JPS6190432A - Flap support mechanism - Google Patents
Flap support mechanismInfo
- Publication number
- JPS6190432A JPS6190432A JP59211288A JP21128884A JPS6190432A JP S6190432 A JPS6190432 A JP S6190432A JP 59211288 A JP59211288 A JP 59211288A JP 21128884 A JP21128884 A JP 21128884A JP S6190432 A JPS6190432 A JP S6190432A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- displacement
- springs
- axis
- rigidity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006073 displacement reaction Methods 0.000 claims abstract description 32
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract description 13
- 238000005452 bending Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
この発明はＸ線露光装置のマスクステージ等に用いるあ
おり支持機構に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a tilt support mechanism used in a mask stage of an X-ray exposure apparatus.
Ｘ線露光装置においては、マスクとウェハとを近接して
５置し、Ｘ線をマスクに照射して、マスクパタンをウェ
ハ表面に塗布したレジスト上に転写する。この場合、ウ
ェハに対してマスクが平行に置かれていないと、転写さ
れるパタンにひずみが生ずる。このため、マスクを支持
するマスクステージにはあおり支接機構か設けられてい
る。In an X-ray exposure apparatus, a mask and a wafer are placed close to each other, and the mask is irradiated with X-rays to transfer the mask pattern onto a resist coated on the wafer surface. In this case, if the mask is not placed parallel to the wafer, distortion will occur in the transferred pattern. For this reason, a tilt support mechanism is provided on the mask stage that supports the mask.
第６図は従来のあおり支持機構を有するＸ線露光装置の
マスクステージを示す平面図、第７図は同じく正断面図
である。図において、１４はマスクステージ支持枠、１
３はマスクホルダ取付枠、１５は中空の円板バネで、円
板バネ１５の外周、内周はそれぞれマスクステージ支持
枠１４、マスクホルダ取付枠１３に取付けられている。FIG. 6 is a plan view showing a mask stage of an X-ray exposure apparatus having a conventional tilt support mechanism, and FIG. 7 is a front sectional view thereof. In the figure, 14 is a mask stage support frame, 1
3 is a mask holder attachment frame; 15 is a hollow disk spring; the outer and inner peripheries of the disk spring 15 are attached to the mask stage support frame 14 and the mask holder attachment frame 13, respectively.
２はマスクホルダ取付枠１３に取付けられているマスク
ホルダ、１はマスクホルダ２に吸着されたマスク、４は
ウエノ）ホルダ、３はウェハホルダ４に吸着されたウェ
ノ１．２０はマスクステージ支持枠１４に固定されたブ
ラケット、５〜８はブラケット２０に取付けられた電磁
石で、電磁石５〜８はマスク１の中心点を通りかつ直角
なＸ軸、Ｙ軸上に設けられており、電磁石５〜８の中に
は永久磁石が組込まれていて、正の電流を流すと増磁し
、負の電流を流すと減磁する。2 is a mask holder attached to the mask holder attachment frame 13, 1 is a mask sucked to the mask holder 2, 4 is a wafer holder, 3 is a weno holder 1.20 is a mask suctioned to the wafer holder 4, and 20 is a mask stage support frame 14. Electromagnets 5 to 8 are attached to the bracket 20, and electromagnets 5 to 8 are provided on the X and Y axes that pass through the center point of the mask 1 and are perpendicular to each other. A permanent magnet is built into it, and it becomes magnetized when a positive current is passed through it, and demagnetized when a negative current is passed through it.
９〜１２はマスクホルダ取付枠１３に取付けられたアマ
チャで、アマチャ９〜１２はそれぞれ電磁石５〜８に対
向する位置に設けられている。Armatures 9 to 12 are attached to the mask holder attachment frame 13, and the armatures 9 to 12 are provided at positions facing the electromagnets 5 to 8, respectively.
このあおり支持機構においては、電磁石５に正の電流を
流し、電磁石７に負の電流を流すと、電磁石５とアマチ
ャ９との間の隙間が減少し、電磁石７とアマチャ１１と
の間の隙間が増大するので、マスクｌを第７図矢印Ｆの
方向すなわちＹ軸回りにあおることができる。また、電
磁石５に負の電流を流し、電磁石７に正の電流を流すと
、マスクＩを矢印Ｆと反対方向にあおると七ができる。In this tilting support mechanism, when a positive current is passed through the electromagnet 5 and a negative current is passed through the electromagnet 7, the gap between the electromagnet 5 and the armature 9 decreases, and the gap between the electromagnet 7 and the armature 11 decreases. increases, so that the mask l can be moved in the direction of arrow F in FIG. 7, that is, around the Y axis. Further, when a negative current is applied to the electromagnet 5 and a positive current is applied to the electromagnet 7, the mask I is rotated in the opposite direction to the arrow F to form a pattern 7.
