JPS6172482A - Ccd pick up element - Google Patents

Abstract

PURPOSE:To easily and stably obtain a static image good in quality by providing a means for simultaneously producing and storing a photoelectric charge corresponding to an optical image on a photosensor on an odd number and an even number lines in the predetermined period in 1 frame. CONSTITUTION:On respective photosensors 10 on odd number and even number lines corresponding to the odd number and even number fields, a photoelectric charge corresponding to an optical image is simultaneously produced and stored in the predetermined period in 1 frame and transferred to a vertical shift register 11 at the same time. Then, the electric charge moved to the register 11 is transferred at a high speed, electric charges of the odd number and the even number lines are divided for storing registers 12-1a-12-4a for odd number lines and storing registers 12-1b-12-4b for even number lines, stored and held and read in order of the odd number line electric charge and the even number lie electric charge. Accordingly, the image of an object to be reflected based on a stored electric charge of the respective field exposed at the same timing can be projected as an image in 1 frame.

Description

Detailed Description of the Invention [Technical Field] The present invention relates to a CCOM image element using a charge-coupled device (hereinafter abbreviated as COD) as an image sensor, particularly a photosensor capable of generating and accumulating photoelectric charges. The present invention relates to improvements in means for accumulating photocharges corresponding to optical images and means for transferring accumulated photocharges.

[Prior art]

In general, solid-state 11i image elements are small, lightweight, and have a long lifespan.

It has features such as low power consumption. For this reason, they have come to be widely used as image sensors in place of conventional image pickup tubes. In particular, (solid-state image sensors using CDs, especially CCO image sensors with frame interline transfer method (F
The IL-CCDII image element) is the most widely used image element because it has excellent resolution characteristics, anti-blooming and smear characteristics, and other characteristics.

FIG. 8 is a block diagram showing a surrogate image side of the FI L-CCDI image element. In Fig. 8, 1 is a pn diode or MO arranged in a matrix on a substrate.
This is a photosensor made of an S diode or the like. When these photosensors are irradiated with a light image through an optical system (not shown), they generate and accumulate a photocharge proportional to the amount of incident light of the light image. Note that 1A corresponds to an odd field. The photosensors on the odd lines are shown, and 1B shows the photosensors on the even lines corresponding to the even fields.2 is provided corresponding to the photosensors in each row arranged vertically. 3 is an accumulation register connected to the final shift end of each of the vertical shift registers, and 4 is a horizontal shift register connected to the an shift end of the accumulation register 3. Reference numeral 5 denotes an output section connected to the final shift end of the horizontal shift register 3.

The photocharges thus accumulated in the photosensor 1 are transferred to the vertical shift register 2. Accumulation register 3. The signal is transferred to the output section 4 via the horizontal shift register 4, and periodically read out from the output section 4 as a horizontal line signal.

FIG. 9 is a diagram showing the manner in which photoelectric charges are accumulated in the photosensor 1 and the timing of readout.

As shown in this figure, the photosensor 1A on the odd line corresponding to the odd field and the photosensor 1B on the even line corresponding to the even field have one cycle of the timing signal S (one field). Accumulation of photocharges is performed alternately for one frame period at a time shifted by a certain amount, and readout is performed.

First, the accumulated charges of the photosensors 1A on the odd-numbered lines, which start accumulating photocharges from time t1, are transferred to the vertical shift register 2 at time 3, and immediately thereafter transferred at high speed to the accumulation register 3. Thereafter, the signal is transferred by -horizontal lines to the horizontal shift register 4, further transferred by the horizontal shift register 4 to the output section 5, and outputted from the output section 5 as an odd line signal. By repeating this operation by the number of horizontal lines corresponding to one field, the horizontal line signals VIA for odd fields are read out during the period from time t3 to t4.

Next, the accumulated charges of the photosensors 1B on the even lines, which have started accumulating photocharges from time t2, are transferred to the vertical shift register 2 at time t4, and immediately thereafter transferred at high speed to the accumulation register 13. Thereafter, as in the case of the odd field, the signal is transferred one horizontal line at a time to the horizontal shift register 4, further transferred from the horizontal shift register 4 to the output section 5, and outputted from the output section 5 as an even line signal. By repeating this operation for one field, the even field horizontal line signal VIB is read out during the period from time t4 to time t5.

The horizontal line signal V of the odd field thus read out
IA and even field horizontal line signal v1B, 1
A frame horizontal line signal is formed.

