JPS6196763A - Controlling circuit for semiconductor element - Google Patents
Controlling circuit for semiconductor elementInfo
- Publication number
- JPS6196763A JPS6196763A JP59217573A JP21757384A JPS6196763A JP S6196763 A JPS6196763 A JP S6196763A JP 59217573 A JP59217573 A JP 59217573A JP 21757384 A JP21757384 A JP 21757384A JP S6196763 A JPS6196763 A JP S6196763A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- transistor
- main
- main transistor
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 230000005611 electricity Effects 0.000 claims abstract description 5
- 230000001419 dependent effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 241000951471 Citrus junos Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000032696 parturition Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Control Of Electrical Variables (AREA)
- Electronic Switches (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
この発明はサイリスタ、トランジスタなどの可制御半導
体素子を制御（ＯＮ−ＯＦＦ動作、増幅など）する回路
であって、かつ制御される半導体素子の主回路側と制岬
回路側が電気的に絶縁されなければならない場合（イン
バータ回路等）における制御回路に関する。[Detailed description of the invention] [Technical field to which the invention pertains] The present invention relates to a circuit for controlling (ON-OFF operation, amplification, etc.) a controllable semiconductor element such as a thyristor or a transistor, and for controlling a controllable semiconductor element such as a thyristor or a transistor. This invention relates to a control circuit in cases where the main circuit side and the control circuit side must be electrically isolated (such as an inverter circuit).
以下各図において同一の符号は同−又は相当部分を示す
。第４図、第５図はこの柚の従来回路である。In the following figures, the same reference numerals indicate the same or corresponding parts. Figures 4 and 5 show the conventional circuit of this Yuzu.
第４図においてＴｒ、は主回路を開閉する可制御半導体
素子としての電界効果トランジスタ（以下ＦＩＴという
）などの主トランジスタ、Ｋはその制御回路、ＰＣは制
御回路に内において、主回路と制御信号回路（後述のホ
トダイオードＰＤの回路）とを絶縁し、主トランジスタ
Ｔｒ１の開閉を制御するホトカプラ、ＰＤは該ホトカプ
ラＰＣ内の光
発電ダイオード、ＰＴは同じくホトトランジスタである
。Ｖｃｃは制御回路に内の制御電源、Ｒ１゜Ｒ２は同じ
く抵抗である。In Fig. 4, Tr is a main transistor such as a field effect transistor (hereinafter referred to as FIT) as a controllable semiconductor element that opens and closes the main circuit, K is its control circuit, and PC is the control circuit. A photocoupler is insulated from a circuit (a photodiode PD circuit described below) and controls opening and closing of the main transistor Tr1. PD is a photovoltaic diode in the photocoupler PC, and PT is also a phototransistor. Vcc is a control power supply in the control circuit, and R1 and R2 are resistors.
この制御回路にでは発光ダイオードＦＤに電源が流れる
とホトトランジスタがＯＮし、制御電源Ｖｃｃから抵抗
Ｒ１，ホトトランジスタＦＴ、抵抗Ｒ１２を介して主ト
ランジスタＴｒ１のゲートＧ。In this control circuit, when power flows to the light emitting diode FD, the phototransistor is turned on, and the gate G of the main transistor Tr1 is connected from the control power supply Vcc through the resistor R1, the phototransistor FT, and the resistor R12.
ソースＳ間に主トランジスタＴｒ１をＯＮし得る閾値以
上の電圧が与えられ、ＴｒｌはＯＮ状態となる。A voltage equal to or higher than a threshold that can turn on the main transistor Tr1 is applied between the source S, and Tr1 is turned on.
発行ダイオードＰＤの電流が断たれると、ホトトランジ
スタＰＴはＯＦＦするため、主トランジスタＴ％、のゲ
ートＧ、ソースＳ間の電圧はＯとなり、Ｔｒ、はＯＦＦ
状態になる。When the current of the issuing diode PD is cut off, the phototransistor PT is turned off, so the voltage between the gate G and source S of the main transistor T becomes O, and Tr is turned off.
become a state.
