JPS6179240A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6179240A
JPS6179240A JP19962484A JP19962484A JPS6179240A JP S6179240 A JPS6179240 A JP S6179240A JP 19962484 A JP19962484 A JP 19962484A JP 19962484 A JP19962484 A JP 19962484A JP S6179240 A JPS6179240 A JP S6179240A
Authority
JP
Japan
Prior art keywords
wiring
chip
semiconductor device
semiconductor
probe test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19962484A
Other languages
Japanese (ja)
Inventor
Norihiro Fujita
藤田 典裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Computer Engineering Co Ltd
Original Assignee
Hitachi Ltd
Hitachi Computer Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Computer Engineering Co Ltd filed Critical Hitachi Ltd
Priority to JP19962484A priority Critical patent/JPS6179240A/en
Publication of JPS6179240A publication Critical patent/JPS6179240A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To effect a probe test in a short time easily by arranging a member for wiring shortage and a wiring for shortage previously on a mother chip. CONSTITUTION:A material for wiring shortage for probe test 5 and a wiring 6 are arranged on a mother chip 2 thereby shortening the all wirings 4. The member 5 is formed with a little smaller area than that of a semiconductor chip 3. Nextly a terminal 7 of a measuring device is brought in contact with wiring terminals P1 - P2, P2 - P3, P1 - P3... to effect the energizing test of those. After the energizing of those is confirmed, the part designated by a dot and dash line A, i.e., a part of the wiring 6 is removed to prevent the energizing among the wirings. By thus arranging the member 5 and the wiring 6 previously on the chip 2, the probe test can be made in a short time easily.

Description

【発明の詳細な説明】 r技術分野) 本発明は、半導体装置に係り、特に、複数の半導体チッ
プを塔載したマルチチップ型半導体装置におけるプロー
ブナス1−技術手段に適用して有効な技術に関するもの
である・ 〔背景技術〕 マルチチップ型半導体装置は、シリコン配線基板(以下
、マザーチップという)上にフリ・ノブチップ方式のフ
ェイスダウンボンディングにより、半導体チップを多数
実装する。このため、電極数が、例えば、100乃至3
00個にもなる。
Detailed Description of the Invention (rTechnical Field) The present invention relates to a semiconductor device, and particularly relates to a technique that is effective when applied to a probe device 1-technical means in a multi-chip semiconductor device mounted with a plurality of semiconductor chips. [Background Art] A multi-chip semiconductor device mounts a large number of semiconductor chips on a silicon wiring board (hereinafter referred to as a mother chip) by face-down bonding using a free-knob chip method. Therefore, the number of electrodes is, for example, 100 to 3.
There are as many as 00 pieces.

このように電極数が多くなると、マザーチップに設けら
れた配線数も多くなり、その配線の断線等を試験するプ
ローブテストが非常に困難であった。
As the number of electrodes increases, the number of wires provided on the mother chip also increases, making it extremely difficult to perform a probe test to test for disconnections in the wires.

なお1階層構造髪利用したシリコン・オン・シリコン方
式のマルチチップ型半導体装置、すなわち、マザーチッ
プを用いたマルチチップ型半導体装置は、日経マグロウ
ヒル社発行[日経エレクトロニクスJ、1984年6月
11日号、n o、2、P136に記載されている。
A silicon-on-silicon type multi-chip semiconductor device using a single-layer structure, that is, a multi-chip semiconductor device using a mother chip, is published by Nikkei McGraw-Hill [Nikkei Electronics J, June 11, 1984 issue] , no. 2, P136.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、マザーチップ4二に設けられている配
線のプローブテストを容易に行うことができる技術を提
供することにある。
An object of the present invention is to provide a technique that allows easy probe testing of wiring provided on a mother chip 42.

