JPS618634A - Heat detecting circuit - Google Patents

Heat detecting circuit

Info

Publication number
JPS618634A
JPS618634A JP12870884A JP12870884A JPS618634A JP S618634 A JPS618634 A JP S618634A JP 12870884 A JP12870884 A JP 12870884A JP 12870884 A JP12870884 A JP 12870884A JP S618634 A JPS618634 A JP S618634A
Authority
JP
Japan
Prior art keywords
voltage
transistor
trq1
base
vbeon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12870884A
Other languages
Japanese (ja)
Inventor
Yukio Tamegaya
為ケ谷　幸夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12870884A priority Critical patent/JPS618634A/en
Publication of JPS618634A publication Critical patent/JPS618634A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions

Abstract

PURPOSE:To allow the heat detecting circuit to generate instantaneously an output above a set temperature by providing a means which applies a specific voltage between the base and emitter of a transistor (TR) and also providing a positive feedback means between the output electrode and input electrode of the TR. CONSTITUTION:The voltage VB which is obtained by dividing a source voltage VCC through resistances R1 and R2 as shown by an equation I is applied to the base of a TRQ1. When the TRQ1 is cut off at room temperatures, a TRQ2 turns on and the emitter voltage VE of the TRQ1 is as shown by an equation II. Further, a negative coefficient is given to a base-emitter voltage VBEON for turning on the TRQ1, and the voltage VBEON is held low at high temperatures. Therefore, the TRQ1 turns on speedily when VB-VE>VBEON because of the positive feedback operation of the TRQ2 and generates a stable output when VB<VBEON, so the application of this heat detecting circuit to a protecting circuit for an IC limits heat generation securely to prevent oscillations.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体集積回路の温度を検出する熱検知回路に
関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a heat detection circuit that detects the temperature of a semiconductor integrated circuit.

（従来技術） 半導体集積回路（以下ＩＣと略す）等においては、負荷
ショート等の異常状像で、ＩＣチップの内部温度が上昇
して破壊することがある。ＩＣチ、ブの内部温度の上昇
による破壊を保護するため熱検知回路で温度を検出し、
所定の温度を越えると加熱部に電流が供給されないよう
にしていた。(Prior Art) In a semiconductor integrated circuit (hereinafter abbreviated as IC), an abnormal condition such as a load short circuit may cause the internal temperature of the IC chip to rise and destroy it. In order to protect IC chips from being destroyed due to a rise in internal temperature, a heat detection circuit detects the temperature.
When the temperature exceeds a predetermined temperature, current is not supplied to the heating section.

第３図はかかる熱検知回路の従来の例を示したものであ
る。Ｒ１〜Ｒ３は抵抗で、Ｑｌは熱検知用のＮＰＮ型ト
ランジスタである。トランジスタＱ！のベースに抵抗Ｒ
１とＲ３点で電源電圧■。０が分割された電圧が加えら
れ、設定された温度以上になるとトランジスタＱ１は導
通して負荷抵抗Ｒ３に出力を生じ、トランジスタＱ１の
コレクタから出力Ｖａ’に出す。すなわち、抵抗Ｒ１と
Ｒ１で分割された電圧が０．４　Ｖに設定されていると
。FIG. 3 shows a conventional example of such a heat detection circuit. R1 to R3 are resistors, and Ql is an NPN transistor for heat detection. Transistor Q! Resistor R at the base of
Power supply voltage ■ at points 1 and R3. When a voltage divided by 0 is applied and the temperature exceeds a set temperature, the transistor Q1 becomes conductive and produces an output at the load resistor R3, which is output from the collector of the transistor Q1 as an output Va'. That is, if the voltage divided by resistors R1 and R1 is set to 0.4V.

