JPS6210037B2 - - Google Patents
Info
- Publication number
- JPS6210037B2 JPS6210037B2 JP54048463A JP4846379A JPS6210037B2 JP S6210037 B2 JPS6210037 B2 JP S6210037B2 JP 54048463 A JP54048463 A JP 54048463A JP 4846379 A JP4846379 A JP 4846379A JP S6210037 B2 JPS6210037 B2 JP S6210037B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- substrate
- layer
- silicon layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 description 17
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 9
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 7
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000011856 silicon-based particle Substances 0.000 description 3
- 239000011863 silicon-based powder Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
本発明は光起電力素子、特に太陽電池として使
用するのに適した光起電力素子に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photovoltaic device, particularly a photovoltaic device suitable for use as a solar cell.
これまで実用化されている光起電力素子として
シリコン単結晶のpn接合を用いた素子がある。
ところが、これは単結晶を使用しているため高価
であり、また、その面積や形状が限定されるとい
う欠点があつた。 Photovoltaic devices that have been put into practical use so far include devices that use pn junctions of silicon single crystals.
However, since this uses a single crystal, it is expensive and has the disadvantage that its area and shape are limited.
最近、低価格で大面積の太陽電池の開発を目的
として、各種の半導体薄膜を基体とする光起電力
素子の研究開発が行われている。これらはいずれ
も光電変換要素をすべて気相反応法、気相成長
法、真空蒸着法などの高度で複雑な技術力を要す
る方法で構成しようとするものであり、しかもそ
の実施に精密で高価な装置を必要とするため、現
状では安価な太陽電池を製造することが困難であ
つた。また、その変換効率も比較的低いものであ
つた。 Recently, with the aim of developing low-cost, large-area solar cells, research and development has been carried out on photovoltaic elements based on various semiconductor thin films. All of these methods attempt to construct photoelectric conversion elements using methods that require advanced and complex technology, such as vapor phase reaction method, vapor phase growth method, and vacuum evaporation method. Currently, it is difficult to manufacture inexpensive solar cells because of the equipment required. Moreover, the conversion efficiency was also relatively low.
本発明にかかる光起電力素子は、その構成要素
の一つにシリコン焼結膜を使用し、それとpn接
合を形成する層を接触させて構成しているもので
あり、寸法、形状についての制約をなくし、製造
技術、製造設備上の問題点を解決したものであ
る。これによれば高性能で、しかも寿命特性の良
好な光起電力素子を安価に得ることができる。 The photovoltaic element according to the present invention uses a silicon sintered film as one of its constituent elements, and is constructed by contacting the film with a layer forming a pn junction, and is therefore free from restrictions regarding size and shape. This eliminates the problems associated with manufacturing technology and manufacturing equipment. According to this, a photovoltaic element with high performance and good lifetime characteristics can be obtained at low cost.
以下、本発明の光起電力素子について実施例を
あげて説明する。 Hereinafter, the photovoltaic device of the present invention will be described with reference to Examples.
〔実施例 １〕
シリコン粉末に結着剤としてプロピレングリコ
ールを加えて泥状にしたものを、第１図に示すよ
うに、グラフアイト基板１上にスクリーン印刷し
たのち、不活性雰囲気中において1000〜1300℃の
範囲内の温度で焼成して、シリコン焼結膜２を形
成させた。この際、グラフアイト基板１とシリコ
ン焼結膜２との間にシリコンカーバイト薄層３が
介在するよう、表面にシリコンカーバイト薄層３
を有するグラフアイト基板１を使用した。このの
ち、シリコン焼結膜２上に硫化カドミウム膜４を
真空蒸着法で形成させたのち、グラフアイト基板
１と硫化カドミウム膜４上にそれぞれの電極５，
６を付け、さらに、リード線７，７′を電極５，
６にそれぞれ接続した。光８の照射面は硫化カド
ミウム膜４側とする。[Example 1] A slurry made by adding propylene glycol as a binder to silicon powder was screen printed on a graphite substrate 1 as shown in FIG. The silicon sintered film 2 was formed by firing at a temperature within the range of 1300°C. At this time, the silicon carbide thin layer 3 is placed on the surface so that the silicon carbide thin layer 3 is interposed between the graphite substrate 1 and the silicon sintered film 2.
A graphite substrate 1 having the following was used. After that, a cadmium sulfide film 4 is formed on the silicon sintered film 2 by vacuum evaporation, and then electrodes 5,
6, and then connect the lead wires 7, 7' to the electrodes 5,
6, respectively. The surface irradiated with the light 8 is the cadmium sulfide film 4 side.
このようにして得られた光起電力素子は直射日
光下で、変換効率が2.6％の特性を示した。 The photovoltaic device thus obtained exhibited a conversion efficiency of 2.6% under direct sunlight.
