a step of forming a C resist pattern, and as the first step, a pattern forming process is first performed on the second layer, that is, the upper silicon-containing resist film. The mask pattern is printed by aligning the masks and irradiating them with ultraviolet rays through this mask, and then developing with a suitable developer, such as a mixed solvent of methyl ethyl ketone and impropyl alcohol, a mixed solvent of xylene and isopropyl alcohol, etc. , washing, and post-baking to ensure pattern adhesion and to remove solvent during development.

Next, the organic polymer film is etched as a second step, and this operation is carried out by oxygen plasma etching using the pattern of the silicon-containing resist film as a mask.

This etching of the organic polymer film by oxygen plasma etching is exactly the same technique as the plasma ashing used for stripping off the resist film after completing the etching process of the substrate by conventional photoetching, and it is This method uses a chemical reaction between atomic oxygen generated in oxygen plasma and the polymer to reduce the polymer to a lower molecular weight, and oxidizes the low-molecular resin to produce CO and vaporize it to CO.

This operation can be carried out, for example, in a cylindrical plasma etching apparatus or a parallel plate plasma etching apparatus using oxygen as the reactive gas, ie, the etching gas.

As described above, according to the method of the present invention, a fine resist pattern can be advantageously obtained without forming so-called whiskers or bridges that cause a decrease in resolution, thereby making it possible to advantageously obtain a fine resist pattern for precision processing of fine patterns. A resist pattern can be obtained. Further, the substrate is processed using this resist pattern as a mask, and dry etching methods such as sputter etching, gas plasma etching, and ion beam etching can be used as the processing method.

A photoetching process using a multilayer resist method including a film of the resist material of the present invention is completed by a stripping operation of the resist film. The resist film can be peeled off simply by dissolving the organic polymer material of the first layer. This organic polymeric material is any photoresist, and is not altered in any way during the photoetching process.
(hardening, etc.), the organic solvent of each known 7-otoresist itself can be used.

〔Example〕

Hereinafter, the present invention will be explained in more detail with reference to Examples and Production Examples, but the scope of the present invention is not limited in any way by these Examples.

Production Example 1 1-trimethylsilyl-1-propyne 1122 was dissolved in toluene 11, and niobium pentachloride 8?
was added and reacted at 80°C for 24 hours. Reaction mixture was poured into methanol to obtain a white polymer.

Production Examples 2 to 6 In Production Example 1, 1-dimethylethylsilyl-1-propyne (1-)-dimethylsilyl-1-propyne (
Production Example 2), 1-dimethylphenyl7ly-1-propyne (M Production Example 3), 1-dimethylchloromethylsilyl-1-propyne (Production Example 4), 1-(trimethylsilylmethyl)dimethylsilyl-1-propyne ( Production example 5),
A white polymer was similarly obtained using 1-(1'-)limethylsilylethyl)dimethylsilyl-1-propyne (Production Example 6).

Example 1 Polymer 12 obtained in Production Example 1, 1,4-su7toquino:/Q, 2t, and 2-nitrofluorene 0,05 F
and trioctylmethylammonium chloride (hereinafter T
It is abbreviated as OMAO. ) 0.01 F xylene 50tR
t and coated onto a silicon wafer to a thickness of approximately [12 μm.

Next, a mask is placed on this wafer, and a pattern is baked by irradiating it with ultraviolet light using a 3kW ultra-high pressure mercury lamp.
It was baked at 80° C. for 30 minutes in a stream of nitrogen. Then, after developing with a 1=5 mixed solvent of ethylcyclohexane and diisobutyl ketone and rinsing with diisobutyl ketone,
The polymer in the areas not irradiated with ultraviolet rays remained, and a positive pattern was formed. The relationship between the residual film rate after development and the irradiation amount is the first
As shown in the figure. That is, FIG. 1 is a graph showing the ultraviolet #A sensitivity of the formed resist pattern in terms of the relationship between the ultraviolet irradiation amount (mJ~) (horizontal axis) and the normalized residual film rate (%) (vertical axis).

As is clear from this graph, the ultraviolet sensitivity at which the residual film rate is 0% is 50 m:J/cJ, which is a sensitivity that can be used sufficiently for practical purposes. In addition, the r value, which is expressed by the slope of the sensitivity curve as shown in Figure 1, is a function of the resolution.
In this case, it was approximately &0. In fact, a pattern of 1.0 micron lines and spaces could be formed without producing so-called whiskers or bridges, and its high resolution was confirmed.

Further, etching was performed using a parallel plate type reactive ion etching apparatus using oxygen gas as an etchant gas (applied power: 10 W, etching chamber pressure: 10 mTorr). Under these etching conditions, the etching rate of the above polymer is 5 am/min or less, and the etching rate of Az resist (manufactured by Sibley) is 100 nm/min.
It was a minute.