As mentioned above, in the FI L-CCDII image element, the photoelectric charge accumulation time is 1 for both the photosensor 1A on the odd line and the photosensor 1B on the even line.
It has a frame cycle. In other words, imaging is performed with an exposure time of 1/30 second. For this reason,
If the subject is moving, the image will be blurred. video me
In the case of , the above-mentioned blurring does not cause much trouble, but in the case of still images, it becomes a big problem. In order to solve this problem, it is possible to shorten the photoelectric charge accumulation time and create a so-called shutter effect.

As a means for shortening the storage time of photocharges, there is a means for discharging charges by an overflow drain and providing a shutter function to the element itself. That is, as shown in FIG. 8, a voltage is applied for a predetermined period of time to the overflow drain 6 provided adjacent to the photosensor 1, and during the period, the charge of the photosensor 1 is transferred to the overflow drain 6.
is discharged to the outside. By doing this, accumulation of photocharges is prevented during the above period. In this case, for example, as shown in FIG. 9, for the photosensor 1A on the odd-numbered line, the overflow drain 6 discharges charges during the period up to time t11, and
Photocharges are accumulated only during the period from 1 to t3 as shown by diagonal lines. Further, for the photosensor 1B on the even-numbered line, charge is discharged by the overflow drain 6 during the period up to time t12, and photocharge is accumulated as shown by diagonal lines only during the period from time t12 to t4. By doing so, the photoelectric charge accumulation time is shortened, so that the image sensor itself can have a shutter function.

However, the above means had the following drawbacks.

In other words, if the photo charge accumulation time is shortened to produce the shutter effect as described above, the exposure timing in the odd field and the exposure timing in the even field will be completely shifted by one field. . As a result, the odd field charges and even field charges accumulated in each photosensor are sequentially read out using the interlaced readout method as described above.
When a frame image is formed, if the subject is a moving subject, it becomes a composite of images of two different scenes. In other words, the display contents for each horizontal line of the projected image alternately show subject images of different scenes, and in extreme cases, a double image results.

As a result, the shutter effect is not effectively exhibited, and a still image of good quality cannot be obtained.

〔the purpose〕

The object of the present invention is to provide a ccom image element that can easily and stably obtain still images of good image quality with no blur and high resolution, even if the subject is a moving subject, due to the shutter effect of the element itself. It is about providing.

〔overview〕

In order to achieve the above object, the present invention is characterized by the following configuration. That is, in a photoelectric conversion section in which a plurality of photosensors capable of generating and storing photocharges are arranged in a matrix, photocharges corresponding to a light image are transferred to the photosensors on odd lines and the photosensors on even lines within one frame. They are generated and accumulated simultaneously during a predetermined period of time.

Then, the odd line charges generated and accumulated in each photo sensor on the odd line and the even line charges accumulated in each photo sensor on the even line are transferred to each column so that two or more cells correspond to each photo sensor. All data are simultaneously transferred to the vertical shift registers arranged in each area,
The transferred charges are transferred at high speed by the vertical shift registers 1 to 1, respectively, and the odd line charges and even line charges of each column transferred at high speed are stored and stored separately in separate storage registers. Suzu. Based on the odd line charges and even line charges accumulated and held in these storage registers, a signal is generated consisting of an odd field horizontal line signal and an even field horizontal line signal.
It is characterized by forming and outputting a Flume horizontal line signal.

〔Example〕

FIG. 1 is a block diagram showing the configuration of a first embodiment of the present invention. In this embodiment, for convenience of explanation, an image sensor array with 6 rows and 4 columns is illustrated.

In Figure 1, 10 (10-11, 10-12゜10
-13.10-14~10-61.10-62.10-
63.1O-64) is a photosensor capable of generating and storing photoelectric charges, which is composed of an n + p photodiode. These photosensors 10 are arranged in a matrix with rows in the horizontal direction and columns in the vertical direction so that odd lines corresponding to odd fields and even lines corresponding to even fields are formed alternately. It constitutes a photoelectric conversion section. Also 11 (11-11, 11-12, 11-1
3.1l-14) is a vertical shift register consisting of a two-phase drive COD provided adjacent to each of the photosensors, and two cells are arranged to correspond to each photosensor.

In other words, the pitch of the cells of the vertical shift register 11 is set to 1/2 of the pitch of the photosensors 10, and it is possible to simultaneously receive the photocharges generated and accumulated in each photosensor on the odd-numbered line and the even-numbered line. It is structured as follows.

