JPS6177380A - Garnet crystal for wavelength-variable laser - Google Patents
Garnet crystal for wavelength-variable laserInfo
- Publication number
- JPS6177380A JPS6177380A JP19832484A JP19832484A JPS6177380A JP S6177380 A JPS6177380 A JP S6177380A JP 19832484 A JP19832484 A JP 19832484A JP 19832484 A JP19832484 A JP 19832484A JP S6177380 A JPS6177380 A JP S6177380A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- wavelength
- indicates
- compositions
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
Abstract
Description
【発明の詳細な説明】 産業上の利用分骨 本発明は波長可変レーザー用ガーネット結晶に関する。[Detailed description of the invention] Industrial use bone The present invention relates to a garnet crystal for wavelength tunable lasers.
従来技術
従来、Ｃｒ３＋を活性イオンとする波長可変レーザー用
のガーネット結晶としては、数種のものが知られている
が、なかでもＧｄ、５Ｏ２Ｇａ５０ 、２は高いて高価
で、且つ資源的にも限られているスカンジウム（Ｓｃ）
を含んでいる。そのため、結晶が高価になると言う欠点
を有している。Prior Art Several types of garnet crystals for wavelength tunable lasers using Cr3+ as active ions have been known, but among them, Gd and 5O2Ga50,2 are expensive and have limited resources. scandium (Sc)
Contains. Therefore, it has the disadvantage that the crystal is expensive.
発明の目的
本発明はＧｄ５Ｓｃ２Ｇａ、 ０．２の結晶における構
成成分であるＳｃの１部を置換元素の導入によシＳｃの
使用量を少くシ、比較的低置な波長可変レーザー用ガー
ネット結晶を提供せんとするにある。Purpose of the Invention The present invention provides a garnet crystal for wavelength tunable lasers that uses a small amount of Sc and is relatively low-mounted by introducing an element to replace a part of Sc, which is a constituent component of the Gd5Sc2Ga, 0.2 crystal. It is not intended to be provided.
発明の構成
本発明者は前記目的を達成すべく研究の結果、Ｓｃは３
価の陽イオンであるから、置換金属イオンはＳｃの価数
を過不足なく捕うものでなければならないとの考察から
置換可能々陽イオンについて検討を加えた。Structure of the Invention As a result of research to achieve the above object, the inventor found that Sc is 3.
Since it is a valent cation, the substitutable metal ion must be one that captures the valence of Sc in just the right amount, so we investigated the substitutable cation.
の５価金属との組合せによＪ＞、Ｓｃイオンの格舌：点
、を過不足なく埋め、かつ価数を過不足なく補う；・と
゛よいこと二また、完全にＳｃが存在しない組成ま゛で
置換できないことが分った。この知見に基いて本発明を
完成した。In combination with a pentavalent metal, J>, the valence of Sc ions can be filled in just the right amount, and the valence can be compensated in just the right amount. It turns out that it cannot be replaced with . The present invention was completed based on this knowledge.
本発明の要旨は、
Ｏｒ’＋を活性イオンとする波長可変レーザー用媒質結
晶として用いるＧｄ５Ｓｃ２Ｇａ３０ 、２の結晶にお
いて、Ｓｃイオンの１部を、Ｌｉ＋ またはＭｇ
とＴｌ 。The gist of the present invention is that in a crystal of Gd5Sc2Ga30,2 used as a medium crystal for a wavelength tunable laser having Or'+ as an active ion, part of the Sc ions are replaced with Li+ or Mg.
and Tl.
Ｚｒ４＋、 Ｈｆ” 、 Ｎｂ 及びＴａ から選
ばれた単独または２種以上の金属イオンとの組合せによ
シ、結晶内の電価が中和に保たれるように置換したこと
を特徴とする波長可変レーザー用ガーネット結晶にあ６
・ １ゾ・−５：・本
発明において言う、Ｃｒ３＋を活性イオン４す゛トル領
域での螢光が可能になるような電子構造がＧａ３Ｏ１２
はこのような固体媒質であシ、結晶構造はガーネット型
であることは知られている。A wavelength tunable device characterized in that it is substituted with metal ions selected from Zr4+, Hf'', Nb and Ta, either alone or in combination with two or more metal ions, so that the electric charge within the crystal is kept neutralized. Garnet crystal for laser 6
・1zo・-5:・In the present invention, Ga3O12 has an electronic structure that enables Cr3+ to fluoresce in the active ion 4-ton region.
is such a solid medium, and it is known that its crystal structure is garnet type.