〔実施例 ２〕
シリコン粉末に結着剤としてプロピレングリコ
ールを加えて泥状にしたものを、第２図に示すよ
うに、ガラス基板９の表面に形成した酸化第二錫
１０上にスクリーン印刷して、シリコン層１１を
形成させた。次に、これをシラン（SiH4）のグロ
ー放電中で、250゜〜300℃程度に加熱することに
より、シリコン層１１のシリコン粒子間の境界な
らびに酸化第二錫膜１０とシリコン層１１との境
界部分にシリコンのアモルフアス層１２が形成さ
れる。このアモルフアスシリコン層１２はここで
はシリコン層１１内のシリコン粒子間ならびにシ
リコン層１１と酸化第二錫膜１０間の結着剤の役
割もはたしている。こののち、シリコン層１１上
と酸化第二錫層１０上にそれぞれの電極１３，１
４を付け、さらにリード線１５，１５′を引き出
しておく。光１６の照射面はガラス基板側であ
る。シリコン層１１の厚さは10〜20μｍ程度であ
るが、アモルフアスシリコン層１２の吸収係数が
大きいので、入射光１６のほとんど全てがこれら
のシリコン層１１，１２内で吸収され尽し、この
結果、高性能のSnO2／Si系光起電力素子が得ら
れる。[Example 2] A slurry made by adding propylene glycol as a binder to silicon powder was screen printed on the stannic oxide 10 formed on the surface of the glass substrate 9, as shown in FIG. Then, a silicon layer 11 was formed. Next, this is heated to about 250° to 300°C in a glow discharge of silane (SiH 4 ), thereby removing the boundaries between the silicon particles of the silicon layer 11 and the boundaries between the stannic oxide film 10 and the silicon layer 11. An amorphous silicon layer 12 is formed at the boundary. This amorphous silicon layer 12 here also serves as a binder between silicon particles in the silicon layer 11 and between the silicon layer 11 and the stannic oxide film 10. After this, electrodes 13 and 1 are placed on the silicon layer 11 and the tin oxide layer 10, respectively.
4 and then pull out the lead wires 15 and 15'. The surface irradiated with the light 16 is the glass substrate side. The thickness of the silicon layer 11 is about 10 to 20 μm, but since the absorption coefficient of the amorphous silicon layer 12 is large, almost all of the incident light 16 is absorbed within these silicon layers 11 and 12, and as a result, , a high-performance SnO 2 /Si-based photovoltaic device can be obtained.
このようにして得られた光起電力素子は、直射
日光下で、開放端電圧が0.55V、短絡電流が
28mA／cm2、変換効率が7.3％の特性を示した。 The thus obtained photovoltaic device has an open circuit voltage of 0.55V and a short circuit current under direct sunlight.
It exhibited characteristics of 28 mA/cm 2 and conversion efficiency of 7.3%.
〔実施例 ３〕
シリコン粉末に結着剤としてプロピレングリコ
ールを加えて泥状にしたものを、第３図に示すよ
うに、金メツキしたステンレス鋼基板１７上にス
クリーン印刷してシリコン層１８を形成させた。
次に、これをシラン（SiH4）のグロー放電中で、
400℃程度に加熱することにより、シリコン層１
８のシリコン粒子間の境界部分にアモルフアスシ
リコン層１９が形成されると同時に、基板１７と
シリコン層１８の境界部分にシリコンと金との固
溶体層２０が形成され、シリコン層１８と基板１
７が強固に結着する。これらのシリコン層１８，
１９上に硫化カドミウム膜２１を真空蒸着法で形
成させたのち、基板１７と硫化カドミウム膜２１
上にそれぞれの電極２２，２３を付け、さらに、
リード線２４，２４′を引き出しておく。光２５
の照射面は硫化カドミウム膜２１側とする。[Example 3] A silicone layer 18 is formed by screen printing a slurry made by adding propylene glycol as a binder to silicon powder on a gold-plated stainless steel substrate 17, as shown in FIG. I let it happen.
Next, this is carried out in a glow discharge of silane (SiH 4 ).
By heating to about 400℃, silicon layer 1
At the same time, a solid solution layer 20 of silicon and gold is formed at the boundary between the substrate 17 and the silicon layer 18, and the silicon layer 18 and the substrate 1
7 is strongly bound. These silicon layers 18,
After forming a cadmium sulfide film 21 on the substrate 19 by vacuum evaporation, the substrate 17 and the cadmium sulfide film 21 are
The respective electrodes 22 and 23 are attached on top, and further,
Pull out the lead wires 24, 24'. light 25
The irradiated surface is the cadmium sulfide film 21 side.
このようにして得られた光起電力素子は、直射
日光下で、開放端電圧が0.5V，短絡電流が
23mA／cm2，変換効率が6.5％の特性を示した。 The photovoltaic device obtained in this way has an open circuit voltage of 0.5V and a short circuit current under direct sunlight.
