JPS61943A - Light memory disk - Google Patents
Light memory diskInfo
- Publication number
- JPS61943A JPS61943A JP59122374A JP12237484A JPS61943A JP S61943 A JPS61943 A JP S61943A JP 59122374 A JP59122374 A JP 59122374A JP 12237484 A JP12237484 A JP 12237484A JP S61943 A JPS61943 A JP S61943A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- recording film
- film
- recording
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/256—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers improving adhesion between layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/2432—Oxygen
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、光照射により記録膜に情報をヒント記録する
光メモリディスクの構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to the structure of an optical memory disk in which information is recorded in a recording film by means of light irradiation.
従来例の構成とその問題点
近年、実時間での記録再生が可能な光メモリディスクが
大容量メモリとして太いに期待されている。これは例え
ば高速回転するディスクに光を照射してその記録膜にビ
ット記録し、光によって読み取るものであり記録再生を
ディスクと非接触で行うため、ピックアップおよびディ
スクを傷つけないこと、および情報へのアクセスが高速
でできる等の利点を有している。Conventional configurations and their problems In recent years, optical memory disks capable of recording and reproducing in real time have been highly anticipated as large-capacity memories. For example, this uses light to irradiate a high-speed rotating disk to record bits on its recording film, and then read the data using the light. Recording and playback are performed without contacting the disk, so there is no need to damage the pickup or the disk, and there is no need to damage the information. It has advantages such as fast access.
第１図は光メモリディスクの断面の一部および光の照射
状態の一例を示している。透明体よシなる基板１１には
光のトラッキングを可能にする凹または凸の溝トランク
１２が形成されており、この上に記録膜１３が形成され
る。記録再生時には、この溝トラツク１２に沿って光ス
ポット１５が走るようにトラッキング制御がなされる。FIG. 1 shows a part of a cross section of an optical memory disk and an example of a light irradiation state. A concave or convex groove trunk 12 that enables light tracking is formed on a substrate 11 made of a transparent material, and a recording film 13 is formed on this. During recording and reproduction, tracking control is performed so that the light spot 15 runs along this groove track 12.
実時間の記録再生を可能にする記録［１３としてはＴｅ
Ｏｘ（０＜ｘ＜２）薄膜がある。このＴｅＯ工はＴ ｅ
Ｏ２とＴｅとの混合物であり、光照射による熱によシ
相変態が生じ反射率の増大および透過率の減少によって
記録ビットを形成するものである。Recording that enables real-time recording and playback [13 is Te
There is an Ox (0<x<2) thin film. This TeO work is T e
It is a mixture of O2 and Te, and undergoes phase transformation due to heat caused by light irradiation, increasing reflectance and decreasing transmittance, thereby forming recording bits.
記録膜自体の体積変化を利用しないため記録膜１３上に
直接、樹脂等による保護層１４を形成することができる
。このため、強度的に優れ取扱いの容易なディスク構造
にすることができる。Since the volume change of the recording film itself is not utilized, the protective layer 14 made of resin or the like can be directly formed on the recording film 13. Therefore, it is possible to obtain a disk structure that has excellent strength and is easy to handle.
光ディスクに要求される重要な因子の一つに耐候性があ
シ、長期間においてそのディスク品質を保証する必要が
ある。ところが高温高湿の過酷な条件下にあっては、デ
ィスク品質の劣化は加速され、保証期間は短縮される。One of the important factors required for optical discs is weather resistance, and it is necessary to guarantee the quality of the disc over a long period of time. However, under harsh conditions of high temperature and humidity, the deterioration of disc quality is accelerated and the warranty period is shortened.
