JPS6164880A - Vacuum deposition device - Google Patents

Vacuum deposition device

Info

Publication number
JPS6164880A
JPS6164880A JP18743784A JP18743784A JPS6164880A JP S6164880 A JPS6164880 A JP S6164880A JP 18743784 A JP18743784 A JP 18743784A JP 18743784 A JP18743784 A JP 18743784A JP S6164880 A JPS6164880 A JP S6164880A
Authority
JP
Japan
Prior art keywords
film thickness
vacuum deposition
vacuum
chambers
evaporation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18743784A
Other languages
Japanese (ja)
Inventor
Mitsuo Shikama
鹿間 光夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP18743784A priority Critical patent/JPS6164880A/en
Publication of JPS6164880A publication Critical patent/JPS6164880A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • C23C14/545Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/546Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Optical Record Carriers (AREA)

Abstract

PURPOSE:To provide a vacuum deposition device which improves productivity and yields a high-quality film deposited by evaporation by making exchangeable the crystal resonating diaphragm of a monitor head (MH) for vacuum deposition control even during vapor deposition without releasing the vacuum state in a vacuum deposition vessel. CONSTITUTION:Monitor chambers 13a, 13b for film thicknesses at plural points are provided to part of the vacuum deposition vessel 1. Take-out port shutters 14a, 14b and shutters 15a, 15b for shutting the chambers 13a, 13b are disposed to said chambers respectively so that said chambers can be held hermetic in dependently from the vessel 1. The MH6b is disposed to the chamber 13b to constitute a known vacuum deposition control loop so that the MH6b disposed in the other chamber 13a is taken out by closing the shutter 15a and opening the shutter 14a and that the crystal resonating diaphragm used in excess of the service limit is made exchangeable. The stop of the continuous vapor deposi tion as a result of exchanging the crystal resonating diaphragm is eliminated and the stable high-quality film deposited by evaporation is obtd. by the above- mentioned constitution.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は光ディスク等の記録膜および反射膜を形成する
真空蒸着装置に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a vacuum deposition apparatus for forming recording films and reflective films for optical discs and the like.

従来例の構成とその問題点 近年、レーザ光を用いて記録再生が可能な光ディスクが
高密度記録媒体として注目されている。
2. Description of the Related Art Structures of Conventional Examples and Their Problems In recent years, optical discs capable of recording and reproducing information using laser light have been attracting attention as high-density recording media.

画像、音声、文書の情報記録媒体として、またコンピュ
ータ用のデータメモリ媒体としてその需要が急速に拡大
されようとしており、高品質、低コストの光ディスクを
市場に供給するため高能率な生産方式、生産設備の開発
が要求されている。中でも記録膜形成工法の一つである
真空蒸着法による薄膜形成装置の連続量産化を進める上
で記録膜の。特性を安定して引き出すため蒸着制御の代
表例として水晶振動子によるモニター制御方式があるが
、本mil制御方式においては水晶娠動子仮に寿命があ
り、その都度交換が必要となるため蒸着装置としての連
続化に問題があるのが現状である。
The demand for optical discs as information recording media for images, audio, and documents, and as data memory media for computers is rapidly expanding, and in order to supply the market with high-quality, low-cost optical discs, highly efficient production methods and production methods are required. Development of equipment is required. In particular, we are developing recording films in order to promote continuous mass production of thin film forming equipment using vacuum evaporation, which is one of the recording film forming methods. A typical example of vapor deposition control in order to stably bring out the characteristics is a monitor control method using a crystal oscillator, but in this mil control method, the crystal oscillator has a limited lifespan and must be replaced each time, so it is not suitable for use as a vapor deposition device. The current situation is that there is a problem with continuity.

第1図は従来の真空蒸着装置の一般的な構成を示す。1
は真空蒸@槽、2は基材、3は蒸発物、4は蒸発源、5
は加熱コイル、6は膜厚制御用モニターヘッド、7は規
制用シャッタ、8は制tall用ケーブル、9は蒸着制
御用装置、10は蒸着電源、11は真空ポンプ、12は
リークボート、18は基材準備槽、19は基材取出し槽
である。
FIG. 1 shows the general configuration of a conventional vacuum evaporation apparatus. 1
is the vacuum evaporation tank, 2 is the base material, 3 is the evaporated material, 4 is the evaporation source, 5
1 is a heating coil, 6 is a monitor head for film thickness control, 7 is a regulating shutter, 8 is a control tall cable, 9 is a vapor deposition control device, 10 is a vapor deposition power source, 11 is a vacuum pump, 12 is a leak boat, and 18 is a A base material preparation tank, 19 is a base material removal tank.

