JPS62102160U - - Google Patents
Info
- Publication number
- JPS62102160U JPS62102160U JP19494385U JP19494385U JPS62102160U JP S62102160 U JPS62102160 U JP S62102160U JP 19494385 U JP19494385 U JP 19494385U JP 19494385 U JP19494385 U JP 19494385U JP S62102160 U JPS62102160 U JP S62102160U
- Authority
- JP
- Japan
- Prior art keywords
- region
- island
- isfet
- silicon layer
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985194943U JPH0725688Y2 (ja) | 1985-12-18 | 1985-12-18 | 半導体イオンセンサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985194943U JPH0725688Y2 (ja) | 1985-12-18 | 1985-12-18 | 半導体イオンセンサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62102160U true JPS62102160U (US06373033-20020416-M00071.png) | 1987-06-29 |
| JPH0725688Y2 JPH0725688Y2 (ja) | 1995-06-07 |
Family
ID=31152383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985194943U Expired - Lifetime JPH0725688Y2 (ja) | 1985-12-18 | 1985-12-18 | 半導体イオンセンサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0725688Y2 (US06373033-20020416-M00071.png) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5676042A (en) * | 1979-11-28 | 1981-06-23 | Shindengen Electric Mfg Co Ltd | Field effect transistor for ion sensor |
| JPS59100851A (ja) * | 1982-12-02 | 1984-06-11 | Nec Corp | 半導体イオンセンサ |
| JPS59206756A (ja) * | 1983-05-11 | 1984-11-22 | Hitachi Ltd | 参照電極を一体化したｆｅｔ化学センサ− |
| JPS59225344A (ja) * | 1983-06-06 | 1984-12-18 | Sanken Electric Co Ltd | イオンセンサ−用絶縁ゲ−ト電界効果トランジスタ |
-
1985
- 1985-12-18 JP JP1985194943U patent/JPH0725688Y2/ja not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5676042A (en) * | 1979-11-28 | 1981-06-23 | Shindengen Electric Mfg Co Ltd | Field effect transistor for ion sensor |
| JPS59100851A (ja) * | 1982-12-02 | 1984-06-11 | Nec Corp | 半導体イオンセンサ |
| JPS59206756A (ja) * | 1983-05-11 | 1984-11-22 | Hitachi Ltd | 参照電極を一体化したｆｅｔ化学センサ− |
| JPS59225344A (ja) * | 1983-06-06 | 1984-12-18 | Sanken Electric Co Ltd | イオンセンサ−用絶縁ゲ−ト電界効果トランジスタ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0725688Y2 (ja) | 1995-06-07 |