トランジスタＱｓが導通するためのベース・エミッタ間
電圧（以下ＶＢＢＯＮと略す）は常温では約０．７ｖな
ので、トランジス２９重は遮断状態にあり出力はでない
。ところが高温になって、Ｖ□ＯＮがｏ、　４　Ｖ以下
になると、トランジスタＱ１は導通して、出力を発生す
る。かかる出力で保護回路を動作させ１発熱部の電流を
制限するように構成することによ、９ＩＣチツプの温度
は設定された一定温度以上にはならず１発熱による破壊
は防がれる。Since the base-emitter voltage (hereinafter abbreviated as VBBON) for the transistor Qs to conduct is about 0.7V at room temperature, the transistor 29 is in a cutoff state and there is no output. However, when the temperature rises and V□ON becomes less than 4 V, transistor Q1 becomes conductive and generates an output. By configuring the protection circuit to operate with such an output to limit the current of one heat generating part, the temperature of the 9 IC chips does not exceed a set constant temperature, and destruction due to heat generation can be prevented.

しかしこの一定におさえられる温度は１通常のＩＣで保
証される最大定格よシ也高く設定されるので、長時間こ
の状態にあるとＩＣの信頼度上問題である。またこの設
定温度付近で熱帰還による発振の可能性がある。However, this constant temperature is set higher than the maximum rating guaranteed by a normal IC, so if it remains in this state for a long time, it will pose a problem in terms of the reliability of the IC. There is also a possibility of oscillation due to thermal feedback near this set temperature.

（発明が解決しようとする問題点） 本発明の目的は、上記問題点を解決するため。(Problem to be solved by the invention) The purpose of the present invention is to solve the above problems.

設定された温度以上になると瞬時に安定した出力がでる
ように、ヒステリシスを持たせた熱検知回路を提供しよ
うとするものである。The purpose is to provide a heat detection circuit with hysteresis so that a stable output is instantaneously produced when the temperature exceeds a set temperature.

（問題点を解決するための手段） 本発明によれば、温度検出用トランジスタの出力電極と
入力電極との間に正帰還回路全般けた熱検知回路を得る
。(Means for Solving the Problems) According to the present invention, a heat detection circuit including a positive feedback circuit between the output electrode and the input electrode of a temperature detection transistor is obtained.

（実施例） 次に１図面を参照して１本発明ｔよシ詳細に説明する。(Example) Next, the present invention will be explained in detail with reference to the drawings.

第１図は１本発明の一実施例である。同図において第３
図の従来例と同等の働きをするものは。FIG. 1 shows an embodiment of the present invention. In the same figure, the third
What works the same as the conventional example shown in the figure?

同一の符号を付した。Ｒ１’＝　Ｒ５は抵抗、Ｑｌ。The same symbols are given. R1' = R5 is a resistance, Ql.

Ｑ、はＮＰＮ型トランジスタである。Q is an NPN type transistor.

電源■。０が抵抗孔１とＲ，にょシ分割された電圧がト
ランジスタＱ１０ベースへ加えられ、その電圧■８は、 となる。この電圧ＶＢヲ常温でトランジスタＱ１が遮断
状態となるように選ぶと、この時トランジスタＱ１が導
通してトランジスタＱ１のエミッタ電圧■８は、 ｈ　　　：Ｑｓの電流増幅率 Ｂ２ ＶＢＢ２　：Ｑ２のベース・エミッタ間電圧となる。ト
ランジスタＱ１が導通するためのべ一スエミ、り間電圧
■ＢＢｏＮは負の温度係数を持ち。Power ■. 0 is divided by resistor hole 1 and R, and a voltage divided by R is applied to the base of transistor Q10, and the voltage 8 is as follows. If this voltage VB is selected so that the transistor Q1 is in a cut-off state at room temperature, the transistor Q1 is conductive at this time, and the emitter voltage of the transistor Q1 is as follows: h: Current amplification factor of Qs B2 VBB2: Base-emitter of Q2 voltage between the two. The base emitter voltage BBBoN for transistor Q1 to conduct has a negative temperature coefficient.