このように構成された真空蒸着槽内では次のようにして
蒸着される。真空ポンプ11によって只空度10−5〜
1O−6Torrに排気維持されている真空蒸着(a1
内に、同じく真空度10=−1O−6Torrに排気維
持されている基材準備槽18より基材2が搬送セットさ
れ、加熱コイル5に蒸着電源10で発生させた電流を流
すことにより蒸発源4を加熱して、基材2と膜厚制御用
モニターヘッド6の方向に蒸発物3を飛ばす。蒸発物3
が基材2に積層される速度は、膜厚制御用モニターヘッ
ド6の内部にセットされた水晶撮動子仮に蒸発物3が同
時に積層されてていくことにより水晶振動子板の振動周
波数の変化を蒸着制御2I]装置9によって読み取り、
これが所定の蒸着速度になるよう蒸@電源10のパワー
が制御される。以上の制御ループにより毎回蒸着する蒸
発物3の速度コントロールを安定に供給でき、基材2に
品質の安定した蒸着膜が得ることが出来ている。
In the vacuum deposition tank configured as described above, deposition is performed as follows. With the vacuum pump 11, the air pressure is 10-5 ~
Vacuum deposition (a1
The substrate 2 is transferred and set from the substrate preparation tank 18 which is also maintained at a vacuum level of 10=-1O-6 Torr, and the evaporation source is set by passing a current generated by the evaporation power source 10 through the heating coil 5. 4 is heated to blow the evaporated material 3 in the direction of the base material 2 and the monitor head 6 for film thickness control. Evaporated matter 3
The speed at which the evaporated matter 3 is laminated on the base material 2 is determined by the change in the vibration frequency of the crystal oscillator plate set inside the monitor head 6 for film thickness control. is read by the vapor deposition control 2I] device 9,
The power of the evaporation power source 10 is controlled so that the evaporation rate becomes a predetermined evaporation rate. Through the above control loop, the speed control of the evaporated material 3 deposited each time can be stably supplied, and a deposited film of stable quality can be obtained on the substrate 2.

しかしながら、膜厚制御用モニターヘッド6内にセット
された水晶振動子板は、前述のように使用限界があるた
め、規定量の膜が積層づれば取換えが必要となり、真空
蒸着槽1内に基材2を連続的に供給出来ても、水晶撮動
子仮の使用限界を越えた時点で自動的に水晶振動子板の
取換えが出来ない限り真空蒸着槽1内の真室を解除し扉
を開放して取換えなければならない。よって、蒸着の連
続性は水晶振動子板の寿命によって制限されてしまうも
のである。尚、水晶振動子板の寿命は蒸着材料や蒸発源
4との距離によって異なるが金属酸化物を蒸着材料とし
た光ディスクにおいては蒸着枚数は50枚程度である。
However, the crystal oscillator plate set in the monitor head 6 for film thickness control has a usage limit as described above, so it must be replaced once a specified amount of film has been deposited, and the Even if material 2 can be continuously supplied, the true chamber in vacuum deposition tank 1 will be released and the door closed unless the crystal oscillator plate can be automatically replaced when the crystal oscillator plate exceeds its temporary usage limit. must be opened and replaced. Therefore, the continuity of vapor deposition is limited by the life of the crystal resonator plate. Although the life of the crystal resonator plate varies depending on the vapor deposition material and the distance from the evaporation source 4, the number of vapor-deposited optical discs using metal oxide as the vapor-deposited material is about 50.

発明の目的 本発明は@着制御用モニターヘッドに用いられている水
晶振動子板を、真空蒸着槽内の真空状態を解除せず蒸着
中においても取換えが可能な真空蒸着装置を提供するこ
とを目的とする。
Purpose of the Invention The present invention provides a vacuum evaporation apparatus in which a crystal resonator plate used in a monitor head for deposition control can be replaced even during evaporation without releasing the vacuum state in the vacuum evaporation tank. With the goal.

発明の構成 本発明の真空蒸着装置は、真空蒸@槽の一部に膜厚モニ
ター室を複数箇所設け、前記真空蒸着槽と前記膜厚モニ
ター室の間に気密性を有する開閉自在なシャッタを設け
、前記膜厚モニター空には外部大気と通じる開口部とこ
の開口部に気密性を有する開閉自在なシャッタを設けて
、複数箇所に設けた前記膜厚モニター室の1つに配設さ
れた膜厚制御用モニターヘッドを使用して蒸着実行中に
他の膜厚モニター室の膜厚制御用モニターヘッドを交換
できるようにしたことを¥f徴とする。
Structure of the Invention The vacuum evaporation apparatus of the present invention includes a plurality of film thickness monitoring chambers provided in a part of a vacuum evaporation tank, and an airtight shutter that can be opened and closed between the vacuum evaporation tank and the film thickness monitoring chamber. The film thickness monitor is provided with an opening communicating with the outside atmosphere and an airtight shutter that can be freely opened and closed, and the film thickness monitor is disposed in one of the film thickness monitoring chambers provided at a plurality of locations. The feature is that the film thickness control monitor head can be used to replace the film thickness control monitor head in another film thickness monitoring chamber during vapor deposition.