本発明の他の目的は、マルチチップ型半導体装置におい
て、マザーチップ上に設けられている配線のプローブテ
ストの作業能率を向上させることができる技術を提供す
ることにある。
Another object of the present invention is to provide a technique that can improve the efficiency of probe testing of wiring provided on a mother chip in a multi-chip semiconductor device.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述及び添付図面によって明らかになるであろ
う。
The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[発明の概要] 本願において開示される発明のうち、代表的なものの概
要を簡111に説明すれば、下記のとおりである。
[Summary of the Invention] Among the inventions disclosed in this application, a brief outline of typical inventions is as follows.

すなオ)ち、半導体チップを塔載するマザーチップに半
導体チップよりも少し小さい配線短絡用部材及び短絡配
線を配設し、プローブテスト後に前記短絡配線と配線と
を切り離す構成にすることにより、マザーチップLに設
けられている配線のプローブテストを容易に行うことが
でき、かつ、その作業能率を向−卜させることができる
ようにしたものである。
In other words, by arranging a wiring shorting member and shorting wiring that are slightly smaller than the semiconductor chip on the mother chip on which the semiconductor chip is mounted, and separating the shorting wiring from the wiring after the probe test, This makes it possible to easily perform a probe test on the wiring provided on the mother chip L, and to improve the work efficiency.

以下、本発明の構成について、実施例とともに説明する
Hereinafter, the configuration of the present invention will be explained along with examples.

なお、全回において、同一の機能を有するものは同一の
符号を付け、その繰り返しの説明は省略する。
In addition, in all the episodes, parts having the same functions are given the same reference numerals, and repeated explanations thereof will be omitted.

〔実施例〕〔Example〕

第1図乃至第3図は、本発明の一実施例の半導体装置を
説明するための図であり、第1図は、その半導体装置の
リードピン及び配線を省略した全体概略構成を示す斜視
図、第2図は、その半導体装置のマザーチップ−Lに設
けられている配線パターンを示す平面図、第3図は、第
1図に示す配線パターンを短絡用部材及び短絡配線で短
絡した状態を示す平面図である。
1 to 3 are diagrams for explaining a semiconductor device according to an embodiment of the present invention, and FIG. 1 is a perspective view showing the overall schematic configuration of the semiconductor device with lead pins and wiring omitted; FIG. 2 is a plan view showing the wiring pattern provided on the mother chip L of the semiconductor device, and FIG. 3 shows the wiring pattern shown in FIG. FIG.

第1図において、1はパッケージ基板、2は配線を施し
たマザーチップ、3は半導体チップである。
In FIG. 1, 1 is a package substrate, 2 is a mother chip with wiring, and 3 is a semiconductor chip.

第2図及び第3図において、4はマザーチップ=3− 2トに設けられている配線であり、信号線、電源線、グ
ランド線等からなっている3、この配線4は例えばアル
ミニウム(AQ)、銅(Cu )等の金属線を用いる。
In FIGS. 2 and 3, 4 is a wiring provided on the mother chip (3-2), which consists of a signal line, a power supply line, a ground line, etc. ), copper (Cu), or other metal wires.

P、乃至P8及びQ、乃至Q12は配線端子(パッド)
、5はマザチップ2上に設けられた配線短絡用部材であ
り、半導体チップ3よりも少し小さい面積になっている
。配線短絡部材5は、例えばアルミニウム(AQ)、銅
(Cu )等の金属薄膜を用いる。この配線短絡用部材
5の形状は、例えば四角形2円形、リング状等の短絡さ
れた形のものであればどのようなものでもよい。
P, to P8 and Q, to Q12 are wiring terminals (pads)
, 5 is a wiring shorting member provided on the mother chip 2, and has an area slightly smaller than that of the semiconductor chip 3. The wiring shorting member 5 is made of a metal thin film such as aluminum (AQ) or copper (Cu). The wiring short-circuiting member 5 may have any shape as long as it is short-circuited, such as a square, two circles, or a ring.