An accumulation register 12 is connected to each final shift end of these vertical shift registers 11-1 to 11-4. This accumulation register 12 is a register 1 for odd/even line distribution.
2-1 to 12-4 and odd/even line storage register 12
-18. It consists of 12-1b to 12-4a and 12-4b. That is, vertical shift registers 11-1 to 1
1-4.4 At each final shift end, registers 12-1.12-2.12-3.1 are used for odd and even in-capture fractions.
Odd and even line storage register 1 through 2-4 respectively.
2-1a and 12-11), 12-28 and 12-2b.

12-38 and 12-3b, and 12-4a and 12-4b are connected, respectively. Each of the above storage registers 12-1
A horizontal shift register 13 is provided at the final shift end of a to 12-4t). The above vertical shift register 11
-1 to 11-4 and allocation registers 12-1 to 1
2-4 is a shift OtsukφV1. φv2 is added. In addition, accumulation registers 12-1a and 12- for odd lines
2a.

12-3a and 12-4a have a shift clock φ81,
φS2 is added to the even line storage register 12-1.
b, 12-2b, 12-3t), and 12-4b are provided with a shift clock φS3. φS4 is added. Roughly, the horizontal shift register 13 has shift clocks φH1 and φH.
2 is added.

A floating diffusion 14 is connected to the final shift end of the horizontal shift register 13, and an output end of the floating diffusion 14 is connected to an output transistor circuit 15. The output transistor circuit 15 includes FET1 and FET2 to form a source follower, and a reset FE is connected to the gate of FET1.
T3 is connected to the circuit, and has a function as a buffer circuit. Note that the source of the above FETI is output terminal 1.
6, and the drains of FET1 and FET3 are connected to 1E1. It is connected to power supply terminals 17a and 17b for applying a DC voltage +E2.

Incidentally, each of the photosensors 10 is provided with an overflow drain 18 adjacent to the overflow drain 18. During the period when the control signal φOFD is applied to the overflow drain 18, the charges of the photosensor 10 are discharged, and the photoelectric charges are transferred to the photosensor 10. is prevented from being generated and accumulated. During a predetermined period within one frame when the control signal φOFD is not applied, photocharges corresponding to the optical image irradiated via the optical system (not shown) are generated and accumulated all at once. The accumulated charges are transferred to the transfer gates 19 (19-1 to 19-4) provided between the photosensor groups in each column and the vertical shift registers 11-1 to 11-4, by applying transfer pulses φ. At the point in time, all of the data is simultaneously transferred to each of the vertical shift registers 11-1 to 11-4.

FIGS. 2(a) and 2(b) are diagrams showing the structure of the vertical shift register 11, and FIG. 2(a) is a schematic diagram showing the cross-sectional structure;
(b) is an operation pulse waveform diagram.

20 in the figure is a silicon substrate, and this silicon substrate 20
N impurity layers N and N'' for configuring the buried channel CCD 21 are formed thereon, and 5iO211
122 is formed, and an electrode 23 is further formed thereon. Thus, under one electrode, the n-type impurity constituting the buried channel C0D21. ! IN,N
By changing the concentration of -, the charge transfer direction is specified to one direction, and a group of signal charges is held between two adjacent electrodes to perform charge transfer.

Next, the operation of this embodiment configured as described above will be explained with reference to the waveform diagram shown in FIG. 3 as needed.

As shown in FIG. 3, overflow drain control signal φ
During the period when OFD is at H level, food sensor 1
The zero charge is discharged to the outside through the overflow drain 18. Therefore, no photocharge is accumulated in the photosensor 10 during the above period.

When the φOFD becomes L level, photoelectric charges are accumulated in all the photosensors 10 at the same time. That is, in FIG. 3, the period T indicated by the arrow is the photocharge accumulation period, and the other periods are non-accumulation periods, and the shutter function is performed.