例えば、第２図に示すように溝トラツク２２を有するア
クリル基板２１にＴｅＯ□薄膜２３を形成し、さらにア
クリル基板２４を接着樹脂２６を介して密着したディス
クの場合、温度２０”Ｃ，湿度４０％の常温、常湿の環
境下では数十年、経てもディスク品質に変化は見られな
い。ところが温度７０°Ｃ１湿度９０％の過酷な環境下
では、約１０００時間て基板２１とＴ ｅ Ｏｘ薄膜２
３との間で剥離が見られる。これは、基板を通して水分
が浸入し、この水分が基板１１とＴｅＯ工薄膜１３との
結合力を打ち破るためであると考えられる。光メモリデ
ィスクは情程を長期にわたってファイルする役目を担っ
ており、過酷な環境下においてもディスク品質が損なわ
れないことが望ましい。この意味においても前述の構成
の光メモリディスクでは耐候性に問題があるといえ、よ
り長時間の品質が保証されることが望ましい。Ｏｒに対
しＮｉ層を設けても同様の効果を得ることができる。For example, in the case of a disk in which a TeO□ thin film 23 is formed on an acrylic substrate 21 having groove tracks 22 as shown in FIG. %, no change in disc quality is observed even after several decades in an environment of normal temperature and humidity.However, under a harsh environment of 70°C and 90% humidity, the substrate 21 and T e Ox Thin film 2
Peeling can be seen between 3 and 3. This is considered to be because moisture infiltrates through the substrate and this moisture breaks down the bonding force between the substrate 11 and the TeO thin film 13. Optical memory disks play the role of storing data over long periods of time, and it is desirable that the disk quality remains intact even under harsh environments. In this sense as well, it can be said that the optical memory disk with the above-mentioned configuration has a problem with weather resistance, and it is desirable to guarantee quality for a longer period of time. A similar effect can be obtained by providing a Ni layer for Or.
発明の目的
本発明は上記の問題点を解消するもので、高温高湿の過
酷な条件下においても基板と記録膜の間の剥離が見られ
ず、耐候性の優れた光メモリディスクを提供することを
目的とする。OBJECT OF THE INVENTION The present invention solves the above-mentioned problems, and provides an optical memory disk with excellent weather resistance and no peeling between the substrate and the recording film even under harsh conditions of high temperature and high humidity. With the goal.
発明の構成
本発明は、基板と記録膜の間あるいは記録膜と保護層の
間にＣｒ薄膜層を介在させることによって基板あるいは
保護層と記録膜との付着性を向上させ、高温高湿の条件
下にあっても記録膜に関しての剥離が生じないようにし
だものである。Structure of the Invention The present invention improves the adhesion between the substrate or the protective layer and the recording film by interposing a Cr thin film layer between the substrate and the recording film or between the recording film and the protective layer, and improves the adhesion between the substrate or the protective layer and the recording film under high temperature and high humidity conditions. This prevents the recording film from peeling off even if it is located underneath.
実施例の説明
第３図は本発明の一実施例を示す光メモリディスクの断
面図である。同心円あるいはスノくイラル状の溝トラツ
ク３２を有するアクリル製の基板３１上に、例えば真空
蒸着法にて例えば２ｎｍの厚さでＯｒ薄膜層３７を設け
、さらにその上に記録膜としてのＴｅｏｚ薄膜３３を真
空蒸着法によって１２０ｎｍ程度の厚さで形成する０さ
らに記録膜３３を保護するため、アクリル製の保換基板
３４を接着樹脂３６を介して密着し、ディスクを完成さ
せた。Ｏｒ薄膜層３７を持たない場合、前述の如く、温
度７０’Ｃ，湿度９０％の環境下で約１０００時間で基
板と記録膜の間で剥離が起きたが、第３図に示す本発明
の場合、７０００時間まで剥離が生ぜず、耐候性が非常
に向上された。これは、Ｃｒが相手材料に対して非常に
付着性がよく、アクリル基板３１と記録膜３２との間に
あって橋わたしの役目をして、両者の付着性を高めてい
るためである。第４図は第３図におけるＣｒ薄膜層の厚
さをいろいろ変えてディスクを作成し温度７０°Ｃ１湿
度９０％の環境下における基板と記録膜の間に剥離に生
ずるまでの時間とＣｒ薄膜層の厚さの関係を求めたもの
である。Ｃｒ薄膜層を加えることにより、剥離に至るま
での時間は長くなシその厚さは０．５ｎｍ以上で有効で
ある。DESCRIPTION OF THE EMBODIMENTS FIG. 3 is a sectional view of an optical memory disk showing an embodiment of the present invention. On an acrylic substrate 31 having concentric or serpentine groove tracks 32, an Or thin film layer 37 with a thickness of, for example, 2 nm is provided by, for example, a vacuum evaporation method, and a Teoz thin film 33 as a recording film is further applied thereon. was formed to a thickness of about 120 nm by vacuum evaporation.Furthermore, in order to protect the recording film 33, an acrylic retentive substrate 34 was adhered via an adhesive resin 36 to complete the disk. In the case without the Or thin film layer 37, as mentioned above, peeling occurred between the substrate and the recording film after about 1000 hours in an environment with a temperature of 70'C and a humidity of 90%, but in the case of the present invention shown in FIG. In this case, no peeling occurred for up to 7,000 hours, and the weather resistance was greatly improved. This is because Cr has very good adhesion to the other material and acts as a bridge between the acrylic substrate 31 and the recording film 32, increasing the adhesion between them. Figure 4 shows the time until peeling occurs between the substrate and the recording film and the Cr thin film layer under an environment of temperature 70°C and humidity 90% when discs were made with various thicknesses of the Cr thin film layer in Figure 3. The relationship between the thickness of By adding a Cr thin film layer, it takes a long time to reach peeling, and it is effective when the thickness is 0.5 nm or more.
