JPS617578B2 - - Google Patents

Info

Publication number
JPS617578B2
JPS617578B2 JP54115104A JP11510479A JPS617578B2 JP S617578 B2 JPS617578 B2 JP S617578B2 JP 54115104 A JP54115104 A JP 54115104A JP 11510479 A JP11510479 A JP 11510479A JP S617578 B2 JPS617578 B2 JP S617578B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54115104A
Other languages
Japanese (ja)
Other versions
JPS5639454A (en
Inventor
Kosaku Tsuboshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Priority to JP11510479A priority Critical patent/JPS5639454A/ja
Priority to US06/184,058 priority patent/US4332658A/en
Priority to DE3033730A priority patent/DE3033730C2/de
Publication of JPS5639454A publication Critical patent/JPS5639454A/ja
Publication of JPS617578B2 publication Critical patent/JPS617578B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
JP11510479A 1979-09-10 1979-09-10 Chemical suybstance detector by using chemical sensitive element with structure of insulated-gate field-effect transistor Granted JPS5639454A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11510479A JPS5639454A (en) 1979-09-10 1979-09-10 Chemical suybstance detector by using chemical sensitive element with structure of insulated-gate field-effect transistor
US06/184,058 US4332658A (en) 1979-09-10 1980-08-28 Chemical substance detection apparatus
DE3033730A DE3033730C2 (de) 1979-09-10 1980-09-08 Vorrichtung zum Feststellen chemischer Substanzen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11510479A JPS5639454A (en) 1979-09-10 1979-09-10 Chemical suybstance detector by using chemical sensitive element with structure of insulated-gate field-effect transistor

Publications (2)

Publication Number Publication Date
JPS5639454A JPS5639454A (en) 1981-04-15
JPS617578B2 true JPS617578B2 (enExample) 1986-03-07

Family

ID=14654317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11510479A Granted JPS5639454A (en) 1979-09-10 1979-09-10 Chemical suybstance detector by using chemical sensitive element with structure of insulated-gate field-effect transistor

Country Status (3)

Country Link
US (1) US4332658A (enExample)
JP (1) JPS5639454A (enExample)
DE (1) DE3033730C2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3269784D1 (en) * 1981-05-15 1986-04-17 Licentia Gmbh Method for measuring ionic concentrations
JPS5924244A (ja) * 1982-08-02 1984-02-07 Hitachi Ltd マルチセンサの製造方法
JPS60128345A (ja) * 1983-12-15 1985-07-09 Olympus Optical Co Ltd イオン濃度測定装置
US4739380A (en) * 1984-01-19 1988-04-19 Integrated Ionics, Inc. Integrated ambient sensing devices and methods of manufacture
JPS60174945A (ja) * 1984-02-21 1985-09-09 Fuji Photo Film Co Ltd イオン活量測定装置用プロ−ブアセンブリ−
DE3519397A1 (de) * 1985-05-30 1986-12-04 Siemens AG, 1000 Berlin und 8000 München Sensor fuer gasanalyse bzw. -detektion
DE3519410A1 (de) * 1985-05-30 1986-12-04 Siemens AG, 1000 Berlin und 8000 München Betriebsverfahren und sensor fuer gasanalyse
DE3519436A1 (de) * 1985-05-30 1986-12-04 Siemens AG, 1000 Berlin und 8000 München Sensor fuer gasanalyse
US4743954A (en) * 1985-06-07 1988-05-10 University Of Utah Integrated circuit for a chemical-selective sensor with voltage output
JP2577981B2 (ja) * 1988-12-14 1997-02-05 株式会社堀場製作所 プロセス用イオン測定装置
US5144247A (en) * 1991-02-14 1992-09-01 Westinghouse Electric Corp. Method and apparatus for reducing IR error in cathodic protection measurements
DE19857953C2 (de) * 1998-12-16 2001-02-15 Conducta Endress & Hauser Vorrichtung zum Messen der Konzentration von Ionen in einer Meßflüssigkeit
WO2003011998A1 (fr) * 2001-07-31 2003-02-13 Asahi Glass Company, Limited Agents resistant aux taches, compositions de revetement contenant ceux-ci et articles revetus
US7544979B2 (en) * 2004-04-16 2009-06-09 Technion Research & Development Foundation Ltd. Ion concentration transistor and dual-mode sensors
KR20060101973A (ko) * 2005-03-22 2006-09-27 삼성엔지니어링 주식회사 염소 농도 측정용 센서 및 이를 구비한 정수 장치
US9726627B2 (en) 2014-01-28 2017-08-08 Ecolab Usa Inc. Electrochemical sensor and method of using same
JP2024005407A (ja) * 2022-06-30 2024-01-17 日本ピラー工業株式会社 抵抗検出センサ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3709796A (en) * 1970-06-05 1973-01-09 American Limnetics Instr Inc Method of using self-compensating electrode system
US4020830A (en) * 1975-03-12 1977-05-03 The University Of Utah Selective chemical sensitive FET transducers
JPS5466194A (en) * 1977-11-04 1979-05-28 Kuraray Co Fet sensor
NL187546C (nl) * 1978-11-06 1991-11-01 Philips Nv Meetinrichting voorzien van een veldeffekttransistor voor het meten van een de geleiding in het kanaal van de veldeffekttransistor beinvloedende uitwendige grootheid.

Also Published As

Publication number Publication date
DE3033730A1 (de) 1981-03-12
US4332658A (en) 1982-06-01
DE3033730C2 (de) 1983-08-25
JPS5639454A (en) 1981-04-15

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