このように第４図の回路では主トランジスタＴｒ１のド
レインＤ、ソースＳの接続される図外の主回路内の主電
源Ｖ。とは別に、主トランジスタＴｒ、のゲートＧ、ソ
ースＳ間に制御用の電圧を供給する制御電源Ｖｃｃが設
けられているが、一般の主トランジスタＴｒ１の制御に
おいては、この電源Ｖｃｃは主４源■。とは電位的に無
関係な（すなわち絶縁された）独立電源とする必要があ
る。In this way, in the circuit of FIG. 4, the main power supply V in the main circuit (not shown) is connected to the drain D and source S of the main transistor Tr1. Separately, a control power supply Vcc is provided that supplies a control voltage between the gate G and source S of the main transistor Tr, but in controlling the general main transistor Tr1, this power supply Vcc is connected to the four main sources. ■. It is necessary to use an independent power supply that is electrically unrelated (that is, isolated) from the
第５図はこのような回路４！＃列を示し、主電源Ｖ。Figure 5 shows such a circuit 4! # indicates column, main power supply V.
から単相インバータ結綜の４つの主トランジスタＴｒ＋
（Ｔｒｌｌ〜”１４ ）を介してモータＭに単相の可
変の交ｌｊｆ′を電圧を与えてモータＭを制御する回路
である。なおり１〜Ｄ４は転流ダイオード、Ｋは第４図
と同様な、各主トランジスタＴｒ、、〜ＴｒＩ４に対応
する制御ａｍである。Four main transistors Tr+ of single-phase inverter combination
This is a circuit that controls the motor M by applying a single-phase variable alternating current ljf' to the motor M via (Trll~"14). Note that 1 to D4 are commutating diodes, and K is the one shown in Fig. 4. Similarly, the control am corresponds to each main transistor Tr, . . . -TrI4.
この′回路においては主トランジスタＴｒ、 、Ｔｒ、
。In this 'circuit, the main transistors Tr, , Tr,
.
のソースＳの電位は主成Ｗ Ｖｏの負極の電位に等しい
が、主トランジスタＴｒ１１．Ｔｒｌ、のソースＳの電
、 位は各主トランジスタＴｒ、、−Ｔｒ、４の開
閉動作ｉこ伴って、主電源Ｖ。のほぼ正極から負極まで
の１位間を往復変動する。従って第５図ではコスト上、
制御回路にの構成を共通とした標準回路を用いた場合に
は独立の制御電源Ｖｃｃが４個必要となり、また仮に主
トランジスタＴｒ１２ ＋ Ｔｒ１４の２つの制御電源
のみは共通とし、独立′電源又は主電源ｖｏを流用した
ものとしたとしても２〜３個の制御−を源Ｖｃｃが必要
となる。なおこのようなインバータ回路は３相結線で用
いられるのが一般であり必要な制御電源は３〜６個とな
る。このように従来の制御回路は多数の独立の制御電源
を必要とする欠点がある。The potential of the source S of the main transistor Tr11. is equal to the potential of the negative electrode of the main transistor WVo. The electric potential of the source S of Trl is changed to the main power supply V due to the opening/closing operation of each main transistor Tr, -Tr, 4. It fluctuates back and forth between approximately 1 position from the positive pole to the negative pole. Therefore, in Figure 5, in terms of cost,
If a standard circuit with a common configuration is used for the control circuit, four independent control power supplies Vcc will be required, and if only the two control power supplies of main transistors Tr12 + Tr14 are common, and an independent power supply or main Even if the power source vo is used, two to three control sources Vcc are required. Note that such an inverter circuit is generally used in a three-phase connection, and three to six control power supplies are required. Thus, conventional control circuits have the disadvantage of requiring multiple independent control power supplies.
［°発明の目的〕
本発明は前記の欠点を除き、主回路の負荷を制御する複
数の可制御半導体素子の制御回路用の独立電源を除去も
しくは削減又はその容量を小形化し得る制御回路を提供
することを目的とする。[°Object of the Invention] The present invention eliminates the above-mentioned drawbacks and provides a control circuit that can eliminate or reduce the independent power supply for the control circuit of a plurality of controllable semiconductor elements that control the load of the main circuit, or reduce its capacity. The purpose is to
本発明の要点は、第３図のように光を受けて自から発電
する光発電素子（例えば太陽電池）ＤＯを前記の可制御
半導体素子の制御端子間（同図では主トランジスタＴｒ
、のゲートＧ、ソースＳ間）に接続することにより、入
力制御信号量である光量に依存した動作を可制御半導体
素子（主トランジスタＴｒ、）に行イつせるようにした
点、つまり、第３図の光発電素子ＤＯで第４図の制御電
源ＶｃｃとホトカプラＰＣを置換え、電源Ｖｃｃを不要
としかつ制御回路の構成を簡単化し得るようにした点、
もしくは第１図のように光発電素子ＤＯでホトカプラＰ
Ｃ１内のホトトランジスタを置換え、第４図の電源Ｖｃ
ｃを不要とした点、又は第２図のように大容量の主トラ
ンジスタＴｒ、の制御回路内に光発電素子Ｄｏを用いる
ことにより、制御電源としてのＴｒ、ＯＮ用寛源Ｖｃｃ
ｌを小容量のものｌζし得るようにした点にある。The gist of the present invention is to connect a photovoltaic element (for example, a solar cell) DO that receives light and generates its own power as shown in FIG.