さらに、電磁石６．８に電流を流すと、マスクｌをＸ軸
回りにあおることができる。また、全電磁石５〜８に同
じ大きさの電流を流すことによって、Ｘ軸、Ｙ軸と直゛
角なＸ軸方向の変位を与えることができる。したがって
、マスク１をウニ”３に対□ して平行にすることが
でき、かつマスク１とウェハ３との距離を所定の値にす
ることができる。Furthermore, by passing a current through the electromagnet 6.8, the mask l can be moved around the X-axis. Further, by passing current of the same magnitude through all the electromagnets 5 to 8, displacement in the X-axis direction perpendicular to the X-axis and the Y-axis can be applied. Therefore, the mask 1 can be made parallel to the sea urchin 3, and the distance between the mask 1 and the wafer 3 can be set to a predetermined value.
ところで、マスク１にあおり変位、Ｘ軸方向変位を与え
た場合には、円板バネ１５が変形するが、円板バネ１５
は平面状であり、かつ外周、内周がマスクステージ支持
枠１４、マスクホルダ取付枠】３に取付けられているた
め、マスクｌにあおり変位を与えたときには、円板バネ
１５が複雑に変形して、Ｘ軸、Ｙ軸、Ｘ軸方向にも干渉
変位が生じてしまい、とくにＸ軸方向の干渉変位が大き
く、中心から２７姻の点におけるあおり変位に対するＸ
軸方向の干渉変位の割合つまりＸ軸方向の軸間干渉が１
００％以上となる。このため、マスクｌとウェハ３とを
平行にし、かつマスクｌとウェハ３との距離を所定値に
する作業すなわちマスク１とウェハ３との位置決め作業
に多くの時間を要する。また、円板バネ１５はあおり変
位に対する剛性が大きいため、マスクｌに大きなあおり
変位を与えることができない。そして、マスク１に大き
なあおり変位を与えるために、円板バネ１５にスリット
を設けることが考えられるが、この場合にはスリットの
加工精度が低いと、スリットの形状にバラツキが生じて
、あおり変位に対する円板バネ１５の剛性があおり方向
によって変化するから、マスク１に任意の方向のあおり
変位を与えることが困難になる。By the way, when the mask 1 is given a tilting displacement or a displacement in the X-axis direction, the disc spring 15 is deformed;
is flat, and the outer and inner peripheries are attached to the mask stage support frame 14 and the mask holder mounting frame 3, so when the mask l is subjected to tilting displacement, the disc spring 15 deforms in a complicated manner. Therefore, interference displacement also occurs in the X-axis, Y-axis, and X-axis directions, and the interference displacement in the X-axis direction is particularly large.
The ratio of interference displacement in the axial direction, that is, the interference between the axes in the X-axis direction is 1
00% or more. Therefore, it takes a lot of time to make the mask 1 and wafer 3 parallel and to set the distance between the mask 1 and the wafer 3 to a predetermined value, that is, to position the mask 1 and the wafer 3. Further, since the disk spring 15 has a large rigidity against tilting displacement, it is not possible to apply a large tilting displacement to the mask l. In order to give a large tilting displacement to the mask 1, it is conceivable to provide a slit in the disc spring 15, but in this case, if the machining accuracy of the slit is low, variations in the shape of the slit will occur, causing the tilting displacement. Since the rigidity of the disc spring 15 relative to the mask 1 changes depending on the tilting direction, it becomes difficult to apply tilting displacement to the mask 1 in any direction.
