JPS6180188A - Drive circuit substratefor display and manufacture thereof - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a drive circuit board for a display device in which switching elements are arranged in a matrix, and a method for manufacturing the same.

[Technical background of the invention and its problems]

Electroluminescence, light emitting diode.

Display devices such as plasma, fluorescent display tubes, and liquid crystal display devices can have thinner display parts, and are in increasing demand for use in measurement instruments, office equipment, computers, and other terminal display devices, or special display devices. . Among these, electroluminescence and liquid crystal display devices that use switching element matrix arrays of thin film transistors have attracted attention as display devices because they can reduce power consumption and cost, and have been developed in various places in recent years ( For example, IEEE
transactions on Electron D
evices Vol ED-20, No. 11,
November 1973, PP 995-
1001 #sho).

Materials for such switching transistors include St+CdSe in crystalline, polycrystalline, and amorphous states;
Te, CdS, etc. are used. Among these, thin film technology for polycrystalline semiconductors and amorphous semiconductors allows for low-temperature processes, making it possible to form active matrix elements of switching transistors even on substrates that need to be handled at relatively low temperatures, such as glass substrates. A low-cost, large-area display device has been put into practical use.

FIG. 5 is a circuit diagram of a display device using a general thin film transistor array. address layout + b4ul) (1
1, 11□, . . . 11n) are thin film transistors (1i gate electrodes are commonly driven,
The data wiring a (12,, 12□...12.) is a surface 1 on the first electrode of the iJ + replica transistor μ arranged in the vertical direction.
Give Elephant 1 Nishi. Each of the thin film transistors (1) is used for each picture system corresponding to each intersection of the address wiring 1υ and the data wiring @0, and the valley drain electrode is also connected to the capacitor ζ (display element 1i) along with the display element u9. □□
□ is, for example, a liquid crystal or an electroluminescent element. Taking a liquid crystal display device as an example, address distribution e.
n (lυ.

Data distribution + JtlJ, transistor u4 and caber 7
The driving circuit 62 is composed of a drive circuit #5 substrate on which a crystal layer I is integrated and a substrate facing the same on which a transparent layer is formed on the entire surface, and a night crystal layer 62 is sandwiched therebetween. In addition, the ON-oFF characteristics of the thin film transistors used in the thin film transistors used here have been improved, and Yayabanta (Yayabanta), which is a subsidiary company (even without l, is substantially
: It has become possible to retain the written image information for a light minute longer using only the capacity of the liquid crystal itself, which is the main function of the display element.

In this way, active matrix display devices adopt a line sequential scanning method in which image data for the knee line is written every time the address wiring is scanned. This allows for easy-to-see images.

By the way, examples of semiconductor thin films constituting thin film transistors include a-8L (amorphous silicon) and P-3.
i (polysilicon), 5i02 film (silicon disposed film) or SiNx film (silicon nitride film) as the insulating film, transparent conductive film such as ITO as the pixel electrode, and Mo etc. as the metal that can make ohmic contact with the ITO. The processing of these four films has changed from conventional patterning techniques using wet chemicals to CDE (chemical, dry,
Etching) technology has come into widespread use, and not only has the process been simplified, but the degree of processing has been improved. When forming a matrix array of thin film transistors having such a structure, the following process problems arise.

That is, using Mo as the address wiring in the lower layer, etching is performed using CDE to form an island-like pattern of asi+d attached to predetermined locations of the address wiring through an SiNx film as an insulating film. Immediately after the etching of the 81 film is completed, the underlying SIN and film are also etched. This slight etching of the S LNII film not only causes pinhole defects, but also reduces the thickness of the film, causing problems in the difference between the data layout formed in the subsequent process and the lower layer address layout, s. The stray capacitance increases and the mutual interaction of the four Qi signals becomes weaker.