, between the gate G and the source S of the controllable semiconductor element (main transistor Tr,), which causes the controllable semiconductor element (main transistor Tr,) to perform an operation depending on the amount of light, which is the amount of input control signal. The control power source Vcc and photocoupler PC in FIG. 4 are replaced with the photovoltaic element DO in FIG. 3, thereby eliminating the need for the power source Vcc and simplifying the configuration of the control circuit.
Or, as shown in Figure 1, photocoupler P is used as photovoltaic element DO.
By replacing the phototransistor in C1, the power supply Vc in FIG.
By using the photovoltaic element Do in the control circuit of the large-capacity main transistor Tr as shown in FIG.
The point is that l can be made into a small capacity lζ.
換言要約すれば本発明の要点は、可制御半導体素子（１
’ＥＴ等の主トランジスタなど）の制御端子（ゲート・
、ソースなど）を駆動する回路（制御回路）内に光を受
けて発゛亀する素子（太陽電池など）を設けるようにし
た点にある。In other words, the main point of the present invention is to provide a controllable semiconductor element (1
Control terminal (gate, main transistor, etc.) of 'ET, etc.)
, source, etc.) is provided with an element (such as a solar cell) that emits light in response to light.
以下第１図、第２図に基づいて本発明のそれぞれ異なる
実施例を説明する。第１図においてＰＣｌは新たなホト
カプラであり、ＤＯはこのホトカプラＰＣ１内に設けら
れ、発光ダイオードＰＤから受光し発電する太陽電池な
どの光発電素子り。Hereinafter, different embodiments of the present invention will be explained based on FIGS. 1 and 2. In FIG. 1, PC1 is a new photocoupler, and DO is a photovoltaic element such as a solar cell that receives light from a light emitting diode PD and generates electricity.
である。この制御回路は第４図における制御電源Ｖｃｃ
とホトトランジスタＰＴを光発電素子ＤＯで置換えたも
のに相当し、制御回路の構成を極めて簡単化すると同時
に、第４図の場合と同様に発光ダイオードＰＤのＯＮ、
ＯＦＦ’（制御信号電流の有、無）に応じて主トランジ
スタＴｒ、をＯＮ。It is. This control circuit is connected to the control power supply Vcc in FIG.
This corresponds to replacing the phototransistor PT with a photovoltaic element DO, which greatly simplifies the configuration of the control circuit, and at the same time allows the light emitting diode PD to be turned on and off as in the case of Fig. 4.
OFF' (presence or absence of control signal current) turns on the main transistor Tr.
ＯＦＦすることができる。Can be turned off.
第２図は主トランジスタＴｒ１が大容量のため、その制
御回路に制御電源としてのＴｒ、ＯＮ用′底源Ｖｃｃｌ
を用いることとなった場合に、制御回路内の補助トラン
ジスタを光発電素子ＤＯで制御する例を示す。同図にお
いて主トランジスタＴｒ、はＰＥＴの補助トランジスタ
Ｔｒ、。をダーリントン接続で内蔵し、そのゲートＧを
高入力インピーダンスで駆動し得るよう構成されてい′
る。またＶｃｃ２はＴｒ、ＯＦＦ用電源で主トランジス
タＴｒ、のＯＮ→ＯＦ Ｆへの切換りを早める働きをす
るが、特に高速動作を必要としない場合には省略し、こ
の部分を短絡する形としてもよい。Ｔｒ２１〜Ｔｒ２３
はＦＥＴの補助トランジスタ、几１１〜Ｒ８１３は抵抗
、ＤＯは第１図とは逆極性に接続された光発電素子であ
る。In Figure 2, since the main transistor Tr1 has a large capacity, its control circuit includes a Tr as a control power supply, and a bottom source for ON, Vccl.
An example will be shown in which the auxiliary transistor in the control circuit is controlled by the photovoltaic element DO when it is decided to use the photovoltaic element DO. In the figure, the main transistor Tr is a PET auxiliary transistor Tr. is built-in with a Darlington connection, and its gate G is configured to be driven with high input impedance.