Example 2 The ultraviolet sensitivity, r value, and etching rate with oxygen gas were measured for each of the polymers obtained in Production Examples 2 to 6 according to the method of Example 1, and the results were as shown in Table 1 below. .

Table 1 Comparative Example 1 In Example 1, TOMAC! When a resist film was formed without adding , and the ultraviolet sensitivity at which the remaining film rate was 0% was measured in the same manner as in Example 1, it was 2o.

mJ/c! It was I. Further, at this time, the r value and the etching rate using the resolving oxygen gas were exactly the same as in Example 1.

Example 3 AZ1350 resist (manufactured by Sibley) on silicon wafer
was applied to a thickness of 2 μm and prebaked at 1-00° C. for 30 minutes. On this AZ resist, a resist consisting of polyacetylene, 1,4-naphthoquinone, 2-nitrofluorene, and TOMAO obtained in Production Example 1 was applied to a thickness of about 12μ in the same manner as in Example 1, and a mask was applied. The predetermined pattern was printed by irradiating ultraviolet rays using an A3kW ultra-high pressure mercury lamp, and then baked at 80°C for 30 minutes.
5 mixed solvent and rinsed with diisobutyl ketone.

As a result, a 1.0 μm line and space pattern was formed on the AZ resist. Thereafter, parallel plate reactive ion etching was performed using oxygen gas as an etchant. After etching for 25 minutes, the AZ resist in the areas not covered by the pattern completely disappeared, and a pattern with a thickness of 2.2 μm was formed with lines and spaces of 1.0 μm.

Furthermore, this pattern could be easily removed with acetone.

〔Effect of the invention〕

As explained above, the photoresist made from the two-layer positive photosensitive composition according to the present invention exhibits positive energy ray-sensitive characteristics with respect to ultraviolet rays, and also has high resolution because it is used as a thin film. Additionally, because the sensitizer is uniformly dispersed by the action of the surfactant, it exhibits high sensitivity to ultraviolet light.

Therefore, a pattern can be exposed even on a large substrate in an extremely short time. Therefore, productivity becomes very high. Furthermore, since it contains silicon, it has high resistance to oxygen plasma, and therefore can be used as an upper layer resist of a two-layer resist having a thick organic polymer film as the lower layer. When used as a two-layer resist, a submicron pattern with a significantly high shape ratio can be formed on a substrate having steps.

The above has an extremely large effect in manufacturing semiconductor devices and the like.

[Brief explanation of drawings]

FIG. 1 is a graph showing the ultraviolet characteristics of a resist pattern formed by the method of the present invention in terms of the relationship between the amount of ultraviolet irradiation and the normalized residual film rate.

Claims (1)

[Claims] 1. The following general formula I: R_1-C≡C-R_2...[I] (In the formula, R_1 is a silyl group or a substituted silyl group, and R_2 is hydrogen, an alkyl group, an aromatic group, a substituted aromatic group. R
A silicon-containing material obtained by polymerizing or copolymerizing a substituted acetylene compound represented by A two-layer positive photosensitive composition comprising: 2. The two-layer positive photosensitive composition according to claim 1, wherein the quinone compound is a benzoquinone compound, a naphthoquinone compound, or an anthraquinone compound. 3. The silicon content of the silicon-containing material is 10% by weight
The two-layer positive photosensitive composition according to claim 1, which is as follows. 4. Form an organic polymer film that is resistant to dry processing of this substrate on the substrate to be processed, further form a film of a resist material for pattern formation on top of it to form a two-layer structure of the resist film, and then After exposing, drawing, and developing the upper layer resist to form a resist pattern on the upper layer, the lower organic polymer film is etched with oxygen plasma using the upper resist pattern as a protective mask to form a resist pattern on the substrate to be processed. In the resist pattern forming method, when forming a film of the resist material for pattern formation, the following general formula I: R_1-C≡C-R_2...[I] (wherein R_1 is a silyl group or a substituted silyl group, R_2 represents one selected from the group consisting of hydrogen, an alkyl group, an aromatic group, a substituted aromatic group, a silyl group, and a substituted silyl group;
A silicon-containing material obtained by polymerizing or copolymerizing a substituted acetylene compound represented by A resist pattern forming method characterized by using a two-layer positive photosensitive composition containing. 5. The silicon content of the silicon-containing material is 10% by weight
The resist pattern forming method according to claim 4, which is the above. 6. The resist pattern forming method according to claim 4, wherein the quinone compound is a benzoquinone compound, a naphthoquinone compound, or an anthraquinone compound.