JPS62104588U - - Google Patents
Info
- Publication number
- JPS62104588U JPS62104588U JP19629885U JP19629885U JPS62104588U JP S62104588 U JPS62104588 U JP S62104588U JP 19629885 U JP19629885 U JP 19629885U JP 19629885 U JP19629885 U JP 19629885U JP S62104588 U JPS62104588 U JP S62104588U
- Authority
- JP
- Japan
- Prior art keywords
- switch element
- semiconductor switch
- winding
- bias current
- pulse transformer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000009413 insulation Methods 0.000 claims description 3
- 238000004804 winding Methods 0.000 claims 8
- 238000010586 diagram Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Landscapes
- Dc-Dc Converters (AREA)
- Electronic Switches (AREA)
Description
第１図は本考案の実施例を示す回路図であり、
第２図は第１図に示す実施例回路における各部の
動作を示すタイムチヤート、第３図は本発明の第
２の実施例を示す回路図である。第４図は２石式
ＤＣ／ＤＣコンバータの従来例を示す回路図であ
り、第５図は第４図に示す従来列回路での各部の
動作を示すタイムチヤートである。
２……直流電源、３Ｐ……半導体スイツチ素子
、としての正極側トランジスタ、３Ｎ……半導体
スイツチ素子としての負極側トランジスタ、４Ｐ
，４Ｎ……フリーホイールダイオード、５……変
圧器、６……出力ダイオード、７……出力コンデ
ンサ、８……負荷、９Ｐ……半導体スイツチ素子
としての正極側ＭＯＳ，ＦＥＴ、９Ｎ……半導体
スイツチ素子としての負極側ＭＯＳ，ＦＥＴ、１
０Ｐ……逆電圧保護ダイオード、１１……制御電
源、１２……順バイアストランジスタ、１３……
逆バイアストランジスタ、１４……順バイアス変
圧器、１５……逆バイアス変圧器、１６……順バ
イアスダイオード、１７……逆バイアスダイオー
ド、２１……制御スイツチ素子としての制御トラ
ンジスタ、２２……補助トランジスタ、２３……
パルス変圧器、２４……短絡用半導体スイツチ素
子としての、あるいは絶縁信号供給手段としての
ホトカプラ、２５……限流抵抗、２６……阻止ダ
イオード、２７……ダイオード、２８……ツエナ
ダイオード、２９……抵抗。
FIG. 1 is a circuit diagram showing an embodiment of the present invention,
FIG. 2 is a time chart showing the operation of each part in the embodiment circuit shown in FIG. 1, and FIG. 3 is a circuit diagram showing a second embodiment of the present invention. FIG. 4 is a circuit diagram showing a conventional example of a two-stone DC/DC converter, and FIG. 5 is a time chart showing the operation of each part in the conventional column circuit shown in FIG. 2...DC power supply, 3P...Positive side transistor as a semiconductor switch element, 3N...Negative side transistor as a semiconductor switch element, 4P
, 4N...Freewheel diode, 5...Transformer, 6...Output diode, 7...Output capacitor, 8...Load, 9P...Positive side MOS, FET as a semiconductor switch element, 9N...Semiconductor switch Negative side MOS, FET, 1 as an element
0P... Reverse voltage protection diode, 11... Control power supply, 12... Forward bias transistor, 13...
Reverse bias transistor, 14...Forward bias transformer, 15...Reverse bias transformer, 16...Forward bias diode, 17...Reverse bias diode, 21...Control transistor as control switch element, 22...Auxiliary transistor , 23...
Pulse transformer, 24... Photocoupler as short circuit semiconductor switch element or as insulation signal supply means, 25... Current limiting resistor, 26... Blocking diode, 27... Diode, 28... Zener diode, 29... …resistance.
Claims (1)
介して直流電源を接続し、該半導体スイツチ素子
に順バイアス電流と逆バイアス電流とを交互に繰
返し与えて当該半導体スイツチ素子がオン・オフ
動作を繰返すことにより前記変圧器の２次巻線か
ら変換された直流電力をとり出すようにしている
ＤＣ／ＤＣコンバータにおいて、第２の巻線を制
御電源に接続し、この第１巻線とは絶縁された第
２の巻線を前記半導体スイツチ素子に接続して、
この第２巻線に誘起される電圧の極性に対応して
順バイアス電流または逆バイアス電流を当該半導
体スイツチ素子に供給するパルス変圧器と、この
パルス変圧器の第１巻線に流れる電流を開閉する
制御スイツチ素子と、このパルス変圧器の第２巻
線に順バイアス電流を通流できる極性で並列接続
されている短絡用半導体スイツチ素子と、この短
絡用半導体スイツチ素子に絶縁された動作信号を
供給する絶縁信号供給手段とを備えていることを
特徴とするＤＣ／ＤＣコンバータの駆動回路。 (2) 特許請求の範囲第１項記載の駆動回路にお
いて、前記絶縁信号供給手段は、パルス変圧器が
逆バイアス電流を供給するときに前記短絡用半導
体スイツチ素子にオン信号を与える絶縁信号供給
手段であることを特徴とするＤＣ／ＤＣコンバー
タの駆動回路。[Claims for Utility Model Registration] (1) A DC power supply is connected to the primary winding of a transformer via a semiconductor switch element, and a forward bias current and a reverse bias current are alternately and repeatedly applied to the semiconductor switch element. In a DC/DC converter in which the semiconductor switch element repeatedly turns on and off to extract converted DC power from the secondary winding of the transformer, the second winding is connected to a control power source. A second winding insulated from the first winding is connected to the semiconductor switch element,
A pulse transformer that supplies a forward bias current or a reverse bias current to the semiconductor switch element in accordance with the polarity of the voltage induced in the second winding, and a current that flows through the first winding of the pulse transformer. A control switch element for controlling a pulse transformer, a short-circuit semiconductor switch element connected in parallel with a polarity that allows a forward bias current to pass through the second winding of the pulse transformer, and an insulated operating signal to the short-circuit semiconductor switch element. 1. A drive circuit for a DC/DC converter, comprising: an insulated signal supply means for supplying an insulated signal. (2) In the drive circuit according to claim 1, the insulation signal supply means is an insulation signal supply means for supplying an ON signal to the shorting semiconductor switch element when the pulse transformer supplies a reverse bias current. A drive circuit for a DC/DC converter, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19629885U JPS62104588U (en) | 1985-12-20 | 1985-12-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19629885U JPS62104588U (en) | 1985-12-20 | 1985-12-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62104588U true JPS62104588U (en) | 1987-07-03 |
Family
ID=31154990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19629885U Pending JPS62104588U (en) | 1985-12-20 | 1985-12-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62104588U (en) |
-
1985
- 1985-12-20 JP JP19629885U patent/JPS62104588U/ja active Pending