本発明における置換後の組成は、
Ｇｄ、５ｃ２−ＸＡｘＧａＳ０１２（ただし、ｘ（２で
ある）で示される。The composition after substitution in the present invention is represented by Gd, 5c2-XAxGaS012 (x (2)).
Ａは′−（Ｂ”＋Ｍｇ ）（ただし、ＢはＺｒ 。A is '-(B''+Mg) (However, B is Zr.
Ｔｉ４＋またはＩ（ｆ を表わす）、これは１モルの
＋３１
Ｓｃ を−モルのＢ４＋と１モルのＭｇ で置換し
、モル数のバランスが置換前後で保たれることを示で表
わすことができる。すなわち、価数を過不足なく補うこ
とが必要である。Ti4+ or I (denoting f), which can be expressed by replacing 1 mole of +31 Sc with - mole of B4+ and 1 mole of Mg, with the balance of moles being maintained before and after the substitution. In other words, it is necessary to compensate for the valence in just the right amount.
このような組成を有する単結晶を育成する方法は、均質
外結晶を育成する方法であればその方法を問わ々い。好
ましくは融液からの育成技術９例この方法の適用に際し
ては、置換組成のガーネット結晶が一致溶融（結晶と融
液とが同じ組成になる）することが望ましい。Any method can be used to grow a single crystal having such a composition as long as it grows a homogeneous outer crystal. Preferably, 9 Examples of Growth Techniques from Melt When this method is applied, it is desirable that garnet crystals of substituted compositions are melted in unison (the crystal and the melt have the same composition).
本発明における結晶組成を利用して単結晶を育成するに
あたシ、必要に応じてＱａ 、 Ｓｒ ｌ Ｅａ＋Ｎａ
＋Ｋ ＋ ＡＪ 、 Ｆｅ 、 Ｖ 、 Ｉｎ ＋ Ｇ
ｏ 、 Ｎｉ ＋ （ｊｕ 、 Ｚｎ、ＳｉまたはＧｅ
の微量成分を配合することによって、単結晶の特性を向
上させることができる。When growing a single crystal using the crystal composition in the present invention, Qa, Sr l Ea + Na as necessary.
+K + AJ, Fe, V, In + G
o, Ni + (ju, Zn, Si or Ge
The properties of the single crystal can be improved by blending the trace components.
発明の効果
本発明のガーネット結晶は従来波長可変レーザー結晶と
して利用が進められているＧｄ、５ｃ２Ｇａ３Ｏ１２結
晶と比べて、格段に安価で、且つ性能的に劣らぬ結晶で
あわ、その結晶の用途であるＣｒ３＋の波長可変レーザ
ーの媒質結晶としての機能を代替し得られる優れた効果
を有する。Effects of the Invention The garnet crystal of the present invention is much cheaper than the Gd, 5c2Ga3O12 crystal, which has been used as a conventional wavelength tunable laser crystal, and is a crystal with no inferior performance. It has an excellent effect of replacing the function as a medium crystal of a Cr3+ wavelength tunable laser.
実施例
実施例１゜
Ｇｄ３Ｓｃ２−ｘＧｄ３５Ｃ２−ｘｚｒｌｘ、２におい
て、Ｘ値が最い無色透明の単結晶を得た。結晶構造はＸ
線によシガーネット型であるととが確認された。Examples In Example 1゜Gd3Sc2-xGd35C2-xzrlx,2, a colorless and transparent single crystal with the highest X value was obtained. The crystal structure is
It was confirmed that it was a cigarette lighter type.
この組成の試料に０．１原子％の（３ｒ を導入し、
集光式フローティングゾーン法によシ淡緑色透明の単結
晶を得た。得られた結晶に水銀ランプの光を照射したと
ころ、波長７００〜９００ ｎｍの範囲にわたる強い螢
光が見られた。これによ！１１ Ｇｄ、５ｃ２Ｇａ３Ｏ
１２と同様に、波長可変レーザー用結晶として利用され
ることが明らかと力った。Introducing 0.1 atomic % (3r) into a sample with this composition,
A pale green transparent single crystal was obtained using the condensing floating zone method. When the obtained crystal was irradiated with light from a mercury lamp, strong fluorescence over a wavelength range of 700 to 900 nm was observed. This is it! 11 Gd, 5c2Ga3O
Similarly to No. 12, it is clear that it can be used as a crystal for wavelength tunable lasers.
