JPS6175559A - One-dimensional contact type image sensor - Google Patents
One-dimensional contact type image sensorInfo
- Publication number
- JPS6175559A JPS6175559A JP59196556A JP19655684A JPS6175559A JP S6175559 A JPS6175559 A JP S6175559A JP 59196556 A JP59196556 A JP 59196556A JP 19655684 A JP19655684 A JP 19655684A JP S6175559 A JPS6175559 A JP S6175559A
- Authority
- JP
- Japan
- Prior art keywords
- type
- substrate
- image sensor
- well
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000006243 chemical reaction Methods 0.000 claims description 27
- 238000001444 catalytic combustion detection Methods 0.000 claims 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 3
- 239000002689 soil Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Facsimile Heads (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、ファクシミリ等において送信原稿を読みと
るための、−次元密着型のイメージセンサに関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a -dimensional close-contact type image sensor for reading a transmitted document in a facsimile machine or the like.
（従来例の構成とその問題点）
近年、一般にファクシミリの小形化、低コスト化を目脂
して、送信原稿幅と略等しい読取幅をもつ、密着型の一
次元イメージセンサの研究開発が進んでいる。(Conventional structure and its problems) In recent years, with the aim of reducing the size and cost of facsimile machines, research and development has progressed on contact-type one-dimensional image sensors that have a reading width approximately equal to the width of the transmitted document. I'm here.
第１図は、この種イメージセンサの従来例の構成を模式
的に示したもので、１は単結晶Ｓｉ基板であシ、この土
にＣＣＤ （Ｃｈａｒｇｅ Ｃｏｕｐｌｅｄ Ｄｅｖｉ
ｃｅｓ）とフォトダイオード（以下単にＰＤという）と
による−次元ＣＣＤ型イメージセンサ２が、市松模様状
に配列され、−次元密着型イメージセンサを構成してい
る。このような構成では、原稿像をシャープに結像する
に必要な光学系、すなわち、たとえばロッドレンズがセ
ンサ列に対応して２列必要であシ、従って光学系が複雑
゛になる。こ゛の欠点を排Ｃ２）
除するには、−次元ＣＣＤ型イメイメージセンサ列にし
てインライン型密着型イメージセンザを構成しなければ
ならないが、その時のＩ） Ｄはイメーゾセンサ・チッ
プ端から、数／Ｉｊｌｌの位置から配列されなければｔ
命出像に空白を生ずることに々る。−また、最端部及び
中心部のそれぞれのＰＤは光電変換特性が同じでなけれ
ば、特性の良好なイメーゾセンサということはできない
。FIG. 1 schematically shows the configuration of a conventional example of this type of image sensor. 1 is a single crystal Si substrate, and a CCD (Charge Coupled Device)
ces) and photodiodes (hereinafter simply referred to as PD) are arranged in a checkerboard pattern to form a -dimensional close-contact image sensor. In such a configuration, an optical system necessary to sharply form a document image, that is, for example, two rows of rod lenses corresponding to the sensor rows are required, and the optical system becomes complicated. In order to eliminate this drawback, it is necessary to construct an in-line contact type image sensor using a -dimensional CCD type image sensor array. /If it is not arranged from the position of Ijll, t
It tends to create a blank space in the image of life. -Furthermore, unless the PDs at the extreme end and the center have the same photoelectric conversion characteristics, an image sensor with good characteristics cannot be obtained.
（発明の目的）
本発明は上述の欠点に鑑み、イメージセンサ・チップの
端部から数１０１＋ｍの、極めて端部に近い位置からＰ
Ｄ相当の光電変換素子を配して、検出像の空白のない、
かつ、イメージ読増幅全域にわたって光電変換時性に差
異がないようにした、小形化、低コスト化を達成できる
一次元密着型イメ、−ノセンサを提供することを目的と
する。(Objective of the Invention) In view of the above-mentioned drawbacks, the present invention has been developed to provide an image sensor chip with a
By arranging a photoelectric conversion element equivalent to D, there is no blank area in the detected image.