高温になるとベース・エミ、り間電圧ｖＢＥｏＮは小さ
くな力、　Ｖ　−Ｖ　＞　Ｖ　　　　になると、トラＢ
　　　　ＲＢＢＯＮ ンジスタＱ１のコレクタ電圧が下刃始め、トランジスタ
Ｑｌのエミッタ電圧も下る。すなわち正帰還がかがシ、
トランジスタＱＩは完全［４通となり保護回路を動作さ
せる。その後ＩＣチップの温度が下がりＶ＜Ｖ　　　　
Ｋなると、トランジスタＢ　　　　ＢＥＡＮ ９里が遮断し、トランジスタＱ２が導通状態となって熱
検知回路は復帰する。すなわち、動作湯度ＴｏＮ　と復
帰温度Ｔ。ＦＦは次のようになる。When the temperature rises, the base-emitter voltage vBEoN becomes a small force, and when V −V > V, the traverse B
RBBON The collector voltage of transistor Q1 starts to drop, and the emitter voltage of transistor Ql also drops. In other words, positive feedback is
Transistor QI becomes complete [4] and operates the protection circuit. After that, the temperature of the IC chip decreases and V<V
When the temperature reaches K, transistor BBEAN9 is cut off, transistor Q2 becomes conductive, and the heat detection circuit is restored. That is, the operating hot water temperature ToN and the return temperature T. FF is as follows.

ＶＢＢｌ：Ｑｉのベース・エミッタ間電圧（２５℃）Δ
■ＢＢ：■ｏの温度係数（約−２ｍＶ／　”Ｏ）このよ
うに、トランジスタＱ！の正帰還作用によって、トラン
ジスタＱ１はＶＢ−■８〉ＶＢＢｏＮとなると急速にト
ランジスタＱ！が導通状態に切り変力、その後ＶＢ＜ｖ
ＢＦ、ｏＨになるまでは安定した出力を生じるので、か
かる熱検出回路全ＩＣの保Ｗ！ｉ＠路に適用すると、発
熱を確笑に制限でき。VBBl: Qi base-emitter voltage (25°C) Δ
■BB: ■Temperature coefficient of o (approximately -2mV/''O) In this way, due to the positive feedback effect of transistor Q!, when transistor Q1 reaches VB-■8>VBBoN, transistor Q! is rapidly turned off. Inotropy, then VB<v
Since a stable output is produced until BF and oH are reached, all ICs of such heat detection circuits are protected. When applied to i@road, it is possible to limit heat generation to a certain degree.

発振が生じるようなこともなり０ 第２図に本発明の他の実施例を示すものであって、従来
例を示゛す第３図と同等の働き全するものは、同一の符
号を付した。Ｒ１〜Ｅ＋、　、　Ｒ，〜Ｂ８は抵抗、Ｑ
ｓはＮＰＮ型トシトランジスタｓは府型トランジスタで
ある。Other embodiments of the present invention are shown in FIG. 2, and those having the same functions as those in FIG. 3 showing the conventional example are given the same reference numerals. did. R1~E+, , R,~B8 are resistances, Q
s is an NPN type transistor, and s is a square type transistor.

常温では、電源電圧Ｖｃｃ　が抵抗Ｒ１とＲ５とによ多
分割された電圧■１がトランジスタＱ１のベースへ加え
られ、その電圧■１は。At room temperature, a voltage (1) obtained by dividing the power supply voltage Vcc by resistors R1 and R5 is applied to the base of the transistor Q1, and the voltage (1) is.

となる。トランジスタＱ！が導通するためのベースエミ
ッタ間電圧■ＢＢｏＮは負の温度係数を持ち。becomes. Transistor Q! The base-emitter voltage for conduction ■BBoN has a negative temperature coefficient.