It exhibited characteristics of 23mA/cm 2 and conversion efficiency of 6.5%.
以上説明したように、本発明によれば、シリコ
ン焼結膜を使用することにより、安価で高性能の
光起電力素子を容易に得ることができる。また、
シリコン粒子同士をアモルフアシリコン層で結着
した構成の素子においては、実施例からも明らか
なように、低い温度でシリコン焼結膜を形成する
ことができるという利点がある。 As explained above, according to the present invention, by using a silicon sintered film, an inexpensive and high-performance photovoltaic element can be easily obtained. Also,
An element having a structure in which silicon particles are bound to each other by an amorphous silicon layer has the advantage that a silicon sintered film can be formed at a low temperature, as is clear from the examples.
第１図、第２図および第３図はそれぞれ本発明
にかかる光起電力素子の実施例を説明するための
断面図である。
１……グラフアイト基板、２……シリコン焼結
膜、３……シリコンカーバイト薄層、４……硫化
カドミウム、５……電極、６……電極、７，７′
……リード線、８……入射光、９……ガラス基
板、１０……酸化第二錫膜、１１……シリコン
層、１２……アモルフアスシリコン層、１３……
電極、１４……電極、１５，１５′……リード
線、１６……入射光、１７……金メツキしたステ
ンレス鋼板、１８……シリコン層、１９……アモ
ルフアスシリコン層、２０……シリコン―金合金
層、２１……硫化カドミウム膜、２２……電極、
２３……電極、２４，２４′……リード線、２５
……入射光。
FIG. 1, FIG. 2, and FIG. 3 are sectional views for explaining embodiments of the photovoltaic device according to the present invention, respectively. DESCRIPTION OF SYMBOLS 1...Graphite substrate, 2...Silicon sintered film, 3...Silicon carbide thin layer, 4...Cadmium sulfide, 5...Electrode, 6...Electrode, 7, 7'
...Lead wire, 8...Incoming light, 9...Glass substrate, 10...Stannic oxide film, 11...Silicon layer, 12...Amorphous silicon layer, 13...
Electrode, 14... Electrode, 15, 15'... Lead wire, 16... Incident light, 17... Gold-plated stainless steel plate, 18... Silicon layer, 19... Amorphous silicon layer, 20... Silicon- gold alloy layer, 21... cadmium sulfide film, 22... electrode,
23... Electrode, 24, 24'... Lead wire, 25
...Incoming light.
Claims (1)
いるシリコン焼結膜の一方の面側に前記シリコン
焼結膜とpn接合を形成する層が設けられてお
り、これらが基板上に保持されていることを特徴
とする光起電力素子。 ２ シリコン焼結膜が透明電極を有するガラス基
板の前記透明電極側に形成されており、前記ガラ
ス基板側を光照射面とすることを特徴とする特許
請求の範囲第１項に記載の光起電力素子。 ３ 基板が導電性基板であることを特徴とする特
許請求の範囲第１項記載の光起電力素子。[Claims] 1. A layer forming a p-n junction with the silicon sintered film is provided on one side of the silicon sintered film in which an amorphous silicon layer is formed at the grain boundaries, and these layers are formed on the substrate. A photovoltaic element characterized by being held. 2. The photovoltaic force according to claim 1, wherein a silicon sintered film is formed on the transparent electrode side of a glass substrate having a transparent electrode, and the glass substrate side is the light irradiation surface. element. 3. The photovoltaic device according to claim 1, wherein the substrate is a conductive substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4846379A JPS55140276A (en) | 1979-04-18 | 1979-04-18 | Photovoltaic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4846379A JPS55140276A (en) | 1979-04-18 | 1979-04-18 | Photovoltaic element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55140276A JPS55140276A (en) | 1980-11-01 |
| JPS6210037B2 true JPS6210037B2 (en) | 1987-03-04 |
Family
ID=12804056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4846379A Granted JPS55140276A (en) | 1979-04-18 | 1979-04-18 | Photovoltaic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55140276A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2944142B1 (en) * | 2009-04-02 | 2011-06-03 | Tile S | ELECTRONIC STRUCTURE WITH EPITAXED LAYER ON SILICON FRITTE |
| CN102751364B (en) * | 2012-07-07 | 2015-12-02 | 蚌埠玻璃工业设计研究院 | A kind of photovoltaic cell condensing glass ball plate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5245868A (en) * | 1975-10-08 | 1977-04-11 | Agency Of Ind Science & Technol | Process for production of plate-from silicone |
-
1979
- 1979-04-18 JP JP4846379A patent/JPS55140276A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5245868A (en) * | 1975-10-08 | 1977-04-11 | Agency Of Ind Science & Technol | Process for production of plate-from silicone |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55140276A (en) | 1980-11-01 |
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