To deal with this problem, we have developed the thin film semiconductor device of JP-A-58-190042, the matrix-type liquid crystal display device of JP-A-59-43584, and the Television Science Journal Vol.
, 38, No. 4, 1984, PP
In the pull-color LCD TV using an amorphous silicon TPT active matrix described in No. 366-370, a semiconductor thin film is used to prevent short circuits between the wires due to pinholes in the insulating film at the intersections of the X acetic acid and Y wires that are perpendicular to each other through the insulating film. Taking advantage of the fact that the t-floor is an insulating film, a thin conductor film is layered on top of the insulating film at the intersections of these layers. However, the structure of these thin film transistors is similar to that shown in FIG.
As shown in the figure, for example, a gate electrode pattern (21b) and a source electrode pattern ( 25b) are provided, and this part has a pattern (23a) which becomes the channel part of the transistor, and an address wiring J (21a).
) and data distribution #1 (25a), there is absolutely = + I
With ACa (half 4 of the pattern (pb) that becomes the middle layer)
The pattern of this thin film is formed in a complex arrangement pattern. Furthermore, because of the concave or curved patterns, the area of the pixels in the transmissive liquid crystal display device is reduced, and the electrification of the device as a bright and easy-to-read display device is lost.

Furthermore, using these complex patterns, for example, add Cm
15 Within the dog area of about c77L, 2X=2000,
When attempting to construct an ultra-high density active matrix crystal display device with Y = 15uO, it is not only difficult to draw a mask pattern, but also the aperture ratio of the pixels mentioned above is reduced, and mask alignment becomes difficult. It is difficult to do this accurately.

[Purpose of the invention]

This invention was developed in view of the above-mentioned problems (1).It has a structure that can prevent short circuits between multilayer interconnects, and also provides a large-area, high-density display device (1) that prevents mask pattern drawing from occurring in the dark. It is an object of the present invention to provide a drive circuit board for a viewing device and a method for manufacturing the same, which not only improves the aperture ratio of a display section to produce an easy-to-see image.

[Summary of the invention]

That is, in the present invention, poles are formed in the address wiring and the pixel 1 that are in contact with the first layer l1iIi of the transparent glass substrate that is the basis of the seven drive circuit board for the display device. A plurality of these address wirings are provided at predetermined repeating intervals, and at least one of the ends thereof has a wide address wire I1.
It has 0 patterns.

An insulating film is formed on a part of the valley address wiring 5tI10 pattern and on the entire surface except for the valley-wire electrode. On each address wiring (; indicates a plurality of semiconductor thin film island patterns are formed through this insulating film.On each semiconductor thin film island pattern, there is a data wiring perpendicular to the lower layer address wiring and a data wiring connected to this data wiring. Parallel short strip-shaped drain electrodes are formed. A plurality of these data stacks are provided at a predetermined repeating interval, and at least one of the ends thereof has a wide data wiring rvi I10 pattern. Each of the drain electrodes has one end connected to the pixel 9.
By contacting another person, a connection is established all at once. The island pattern of the semiconductor thin film is formed along the extension direction of the underlying address wiring, and is slightly wider than the width of the address wiring or the width of the address wiring, and is formed by repeating the data wiring. It has a predetermined length that is substantially shorter than the spacing.

Furthermore, this display device drive circuit board includes address wiring and data wiring that constitute a matrix play within the display section, excluding the wiring I10 pattern in the peripheral area.

Each of the drain electrode, one pixel electrode, the thin film semiconductor island pattern, and the opening pattern of the insulating film is formed of only a cylindrical turn.

〔Effect of the invention〕

According to the present invention, drawing of a mask pattern for producing a large-area, ultra-high-density active matrix display device is not only significantly simpler and more durable, but also increases the aperture ratio of pixel cells in the display section.

Furthermore, since the address wiring and the pixel electrode pattern are made using the same mask, this process can be shortened, and mutual short circuits can be prevented. Since data lines and drain electrodes are formed in the holes during alignment treatment before liquid crystal cell injection, if rubbing treatment is performed along these turns (;), defects will not occur.

[Embodiments of the invention]

Embodiments of the present invention will be described below using FIG. 1 tartbl.

First, in the first embodiment, the plan view of Hal in FIG.
In the cross-sectional view of Fig.
υ and about 2,000 Mo films 4 are continuously deposited by vacuum evaporation or sputtering.

Next, apply a photoresist (not shown) on this Mo film (two layers).
~ Io film I24 and TO film (2 layers are continuously etched to form an address wiring C23 & of approximately 10 μm width)
At the end of this address wiring, an I10 pattern (23b) of about 200 μm extends around the matrix array display area.
and the pixel electrode V infiltration.

