JPS62107437U - - Google Patents
Info
- Publication number
- JPS62107437U JPS62107437U JP19749385U JP19749385U JPS62107437U JP S62107437 U JPS62107437 U JP S62107437U JP 19749385 U JP19749385 U JP 19749385U JP 19749385 U JP19749385 U JP 19749385U JP S62107437 U JPS62107437 U JP S62107437U
- Authority
- JP
- Japan
- Prior art keywords
- partition
- semiconductor processing
- partition wall
- heat
- resistant film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005192 partition Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は、本考案の実施例を示す図で、隔壁装
置の一部を示す縦断面図、第２図は半導体処理装
置の概略を示す平面図である。
Ｓ……半導体処理装置、２……隔壁装置、４…
…ドア、１１……耐熱膜。
FIG. 1 is a diagram showing an embodiment of the present invention, in which a vertical sectional view showing a part of a partition device, and FIG. 2 a plan view showing an outline of a semiconductor processing device. S...Semiconductor processing equipment, 2...Partition device, 4...
...Door, 11...Heat-resistant film.
Claims (1)
する耐熱膜を形成したことを特徴とする半導体処
理装置の隔壁装置。 ２ 隔壁装置は、そのドアが壁面の一部を構成し
ていることを特徴とする実用新案登録請求の範囲
第１項記載の半導体処理装置の隔壁装置。 ３ 耐熱膜は、少なくともＳｉＯ２，Ａｌ２Ｏ３
，ＴｉＯ２，ＺｒＯ２のいずれか１つを含んでい
ることを特徴とする実用新案登録請求の範囲第１
項記載の半導体処理装置の隔壁装置。[Claims for Utility Model Registration] 1. A partition device for semiconductor processing equipment, characterized in that a heat-resistant film made of ceramics as a main material is formed on the wall surface of the partition device. 2. A partition wall device for a semiconductor processing apparatus according to claim 1, wherein the door of the partition wall device constitutes a part of a wall surface. 3 The heat-resistant film is made of at least SiO 2 , Al 2 O 3
, TiO 2 , ZrO 2 Claim 1
A partition wall device for a semiconductor processing apparatus as described in 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19749385U JPS62107437U (en) | 1985-12-24 | 1985-12-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19749385U JPS62107437U (en) | 1985-12-24 | 1985-12-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62107437U true JPS62107437U (en) | 1987-07-09 |
Family
ID=31157284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19749385U Pending JPS62107437U (en) | 1985-12-24 | 1985-12-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62107437U (en) |
-
1985
- 1985-12-24 JP JP19749385U patent/JPS62107437U/ja active Pending