JPS618040B2 - - Google Patents
Info
- Publication number
- JPS618040B2 JPS618040B2 JP23282082A JP23282082A JPS618040B2 JP S618040 B2 JPS618040 B2 JP S618040B2 JP 23282082 A JP23282082 A JP 23282082A JP 23282082 A JP23282082 A JP 23282082A JP S618040 B2 JPS618040 B2 JP S618040B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23282082A JPS59121190A (en) | 1982-12-25 | 1982-12-25 | Apparatus for preparation of ribbon crystal of silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23282082A JPS59121190A (en) | 1982-12-25 | 1982-12-25 | Apparatus for preparation of ribbon crystal of silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59121190A JPS59121190A (en) | 1984-07-13 |
| JPS618040B2 true JPS618040B2 (en) | 1986-03-11 |
Family
ID=16945286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23282082A Granted JPS59121190A (en) | 1982-12-25 | 1982-12-25 | Apparatus for preparation of ribbon crystal of silicon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59121190A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0398863U (en) * | 1990-01-30 | 1991-10-15 |
-
1982
- 1982-12-25 JP JP23282082A patent/JPS59121190A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0398863U (en) * | 1990-01-30 | 1991-10-15 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59121190A (en) | 1984-07-13 |