(iは短絡配線であり、例えばアルミニウム線、銅線等
を金属線を用いる。7は測定器の端子である。
(i is a short-circuit wiring, for example, a metal wire such as an aluminum wire or a copper wire is used. 7 is a terminal of the measuring instrument.

まず、第3図に示すように、プローブデスl−用配線短
絡用部材5及び配線6をマザーチップ2」二に設けて全
部の配線4を短絡させておく。次に、配線端子P I 
P2 、P2  P3 、P+  Ps ・・・に81
す定器の端子7を当ててそれらの導通テス1へを行う。
First, as shown in FIG. 3, a wiring short-circuiting member 5 for the probe terminal 1 and wiring 6 are provided on the mother chip 2'' to short-circuit all the wiring 4. Next, the wiring terminal P I
P2, P2 P3, P+ Ps...81
Test 1 for continuity by applying the terminal 7 of the meter.

これらの導通が確認された後に、一点鎖線Aで囲まれた
個所、すなわち、短絡配線6の一4一 部をエツチング等で取り除いて各配線間を非導通にする
。その後、配線端子PI  P2.P2  P3、P+
  Pa ・・・に測定器の端子7を当ててそれらの導
通がないことを確認する。
After these conductions are confirmed, the portion surrounded by the dashed line A, that is, a portion of the short-circuit wiring 6 is removed by etching or the like to make the wirings non-conductive. After that, wiring terminal PI P2. P2 P3, P+
Apply terminal 7 of the measuring device to Pa... and confirm that there is no continuity between them.

前述のように配線短絡用部材5及び短絡配線6をあらか
じめマザーチップ2上に設けておくことにより、プロー
ブテス1〜を短時間で容易に行うことができるので、そ
の作業能率を向」ニさせることができる。
By providing the wiring shorting member 5 and the shorting wiring 6 on the mother chip 2 in advance as described above, the probe tests 1 to 1 can be easily performed in a short time, thereby improving the work efficiency. be able to.

なお、前記配線短絡用部材5及び短絡配線6の形成工程
は、それと配線4を同一金属とすることにより、配線4
を形成する時に同時に形成することができるので、製造
工程は増加しない。
In addition, in the process of forming the wiring shorting member 5 and the shorting wiring 6, the wiring 4 and the wiring 4 are made of the same metal.
Since it can be formed at the same time as forming the , the number of manufacturing steps is not increased.

〔効果〕〔effect〕

以上説明したように、本願で開示した新規な技術によれ
ば、次に述べるような効果を得ることができる。
As explained above, according to the new technology disclosed in this application, the following effects can be obtained.

(1)半導体チップを塔載するマザーチップに半導体チ
ップよりも少し小さい配線短絡用部材及び短絡配線を配
設し、プローブテスト後に前記短絡配線と配線とを明り
淵す構成にすることによll、マザーチップ1−に設け
られている配線のプL1−ブテス1へを短時間で容易に
fiうことかできる。
(1) By arranging a wiring shorting member and shorting wiring slightly smaller than the semiconductor chip on the mother chip on which the semiconductor chip is mounted, and arranging the shorting wiring and the wiring after the probe test. , it is possible to easily connect the wiring provided on the mother chip 1- to the terminal L1-butes 1 in a short time.

(2)前記(])により、ブローブテス1−の作業能率
を向1−.させることかできる。
(2) By using the above (]), the work efficiency of Blobutes 1- can be increased to 1-. I can do it.

以上、本発明を実施例にもとすき具体的に説明したが、
本発明は、前記実施例に限定されるものではなく、その
要旨を逸脱しない範囲において種々変更11「能である
ことはいうまでもない。
The present invention has been specifically explained above using examples, but
It goes without saying that the present invention is not limited to the embodiments described above, and that various modifications can be made without departing from the spirit thereof.

例えば、前記プローブテスト用配線のパターンの形状は
、必要に応じて種々選釈し得ることはいうまでもない。
For example, it goes without saying that the shape of the pattern of the probe test wiring can be varied as necessary.