実施例２゜
ＧｄＳＳｃ２−ｘＴｉ１ｘＭｇ１ｘＧａ３Ｏ１２におい
て、Ｘ値が最大１．９０までの組成について、以下実施
例１と同様に単結晶を作夛、これらの組成の試料に帆１
原子％のＯｒ’＋を導入し、単結晶を作った。その結果
、実施例１と同様に強い螢光が見られた。Example 2 In GdSSc2-xTi1xMg1xGa3O12, single crystals were prepared in the same manner as in Example 1 for compositions with X values up to 1.90, and samples with these compositions were
Atom % of Or'+ was introduced to produce a single crystal. As a result, similar to Example 1, strong fluorescence was observed.
実施例３゜
Ｇｄ５Ｓｃ２−ｘＧｄ３５ｃ２−ｘＨｆｉｘ、２におい
て、Ｘ値が最大１．８５までの組成について、以下実施
例１と同子％のＯｒ を導入し、単結晶を作った。そ
の結果、実施例１と同様に強い螢光が見られた。Example 3 In Gd5Sc2-xGd35c2-xHfix,2, for a composition with an X value of up to 1.85, the same percentage of Or as in Example 1 was introduced to produce a single crystal. As a result, similar to Example 1, strong fluorescence was observed.
実施例４゜
Ｃｄ、５ｃ２−ｘＮｂｉＸＬｉ叛Ｇａ３０．２において
、Ｘ値が最大１．７０までの組成について、以下実施例
１と同様に単結晶を作り、これらの組成の試料に０６１
原子％のＯｒ を導入し、単結晶を作った。その結果
、実施例１と同様に強い螢光が見られた。Example 4 In Cd, 5c2-xNbiXLi-Ga30.2, single crystals were prepared in the same manner as in Example 1 for compositions with X values up to 1.70, and samples of these compositions were treated with 061
A single crystal was produced by introducing atomic % of Or. As a result, similar to Example 1, strong fluorescence was observed.
実施例５゜
Ｇｄ３Ｓｃ２−ｘＴａ１ｘＬｉ１ｘＧａ５０，２におい
て、Ｘ値が最大１．７０までの組成について、以下実施
例１と同様に単結晶を作り、これらの組成の試料に０．
１原子％のＯｒ を導入し、単結晶を作った。その結
果、実施例１と同様に強い螢光が見られた。Example 5 In Gd3Sc2-xTa1xLi1xGa50,2, single crystals were prepared in the same manner as in Example 1 for compositions with X values up to 1.70, and samples of these compositions were treated with 0.
A single crystal was produced by introducing 1 atomic % of Or. As a result, similar to Example 1, strong fluorescence was observed.
実施例６゜
Ｃｄ３Ｓｃ２−ｘＺｒ２ｘＬｉ叛Ｇａ３Ｏ１２において
、Ｘ値が最大１．６０までの組成について、以下実施例
１と同様に単結晶を作り、これらの組成の試料に０．１
原子％のｃｒ を導入し、単結晶を作った。その結、
悉３実施例１と同様に強い螢光が見られた。Example 6 In Cd3Sc2-xZr2xLi-Ga3O12, single crystals were made in the same manner as in Example 1 for compositions with X values up to 1.60, and samples with these compositions were
A single crystal was produced by introducing atomic percent of cr. As a result,
As in Example 1, strong fluorescence was observed.
実施例７゜
Ｇｄ５Ｓｃ２−ｘＴｉｅｘＬｉｉＸＧａ、 ｏ、 ２に
おいて、Ｘ値が最大１．６５までの組成について、以下
実施例１と同様に単結晶を作り、これらの組成の試料に
帆１原子％のＯｒ を導入し、単結晶を作った。その
結果、実施例１と同様に強い螢光が見られた。Example 7 In Gd5Sc2-xTiexLii introduced and produced single crystals. As a result, similar to Example 1, strong fluorescence was observed.
実施例８゜
Ｇｄ５Ｓ０２−ｘＨｆ２ｘＬｉ１ｘＧａ３０１２におい
て、Ｘ値が最大１．５５までの組成について、以下実施
例１と同様に単結晶を作シ、これらの組成の試料に０．
１原子％のＯｒ を導入し、単結晶を作った。その結
果、実施例１と同様に強い螢光が見られた。Example 8 In Gd5S02-xHf2xLi1xGa3012, single crystals were produced in the same manner as in Example 1 for compositions with X values up to 1.55.
A single crystal was produced by introducing 1 atomic % of Or. As a result, similar to Example 1, strong fluorescence was observed.