高温になるとＶＢ１ｉ！ｏＮは小さくなり、■！〉ＶＢ
ＢｏＮになるとトランジスタＱ１のコレクタ電流が流れ
始め、′Ｆトランジスタ３が導通して、トランジスタＱ
１のベース電圧をさらに上昇させ、正帰還がかかｆｌ）
ランジスタＱ１は完全に導通となシ保護回路全動作させ
る。このとき、トランジスタＱ１のベース電圧■冨は 鳥 となる。その後ＩＣチップの温度が下が”′ｖＢＥＯＮ
が■３以下になると熱検知回路は復帰する。VB1i when it gets high temperature! oN becomes smaller, ■! 〉VB
When it becomes BoN, the collector current of transistor Q1 starts to flow, 'F transistor 3 becomes conductive, and transistor Q1 becomes conductive.
The base voltage of 1 is further increased, and positive feedback is generated (fl)
The transistor Q1 becomes completely conductive and the protection circuit is fully activated. At this time, the base voltage of the transistor Q1 becomes a bird. After that, the temperature of the IC chip decreases.
■When becomes 3 or less, the heat detection circuit returns to normal.

すなわち、動作温度Ｔ　と復帰温度Ｔ。ＦＦ　’Ｎ 次式に示す。That is, the operating temperature T and the return temperature T. FF’N It is shown in the following formula.

ＶＢ　Ｂ　１　：　Ｑ　ｔのペースエミッタ間電圧（２
５℃）ΔＶ　　：Ｖ　　ｏ温度係数（約−２ｍＶ／’０
）ＢＩ！　　　　ＢＥ このように、実施例も第１図の実施例と同様に。VB B1: Qt pace emitter voltage (2
5℃) ΔV: Vo temperature coefficient (approximately -2mV/'0
) BI! BE Thus, the embodiment is similar to the embodiment of FIG.

過熱保護回路を確実にかつ安定に動作させることができ
る。The overheat protection circuit can be operated reliably and stably.

（発明の効果） 以上１本発明の回路によれば、温度に対して応答が早く
、マたヒステリシスを持っているので、雑音による誤動
作、熱帰還による発振のないきわめて良好な過熱保護回
路全簡単な回路構成で実現することができる。(Effects of the Invention) The circuit of the present invention has a quick response to temperature and has hysteresis, so it is an extremely simple overheat protection circuit that does not cause malfunctions due to noise or oscillations due to thermal feedback. This can be realized with a simple circuit configuration.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例を示す回路図、第２図は本発
明の他の冥施例全示す回路図、第３図は従来例を示す回
路図である。 Ｒ１−Ｒ１１・・・・・・抵抗、Ｑｌ　、　Ｑ−・・・
・・・ＮＰＮ型トランジスタ、Ｑ３・・・・・・ＰＮＰ
型トランジスタ、■ｃｃ・・・・・・電源、■ｏ・・・
・・・出力端子。FIG. 1 is a circuit diagram showing one embodiment of the present invention, FIG. 2 is a circuit diagram showing all other embodiments of the present invention, and FIG. 3 is a circuit diagram showing a conventional example. R1-R11...Resistance, Ql, Q-...
...NPN transistor, Q3...PNP
type transistor, ■cc...power supply, ■o...
...Output terminal.

Claims (1)

【特許請求の範囲】[Claims] 温度検出器として動作するトランジスタと、かかるトラ
ンジスタのベース・エミッタ間へ所定の定電圧を印加せ
しめる手段と、かかるトランジスタの出力電極から入力
電極に接続された正帰還手段とを有することを特徴とす
る熱検知回路。It is characterized by comprising a transistor operating as a temperature detector, means for applying a predetermined constant voltage between the base and emitter of the transistor, and positive feedback means connected from the output electrode to the input electrode of the transistor. Heat detection circuit.
JP12870884A 1984-06-22 1984-06-22 Heat detecting circuit Pending JPS618634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12870884A JPS618634A (en) 1984-06-22 1984-06-22 Heat detecting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12870884A JPS618634A (en) 1984-06-22 1984-06-22 Heat detecting circuit

Publications (1)

Publication Number Publication Date
JPS618634A true JPS618634A (en) 1986-01-16

Family

ID=14991462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12870884A Pending JPS618634A (en) 1984-06-22 1984-06-22 Heat detecting circuit

Country Status (1)

Country Link
JP (1) JPS618634A (en)

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