JPS62105951A - Low temperature burn ceramic composition - Google Patents
Low temperature burn ceramic compositionInfo
- Publication number
- JPS62105951A JPS62105951A JP60246627A JP24662785A JPS62105951A JP S62105951 A JPS62105951 A JP S62105951A JP 60246627 A JP60246627 A JP 60246627A JP 24662785 A JP24662785 A JP 24662785A JP S62105951 A JPS62105951 A JP S62105951A
- Authority
- JP
- Japan
- Prior art keywords
- low temperature
- ceramic composition
- less
- temperature burn
- excess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
「産業上の利用分野」
本発明低温焼成磁器組成物ｉａ、ＩＣＣバック−ジ、多
層基板等の電気絶縁材料に好適に利用され得る４、
「従来の技術」
従来、上記電気絶縁材料とＬ２ては絶縁性、耐熱性、機
械的強度等緒特性に優れたアルミナ又は焼結温度が低く
てＡｇ ＊ Ａｕ ＋ Ｃ１，１等の低抵抗導体材料と
同時焼結し得る結晶化メｌプスが使われている。DETAILED DESCRIPTION OF THE INVENTION "Industrial Field of Application" The low-temperature fired porcelain composition of the present invention can be suitably used for electrical insulating materials such as ia, ICC backges, multilayer substrates, etc. 4. "Prior Art" Conventionally, The above electric insulating material and L2 are alumina, which has excellent properties such as insulation, heat resistance, and mechanical strength, or has a low sintering temperature and can be co-sintered with low-resistance conductor materials such as Ag * Au + C1,1. Crystallized Melpus is used.
「発明が解決しよりとす、ヒ）間（但侭−１ア刀ミナは
焼結温度が１３００’ＣＪｇ上と高いごとから、Ｗ、
Ｍｏ −Ｍｎ等の高？Ａ点高抵抗導体材料を配線に用い
なければ表らず、１１号伝播遅延を招来していた。一方
、結晶化ガモスはコストが高い。``I hope the invention solves the problem, because the sintering temperature of Tajima-1 Ato Mina is as high as 1300'CJg, W.
Mo-Mn etc. high? This would not occur unless a high-resistance conductor material was used for the wiring at point A, resulting in No. 11 propagation delay. On the other hand, crystallized gamos is expensive.
「問題点を解決するための−ｆ−球１１本発明は上記の
問題点を′ｉ＠、沫し２、焼結温度が低く、コストの低
い電気絶縁材料として好適な磁器組成物を提供すること
を目的とするものでその第一の手段は重量基準でＣａ
＋Ｍｇ ＋ Ｌｉ ＪＡｌ ＋ Ｍｎ ｒ Ｈａ及びＳ
ｒのうちから選ばれる−１以上の元素の７ツ化物１〜１
２チ、Ａｌ１０３１〜２０９ｂ 、Ｓｉｎｇ １４〜５
０’Ｊ、ＣａＯ３〜１８％、Ｂ１０１１〜８チ並びにセ
ルジアン１０〜８０チよシなる磁器組成にある。また、
第一の手段と関連する同様に本発明の第二の手段は、Ｍ
ｇＯ５ ％以下、Ｔｉ０ｚ５％以下及びＬｉｄ ２ ％
以下のうちから選ばれる一棟以上を第一の手段の磁器組
成に追加して合計１００％とした磁器組成にある。``-f-ball for solving the problems 11 The present invention solves the above problems, 2, and provides a porcelain composition that has a low sintering temperature and is suitable as a low-cost electrical insulating material. The first method is to calculate Ca on a weight basis.
+Mg + Li JAl + Mn r Ha and S
Heptadides 1 to 1 of -1 or more elements selected from r
2chi, Al1031~209b, Sing 14~5
The porcelain composition is 0'J, 3-18% CaO, B1011-80 and Celsian 10-80. Also,
A second means of the invention, also related to the first means, is that M
gO5% or less, Ti0z5% or less and Lid2%
One or more buildings selected from the following are added to the porcelain composition of the first means to make the total 100%.