Another object of the present invention is to provide a one-dimensional close-contact type image sensor that can achieve miniaturization and low cost, with no difference in photoelectric conversion time over the entire image reading and amplification range.
（発明の構成）
本発明は、第１導電型のＳｉ基板上に、直線的に複数個
の光電変換末子と、それに対応して蓄積された信月電荷
を読み出すＣＣＤとを設け、とくに前記光電変換素子を
、前記Ｓｉ基板の表面に設けられた第２導電型に形成し
たウェルと、前記ウェル内に形成されたＳｉ基板と同じ
第１導電型の高濃度層によるＰＮ接合とにより形成させ
、Ｓｉ基板とウェル聞に逆バイアスを印加し、ウェル領
域を単位画素ごとに分離した構造として目的を達成した
ものである。(Structure of the Invention) The present invention provides a plurality of photoelectric conversion terminals linearly on a first conductivity type Si substrate and a CCD that reads out the accumulated charges corresponding to the photoelectric conversion terminals. A conversion element is formed by a well formed in a second conductivity type provided on the surface of the Si substrate, and a PN junction formed in the well by a high concentration layer of the same first conductivity type as the Si substrate, This objective was achieved by applying a reverse bias between the Si substrate and the well and separating the well region into unit pixels.
（実施例の説明）
以下本発明を一実施例により図面を用いて詳細に説明す
る。(Description of Embodiments) The present invention will be described below in detail by way of an embodiment with reference to the drawings.
第２図は本発明の一実施例を説明する模式図で、２１は
Ｓｉ基板、２２は一次元ＣＣＤ型イメージセンサであり
、その光電変換素子を符号２３で、ＣＣＤを２４で示し
ている。本発明の一次元密着型イメーソセンサは、Ｓｉ
基板２１の端面から数１０μｍの位置まで図示のように
光電変換素子２３が一次元に配列されている。FIG. 2 is a schematic diagram illustrating an embodiment of the present invention, in which 21 is a Si substrate, 22 is a one-dimensional CCD type image sensor, the photoelectric conversion element is shown at 23, and the CCD is shown at 24. The one-dimensional contact type image sensor of the present invention is made of Si
As shown in the figure, photoelectric conversion elements 23 are arranged one-dimensionally from the end surface of the substrate 21 to a position several tens of micrometers away.
第３図は本発明に用いる一次元ＣＣＤ型イメージセンサ
の駆動方法を示す模式図で、３１はＳｉ基板、３２Ｆｉ
、光電変換素子、３３は信号線、３４． ／ｌ ＣＣＤ
による信号読出し回路、３５はフローティング・ディフ
ィノヨン・アンプであり、本発明においても従来同様に
光電変換素子３２が読んだ信号は光電変換されて信号線
３３により、読出し回路３４のＣＣＤに転送され、各Ｃ
ＣＤから順次出力信号が送出される。FIG. 3 is a schematic diagram showing the driving method of the one-dimensional CCD type image sensor used in the present invention, where 31 is a Si substrate, 32 is a Fi
, a photoelectric conversion element; 33 is a signal line; 34. /l CCD
35 is a floating definition amplifier, and in the present invention, as in the conventional case, the signal read by the photoelectric conversion element 32 is photoelectrically converted and transferred to the CCD of the readout circuit 34 via the signal line 33. C
Output signals are sequentially sent out from the CD.
第４図は、本発明要部の光電変換素子の一実施例の構造
を説明する図で、（ａ）は平面図、（ｂ）はそのＡ −
Ａ’断面図、（ｃ）は同じ（Ｂ−Ｂ’断面図である。FIG. 4 is a diagram illustrating the structure of an embodiment of the photoelectric conversion element which is the main part of the present invention, (a) is a plan view, and (b) is the A-
A' sectional view, (c) is the same (BB' sectional view.