Now, when the transfer pulse φ is applied to the transfer gates 19-1 to 19-4 at time t21 immediately before the end of exposure, that is, the accumulation operation of photocharges, at this timing, the vertical shift registers 11-1 to 11-4 are Of the shift clocks added, φ■1 is at H level, and φ■2 is at L level.
level, so the photosensors on the odd lines and the photosensors on the even lines accumulate up to that time,
, the charges are transferred to the vertical shift registers 11-1 to 11-11.
-4 cells simultaneously. After time t21, when the shift clocks φ■1 and φ■2 are applied to each of the vertical shift registers 11-1 to 11-4 simultaneously and at a fast cycle, the shift clocks are transferred to each of the vertical shift registers 11-1 to 11-4. The accumulated charges are transferred to the storage register 12 at high speed. At this time, φ■1゜φ■2 and φ81. φS2 and φ
S3. Depending on the mutual timing relationship of φS4, odd line charges are stored in odd line storage registers 12-1a to 12-1.
The even line charges are transferred and accumulated in the even line storage registers 12-1b to 12-4b. For example, among the charges transferred by the vertical shift register 11-1, the photosensor 10-1 on the odd line
The odd line charges transferred from 1.10-31. -41.The even line charge transferred from 10-61 is stored in the even line storage register 12.
-1b is transferred and stored. Similarly, vertical shift register 1
Among the charges transferred by 1-2.11-3.11-4, odd line charges are stored in the odd line accumulation register 12-2.
a, 12-3a.

12-48, and the even line charges are transferred to the even line storage registers 12-2b, 12-3b, 1.
2-4b and are respectively transferred and stored.

After time t22, the charges accumulated in the accumulation register 12 are sequentially transferred to the horizontal shift register 13. That is, at time t22, φS1 is at L level, and φS2
When the voltage reaches H level, the first odd line charge accumulated in the last shift end cells of the odd line storage registers 12-1a, 12-2a, 12-3a, 12-4a, that is, the photosensor 10-11 to 10-14
The charges transferred from the horizontal shift register 13 are transferred to the horizontal shift register 13. These charges are sequentially shifted by shift clocks φH1 and φH2 applied to the horizontal shift register 13, and reach the floating diffusion 14. After being converted into a voltage signal by the floating diffusion 14, it is output as a horizontal line signal from the output terminal 16 via the output transistor circuit 15.

Subsequently, at time t23, the second odd line charges, that is, the charges transferred from the photosensors 10-31 to 10-34, are read out in the same manner as above, and further, at time t24, the third odd line charges, that is, the charges transferred from the photosensors 10-31 to 10-34 are read out.
The charges transferred from -51 to 10-54 are read out in the same manner as above. Odd line charges generated and accumulated in the photosensors 10 on odd lines corresponding to odd fields in this manner are read out as horizontal line signals of odd fields during period TA. During this time, the charges accumulated in the even-numbered line accumulation registers 12-1b to 12-4b are
Shift clock φ83. Since φS4 does not change, it is held as it is.

Next, after time t25, the shift clock φS3
When φS4 becomes L level and φS4 becomes H level, the charges accumulated in the even line storage registers 12-ib to 12-4b are transferred to the horizontal shift register and read out in the same manner as in the case of the odd field described above. That is, time t25
First, the first even line charge, that is, photosensor 1
The charges from 0-21 to 10-24 are transferred to the horizontal shift register 13 and read out, and then at time t26 the charges from the second even line, that is, the photosensors 10-41 to
The charges from 10-4'4 are transferred to the horizontal shift register 13 and read out, and at time t27, charges from the third even line, that is, photosensors 10-61 to 10-64, are transferred to the horizontal shift register 13 and read out.
The charges from the horizontal shift register 13 are transferred to the horizontal shift register 13 and read out. In this manner, the charges accumulated in the photosensors 10 on the even lines corresponding to the even fields are read out as horizontal line signals of the even fields during the period TB.

In this way, one frame of horizontal line signals consisting of the horizontal line signals of the odd field and the horizontal line signal of the even field is read out.

During the period during which the above readout is performed, photoelectric charges for the next frame are accumulated in the photosensor 10, but as is clear from FIG. 3, in this embodiment, the period up to time t28 is As described above, photoelectric charges are not accumulated in the photosensor 10. Then, in a period T from time t28, photocharges for the next frame are accumulated.

In this way, in this embodiment, photocharges corresponding to the optical image are simultaneously generated and accumulated in the photosensors 10 on the odd and even lines corresponding to the odd and even fields for a predetermined period within one frame. , which are simultaneously transferred to the vertical shift register 11 provided adjacent to each of the photosensors 10. Then, the charges transferred to the vertical shift register 11 are transferred at high speed, and the charges of the odd and even lines are transferred to the accumulation registers 12-1a to 12-4a for the number lines and the accumulation registers 12-1b to 12-4 for the even lines. 4b and accumulated and held, and the accumulated and held charges are sequentially read out in the order of odd line charges and even line charges. Therefore, it is possible to display an image of the subject based on the accumulated charges of each field exposed at the same timing as one frame image.

As a result, although the image sensor itself has a shutter function, there is no deterioration in image quality caused by the difference in exposure timing between odd and even fields as in conventional methods, and good still images can be obtained. be able to.