Ru. In addition, Vcc2 is the Tr, OFF power supply and functions to hasten the switching from ON to OFF of the main transistor Tr, but it can be omitted if high-speed operation is not required, and this part can be short-circuited. good. Tr21~Tr23
11 to R813 are resistors, and DO is a photovoltaic element connected with the opposite polarity to that in FIG. 1.
この回路の動作は、光が光発電素子−ＤＯに当っていな
い場合には、電源Ｖｃｃｌによって補助トランジスタＴ
ｈｓ＋ ＴｒＩ２のゲートＧの電位はソースＳの電位よ
り高くこれらのトランジスタの導通可能な閾値以上にあ
り、これらのトランジスタＴｒ、、。The operation of this circuit is such that when no light hits the photovoltaic element -DO, the auxiliary transistor T
The potential of the gate G of hs+ TrI2 is higher than the potential of the source S and is above the threshold value at which these transistors can conduct, and these transistors Tr, .
Ｔ ｒ２．はＯＮ、従って補助トランジスタＴ ｒ２．
のゲートＧの電位はそのソースＳの電位にほぼ等しくそ
の導通可能な閾値以下にあり、トランジスタＴｒ、、。T r2. is ON, so the auxiliary transistor T r2.
The potential of the gate G of the transistors Tr, .
はＯＦＦ、又これにより主トランジスタＴｒ、 （内の
補助トランジスタＴｒ２゜）のゲートＧの゛電位は、該
トランジスタＴｒ、のエミッタＥのｒ４位に対し、ｋ
このトランジスタＴｒ、の導通可能な閾値以下にあり
、主トランジスタＴｒ１はＯＦＦ状態にある。is OFF, and as a result, the potential of the gate G of the main transistor Tr (inside the auxiliary transistor Tr2) becomes k with respect to the r4 position of the emitter E of the transistor Tr.
This is below the threshold value at which this transistor Tr can conduct, and the main transistor Tr1 is in an OFF state.
次に光発電素子Ｄｏに光が当ったときは士、−の極性で
示されるその発・邂々圧で、補助トランジスタＴｒ！３
． Ｔｒ２．のゲートＧの電位は、それらのソースＳの
電位を下回り、トランジスタＴ ｒｔ３ 、 Ｔ ｒ２
２はＯＦＦとなる。従って補助トランジスタＴｒＨのゲ
ートＧの電位は電源Ｖｃｃ１の正極電位近くにまで高め
られる。他方補助トランジスタＴｒ、、のソースＳの４
位（これは同時に補助トランジスタＴｒ、。のゲートＧ
の電位に等しい）は、補助トランジスタＴｒ、１のゲー
トＧの前記電位と、主トランジスタＴｒ１のエミッタＥ
の電位との間を、はぼ各トランジスタＴｒ２． 、 Ｔ
ｒ、ｏの各ゲートカソード間域１ｉｑｊのインピーダン
スで分圧した電位となり、これにより各トランジスタＴ
ｒ２． 、 Ｔｒ、。のソースＳに対するゲートＧの電
位は何れも各トランジスタの導通可能な閾値以上となり
、各トランジスタ”２１＋Ｔｒ、。はＯＮ従って主トラ
ンジスタＴｒｌはＯＮ状態となる。この制御回路では光
発電素子Ｄｏを用いたことにより、Ｔｒ、ＯＮ用電源Ｖ
ｃｃｌは、ＦＥＴの補助トランジスタＴｒ、。〜Ｔｒ、
、を駆動するのみでよく、微小電流を供給するのみでよ
いので、小容量のもので足りることになる。また一本発
明は前述のトランジスタだけでなくサイリスタにおいて
もそのゲートカソード間に接続された点弧回路の駆動゛
９電源として太陽電池などの発電素子を接続した制御回
路とすることもできる。Next, when light hits the photovoltaic element Do, the auxiliary transistor Tr! 3
．． Tr2. The potential of the gates G of the transistors T rt3 , T r2 is lower than the potential of their sources S.
2 is OFF. Therefore, the potential of the gate G of the auxiliary transistor TrH is raised to near the positive potential of the power supply Vcc1. 4 of the sources S of the other auxiliary transistors Tr, .
(This is also the gate G of the auxiliary transistor Tr.
) is equal to the potential of the gate G of the auxiliary transistor Tr,1 and the emitter E of the main transistor Tr1.
The potential of each transistor Tr2. , T
The potential is divided by the impedance of the gate-cathode region 1iqj of r and o, and as a result, each transistor T
r2. , Tr. The potential of the gate G with respect to the source S of each transistor becomes equal to or higher than the conduction threshold of each transistor, and each transistor "21+Tr" is turned on, so that the main transistor Trl is turned on.In this control circuit, a photovoltaic element Do is used. By this, the Tr, ON power supply V
ccl is an auxiliary transistor Tr of the FET. ~Tr,
Since it is only necessary to drive , and only to supply a minute current, a small capacitance is sufficient. Furthermore, the present invention can also be applied to a control circuit in which a power generation element such as a solar cell is connected as a power source for an ignition circuit connected between the gate and cathode of a thyristor as well as the above-mentioned transistor.
以上の説明から明らかなように本発明によれば、光を受
けて発電する素子を用いて、主トランジスタを制御する
こととしたので、主トランジスタの制御回路内の絶縁さ
れ独立した・電源の削除もしくは削減又は小容量化がで
きる効果、及び入力制御信号に光を用いることで、絶縁
容易にでき、かつ第１図に示す新しいホトカプラＰＣＩ
を誕生させ得る効果をもつ。また本発明を用いれば、回
路が簡単になり、装置構成上、制御回路の専有面積を小
さくできる効果がある。As is clear from the above description, according to the present invention, the main transistor is controlled using an element that receives light and generates electricity, so an isolated and independent power supply in the control circuit of the main transistor is eliminated. Alternatively, the new photocoupler PCI, which can be easily insulated by reducing or reducing the capacitance and by using light for the input control signal, can be used as shown in Figure 1.
It has the effect of giving birth to Further, by using the present invention, the circuit becomes simple and the area occupied by the control circuit can be reduced in terms of device configuration.
第１図は本発明の１実施例の構成を示す回路図、第２図
は同じく他の実施例の構成を示す回路図、第３図は同じ
く原理回路の構成を示す図、第４図は＃キの翻１湘Ｈ鎮
の措膚儲１番云す回路同−筐５１媚は複数の可制御半導
体素子を用いた主回路構成例を示す回路図である。
Ｔｒ、−０、主トランジスタ、Ｔ ｒ、ｏ−ｗＴ ｒ２
３ ・・・補助トランジスタ、Ｄ′０・・光発電素子、
ＰＣＩ・・・ホトカブ ゛う、Ｆ Ｄ 、、、発光ダ
イオード、Ｖｃｃｌ−０，Ｔｒ、ＯＮ電源。
Ｚギ「人弁理十山口 貝
第５図FIG. 1 is a circuit diagram showing the configuration of one embodiment of the present invention, FIG. 2 is a circuit diagram showing the configuration of another embodiment, FIG. 3 is a diagram showing the basic circuit configuration, and FIG. 4 is a circuit diagram showing the configuration of another embodiment. #Ki's translation 1 Xiang H town's measurement circuit 1 ``Circuit 51'' is a circuit diagram showing an example of the main circuit configuration using a plurality of controllable semiconductor elements. Tr, -0, main transistor, Tr, o-wTr2
3... Auxiliary transistor, D'0... Photovoltaic element,
PCI...Photocube, FD, Light emitting diode, Vccl-0, Tr, ON power supply. Zgi “Jinbenbari Toyamaguchi Kai Figure 5
Claims (1)
光を受けて発電する素子を設けたことを特徴とする半導
体素子の制御回路。1) In the circuit that drives the control terminal of the controllable semiconductor element,
A control circuit for a semiconductor device, characterized in that it includes an element that receives light and generates electricity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59217573A JPS6196763A (en) | 1984-10-17 | 1984-10-17 | Controlling circuit for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59217573A JPS6196763A (en) | 1984-10-17 | 1984-10-17 | Controlling circuit for semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6196763A true JPS6196763A (en) | 1986-05-15 |
Family
ID=16706388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59217573A Pending JPS6196763A (en) | 1984-10-17 | 1984-10-17 | Controlling circuit for semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6196763A (en) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0729930U (en) * | 1991-04-30 | 1995-06-02 | トリニティ工業株式会社 | Semiconductor switch |
| US10010695B2 (en) | 2011-02-11 | 2018-07-03 | Batmark Limited | Inhaler component |
