JPS6180860U - - Google Patents
Info
- Publication number
- JPS6180860U JPS6180860U JP16492884U JP16492884U JPS6180860U JP S6180860 U JPS6180860 U JP S6180860U JP 16492884 U JP16492884 U JP 16492884U JP 16492884 U JP16492884 U JP 16492884U JP S6180860 U JPS6180860 U JP S6180860U
- Authority
- JP
- Japan
- Prior art keywords
- sink
- cabinet
- laundry
- washbasin
- view
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000011144 upstream manufacturing Methods 0.000 claims 1
- 238000005406 washing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Domestic Plumbing Installations (AREA)
- Sink And Installation For Waste Water (AREA)
- Rigid Pipes And Flexible Pipes (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16492884U JPS639659Y2 (de) | 1984-10-30 | 1984-10-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16492884U JPS639659Y2 (de) | 1984-10-30 | 1984-10-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6180860U true JPS6180860U (de) | 1986-05-29 |
| JPS639659Y2 JPS639659Y2 (de) | 1988-03-22 |
Family
ID=30722791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16492884U Expired JPS639659Y2 (de) | 1984-10-30 | 1984-10-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS639659Y2 (de) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9431249B2 (en) | 2011-12-01 | 2016-08-30 | Vishay-Siliconix | Edge termination for super junction MOSFET devices |
| US9484451B2 (en) | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
| US9508596B2 (en) | 2014-06-20 | 2016-11-29 | Vishay-Siliconix | Processes used in fabricating a metal-insulator-semiconductor field effect transistor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5391523B2 (ja) * | 2007-03-22 | 2014-01-15 | 順一 三島 | 太陽エネルギ受恵体装置 |
-
1984
- 1984-10-30 JP JP16492884U patent/JPS639659Y2/ja not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9484451B2 (en) | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
| US9431249B2 (en) | 2011-12-01 | 2016-08-30 | Vishay-Siliconix | Edge termination for super junction MOSFET devices |
| US9508596B2 (en) | 2014-06-20 | 2016-11-29 | Vishay-Siliconix | Processes used in fabricating a metal-insulator-semiconductor field effect transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS639659Y2 (de) | 1988-03-22 |