Note that in this embodiment, each vertical shift register 11-1 to 11-1
-4, the storage registers for odd-numbered lines and storage registers for even-numbered lines are arranged in parallel.
The area of the storage register arrangement section is approximately 1/2 of the area of the photoelectric conversion section, which has the advantage of requiring a small chip size and improving yield.

Next, other embodiments of the present invention will be described. FIG. 4 is a block diagram showing the configuration of a second embodiment of the present invention. Note that the same parts as in FIG. 1 are given the same reference numerals, and a detailed explanation will be omitted.

The fundamental difference between this embodiment and the first embodiment is that in the first embodiment, a two-phase drive CO2 is used as a vertical shift register.
Whereas the vertical shift register 11 consisting of D is used,
This embodiment uses a vertical shift register 41 consisting of a four-phase drive COD. In addition, along with this, the accumulation register and the horizontal shift register are also adapted to four-phase drive. A horizontal shift register 43 is used.

FIG. 5 is a diagram showing the structure of a portion of the vertical shift register 41 used in the second embodiment, in which 50 is a silicon substrate, 51 is an n layer, 52 is 5102111, and 53 is an electrode. As shown in the figure, this vertical shift register 41 is composed of a four-phase drive type COD in which four groups of signal charges are transferred and driven for each of four electrodes 53, respectively.

Therefore, unlike the two-phase drive COD, there is no need for changing the concentration of n impurity for charge transfer. Therefore, the structure of the element itself is simplified and manufacturing is easier than when using a two-phase drive COD.

In this embodiment, the pitch of the cells of the vertical shift register 41 is 1/4 of the pitch of the photosensors 10.

The operation of the second embodiment configured as described above will be explained with reference to the waveform diagrams shown in FIG. 6 and FIGS. 7(a) to (C). In addition, FIG. 7(a).

(b) and (c) are period 7a in FIG. 6, respectively.

It is an enlarged view of Tb and Tc. As shown in FIG. 6, when φT becomes H level at time t31, which is just before the end of exposure, the photosensors 10-11 to 10- on the odd line
14.10-31~10-34.10-51~10-5
Accumulated charge of 4 and photosensor 0- on even lines
21~1o-24, 10-41~10-44.10-6
1 to 10=64 accumulated charges are transferred to the corresponding vertical shift registers 1-1 to 11-4, respectively. At this time, φV1 is at H level and φV2 to φV4 are at L level, so charges are accumulated under the electrode to which φV1 is applied.

Next, φV1 goes to L level and φV2 goes to H level, so that the charge is transferred below the electrode to which φV2 is applied.

Thereafter, the data is sequentially transferred under the electrode where φV becomes H level.

The charge transferred at high speed by the vertical shift register 41 is φ
It is accumulated in the accumulation register 42 to which S1 or φS5 is applied. When the charge d from the photosensor on the odd line is transferred by the vertical shift register 41, φS1 is at H level and φS5 is at L level, so the above charge is applied to φS1 of the odd line storage register.
! Transferred to the very bottom, below φ82゜φS3. The signals are sequentially transferred under the application electrode of φS4.

On the other hand, when charges from photosensors on even lines are transferred by the vertical shift register 41, φ
Since S1 is at L level and φS5 is at H level, the above charges are accumulated under the φS5 application electrode of the even line storage register. And below φ86. φ87. The signals are sequentially transferred under the application electrode of φS8.

In this way, the odd line charges are distributed and accumulated in the odd line accumulation registers 42-1a to 42-4a and the even line accumulation registers 42-1b to 42-4b.

Next, at time t32, φS1 goes to L level.

By sequentially setting φV2 to φV4 to H level, each odd line charge is transferred to φS4 of the odd line storage register 42.
Move under the electrode where is being applied. Then, at time t33, as shown in FIG. 7(b), when φS4 becomes L level and φH2 becomes H level, the charge is transferred from the storage register 42 to the horizontal shift register 43. After that, φH3, φH4, φH1, . By repeating this operation for the number of odd lines, reading out the horizontal line signals of the odd field is completed.

During this time, φS5 to φS8 do not change, so the charges stored in the even line storage registers 42-1t) to 42-4b are held as they are.

When reading out the charges stored in the odd line storage registers 42-1a to 42-4a is completed and reaches time t34, φS5 goes to L level, and φS6 to φS8 sequentially go to H level. , the accumulated charges in the even-numbered line accumulation registers 42-1b to 42-4b move below the applied N pole of φS8.