基板と記録膜の間にＣｒ薄膜層が介在することによシ記
録再生特性に影響を与えないかを求めたものは第５図で
ある。これはディスクを１８０゜ｕｐｍで回転させ七、
単一周波数ｓ ＭＨｚ 金記録したときのＣ／Ｎを求め
たものであり、Ｃｒ薄膜層を持たない場合ｅｏｄＢを示
［７ているＯＯｒＣｒ薄膜層い場合、Ｃ，／Ｈにほとん
ど変化はみられないが、６ ｎｍ以上になるとＣ／Ｎが
低下しはじめてくる。これは光の照射側からみてＣｒ薄
膜層が記 ・銀膜の手前側に存在するため、Ｃｒ薄膜層
が厚くなると記録ビットの反射率変化が小さくなるため
であるが６ｎｍ以下では問題はない。FIG. 5 shows whether the presence of a Cr thin film layer between the substrate and the recording film affects the recording and reproducing characteristics. This rotates the disk at 180°upm, and
The C/N was determined when recording a single frequency s MHz gold, and when there is no Cr thin film layer, it shows eodB [7], but when there is an OOrCr thin film layer, there is almost no change in C, /H. However, when the thickness exceeds 6 nm, the C/N starts to decrease. This is because the Cr thin film layer is located on the front side of the silver film when viewed from the light irradiation side, so as the Cr thin film layer becomes thicker, the reflectance change of the recorded bit becomes smaller, but there is no problem if the thickness is 6 nm or less.
以上より、基板と記録膜との間のＣｒ薄膜層の厚さは０
．５ｎｍから６ｎｍの範囲が適当である。このＣｒ薄膜
層は第６図に示すように記録膜６３と保護層６４の間に
介在させることによっても両者の付着性を高めることが
でき、有効である。しかしこの場合のＣｒ薄膜６８は記
録再生に影響を与える位置関係にないため、０．Ｓｎｍ
以上の膜厚を有すれば付着性に問題はない。From the above, the thickness of the Cr thin film layer between the substrate and the recording film is 0.
．． A range of 5 nm to 6 nm is suitable. It is also effective to interpose this Cr thin film layer between the recording film 63 and the protective layer 64, as shown in FIG. 6, to improve the adhesion between the two. However, in this case, the Cr thin film 68 is not in a positional relationship that affects recording and reproduction, so 0. Snm
If the film thickness is above, there is no problem with adhesion.
なお、記録膜をＴｅｏｘとして説明したが、他の成分、
たとえばＧｅ、Ｓｎ等が添加されたＴｅｏｘであっても
その効果は同様である。さらに多層構造の記録膜におい
ても、穴あき記録機構の記録膜においても有効である。Although the recording film is described as Teox, other components,
For example, the effect is the same even if Teox is added with Ge, Sn, etc. Furthermore, it is effective for recording films having a multilayer structure as well as for recording films having a perforated recording mechanism.
この実施例では基板をアクリル製としたが、ポリ男−ボ
ネート基板を用いても、同様の効果が得られる。In this embodiment, the substrate is made of acrylic, but the same effect can be obtained by using a polycarbonate substrate.