実施例の説明 以下、本発明の一実施例を第2図に基づいて説明する。Description of examples Hereinafter, one embodiment of the present invention will be described based on FIG. 2.

なお、第1図と同様の作用を成すものには同一符号を付
けてその説明を省く。6a、6bは膜厚制御用モニター
ヘッド、13a、13b G、を膜厚モニター室、14
a、14bは取出しロシャツタ、15a。
Components having the same functions as those in FIG. 1 are given the same reference numerals and their explanations will be omitted. 6a, 6b are monitor heads for film thickness control, 13a, 13b G are film thickness monitor chambers, 14
a, 14b is a take-out Roshata shutter, and 15a.

15bは膜厚モニター至遮断用シャッタ、16a、16
bはシャッタ駆動装置、17a、17bは膜厚モニター
空リークポートである。
15b is a shutter for film thickness monitoring and blocking, 16a, 16
b is a shutter driving device, and 17a and 17b are film thickness monitor empty leak ports.

次に動作と共に第2図の構成を詳細に説明する。Next, the configuration of FIG. 2 will be explained in detail along with the operation.

真空ポンプ11によって真空度10−” 1O−6To
rrに排気維持されている真空蒸着槽1内に同じく真空
度10=−1O−6Torrに排気されている基材準備
槽18より基材2を搬送セットし、加熱コイル5に蒸着
電源10で発生させた電流を流すことにより蒸発源4を
加熱して基材2と膜厚制御モニターヘッド6の方向に蒸
発物3を飛ばす。蒸発物3が基材2に積層される速度は
膜厚モニターヘッド5a、6bの内部にセットされた水
晶振動子板の一方の水晶振動子板に蒸発物3が同時に積
層されていくことにより使用中の水晶振動子板の振動周
波数の変化を蒸着制御kll′IA置9によって読み取
り、指定した蒸着速度になるよう蒸着電源10のパワー
を制御する。以上の制御ループにより毎回蒸着する蒸発
物3の速度コントロールを安定に供給し基材2に品質の
安定した蒸着膜が得ることが出来ている。蒸着完了した
基材2は搬送により取出し槽19へ送られる。
The degree of vacuum is 10-” 1O-6To by the vacuum pump 11.
The substrate 2 is transferred from the substrate preparation tank 18, which is also evacuated to a vacuum level of 10=-1O-6 Torr, into the vacuum evaporation tank 1, which is maintained at a vacuum level of 10 Torr. By passing the current, the evaporation source 4 is heated and the evaporated material 3 is thrown in the direction of the base material 2 and the film thickness control monitor head 6. The speed at which the evaporated material 3 is deposited on the base material 2 is determined by simultaneously depositing the evaporated material 3 on one of the crystal oscillator plates set inside the film thickness monitor heads 5a and 6b. The change in the vibration frequency of the crystal resonator plate inside is read by the vapor deposition control kll'IA device 9, and the power of the vapor deposition power source 10 is controlled to achieve the specified vapor deposition speed. Through the above control loop, the speed control of the evaporated material 3 deposited each time is stably supplied, and a deposited film of stable quality can be obtained on the substrate 2. The base material 2 on which vapor deposition has been completed is transported to a take-out tank 19.

前記従来例の構成と問題点の項で指摘したように蒸着制
御のモニターセンサとして使用されている水晶振動子板
には使用限界があり、従来では水晶振動子板の使用限界
毎に真空蒸着槽1内の真空状態を解除し取換えなければ
ならず連続蒸着をストップする必要があったが、本発明
のように真空蒸着槽1内の一部に複数箇所の膜厚モニタ
ー空13a。
As pointed out in the section on the configuration and problems of the conventional example, the crystal oscillator plate used as a monitor sensor for vapor deposition control has a usage limit. However, as in the present invention, film thickness monitor holes 13a are provided at a plurality of locations in a part of the vacuum deposition tank 1, as in the present invention.