前記実施例ではマザーチップを配線基板としたが、これ
以外の基板にも本発明を適用できることは勿論である。
In the embodiments described above, the mother chip was used as a wiring board, but it goes without saying that the present invention can be applied to other boards as well.

.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図乃至第3図は、本発明の一実施例の半導体装置を
説明するための図であり、 第1図は、その半導体装置のリードピン及び配線を省略
した全体概略構成を示す斜視図、第2図は、その半導体
装置のマザーチップ−にに設けられている配線パターン
を示す平面図、第3図は、第1図に示す配線パターンを
短絡用部材及び短絡配線で短絡した状態を示す平面図で
ある。 図中、■・・・パッケージ基板、2・マザーチップ、3
・・・半導体チップ、4・・配線、5・・・配線短絡用
部材、6・短絡配線、7・・・測定器の端子、P+乃至
Pa、Q+乃至Q10 ・配線端子(パッド)である。 第  2  図
1 to 3 are diagrams for explaining a semiconductor device according to an embodiment of the present invention, and FIG. 1 is a perspective view showing the overall schematic configuration of the semiconductor device with lead pins and wiring omitted; Fig. 2 is a plan view showing the wiring pattern provided on the mother chip of the semiconductor device, and Fig. 3 shows the wiring pattern shown in Fig. 1 short-circuited with a short-circuit member and a short-circuit wiring. FIG. In the figure, ■...Package board, 2. Mother chip, 3
. . . Semiconductor chip, 4. Wiring, 5. Member for wiring short circuit, 6. Short circuit wiring, 7. Terminal of measuring instrument, P+ to Pa, Q+ to Q10. Wiring terminal (pad). Figure 2

Claims (4)

【特許請求の範囲】[Claims] 1.半導体チップを塔載する配線用基板に半導体チップ
よりも少し小さい配線短絡用部材及び短絡配線を配設し
、プローブテスト後に前記短絡配線と配線とを切り離す
構造にしたことを特徴とする半導体装置。
1. A semiconductor device characterized by having a structure in which a wiring shorting member and shorting wiring slightly smaller than the semiconductor chip are arranged on a wiring board on which a semiconductor chip is mounted, and the shorting wiring and the wiring are separated after a probe test.
2.前記配線用基板として半導体配線基板を用いたこと
を特徴とする特許請求の範囲第1項記載の半導体装置。
2. 2. The semiconductor device according to claim 1, wherein a semiconductor wiring board is used as the wiring board.
3.前記プローブテスト用配線と配線とを同時に形成可
能な構造にしたことを特徴とする特許請求の範囲第1項
又は第2項記載の半導体装置。
3. 3. The semiconductor device according to claim 1, wherein the semiconductor device has a structure in which the probe test wiring and the wiring can be formed at the same time.
4.前記基板に複数の半導体チップを塔載したことを特
徴とする特許請求の範囲第1項又は第2項記載の半導体
装置。
4. 3. The semiconductor device according to claim 1, wherein a plurality of semiconductor chips are mounted on the substrate.
JP19962484A 1984-09-26 1984-09-26 Semiconductor device Pending JPS6179240A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19962484A JPS6179240A (en) 1984-09-26 1984-09-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19962484A JPS6179240A (en) 1984-09-26 1984-09-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6179240A true JPS6179240A (en) 1986-04-22

Family

ID=16410942

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19962484A Pending JPS6179240A (en) 1984-09-26 1984-09-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6179240A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7148503B2 (en) 2000-10-05 2006-12-12 Matsushita Electric Industrial Co., Ltd. Semiconductor device, function setting method thereof, and evaluation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7148503B2 (en) 2000-10-05 2006-12-12 Matsushita Electric Industrial Co., Ltd. Semiconductor device, function setting method thereof, and evaluation method thereof

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