JPS62106686A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS62106686A
JPS62106686A JP60246604A JP24660485A JPS62106686A JP S62106686 A JPS62106686 A JP S62106686A JP 60246604 A JP60246604 A JP 60246604A JP 24660485 A JP24660485 A JP 24660485A JP S62106686 A JPS62106686 A JP S62106686A
Authority
JP
Japan
Prior art keywords
wafer
laser
active layer
layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60246604A
Other languages
Japanese (ja)
Inventor
Yoshihiro Mori
義弘 森
Masaya Mannou
萬濃 正也
Takeshi Uenoyama
雄 上野山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60246604A priority Critical patent/JPS62106686A/en
Publication of JPS62106686A publication Critical patent/JPS62106686A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4204Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]

Abstract

PURPOSE:To facilitate convergence of a laser beam without using a lens by providing monolithic integration of concave mirrors in a DFB laser. CONSTITUTION:A grating 2 for distributed reflection is formed on an N-type InP substrate 1 and an N-type InGaAsP waveguide layer 2, a P-type InGaAsP active layer 3, a P-type InP cladding layer 4 and a P-type InGaAsP cap layer 5 are formed successively on the grating 2 to form a material wafer. A BH laser wafer is composed of this material wafer. Holes 6, which have partially circular cross sections and side walls vertical to the wafer surface, are formed in the wafer and, at the same time, electrodes 8 and 9 are provided on the top and bottom surfaces of the wafer to form a DFB laser. With this constitution, as a laser beam 10 emitted from the laser 15 is focused on one point, alignment can be achieved easily by providing the end surface 12 of an optical fiber 11 at that point.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、半導体レーザに関する。[Detailed description of the invention] Industrial applications The present invention relates to semiconductor lasers.

従来の技術 従来、半導体レーザから出射されだレーザ光を光ファイ
バに入射させるには、第3図に示すようにレンズを用い
て行なわれてきた。第3図ではセルフォックレンズ20
を用いているが、この他に球レンズ、平板マイクロレン
ズ等を用いることもできる。21は光ファイバ、22は
半導体レーザである。また光ファイバから半導体レーザ
への戻り光をふせぐため、YIG等から成る光アイソレ
ータを取り入れることもある。
2. Description of the Related Art Conventionally, laser light emitted from a semiconductor laser has been made to enter an optical fiber using a lens as shown in FIG. In Figure 3, SELFOC lens 20
is used, but in addition to this, a ball lens, a flat microlens, etc. can also be used. 21 is an optical fiber, and 22 is a semiconductor laser. Furthermore, in order to prevent light returning from the optical fiber to the semiconductor laser, an optical isolator made of YIG or the like may be incorporated.

発明が解決しようとする問題点 ところが、このような構成は部品点数が、少なくとも半
導体レーザ、レンズ、光ファイバの3つとなシ、各々の
光軸を一致させ且つ長期安定性を得る固定法の開発に多
くの時間と労力が費されている。
Problems to be Solved by the Invention However, since such a configuration requires at least three components: a semiconductor laser, a lens, and an optical fiber, it is necessary to develop a fixing method that aligns the optical axes of each component and achieves long-term stability. A lot of time and effort is spent on.

問題点を解決するだめの手段 本発明は上記の問題点に対し、DFBレーザに凹面鏡を
モノリシックに集積させることで、レンズを用いなくと
もレーザ光の収束を可能にするものである。
Means for Solving the Problems The present invention solves the above problems by monolithically integrating a concave mirror into a DFB laser, thereby making it possible to converge laser light without using a lens.

作  用 本発明によれば、部品点数を減らし、光軸の一致、長期
安定性を容易に確保できる。
Effects According to the present invention, the number of parts can be reduced, and alignment of optical axes and long-term stability can be easily ensured.

実施例 第1図は本発明に基づ〈実施例に光ファイバーを組合せ
た状態の断面図、第2図は第1図の実施例の上面図を示
す。
Embodiment FIG. 1 is a sectional view of the embodiment according to the present invention combined with an optical fiber, and FIG. 2 is a top view of the embodiment of FIG. 1.

(110)面を主面とするn型InP 基板1の上に分
布反射用のグレーティング2を形成した後、順次n型部
nGaAgP導波層、p型InGaAsP活性層3、p
型部nPクラッド層4、p型部nGaAsPキャップ層
5を形成し元ウェハとする。その後、く111〉方向に
幅約2μmの部分を残して元ウェハを化学エツチングし
、2回目の結晶成長で電流ブロック層を形成し、通常の
BHレーザウェハを作成する。この後、第2図に示すよ
うに半円状のエツチング穴6を化学エツチングで形成す
る。
After forming a grating 2 for distributed reflection on an n-type InP substrate 1 whose main surface is the (110) plane, the n-type nGaAgP waveguide layer, the p-type InGaAsP active layer 3, the p-type InGaAsP active layer 3,
A mold part nP cladding layer 4 and a p type part nGaAsP cap layer 5 are formed to form a base wafer. Thereafter, the original wafer is chemically etched leaving a portion with a width of about 2 μm in the <111> direction, and a current blocking layer is formed in the second crystal growth to produce a normal BH laser wafer. Thereafter, as shown in FIG. 2, a semicircular etching hole 6 is formed by chemical etching.

このときの断面図を第1図に示すように、穴6は一部分
が円状、残りの部分がウエノ・表面に対し垂直になる。
As shown in FIG. 1, a cross-sectional view at this time, a portion of the hole 6 is circular and the remaining portion is perpendicular to the surface of the wafer.

このときの化学エツチングには例えば2重量パーセント
の臭素メタノール溶液を用いる。
For example, a 2 weight percent bromine methanol solution is used for chemical etching at this time.

その後、ウェハ上面と下面に電極8.9を設ける。Thereafter, electrodes 8.9 are provided on the top and bottom surfaces of the wafer.

このようにして作成されたDFBレージ15から出力さ
れるレーザ光10は第1図に示すように一点で集光する
。よってこの位置に光ファイバ11の端面12を持って
くれば、簡単に位置合わせができる。また部分点数が2
つなので従来の3つ以上に比べ固定も簡単になる。13
はファイバーのクラッド、14はコアである。
The laser beam 10 output from the DFB laser 15 created in this way is focused at one point as shown in FIG. Therefore, by bringing the end face 12 of the optical fiber 11 to this position, alignment can be easily performed. Also, the partial score is 2
Because there are only two, it is easier to fix than the conventional three or more. 13
is the cladding of the fiber, and 14 is the core.

なお、プレーナ化のためエツチング穴6を誘電体で充た
してもなんら支障はない。
Note that there is no problem even if the etched hole 6 is filled with a dielectric material for planarization.

また、第1図で明らかなようにDFBレーザのもう一方
の端面16は、活性層に対し垂直でないのでファブリペ
ローモードが表れに((、DFBレーザの特性を向上さ
せている。
Furthermore, as is clear from FIG. 1, the other end face 16 of the DFB laser is not perpendicular to the active layer, so the Fabry-Perot mode appears ((), improving the characteristics of the DFB laser.

発明の効果 本発明によれば、レンズを介することなく半導体レーザ
の光を集光することができ、光7アイパー等との結合に
も部品点数を少なくでき、光軸合わせ、長期安定性等の
面ですぐれた効力を持つものである。
Effects of the Invention According to the present invention, it is possible to condense the light of a semiconductor laser without passing through a lens, and the number of parts can be reduced for coupling with an optical 7-eyeper, etc., and improvements in optical axis alignment, long-term stability, etc. It has excellent efficacy in many aspects.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明洗基づ〈実施例のレーザに光7アイパを
結合させたときの断面図、第2図は第1図の実施例の上
面図、第3図は従来のレーザと光ファイバの結合状態を
示す図である。 2・・・・・・グレーティング、3・・・・・・活性層
、e・・・・・・穴、1Q・・・・・・レーザ光、11
・・・・・・光ファイバー、15・・・・・・DFBレ
ーザ。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名嘉1
図 ?グレニテぷグ
Fig. 1 is a cross-sectional view of a laser according to an embodiment of the present invention coupled with an optical 7-eyeper, Fig. 2 is a top view of the embodiment of Fig. 1, and Fig. 3 is a conventional laser and an optical FIG. 3 is a diagram showing a state of fiber coupling. 2... Grating, 3... Active layer, e... Hole, 1Q... Laser light, 11
...Optical fiber, 15...DFB laser. Name of agent: Patent attorney Toshio Nakao and 1 other person Yoshio 1
figure? Glenite Pugu

Claims (1)

【特許請求の範囲】[Claims] (110)面を主面とするInP基板上に形成された活
性層とそれをはさみ込むクラッド層と、前記活性層近傍
に〈111〉方向に共振するように設けられた分布反射
型共振器とを有するとともに、表面より少なくとも上記
活性層まで達する穴を少なくとも1つ形成し、前記穴の
形状が前記活性層から出射されたレーザ光が一点で集光
するような凹面状になっていることを特徴とする半導体
レーザ装置。
An active layer formed on an InP substrate having a (110) plane as a main surface, a cladding layer sandwiching the active layer, and a distributed reflection resonator provided near the active layer so as to resonate in the <111> direction. and at least one hole reaching at least the active layer from the surface, and the hole has a concave shape such that the laser beam emitted from the active layer is focused at one point. Features of the semiconductor laser device.
JP60246604A 1985-11-01 1985-11-01 Semiconductor laser Pending JPS62106686A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60246604A JPS62106686A (en) 1985-11-01 1985-11-01 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60246604A JPS62106686A (en) 1985-11-01 1985-11-01 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS62106686A true JPS62106686A (en) 1987-05-18

Family

ID=17150879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60246604A Pending JPS62106686A (en) 1985-11-01 1985-11-01 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS62106686A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01175784A (en) * 1987-12-29 1989-07-12 Matsushita Electric Ind Co Ltd Optical integrated circuit
US4950622A (en) * 1988-04-28 1990-08-21 Korea Advanced Institute Of Science And Technology Method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor laser diode
US4971927A (en) * 1989-04-25 1990-11-20 International Business Machines Corporation Method of making embedded integrated laser arrays and support circuits
US4990465A (en) * 1985-01-22 1991-02-05 Massachusetts Institute Of Technology Method of forming a surface emitting laser
EP0744798A1 (en) * 1995-05-24 1996-11-27 Robert Bosch Gmbh Device for laser coupling
US6327285B1 (en) * 1997-05-09 2001-12-04 Semiconductor Laser International Corporation Surface mounted 2-D diode laser array package
EP1548473A1 (en) * 2003-12-24 2005-06-29 STMicroelectronics S.r.l. Optical module including an optoelectronic device with a reflecting optical coupling device
WO2020246042A1 (en) * 2019-06-07 2020-12-10 日本電信電話株式会社 Surface-emitting optical circuit and surface-emitting light source using same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990465A (en) * 1985-01-22 1991-02-05 Massachusetts Institute Of Technology Method of forming a surface emitting laser
JPH01175784A (en) * 1987-12-29 1989-07-12 Matsushita Electric Ind Co Ltd Optical integrated circuit
US4950622A (en) * 1988-04-28 1990-08-21 Korea Advanced Institute Of Science And Technology Method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor laser diode
US4971927A (en) * 1989-04-25 1990-11-20 International Business Machines Corporation Method of making embedded integrated laser arrays and support circuits
EP0744798A1 (en) * 1995-05-24 1996-11-27 Robert Bosch Gmbh Device for laser coupling
US6327285B1 (en) * 1997-05-09 2001-12-04 Semiconductor Laser International Corporation Surface mounted 2-D diode laser array package
EP1548473A1 (en) * 2003-12-24 2005-06-29 STMicroelectronics S.r.l. Optical module including an optoelectronic device with a reflecting optical coupling device
US7223024B2 (en) 2003-12-24 2007-05-29 Stmicroelectronis S.R.L. Optical module including an optoelectronic device
WO2020246042A1 (en) * 2019-06-07 2020-12-10 日本電信電話株式会社 Surface-emitting optical circuit and surface-emitting light source using same
JPWO2020246042A1 (en) * 2019-06-07 2020-12-10

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