この発明は上述の間層点を解決するためになされたもの
で、位置決め作業を短時間に行なうことができ、大きな
あおり変位を与えることができ、かつ任意の方向のあお
り変位を容易に与えることができるあおり支持機構を提
供することを目的とする。This invention was made in order to solve the above-mentioned interlayer point, and it is possible to perform positioning work in a short time, to give a large tilting displacement, and to easily give a tilting displacement in any direction. The purpose of the present invention is to provide a tilting support mechanism that allows for
［発明の概要〕
この目的を達成するため、この発明においては、第１部
材と第２部材とがバネで連結され、上記第１部材と上記
第２部材とのあおり変位を非接触で変化させるあおり手
段が設けられたあおり支持機構において、上記バネとし
て柱状でかつ柱軸と直角な切れ目を設けた複数の交差指
バネを用いる。[Summary of the Invention] In order to achieve this object, in the present invention, a first member and a second member are connected by a spring, and the tilting displacement between the first member and the second member is changed without contact. In the tilting support mechanism provided with tilting means, a plurality of interdigital springs are used as the springs, each having a columnar shape and having cuts perpendicular to the columnar axis.
第１図はこの発明に係るあおり支持機構を有するＸ線露
光装置のマスクステージを示す平面図、第２図は第１図
のＡ−０−Ｎ断面図である。図において、２１はマスク
ステージ支持枠１４に固定されたブラケット、１６〜１
９はブラケット２１とマスクホルダ取付枠１３とを連結
した交差指バネで、交差指バネ１６〜】９はＸ軸、Ｙ軸
に対して４５°の方向に設けられており、交差指バネ１
６〜１９は柱状でかつ柱軸と直角な切れ目が設けられて
いる。FIG. 1 is a plan view showing a mask stage of an X-ray exposure apparatus having a tilt support mechanism according to the present invention, and FIG. 2 is a sectional view taken along line A0-N in FIG. In the figure, 21 is a bracket fixed to the mask stage support frame 14;
9 is an interdigital spring connecting the bracket 21 and the mask holder mounting frame 13;
6 to 19 are columnar and have cuts perpendicular to the column axis.
このあおり支持似構においては、マスクステージ支持枠
１４とマスクホルダ取付枠１３とを交差指バネ１６〜１
９で連結しているから、軸間干渉が非常に小さい。すな
わち、第３図はあおり変位を与えるためにたとえば電磁
石５．７に流す電流と中心がら２７調の点におけるあお
り変位、Ｘ軸方向変位との間係を示すグラフであるが、
このグラフがら明らかなよう・ｌζ、Ｘ軸方向の軸間干
渉は最大で約１４チと極めて小さい。また、交差指バネ
１６〜１９の曲げ剛性９回転剛性は非常に大きいので、
Ｘ軸方向。In this tilt support structure, the mask stage support frame 14 and the mask holder attachment frame 13 are connected by interdigital springs 16 to 1.
Since they are connected by 9, interference between axes is extremely small. That is, FIG. 3 is a graph showing the relationship between the current flowing through the electromagnet 5.7, for example, to give a tilt displacement, and the tilt displacement and X-axis direction displacement at a point 27th from the center.
As is clear from this graph, the interference between the axes in the lζ and X-axis directions is extremely small, at a maximum of about 14 inches. In addition, since the bending rigidity and nine-rotation rigidity of the interdigital springs 16 to 19 are very large,
X-axis direction.
Ｙ軸方向の軸間干渉も極めて小さい。さらに、交差指バ
ネ１６〜１９の柱軸方向の剛性は小さいから、マスク１
に大きなあおり変位を与えることができ。Interaxis interference in the Y-axis direction is also extremely small. Furthermore, since the rigidity of the interdigital springs 16 to 19 in the column axis direction is small, the mask 1
It can give a large tilting displacement.
またあおり変位に対する交差指バネ１６〜１９の剛性が
あおり方向にかかわらず一定であるから、マースフｌに
任意の方向のあおり変位を容易に与えることができる。In addition, since the rigidity of the interdigital springs 16 to 19 with respect to tilting displacement is constant regardless of the tilting direction, tilting displacement in any direction can be easily applied to Mars-Fl.
さらに、交差指バネ１６〜１９は円板バネ１５と比較し
て占有面積が小さいので、機構を小さくかつコンパクト
にまとめることができる。Further, since the interdigital springs 16 to 19 occupy a smaller area than the disc spring 15, the mechanism can be made smaller and more compact.