Next, after removing this photoresist, a silicon nitride film of approximately 2000λ was deposited on these surfaces by CVD.
A photoresist pattern is formed on the image center and the address wiring I10 pattern (xb).
) on each Mo
Expose the membrane 4. After removing this resist, do the following (
Approximately 3,000 A-8i glands were prepared by CVD and a-3T was prepared using the same photoresist (lA not shown).
An island-like pattern η of the film is formed.

Next, after removing this photoresist, a MO film 1 with a thickness of υ 1000 A is formed by vacuum evaporation or sputtering.
2Q and an aluminum film e2 with a thickness of 1 μm are successively deposited and a photoresist pattern is applied again to form a data wiring (30a) passing over the a-8t film island pattern 1jrI and an I10 pattern (28b) of this data wiring. , a short spiky drain electrode extending to I2υ to the pixel electrode on the a-8i film island pattern (27) parallel to this data wiring (rg<30h), and a short jagged drain electrode on the JiI10 pattern (23b) in the address wiring. Address arrangement ml10 dragon/divine (Otsu C)
form.

This aluminum film (5) and the MoI film (24) on the pixel electrode are removed by continuous etching of 40 vA, and the ITO film (21) below is etched until 40% of the ITO film (21) is exposed. The driving circuit board for the crystal display device is completed. After this, polyimide resin or the like is formed on these surfaces, and then the surface is subjected to a rubbing treatment, and a transparent 4 A screen film is formed and a liquid crystal is sandwiched between the two substrates to complete a liquid crystal display device.

Next, a second embodiment of the present invention will be described.

First, address distribution f, , mail (23
a), 10 patterns of address wiring (23b) and pixel electrode Q4) are formed. Next, a silicon nitride film with a thickness of about 2000^ and an A-8L film with a thickness of about 300OA are deposited by CVD.
Continuously adheres by method. Then, a photoresist is formed on the pixel 11 and the address wiring RFMI10 pattern (23b) on the A-8L film and the silicon nitride film (
) is etched by ODE.

Then, the photoresist is removed, a different photoresist is formed again, and the A-81 film is etched to form an island pattern (c) on the lower layer address layout (C23&) at the upper layer of the A-8L. After this, see Figure 2 1aj
tb), data wiring made of a multilayer film of Mo film and aluminum film, data wiring I104 ball, drain Amami,
The address arrangement I101E pole is formed to complete the display device drive circuit board.

Note that the gate insulating film used in the above embodiment is not limited to the silicon nitride film, but may also be an insulating film such as 5i01 applied by low-temperature CVD or Ta0z+ 5lit applied by sputtering. Also, ITO used as address wiring
The metal film on the film may be made of Mo i = Isozu Cr or Ti.

Moreover, the size of the pixel electrode and the possibility of electrical isolation from the address wiring are 1. , ] If the distance is maintained, there is no problem even if the pattern protrudes directly under the data wiring. In addition, the length of the island pattern of the semiconductor film formed on the address wiring can be determined by maintaining the distance between the extended /4 island patterns so that they do not touch each other. It may have a length close to the return interval.

stomach.

Therefore, even if some mask misalignment occurs, an active matrix array can be constructed without any problem.

Further, the third embodiment of the present invention is shown in Fig. 2 (a) and tb).
.

Figure 3 la) (b) + and Figure 2 laj fb) (c
I will explain E3Ar using a modification of di tel.