４１はＮ導電バ１！のＳｉ基板、４２はＰ導電型のウェ
ル、４３はｎ土層、４４はＬＯＧＯ８（ｌｏｃａｌ ０
ｘｉｄａｔｉｏｎｏｆ ５ｉｌｉｃｏｎ）領截、４５は
Ｐ十領域によるチャンネルストップ、４６は信号線であ
シ、とくに（ｃ）図に示したようにＮ導電型Ｓｉ基板４
１とＰ導電型ウェル４２のＰ十領域（チャンネルストッ
プ）４５との間に、Ｐ十領域を基準にした逆バイアス電
圧■ｓｕ５を印加している。この構成でＮ型Ｓｉ基板４
１、それと反対導電型であるＰ型ウェル４２及びその中
に形成したＮ型の高濃度層ｎ」一層４３とによって光電
変換素子が構成されている。41 is N conductive bar 1! , 42 is a P conductivity type well, 43 is an n-soil layer, 44 is LOGO8 (local 0
45 is the channel stop by the P region, 46 is the signal line, especially as shown in the figure (c), the N conductivity type Si substrate 4
1 and the P0 region (channel stop) 45 of the P conductivity type well 42, a reverse bias voltage ■su5 with the P0 region as a reference is applied. With this configuration, the N-type Si substrate 4
1. A photoelectric conversion element is constituted by a P-type well 42 of the opposite conductivity type and an N-type high concentration layer 43 formed therein.
ｒ 口 Ａ
第５図は前回（ｃ）のようにＮ導電型Ｓｉ基板４１に逆
バイアス電圧ｖｓｕｂを印加した時の、光電変換素子の
深さ方向のポテンシャル図である。本発明に用いる光電
変換素子内では図示のように、Ｐ導電型ウェルよシ深い
所で発生した電子は符号Ａで示したようにＮ型Ｓ１基板
に押しだされ、Ｐ型つェル内で発生した電子はＢで示す
ようにｎ土層に蓄積されて、信号電圧として取り扱われ
る。すなわち、光電変換部分をＰ型ウェル領域内だけに
することが可能である。従って、本発明に用いる一次元
ＣＣＤ型イメージセンサでは、チップ（基板）の端から
２ Ｑ Ｉｔｍ以内まで光電変換素子を形成でき、かつ
、単位画素に対応させてＰ型ウェル領域を分離すること
により、最端部の光電変換素子と中心部分のそれとの光
電変換特性を同じくすることができる。r mouth A FIG. 5 is a potential diagram in the depth direction of the photoelectric conversion element when the reverse bias voltage vsub is applied to the N-conductivity type Si substrate 41 as in the previous example (c). In the photoelectric conversion element used in the present invention, as shown in the figure, electrons generated deep within the P-type well are pushed out to the N-type S1 substrate as indicated by symbol A, and are transferred to the P-type well. The generated electrons are accumulated in the n-soil layer as shown by B, and are treated as a signal voltage. That is, it is possible to provide the photoelectric conversion portion only within the P-type well region. Therefore, in the one-dimensional CCD image sensor used in the present invention, the photoelectric conversion element can be formed within 2 Q Itm from the edge of the chip (substrate), and by separating the P-type well region corresponding to the unit pixel. , it is possible to make the photoelectric conversion characteristics of the photoelectric conversion element at the extreme end the same as that of the central portion.
第６図は光電変換素子の製造の一例を説明するもので、
まず、（ａ）図のようにＮ型Ｓｉ基板４１にＰ型ウェル
４２を形成する。この時、ウェルの深さは２〜１０１１
ｍ１また、不純物濃度は１０１４〜１ｏ１６ｔ−ｍ−３
程度にする。つぎに（ｂ）図のようにＬＯＣＯ８法で、
Ｐ型ウェル・１２の周囲にＰ十領域４５を形成し、ウェ
ルにバイアス電り丁が印加できるようにする。つぎの工
程で（Ｃ）図に示すようにＬＱＣＯ８法によって、ｎ＠
一層４３領域を形成させる。FIG. 6 illustrates an example of manufacturing a photoelectric conversion element.