「作用」
本発明磁器組成物は、各成分が独立して作用するのでは
なく、全成分が関連して相乗作用を生じることにより、
熱膨張係数、焼結温度及び誘電率が低く、機械的強度の
高いものとなる。"Effect" The porcelain composition of the present invention has the following effects: each component does not act independently, but all components interact to produce a synergistic effect.
The thermal expansion coefficient, sintering temperature, and dielectric constant are low, and the mechanical strength is high.
ただし、７フ化物は特に機械的強度を上げるものであり
、＆Ｏｎは特に焼結温度を下げるものでおシ、セルシア
／は特に熱膨張係数を下げるものであり、いずれも含有
量が上記の下限に満たないとその作用が生じにくくなる
。また、Ａ Ｉ２ Ｏｓ不足、５ｉＯｚ過剰、ＭｇＯ過
剰及びフッ化物過剰はいずれも熱膨張係数の過大を招来
する。However, heptafluoride particularly increases mechanical strength, &On particularly lowers the sintering temperature, and Celsius/ is particularly lowers the coefficient of thermal expansion, and the content of all of them is above the lower limit. If the amount is less than that, the effect will be less likely to occur. Furthermore, insufficient A I2 Os, excess 5iOz, excess MgO, and excess fluoride all lead to an excessive coefficient of thermal expansion.
Ａ １２０ｓ過剰、Ｓｉｎｇ不足、ＭｇＯ過剰、ＣａＯ
不足及びセルジアン過剰はいずれも焼結温度を高くする
。ＳｉＯ２不足及びＴ Ｉ Ｏｘ過剰は誘電率を過大に
する。ＢｓＯｓ過剰、ＬｂＯ過剰及び七ルジア：ノ過剰
は機械的強度を低下さゼ゛る。。A 120s excess, Sing deficiency, MgO excess, CaO
Both deficits and Selsian excesses increase the sintering temperature. A lack of SiO2 and an excess of T I Ox will cause the dielectric constant to be too high. Excess BsOs, excess LbO, and excess 70% decrease mechanical strength. .
「実施例」
アルミナ、無水ケイ酸、酸化マグネシウム、炭酸カルシ
ウム、二酸化チタン、酸化ホウ素、メタケイ酸リチウム
、フッ化物及びセルジアンを焼成優に表に示す組成とな
るように配合し、とのｆＭｉｌ１合物５００ｒにヒドロ
キゾグロビルセルロース（日本曹達（力製１ニーＮＰＣ
−８Ｌ）Ｘ５Ｆと水４０（１１１ｊ１１とを添加し、内
容積３Ωのアルミナ磁器ボールミルに１５醇φのアルミ
プ磁器球石２Ｋｆとともに入れ、８４ ｒｐｍで５０時
間混合し、凍結乾燥し、８２メツシエの篩に通した後、
圧力１５００ Ｋｔ／ａａで成形し、衣に示す焼結温度
で焼結することによって焼結体へ１〜翫８０を製造した
。焼結体先１〜−８０について抗折強度、誘電率及び熱
膨張係数を測定し九結果を表に示す。"Example" Alumina, silicic anhydride, magnesium oxide, calcium carbonate, titanium dioxide, boron oxide, lithium metasilicate, fluoride, and celsian were blended so as to have the composition shown in the table after firing, and fMil1 compound with Hydroxoglobyl cellulose (Nippon Soda (Riki made 1 knee NPC)
Add -8L) After passing through
Sintered bodies 1 to 80 were manufactured by molding at a pressure of 1500 Kt/aa and sintering at the sintering temperature shown in the figure. The bending strength, dielectric constant, and coefficient of thermal expansion of the sintered bodies 1 to -80 were measured, and the results are shown in the table.
表かられかるように本発明磁器組成物は、１０００℃以
下の焼結温度で得られ、しかも抗折強度２０ Ｏ０Ｋｇ
／ａｄ以上で誘電：率及び熱膨張係数の低いものである
。As can be seen from the table, the porcelain composition of the present invention can be obtained at a sintering temperature of 1000°C or less, and has a bending strength of 20 O0 kg.
/ad or more, the dielectric constant and coefficient of thermal expansion are low.
「発明の効果」 焼結温度が１０００℃以下であるから、Ａｇ 。"Effect of the invention" Ag because the sintering temperature is 1000°C or less.
Ａｕ ＋ Ｃｕ等の低抵抗導体材料を配線に用いて信号
伝播速度を上げることができる。誘電率が小さいから信
号伝播速度を上げることができる。Low resistance conductive materials such as Au + Cu can be used for wiring to increase signal propagation speed. Since the dielectric constant is small, the signal propagation speed can be increased.
熱膨張係数が小さいからシリコンチップの実装に有利で
ある。It has a small coefficient of thermal expansion, making it advantageous for mounting silicon chips.
特許出願人 日本特殊陶業株式会社 代表者 鈴 木 亭 −（、□− 一１．１Patent applicant: Nippon Tokushu Tokugyo Co., Ltd. Representative Suzuki Tei -(,□- 1.1
Claims (2)
ａ及びＳｒのうちから選ばれる一種以上の元素のフッ化
物１〜１２％、Ａｌ＿２Ｏ＿３１〜２０％、ＳｉＯ＿２
１４〜５０％、ＣａＯ３〜１８％、Ｂ＿２Ｏ＿３１〜８
％並びにセルジアン１０〜８０％よりなることを特徴と
する低温焼成磁器組成物。(1) On a weight basis, Ca, Mg, Li, Al, Mn, B
1-12% fluoride of one or more elements selected from a and Sr, Al_2O_31-20%, SiO_2
14-50%, CaO3-18%, B_2O_31-8
% and 10 to 80% Cergian.
下及びＬｉ＿２Ｏ２％以下のうちから選ばれる一種以上
、Ｃａ、Ｍｇ、Ｌｉ、Ａｌ、Ｍｎ、Ｂａ及びＳｒのうち
から選ばれる一種以上の元素のフッ化物１〜１２％、Ａ
ｌ＿２Ｏ＿３１〜２０％、ＳｉＯ＿２１４〜５０％、Ｃ
ａＯ３〜１８％、Ｂ＿２Ｏ＿３１〜８％並びにセルジア
ン１０〜８０％よりなることを特徴とする低温焼成磁器
組成物。(2) One or more elements selected from MgO 5% or less, TiO_25% or less, and Li_2O2% or less, and one or more elements selected from Ca, Mg, Li, Al, Mn, Ba, and Sr, on a weight basis. Compound 1-12%, A
l_2O_31-20%, SiO_214-50%, C
A low-temperature fired porcelain composition characterized by comprising 3 to 18% aO, 31 to 8% B_2O_3 and 10 to 80% Celsian.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60246627A JPS62105951A (en) | 1985-11-02 | 1985-11-02 | Low temperature burn ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60246627A JPS62105951A (en) | 1985-11-02 | 1985-11-02 | Low temperature burn ceramic composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62105951A true JPS62105951A (en) | 1987-05-16 |
| JPH0421630B2 JPH0421630B2 (en) | 1992-04-13 |
Family
ID=17151213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60246627A Granted JPS62105951A (en) | 1985-11-02 | 1985-11-02 | Low temperature burn ceramic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62105951A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5390906A (en) * | 1992-03-07 | 1995-02-21 | Mita Industrial Co., Ltd. | Paper supplying device |
| JP2010111551A (en) * | 2008-11-08 | 2010-05-20 | Sumitomo Chemical Co Ltd | Method for manufacturing aluminum titanate-based ceramic |
-
1985
- 1985-11-02 JP JP60246627A patent/JPS62105951A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5390906A (en) * | 1992-03-07 | 1995-02-21 | Mita Industrial Co., Ltd. | Paper supplying device |
| JP2010111551A (en) * | 2008-11-08 | 2010-05-20 | Sumitomo Chemical Co Ltd | Method for manufacturing aluminum titanate-based ceramic |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0421630B2 (en) | 1992-04-13 |
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