実施例９゜
Ｇｄ５Ｓｃ２−ｘＮｂトＭｇりｘＧａ３ｏ１２において
、Ｘ値が最大１．５０までの組成について、以下実施例
１と同様に単結晶を作υ、これらの組成の試料に帆１原
子％のＯｒ を導入し、単結晶を作った。その結果、
実施例１と同様に強い螢光が見られた。Example 9 In Gd5Sc2-xNb, MgxGa3o12, single crystals were produced in the same manner as in Example 1 for compositions with an was introduced to produce single crystals. the result,
As in Example 1, strong fluorescence was observed.
実施例１０゜
様に単結晶を作シ、これらの組成の試料に０．１原子％
のＯｒ３＋を導入し、単結晶を作った。その結ｉ′！ｍ
ＦＪ”１″′″：＊１．−＝＊＊″゛１“″７°ｉ−″
。Single crystals were prepared in the same manner as in Example 10, and 0.1 atom% was added to samples with these compositions.
Or3+ was introduced and a single crystal was made. That conclusion i'! m
FJ"1"'": *1.-=**"゛1""7°i-"
.
実施例１１゜
例１と同様に単結晶を作シ、これらの組成の試料に０．
１原子％のＯｒ を導入し、単結晶を作った。Example 11 Single crystals were grown in the same manner as in Example 1, and samples with these compositions were given 0.
A single crystal was produced by introducing 1 atomic % of Or.
例１と同様に単結晶を作り、これらの組成の試料に０．
１原子％のＪ：３ｒ３＋を導入し、単結晶を作った。Single crystals were made in the same manner as in Example 1, and samples with these compositions were given 0.
1 atomic % of J:3r3+ was introduced to produce a single crystal.
その結果、実施例１と同゛様に強い螢光が見られた。As a result, similar to Example 1, strong fluorescence was observed.
特許出願人 科学技術庁無機材質研究所長ハ・ ：）
ｌ−
目 ｑ、、；Patent applicant: Director of the Institute of Inorganic Materials, Science and Technology Agency, Ha:)
l-th q,,;
Claims (1)
用媒質結晶として用いるＧｄ＿３Ｓｃ＿２Ｇａ＿３Ｏ＿
１＿２の結晶において、Ｓｃイオンの１部を、Ｌｉ＾＋
またはＭｇ＾２＾＋とＴｉ＾４＾＋、Ｚｒ＾４＾＋、Ｈ
ｆ＾４＾＋、Ｎｂ＾５＾＋及びＴａ＾５＾＋から選ばれ
た単独または２種以上の金属イオンとの組合せにより、
結晶内の電価が中和に保たれるように置換したことを特
徴とする波長可変レーザー用ガーネット結晶。1) Gd_3Sc_2Ga_3O_ used as a medium crystal for wavelength tunable laser with Cr^3^+ as active ion
In the crystal of 1_2, part of the Sc ions are replaced by Li^+
Or Mg^2^+ and Ti^4^+, Zr^4^+, H
By alone or in combination with two or more metal ions selected from f^4^+, Nb^5^+ and Ta^5^+,
A garnet crystal for wavelength tunable lasers characterized by substitution so that the electric charge within the crystal is kept neutral.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19832484A JPS6177380A (en) | 1984-09-21 | 1984-09-21 | Garnet crystal for wavelength-variable laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19832484A JPS6177380A (en) | 1984-09-21 | 1984-09-21 | Garnet crystal for wavelength-variable laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6177380A true JPS6177380A (en) | 1986-04-19 |
| JPS6367347B2 JPS6367347B2 (en) | 1988-12-26 |
Family
ID=16389212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19832484A Granted JPS6177380A (en) | 1984-09-21 | 1984-09-21 | Garnet crystal for wavelength-variable laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6177380A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63501854A (en) * | 1985-12-24 | 1988-07-28 | トレスト“ユジボドプロボド” | Batch type filtration equipment for fluids |
| JPH01500348A (en) * | 1986-04-30 | 1989-02-09 | アメリカン テレフォン アンド テレグラフ カムパニー | Coincidentally molten complex oxide |
-
1984
- 1984-09-21 JP JP19832484A patent/JPS6177380A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63501854A (en) * | 1985-12-24 | 1988-07-28 | トレスト“ユジボドプロボド” | Batch type filtration equipment for fluids |
| JPH01500348A (en) * | 1986-04-30 | 1989-02-09 | アメリカン テレフォン アンド テレグラフ カムパニー | Coincidentally molten complex oxide |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6367347B2 (en) | 1988-12-26 |
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| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |