JPS6196536U - - Google Patents
Info
- Publication number
- JPS6196536U JPS6196536U JP18175684U JP18175684U JPS6196536U JP S6196536 U JPS6196536 U JP S6196536U JP 18175684 U JP18175684 U JP 18175684U JP 18175684 U JP18175684 U JP 18175684U JP S6196536 U JPS6196536 U JP S6196536U
- Authority
- JP
- Japan
- Prior art keywords
- gas
- inner tube
- tube
- inlet
- receiving portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図ａ，ｂは、本考案の一実施例に係る熱処
理用石英管の軸方向に切断した断面図と、軸方向
から見た側面図である。第２図は、本考案の従来
技術に係る、熱処理用石英管の断面図である。
１…内管、１１…ガス送入口、１２…キヤツプ
、１３…引き出し棒、２…外管、２１…ガス流入
口、２２…ガス流出口、２３…ガス流入管、２４
…ガス受け部、２５…ガス流入管、２６…石英製
支柱、３…被処理体、４…ヒータ。
FIGS. 1a and 1b are a cross-sectional view cut in the axial direction and a side view seen from the axial direction of a quartz tube for heat treatment according to an embodiment of the present invention. FIG. 2 is a sectional view of a quartz tube for heat treatment according to the prior art of the present invention. DESCRIPTION OF SYMBOLS 1... Inner pipe, 11... Gas inlet, 12... Cap, 13... Pull-out rod, 2... Outer tube, 21... Gas inlet, 22... Gas outlet, 23... Gas inlet pipe, 24
...Gas receiving part, 25...Gas inflow pipe, 26...Quartz support column, 3...Object to be treated, 4...Heater.
Claims (1)
を囲んで設けられるヒータとよりなり、前記内管
の１端にはガス送入口が設けられ、前記外管の１
端には２本以上のらせん状チユーブよりなるガス
流入管が設けられ、該ガス流入管の他端には１個
のガス受け部が設けられ、該ガス受け部には２個
以上のガス流入口が設けられてなることを特徴と
する熱処理用石英管。 Consisting of an inner tube, an outer tube surrounding the inner tube, and a heater surrounding the inner tube, one end of the inner tube is provided with a gas inlet, and one end of the outer tube is provided with a gas inlet.
A gas inflow pipe consisting of two or more spiral tubes is provided at one end, a gas receiving portion is provided at the other end of the gas receiving portion, and two or more gas flows are provided at the other end of the gas inflow pipe. A quartz tube for heat treatment, characterized in that it is provided with an inlet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18175684U JPH0219960Y2 (en) | 1984-11-30 | 1984-11-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18175684U JPH0219960Y2 (en) | 1984-11-30 | 1984-11-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6196536U true JPS6196536U (en) | 1986-06-21 |
| JPH0219960Y2 JPH0219960Y2 (en) | 1990-05-31 |
Family
ID=30739297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18175684U Expired JPH0219960Y2 (en) | 1984-11-30 | 1984-11-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0219960Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01207926A (en) * | 1988-02-16 | 1989-08-21 | Toshiba Corp | Treatment apparatus for semiconductor wafer |
-
1984
- 1984-11-30 JP JP18175684U patent/JPH0219960Y2/ja not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01207926A (en) * | 1988-02-16 | 1989-08-21 | Toshiba Corp | Treatment apparatus for semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0219960Y2 (en) | 1990-05-31 |