第４図＋ａ＋は交差指バネを示す正面図、第４図＋ｂ）
は同じく右側面図、第４図ｆｃｌは第４図（ａ）のＢ−
Ｂ断面図、第４図ｔｄ）は第４図＋ａ＋のＣ−Ｃ断面図
である。図において、２２は円柱状の交差指バネ本体、
２３はバネ本体２２の中央に設けられた円形孔で、円形
孔２３の中心線はバネ本体２２の中心線と一致している
。２４．２５はそれぞれバネ本体２２に第４図ｆａｔ紙
面の右方、左方から設けられた切れ目で、切れ目２４．
２５はバネ本体２２の柱軸と直角に設けられている。Figure 4+a+ is a front view showing the interdigital spring, Figure 4+b)
is the same right side view, and fcl in Fig. 4 is B- in Fig. 4(a).
B sectional view, FIG. 4 td) is a CC sectional view of FIG. 4+a+. In the figure, 22 is a cylindrical interdigital spring body;
23 is a circular hole provided in the center of the spring body 22, and the center line of the circular hole 23 coincides with the center line of the spring body 22. 24 and 25 are cuts provided in the spring body 22 from the right and left sides of the page of FIG. 4, respectively.
25 is provided at right angles to the column axis of the spring body 22.
第５図ｆａｔは他の交差指バネを示す正面図、第５図（
ｂｌは同じ（右側面図、第５図ｔｅｌは第５図（ａｌの
Ｄ−Ｄ断面図、第５図（ｄｌは第５図（ａ）ｃＤＥ−Ｅ
断面図である。図において、２６．２７はそれぞれバネ
本体２２に第５図ｆａｔ紙面の後方、前方から設けられ
た切れ目で、切れ目２６．２７はバネ本体２２の柱軸と
直角に設けられている。Figure 5 fat is a front view showing another interdigital spring, Figure 5 (
BL is the same (right side view, Figure 5 tel is Figure 5 (al's DD sectional view, Figure 5 (dl is Figure 5 (a) cDE-E
FIG. In the figure, 26 and 27 are cuts provided in the spring body 22 from the rear and front of the page of FIG.
なお、上述実施例においては、Ｘ線露光装置のマスクス
テージに用いるあおり支持機構について説明したが、池
のあおり支持機構にもこの発明を適当できることは当然
である。また、上述実施例においては、あおり手段とし
て電磁石５〜８を用いた場合について説明したが、静電
力を利用したものを用いてもよい。さらに、上述実施例
においては、４個の交差指バネ１６〜１９を設けたが、
２個以上の交差指バネを設ければよい。また、交差指バ
ネとして円形孔を有する円柱状のものを例示したが、角
柱状のもの、孔のないものを用いてもよい。さらに、交
差指バネとして２方向、４方向から切れ目２４〜２７を
設けたものを例示したが、切れ目を３方向、５方向以上
から設けてもよい。In the above-mentioned embodiment, the tilting support mechanism used for the mask stage of an X-ray exposure apparatus has been described, but it goes without saying that the present invention can also be applied to a tilting support mechanism for a pond. Furthermore, in the above-mentioned embodiment, a case has been described in which the electromagnets 5 to 8 are used as the agitation means, but it is also possible to use electromagnets that utilize electrostatic force. Furthermore, in the above embodiment, four interdigital springs 16 to 19 were provided, but
Two or more interdigital springs may be provided. In addition, although a cylindrical spring having a circular hole is illustrated as an interdigital spring, a prismatic spring or a spring without holes may also be used. Furthermore, although the interdigital springs have been exemplified in which cuts 24 to 27 are provided from two or four directions, cuts may be provided from three directions or from five or more directions.
以上説明したように、この発明に係るあおり支持機構に
おいては、あおり変位を与えた１５合の軸間干渉が非常
に小さいので、位置決め作業を短時間に行なうことがで
き、また大きなあおり変位を与えることができ、かつ任
意の方向のあおり変位を容易に与えることができ、さら
に機構を小さくかつコンパクトにまとめることができる
。このように、この発明の効果は顕著である。As explained above, in the tilting support mechanism according to the present invention, the interference between the shafts at the 15th position that gives tilting displacement is very small, so positioning work can be done in a short time, and it is possible to provide a large tilting displacement. It is possible to easily apply tilting displacement in any direction, and furthermore, the mechanism can be made small and compact. As described above, the effects of this invention are remarkable.