Then, at time t35, as shown in FIG. 7(C), φ
When S8 becomes L level and φH4 becomes H level, the charge is transferred from the storage register 42 to the horizontal shift register 4.
Transferred to 3. And after this, φ)-11, φ)-1
2, φH3... become H level in sequence, 1
The charges on the horizontal line are output from the output terminal 16 as a horizontal line signal. By repeating this operation for the number of even lines, reading out the horizontal line signals of the even field is completed.

Thus, one frame of horizontal line signals consisting of the odd field horizontal line signals and the even field horizontal line signals is read out.

In this way, in the second embodiment, a vertical shift register 41 consisting of a four-phase driver COD is used. The charges are transferred at the same time and transferred at high speed to the storage register 42, and the odd line charges and even line charges are accumulated in the odd line charge storage register and the even line charge register, respectively. It is designed to read line charges. Therefore, in this embodiment as well, the horizontal line signals of each field read out are based on the photocharges accumulated in the photosensor 10 at the same exposure timing, so even if the element itself has a shutter function. Even in this case, as in the first embodiment, there is no deterioration in image quality due to a shift in exposure timing, and it is possible to always obtain a good quality image without blur.

Note that the present invention is not limited to the above embodiments.

For example, in the above embodiment, a means for forcibly discharging the charge of the photosensor 10 using an overflow drain was shown as a means for providing the image sensor itself with a shutter function, but in the case of an element using a MOS photodiode as the photosensor, Alternatively, an element shutter function may be provided by turning ON/OFF a sensor gate signal applied to the photodiode. It goes without saying that various other modifications can be made without departing from the gist of the present invention.

〔Effect of the invention〕

According to the present invention, the horizontal line signals of odd-numbered fields and horizontal line signals of even-numbered fields are based on photocharges accumulated in the photosensor at the same exposure timing, so even if the subject is a moving subject, However, due to the shutter effect of the element itself, it is possible to create a CCOM image element tube element that can easily and stably obtain a static Wf4 image with no blur, high resolution, and good image quality.

[Brief explanation of the drawing]

1 to 3 are diagrams showing a first embodiment of the present invention, in which FIG. 1 is a block diagram showing the configuration of a CCD III full element, and FIGS. 2(a) and 3(b) are vertical shift register sections. A schematic diagram of the cross-sectional structure and an operation pulse waveform diagram showing the configuration of the
FIG. 3 is a waveform diagram for explaining the operation. Figures 4 to 7 (
a) to <C> are diagrams showing the second embodiment of the present invention;
The figure is a block diagram showing the CCOM image element tube element, Figure 5 is a sectional view showing the structure of the vertical shift register part, Figures 6 and 7, and Figures (a) to (C) are waveform diagrams for explaining the operation. be. Figures 8 and 9 are diagrams showing conventional examples, and Figure 8 is a cc
A block diagram showing the OM image element tube element, and FIG. 9 are waveform diagrams for explaining the operation. 10...Photo sensor, 11.41...Vertical shift register, 12.42...Storage register, 13.43
...Horizontal shift register, 14...Floating diffusion, 15...Output transistor circuit,
18... Overflow drain, 19 River transfer gate, 20.50... Silicon substrate, 21... N impurity layer, 22.52... 5iOz film, 23.53... Electrode.

Claims (1)

[Claims] A plurality of photos that can generate and store photoelectric charges are formed in a plurality of rows in the horizontal direction and in a plurality of columns in the vertical direction so that odd lines corresponding to odd fields and even lines corresponding to even fields are formed alternately. A photoelectric conversion section in which sensors are arranged in a matrix, and a photoelectric charge corresponding to an optical image are simultaneously generated in the photosensors on the odd-numbered lines and the photosensors on the even-numbered lines in this photoelectric conversion section during a predetermined period within one frame. means for accumulating, and by means of this means, the odd line charges generated and accumulated in the photosensors on the odd numbered lines and the even line charges generated and accumulated in the photosensors on the even numbered lines can be simultaneously received in a batch for each column. A vertical shift register is arranged such that two or more cells correspond to each photosensor in each column, and the odd line charge and even line charge of each column are transferred at high speed by each vertical shift register. an accumulation register provided to separately accumulate and hold line charges, and an odd field horizontal line signal and an even field horizontal line signal based on the odd line charges and even line charges accumulated and held in these accumulation registers; 1. A CCD image pickup device, comprising means for forming and outputting one frame of horizontal line signals consisting of signals.