First, in the plan view of FIG. 2 1aj and the cross-sectional view C2 of 21tbl, a transparent 4-layer film of, for example, ITO (indium tin oxide) is coated on a transparent insulating substrate 5G made of a glass plate with a thickness of approximately one line. A layer of about 200 OA was applied using a vacuum evaporation method, and a photoresist pattern was formed on this film to form a transparent conductive film pattern 6υ for address arrangement and a pixel electrode o.
3 was inaugurated. After removing the photoresist pattern, an opaque metal of, for example, Δ10 is deposited on these surfaces by vacuum evaporation or sputtering to approximately 1tJOOA.
A new photoresist pattern is deposited and a chemical etching process is performed to create an opaque metal pattern for the address area. After removing the photoresist pattern again, an insulating film 1541 made of, for example, Sin: is deposited using a sputtering method or a CVD (chemical paper deposition) method.
A film thickness of A is applied to the surface. Then, a third photoresist pattern is formed to form the insulating film 6 on the pixel electrode (, ) lJ.
Make holes □□□ in the insulating film on the shaft. Next, after removing the photoresist pattern, a semi-consolidated thin film made of, for example, a-3T (amorphous silicon film) is deposited by the CVD method, and a fourth photoresist pattern is formed in the same manner to form a semiconductor thin film island pattern 61A. Next, after removing this photoresist pattern, an AVIO film of about 1,000 # and an aluminum film of about 1 μm in thickness were successively deposited using the A blank evaporation method or sputtering method, and a fifth photoresist pattern was applied. Data distribution 41.57)
Then, a drain electrode (51) is formed which connects the source electrode which becomes the convex part of this data arrangement (+J+j7), the semiconductor thin film island pattern area and the pixel electrode area, and forms a drain electrode (51) for the active matrix display device. The drive circuit board can be fabricated.

After that, these surfaces are coated with a polyimide film, etc., and the surfaces are subjected to rubbing treatment, a transparent conductive film is formed on the opposite substrate, and night crystals are formed in the gap between the two substrates. By sandwiching them, a transmissive liquid crystal display device is completed.

Next, regarding the fourth embodiment of the present invention, FIG.
). First, in the same manner as in the above-mentioned method, a transparent conductive layer is attached to the top of the insulating substrate 60. A transparent conductor group Oυ for address boat arrangement is formed using photoresist. Next, an MOJ pattern is attached to the surface, and an opaque metal pattern for address arrangement is formed, and an insulating film is attached thereto, with the gaps formed. Next, a conductive thin film is deposited and a semiconductor thin film island-shaped barrier 6) is formed using photoresist. After this, a transparent magnetically sensitive film is attached, and the pixel electrode Q is similarly coated with photoresist.
io on the insulating film (2). Then move on to the next step.
and aluminum are successively deposited using photoresist to form the data arrangement 4Mt57), the drain electrodes 9), and complete the matrix play of the thin film transistor. In addition, this Figure 3ial and Figure 3 (
b) At 4=, the pixel voltage 4152 includes address acid resistance -!
The magnetically conductive film pattern A has a positive nine portions on υ with an insulating film Q in between. In this way, by configuring the address wiring with a wide transparent magnetic conductive film pattern and a narrower opaque magnetic film pattern, it is possible to obtain a thin address wiring that is effective in preventing step breaks in the insulating film. Even in large-screen maturing devices, it is possible to substantially reduce the resistance component of this address arrangement and increase the image accumulation product, that is, the aperture ratio of the pixel cells. .

It is something.

Next, a modification of the present invention will be explained using FIG. 4; a) to +el. FIG. 4 tal shows a plan view of the drive circuit board for a display device, in which the transparent conductive film pattern line υ for address wiring is shortened and six opaque metal patterns for address wiring are placed on the bottom. is running.

This address wiring is then connected via an insulating film (not shown).
The data line perpendicular to urine, -〇〇, intersects only on the narrow opaque hammer pattern. Therefore, the stray capacitance at the intersection between the address placement pitch and the Deme distribution pitch can be reduced.

In FIG. 4, tb+ shows an address pattern, and a transparent 4-metal film for - has a short strip-shaped opaque metal pattern 15 running on the turn φυ. The data distribution sphere orthogonal to this address wiring intersects only on the transparent conductive film pattern. In this case, Figure 4:
Unlike in a), by reducing the thickness of the transparent layer, it is possible to eliminate the need to cut off the insulating film and the data acid resistant film 60. As shown in Figure 4 tel and Figure 4 (d), the position relative to the transparent 4-Section pattern glue for address wiring should not necessarily be exposed to the center, so the It does not matter if it is formed protruding.

Further, as shown in the cross-sectional view of FIG. 4, the same effect can be obtained even if a transparent four-layer membrane -v is formed on the transparent metal pattern.