第１図はこの発明に係るあおり支持機構を有するＸ線露
光装置のマスクステージを示す平面図、第２図は第１図
のＡ−０−Ａ断面図、第３図は電磁石に流す電流とあお
り変位、Ｚ軸方向変位との関係を示すグラフ、第４図、
第５図はそれぞれ交差指バネを示す図、第６図は従来の
あおり支持機構を有するＸ線露光装置のマスクステージ
を示す平面図、第７図は同じく正断面図である。
５〜８・・・電磁石
１３・・・マスクホルダ取付枠
１４・・・マスクステージ支持枠
１６〜１９・・・交差指バネ
２４〜２７・・・切れ口Fig. 1 is a plan view showing a mask stage of an X-ray exposure apparatus having a tilt support mechanism according to the present invention, Fig. 2 is a sectional view taken along A-0-A in Fig. Graph showing the relationship between tilt displacement and Z-axis direction displacement, Figure 4.
FIG. 5 is a diagram showing interdigital springs, FIG. 6 is a plan view showing a mask stage of an X-ray exposure apparatus having a conventional tilt support mechanism, and FIG. 7 is a front sectional view. 5-8... Electromagnet 13... Mask holder mounting frame 14... Mask stage support frame 16-19... Interdigital springs 24-27... Cut ends
Claims (1)
材と上記第２部材とのあおり変位を非接触で変化させる
あおり手段が設けられたあおり支持機構において、上記
バネとして柱状でかつ柱軸と直角な切れ目を設けた複数
の交差指バネを用いたことを特徴とするあおり支持機構
。A tilting support mechanism in which a first member and a second member are connected by a spring and is provided with tilting means for changing tilting displacement between the first member and the second member without contact, wherein the spring is columnar and A tilting support mechanism characterized by the use of multiple interdigital springs with cuts perpendicular to the column axis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59211288A JPS6190432A (en) | 1984-10-11 | 1984-10-11 | Flap support mechanism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59211288A JPS6190432A (en) | 1984-10-11 | 1984-10-11 | Flap support mechanism |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6190432A true JPS6190432A (en) | 1986-05-08 |
Family
ID=16603447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59211288A Pending JPS6190432A (en) | 1984-10-11 | 1984-10-11 | Flap support mechanism |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6190432A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009243628A (en) * | 2008-03-31 | 2009-10-22 | Ihi Corp | Spring with freely-settable-spring-constant, and vibrator support device using the same |
| JP2010014596A (en) * | 2008-07-04 | 2010-01-21 | Ihi Corp | Rotary machine support device |
| JP2010025862A (en) * | 2008-07-23 | 2010-02-04 | Ihi Corp | Rotary machine support device and design method thereof |
| JP2012233594A (en) * | 2012-08-24 | 2012-11-29 | Ihi Corp | Rotating machine supporting device and vibration characteristics measuring method using the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5373078A (en) * | 1976-12-13 | 1978-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Fine adjustment mechanism of electromagnetic driving type |
| JPS5614233B2 (en) * | 1974-11-29 | 1981-04-02 | ||
| JPS58103136A (en) * | 1981-12-16 | 1983-06-20 | Nippon Kogaku Kk <Nikon> | Gap setter |
| JPS5917341B2 (en) * | 1978-11-02 | 1984-04-20 | フオ−ド モ−タ− カンパニ− | Evaporator for air conditioner |
-
1984
- 1984-10-11 JP JP59211288A patent/JPS6190432A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5614233B2 (en) * | 1974-11-29 | 1981-04-02 | ||
| JPS5373078A (en) * | 1976-12-13 | 1978-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Fine adjustment mechanism of electromagnetic driving type |
| JPS5917341B2 (en) * | 1978-11-02 | 1984-04-20 | フオ−ド モ−タ− カンパニ− | Evaporator for air conditioner |
| JPS58103136A (en) * | 1981-12-16 | 1983-06-20 | Nippon Kogaku Kk <Nikon> | Gap setter |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009243628A (en) * | 2008-03-31 | 2009-10-22 | Ihi Corp | Spring with freely-settable-spring-constant, and vibrator support device using the same |
| JP2010014596A (en) * | 2008-07-04 | 2010-01-21 | Ihi Corp | Rotary machine support device |
| JP2010025862A (en) * | 2008-07-23 | 2010-02-04 | Ihi Corp | Rotary machine support device and design method thereof |
| JP2012233594A (en) * | 2012-08-24 | 2012-11-29 | Ihi Corp | Rotating machine supporting device and vibration characteristics measuring method using the same |
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