| US10045562B2 (en) | 2011-10-21 | 2018-08-14 | Batmark Limited | Inhaler component |
| US10543323B2 (en) | 2008-10-23 | 2020-01-28 | Batmark Limited | Inhaler |
| US10602777B2 (en) | 2014-07-25 | 2020-03-31 | Nicoventures Holdings Limited | Aerosol provision system |
| US10765147B2 (en) | 2014-04-28 | 2020-09-08 | Batmark Limited | Aerosol forming component |
| US10881138B2 (en) | 2012-04-23 | 2021-01-05 | British American Tobacco (Investments) Limited | Heating smokeable material |
| US11051551B2 (en) | 2011-09-06 | 2021-07-06 | Nicoventures Trading Limited | Heating smokable material |
| US11083856B2 (en) | 2014-12-11 | 2021-08-10 | Nicoventures Trading Limited | Aerosol provision systems |
| US11253671B2 (en) | 2011-07-27 | 2022-02-22 | Nicoventures Trading Limited | Inhaler component |
| US11272740B2 (en) | 2012-07-16 | 2022-03-15 | Nicoventures Holdings Limited | Electronic vapor provision device |
| US11659863B2 (en) | 2015-08-31 | 2023-05-30 | Nicoventures Trading Limited | Article for use with apparatus for heating smokable material |
| US11672279B2 (en) | 2011-09-06 | 2023-06-13 | Nicoventures Trading Limited | Heating smokeable material |
| US11744964B2 (en) | 2016-04-27 | 2023-09-05 | Nicoventures Trading Limited | Electronic aerosol provision system and vaporizer therefor |
| US11896055B2 (en) | 2015-06-29 | 2024-02-13 | Nicoventures Trading Limited | Electronic aerosol provision systems |
| US11924930B2 (en) | 2015-08-31 | 2024-03-05 | Nicoventures Trading Limited | Article for use with apparatus for heating smokable material |
| US12016393B2 (en) | 2015-10-30 | 2024-06-25 | Nicoventures Trading Limited | Apparatus for heating smokable material |
-
1984
- 1984-10-17 JP JP59217573A patent/JPS6196763A/en active Pending
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0729930U (en) * | 1991-04-30 | 1995-06-02 | トリニティ工業株式会社 | Semiconductor switch |
| US10543323B2 (en) | 2008-10-23 | 2020-01-28 | Batmark Limited | Inhaler |
| US10010695B2 (en) | 2011-02-11 | 2018-07-03 | Batmark Limited | Inhaler component |
| US10918820B2 (en) | 2011-02-11 | 2021-02-16 | Batmark Limited | Inhaler component |
| US11253671B2 (en) | 2011-07-27 | 2022-02-22 | Nicoventures Trading Limited | Inhaler component |
| US11672279B2 (en) | 2011-09-06 | 2023-06-13 | Nicoventures Trading Limited | Heating smokeable material |
| US11051551B2 (en) | 2011-09-06 | 2021-07-06 | Nicoventures Trading Limited | Heating smokable material |
| US10045562B2 (en) | 2011-10-21 | 2018-08-14 | Batmark Limited | Inhaler component |
| US10881138B2 (en) | 2012-04-23 | 2021-01-05 | British American Tobacco (Investments) Limited | Heating smokeable material |
| US11272740B2 (en) | 2012-07-16 | 2022-03-15 | Nicoventures Holdings Limited | Electronic vapor provision device |
| US10765147B2 (en) | 2014-04-28 | 2020-09-08 | Batmark Limited | Aerosol forming component |
| US11779718B2 (en) | 2014-04-28 | 2023-10-10 | Nicoventures Trading Limited | Aerosol forming component |
| US10602777B2 (en) | 2014-07-25 | 2020-03-31 | Nicoventures Holdings Limited | Aerosol provision system |
| US11083856B2 (en) | 2014-12-11 | 2021-08-10 | Nicoventures Trading Limited | Aerosol provision systems |
| US11896055B2 (en) | 2015-06-29 | 2024-02-13 | Nicoventures Trading Limited | Electronic aerosol provision systems |
| US11659863B2 (en) | 2015-08-31 | 2023-05-30 | Nicoventures Trading Limited | Article for use with apparatus for heating smokable material |
| US11924930B2 (en) | 2015-08-31 | 2024-03-05 | Nicoventures Trading Limited | Article for use with apparatus for heating smokable material |
| US12016393B2 (en) | 2015-10-30 | 2024-06-25 | Nicoventures Trading Limited | Apparatus for heating smokable material |
| US11744964B2 (en) | 2016-04-27 | 2023-09-05 | Nicoventures Trading Limited | Electronic aerosol provision system and vaporizer therefor |
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