First, a P-type well 42 is formed in an N-type Si substrate 41 as shown in FIG. At this time, the depth of the well is 2 to 1011
m1 Also, the impurity concentration is 1014 to 1o16t-m-3
to a certain degree. Next, as shown in figure (b), use the LOCO8 method,
A P region 45 is formed around the P-type well 12 so that a bias voltage can be applied to the well. In the next step, n@
43 areas are formed in one layer.
本発明はこのように構成した光電変換素子と、ＣＣＤと
により一次元ＣＣＤ型イメージセンザ・チップを形成さ
せ、それを複数個１列に配列して一次元密着型イメージ
センザを構成したものである。In the present invention, a one-dimensional CCD type image sensor chip is formed by the photoelectric conversion element configured as described above and a CCD, and a plurality of chips are arranged in a line to constitute a one-dimensional contact type image sensor. It is.
（発明の効果）
ＪＪ、 ｌ説明して明らかなように、本発明を構成する
一次元ＣＣＤ型イメージセンサは、チップの端部から２
０ ｐｍ以内に光電変換素子が形成されており、かつ、
単位画素ごとにウェルを分前した構造であるため、それ
を−列に配した本発明は、検出像に空白を生ぜず、かつ
全長に亘って像の検出特性にばらつきはない。捷た、構
造上光学系が不要、または＋１’純になるため、小型簡
易な一次元密着型イメーノセンザとして、ファクシミリ
等に用いれば大いに益するどころがある。(Effects of the Invention) JJ, lAs is clear from the explanation, the one-dimensional CCD type image sensor constituting the present invention has two
A photoelectric conversion element is formed within 0 pm, and
Since the structure is such that wells are divided for each unit pixel, the present invention in which the wells are arranged in a -column does not produce blanks in the detected image, and there is no variation in the image detection characteristics over the entire length. Since it is compact, does not require an optical system due to its structure, or is +1' pure, it can be of great benefit if used as a small and simple one-dimensional close-contact image sensor for facsimiles and the like.
第１図は従来の密着型−次元イメージセンサの模式的構
成図、第２図は本発明の一次元密着型イメージセンサの
模式的構成図、第３図は一実施例の模式的構成図、第４
図は本発明要部の光電変換素子を説明する模式的平面図
及び断面図、第５図は本発明要部の光電変換素子のポテ
ンシャル図、第６図は光電変換素子の製造工程説明図で
ある。
１ 、２１ 、３１． 、４１・・・基板、２，２２・
・・−次元ＣＣＤ型イメージ七ンサ、２３．３２・・・
光電変換素子、３３ 、４６・・・信号線、２４．３４
・・・ＣＣＤ 。
３５・・・アンプ、４２・・・ウェル、４３・・・ｎ土
層、４４・・・ＬＯＣＯ８領域、４５・・・Ｐ」−領域
（チャンネルストップ）・
特許出願人 松下電子工業株式会社
第１図
］
第 ２ 図
第３図
第４図
（ａ）
（ｂ）
第４図
（Ｃ）
第５図
第６図FIG. 1 is a schematic block diagram of a conventional contact-type image sensor, FIG. 2 is a schematic block diagram of a one-dimensional close-contact image sensor of the present invention, and FIG. 3 is a schematic block diagram of an embodiment. Fourth
The figures are a schematic plan view and a cross-sectional view illustrating a photoelectric conversion element, which is the main part of the present invention, Figure 5 is a potential diagram of the photoelectric conversion element, which is the main part of the invention, and Figure 6 is a diagram explaining the manufacturing process of the photoelectric conversion element. be. 1, 21, 31. , 41... substrate, 2, 22...