発明の効果
以上のように本発明によれば、付着性に優れたＣｒ薄膜
層を基板と記録膜との間、あるいは記録膜と保護層の間
に介在させることにより、基板あるいは保護層と記録膜
との付着性が向上し、耐候性に優れた光メモリディスク
を得ることができ、その工業的価値は大きい。Effects of the Invention As described above, according to the present invention, by interposing a Cr thin film layer with excellent adhesion between the substrate and the recording film, or between the recording film and the protective layer, the substrate or the protective layer and the recording layer are interposed. It is possible to obtain an optical memory disk with improved adhesion to the film and excellent weather resistance, which has great industrial value.
第１図は光メモリディスクの概要を示す光メモリディス
クの断面図、第２図は従来例における光メモリディスク
の断面図、第３図は本発明の一実施例における光メモリ
ディスクの断面図、第４図は同光メモリディスクのＣｒ
薄膜層の厚さと基板と記録膜とで剥離に至るまでの時間
の関係を示す特性図、第５図は同Ｃｒ薄膜層の厚さとＣ
／Ｎの関係を示す特性図、第６図は本発明の第２の実施
例における光メモリディスクの断面図である。
１１．２１ ．３１・・・・・基板、１２，２２．３２
・・・・・・溝トラツク、１３．２３．３３．６３・・
・・・・記録膜（Ｔｅａ、薄膜） 、 １４ 、 ｅ
４−・−−−−保護層、２６゜３６・・・・・・接着樹
脂、３７．６８・・・・・・Ｃｒ薄膜層。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図
第３図
第４図
（メ／１１１１６１
第５図
Ｃ，蕩櫃槽ＩＦ＋厚さ （初ＪFIG. 1 is a cross-sectional view of an optical memory disk showing an overview of the optical memory disk, FIG. 2 is a cross-sectional view of a conventional optical memory disk, FIG. 3 is a cross-sectional view of an optical memory disk according to an embodiment of the present invention, and FIG. Same optical memory disk Cr
A characteristic diagram showing the relationship between the thickness of the thin film layer and the time until separation occurs between the substrate and the recording film. Figure 5 shows the relationship between the thickness of the Cr thin film layer and C.
FIG. 6 is a cross-sectional view of an optical memory disk according to a second embodiment of the present invention. 11.21. 31... Board, 12, 22.32
... Groove truck, 13.23.33.63...
...Recording film (Tea, thin film), 14, e
4----Protective layer, 26°36...adhesive resin, 37.68...Cr thin film layer. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 Figure 3 Figure 4 (Me/111161 Figure 5 C, Ark tank IF + thickness (First J
Claims (3)
膜とを有し、前記記録膜の少なくとも一方の側にＣｒ薄
膜層を有することを特徴とする光メモリディスク。(1) An optical memory disk comprising at least a substrate and a recording film formed on the substrate, and having a Cr thin film layer on at least one side of the recording film.
にあることを特徴とする特許請求の範囲第１項記載の光
メモリディスク。(2) The optical memory disk according to claim 1, wherein the thickness of the Cr thin film layer is in the range of 0.5 nm to 5 nm.
ることを特徴とする特許請求の範囲第１項記載の光メモ
リディスク。(3) The optical memory disk according to claim 1, wherein the recording film has TeO_x (0<x<2) as a main component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59122374A JPS61943A (en) | 1984-06-14 | 1984-06-14 | Light memory disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59122374A JPS61943A (en) | 1984-06-14 | 1984-06-14 | Light memory disk |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61943A true JPS61943A (en) | 1986-01-06 |
Family
ID=14834262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59122374A Pending JPS61943A (en) | 1984-06-14 | 1984-06-14 | Light memory disk |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61943A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6216193A (en) * | 1985-07-15 | 1987-01-24 | Matsushita Electric Ind Co Ltd | Optical information-recording member |
| JPH03102115U (en) * | 1990-02-07 | 1991-10-24 | ||
| US5098781A (en) * | 1990-12-28 | 1992-03-24 | General Electric Company | Thermoplastic film, reinforced hollow glass microsphere reinforced laminates for thin low dielectric constant substrates |
-
1984
- 1984-06-14 JP JP59122374A patent/JPS61943A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6216193A (en) * | 1985-07-15 | 1987-01-24 | Matsushita Electric Ind Co Ltd | Optical information-recording member |
| JPH03102115U (en) * | 1990-02-07 | 1991-10-24 | ||
| US5098781A (en) * | 1990-12-28 | 1992-03-24 | General Electric Company | Thermoplastic film, reinforced hollow glass microsphere reinforced laminates for thin low dielectric constant substrates |
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