[Brief explanation of the drawing]

FIG. 1 is a plan view of a drive circuit board for a display device showing a first embodiment of the present invention, and its AA', B=B' cut-away view, and FIG. 2 is a third embodiment of the present invention. FIG. 3 is a plan view showing a fourth embodiment of the present invention and its x-x' cross-sectional view.
4 is a plan view showing a modification of the present invention, and FIGS. 5 and 6 are views showing a conventional example.・Transparent insulating substrate, 21, 51...Transparent 4-layer pattern, 22, 28.5
3... Opaque hammer pattern, Sae, 52... Pixel electrode, 6.54... Insulating film, 26, 55... Opening in insulating film, 27, 56... Island pattern of semiconductor thin film ,30a,
57... Data distribution, 31, 59... Drain Togoku, agent Patent attorney Nori Kon On (right) (and 1 other person) No.
2 Figures! 50 , j/ , u'W, 3 Figure x-x'tlia times Y-Y"

Claims (7)

[Claims] (1) A plurality of address wirings formed on one main surface of an insulating substrate, a plurality of semiconductor thin film island patterns formed on the address wirings with an insulating film interposed therebetween, and one side of the semiconductor thin film island pattern. The address wiring formed on the end includes a plurality of data wirings perpendicular to each other via an insulating film, a plurality of drain electrodes formed on the other end, and a plurality of data wirings formed electrically connected to the drain electrodes. In an active matrix type display drive circuit board comprising a transparent pixel electrode pattern, the address wiring includes a transparent conductive film in contact with the surface of the insulating substrate, an opaque metal film overlapping the transparent conductive film, and A drive circuit board for a display device, characterized by having a two-layer structure. (2) The plurality of transparent pixel electrode patterns are provided in contact with the surface of the insulating substrate, and an opaque metal film is provided on a part of the surface of the transparent pixel electrode pattern, and an opaque metal film is provided on a part of the surface of the transparent pixel electrode pattern. 2. The drive circuit board for a display device according to claim 1, wherein the drain electrode is provided at the drain electrode. (3) The semiconductor thin film island pattern is formed on the address wiring via an insulating film, and has a line width of the address wiring or a width slightly wider than the line width of the address wiring, and a width of the plurality of data. 2. The drive circuit board for a display device according to claim 1, having a length substantially shorter than the repeating interval of the wiring. (4) The pixel electrode, the drain electrode, and the semiconductor thin film island pattern are composed of only rectangular patterns, and the pixel electrode, the drain electrode, and the semiconductor thin film island pattern are composed of only rectangular patterns, and at least the electrode terminals provided around the drive circuit board are included in the display matrix array. 2. A drive circuit board for a display device according to claim 1, wherein the address wiring and the data wiring have a straight pattern without a concavo-convex pattern. (5) The address wiring has a double structure of a transparent conductive film pattern and an opaque metal film pattern narrower than the transparent conductive film pattern. A drive circuit board for a display device as described in 1. (6) The transparent conductive film pattern and the opaque metal film pattern constitute one address wiring by combining a plurality of patterns of a predetermined length. Drive circuit board for display devices. (7) A step of sequentially attaching a transparent conductive film and a first metal film on one main surface of an insulating substrate, and forming the inside of the pixel part electrode pattern and matrix array by photolithography. A step of forming an address wiring and an electrode terminal portion extending from the address wiring and provided around the substrate, a step of attaching an insulating film covering the entire surface of these, and a step of depositing this insulating film using a photolithography technique. forming holes on the pixel electrode pattern and on the electrode terminal portions of the address wiring; depositing a semiconductor thin film on the surfaces of these patterns; and depositing this semiconductor thin film on the address wiring by photolithography. a step of forming a plurality of island-like patterns located on the surface, a step of attaching a second metal film on this surface, and a step of attaching the second metal film to the address line through an insulating film by photolithography. Data wiring and its extraction electrode that are perpendicular to each other and pass over the semiconductor thin film island pattern, and a drain electrode that extends from a part of the pixel electrode pattern and reaches the semiconductor thin film island pattern, and the address wiring electrode. A step of forming a wiring pattern to cover the opening of the insulating film of the terminal portion, and removing the first metal film of the pixel electrode pattern using this second metal film pattern as a mask, and removing the transparent conductive film of the pixel electrode. 1. A method of manufacturing a display device drive circuit board, comprising the step of exposing.