...-dimensional CCD type image sensor, 23.32...
Photoelectric conversion element, 33, 46... signal line, 24.34
...CCD. 35...Amplifier, 42...Well, 43...N soil layer, 44...LOCO8 area, 45...P''-area (channel stop) Patent applicant Matsushita Electronics Co., Ltd. No. 1 Figure 2 Figure 3 Figure 4 (a) (b) Figure 4 (C) Figure 5 Figure 6
Claims (3)
、それに蓄積される信号電荷を読出す複数のＣＣＤを有
する一次元ＣＣＤ型イメージセンサを一列に配列し、と
くに前記光電変換素子を、前記Ｓｉ基板の表面に設けら
れた第２導電型からなるウェルとこのウェル内に形成さ
れた第１導電型の高濃度層とのＰＮ接合とにより形成し
たことを特徴とする一次元密着型イメージセンサ。(1) A one-dimensional CCD image sensor having a plurality of photoelectric conversion elements and a plurality of CCDs for reading signal charges accumulated therein is arranged in a row on a Si substrate of a first conductivity type, and in particular, the photoelectric conversion elements are is formed by a PN junction between a well of the second conductivity type provided on the surface of the Si substrate and a high concentration layer of the first conductivity type formed in the well. type image sensor.
ることを特徴とする、特許請求の範囲第（１）項記載の
一次元密着型イメージセンサ。(2) The one-dimensional contact image sensor according to claim (1), characterized in that a reverse bias voltage is applied between the Si substrate and the well.
立して形成されていることを特徴とする、特許請求の範
囲第（１）項の一次元密着型イメージセンサ。(3) A one-dimensional contact image sensor as claimed in claim (1), wherein the well regions are formed separately and independently from each other in correspondence with unit pixels.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59196556A JPH065729B2 (en) | 1984-09-21 | 1984-09-21 | One-dimensional contact type image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59196556A JPH065729B2 (en) | 1984-09-21 | 1984-09-21 | One-dimensional contact type image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6175559A true JPS6175559A (en) | 1986-04-17 |
| JPH065729B2 JPH065729B2 (en) | 1994-01-19 |
Family
ID=16359697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59196556A Expired - Lifetime JPH065729B2 (en) | 1984-09-21 | 1984-09-21 | One-dimensional contact type image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH065729B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63205948A (en) * | 1987-02-23 | 1988-08-25 | Toshiba Corp | Linear image sensor |
| JPS6473762A (en) * | 1987-09-16 | 1989-03-20 | Toshiba Corp | Linear image sensor |
| EP0908956A2 (en) * | 1997-10-06 | 1999-04-14 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and image sensor |
| EP1710892A1 (en) * | 2005-04-09 | 2006-10-11 | Rolls-Royce plc | A rotor for an electrical machine |
-
1984
- 1984-09-21 JP JP59196556A patent/JPH065729B2/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63205948A (en) * | 1987-02-23 | 1988-08-25 | Toshiba Corp | Linear image sensor |
| JPS6473762A (en) * | 1987-09-16 | 1989-03-20 | Toshiba Corp | Linear image sensor |
| EP0908956A2 (en) * | 1997-10-06 | 1999-04-14 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and image sensor |
| EP0908956A3 (en) * | 1997-10-06 | 2000-02-02 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and image sensor |
| US6150704A (en) * | 1997-10-06 | 2000-11-21 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and image sensor |
| EP1688998A2 (en) * | 1997-10-06 | 2006-08-09 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and image sensor |
| EP1688998A3 (en) * | 1997-10-06 | 2006-11-15 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and image sensor |
| EP1710892A1 (en) * | 2005-04-09 | 2006-10-11 | Rolls-Royce plc | A rotor for an electrical machine |
| US7557481B2 (en) | 2005-04-09 | 2009-07-07 | Rolls-Royce, PLLC | Rotor for an electrical machine |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH065729B2 (en) | 1994-01-19 |
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