13bを設け、各々の膜厚モニター室13a、 ?3b
に取出しロシャッタ14a、 14bと、外部からシャ
ッタ駆動装置16a、 16bでそれぞれ任意に開閉が
出来る膜厚モニター至遮断用シャッタ15a、15bと
、膜厚モニター室リークポートの機能を設けて、真空蒸
着槽1とは独自に気密を保てる構成にしているため、一
方の膜厚モニター室′13bに膜厚制御用モニターヘッ
ド6bを配備し蒸着制御ループを組み蒸着中においても
、他方の膜厚モニター113aに配備されている膜厚制
御用モニターヘッド6a72膜厚モニター空遮断用シヤ
ツタ15aを閉じ、取出しロシャッタ14aを開くこと
により外部に取出し使用限界を越えた水晶振動子板を取
換えることが可能となり、水晶振動子板の取換えによる
連続蒸着ストップを解消した装置構造が実現されている
13b, and each film thickness monitoring chamber 13a, ? 3b
The vacuum evaporation tank is equipped with take-out shutters 14a and 14b, shutters 15a and 15b for film thickness monitoring and cutoff that can be opened and closed arbitrarily by external shutter drive devices 16a and 16b, and a film thickness monitoring chamber leak port function. 1 has a structure that can independently maintain airtightness, so a film thickness control monitor head 6b is installed in one film thickness monitor chamber '13b, and a vapor deposition control loop is established so that even during vapor deposition, the film thickness monitor head 6b is not connected to the other film thickness monitor 113a. By closing the film thickness control monitor head 6a72 and the shutter 15a for film thickness monitoring and opening the take-out shutter 14a, it is possible to take out the crystal to the outside and replace the crystal resonator board that has exceeded its usage limit. An apparatus structure has been realized that eliminates the need to stop continuous evaporation due to replacement of the vibrator plate.

発明の詳細 な説明のように本発明の真空蒸着装置は、真空蒸着槽内
に複数箇所の気密を独自に保てる膜厚モニター室を設け
その内部にMQ厚制罪用モニターヘッドを配備すること
によりf+j回安定したに着パワーがiりられる制御ル
ープを組み蒸着が可能であると共にモニターセンサであ
る水晶振動子板の取換え時においても蒸着をストップす
ることなく基材、蒸発源の連続供給が可能な限り真空蒸
着槽内を大気圧に戻すことなく連続的な制御蒸着を実施
出来、蒸る工程での生産性が向上し、また真2蒸肴槽内
を大気圧に戻し扉を開放する回数が極めて減少したため
真空蒸着Ia内のクリーン度も保て高品質な蒸着膜が得
られるものである。
As described in the detailed description of the invention, the vacuum evaporation apparatus of the present invention has a film thickness monitoring chamber that can independently maintain airtightness at multiple locations in the vacuum evaporation tank, and an MQ thickness control monitor head is installed inside the chamber. It is possible to perform evaporation by building a control loop that can stably supply the deposition power f + j times, and also allows continuous supply of the substrate and evaporation source without stopping the evaporation even when replacing the crystal oscillator plate that is the monitor sensor. Continuous controlled vapor deposition can be performed without returning the inside of the vacuum deposition tank to atmospheric pressure as much as possible, improving productivity in the steaming process, and returning the inside of the vacuum deposition tank to atmospheric pressure and opening the door. Since the number of times of deposition is extremely reduced, the cleanliness inside the vacuum deposition Ia can be maintained and a high quality deposited film can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の真空蒸着装置の構成図、第2図は本発明
の真空蒸着装置の一実施例の構成図である。 1・・・真空蒸着槽、2・−・基材、3・・・蒸発物、
4・・・蒸発源、5・・・加熱コイル、5a、5b・・
・膜厚制御用モニターヘッド、7・・・規制用シャッタ
、9・・・蒸着制御用装置、11・・・真空ポンプ、1
2・・・リークポート、13a、13b−=n’A厚モ
ニター室、14a、14b −・・取出しロシセッタ、
15a、 15b・・・膜厚モニターV遮断用シャッタ
、lea、16b・・・シャッタ駆動装置、17a。 17b・・・膜厚モニター室リークポート、18・・・
基材準備槽、19・・・基材取出し槽 代理人   森  本  義  弘 第1図
FIG. 1 is a block diagram of a conventional vacuum evaporation apparatus, and FIG. 2 is a block diagram of an embodiment of the vacuum evaporation apparatus of the present invention. 1... Vacuum deposition tank, 2... Base material, 3... Evaporated material,
4... Evaporation source, 5... Heating coil, 5a, 5b...
・Monitor head for film thickness control, 7... Regulatory shutter, 9... Evaporation control device, 11... Vacuum pump, 1
2...Leak port, 13a, 13b-=n'A thickness monitor chamber, 14a, 14b--Takeout rosissetter,
15a, 15b... Film thickness monitor V cutoff shutter, lea, 16b... Shutter drive device, 17a. 17b... Film thickness monitor chamber leak port, 18...
Substrate preparation tank, 19... Substrate removal tank agent Yoshihiro Morimoto Figure 1

Claims (1)

【特許請求の範囲】[Claims] 1、真空蒸着槽の一部に膜厚モニター室を複数箇所設け
、前記真空蒸着槽と前記膜厚モニター室の間に気密性を
有する開閉自在なシャッタを設け、前記膜厚モニター室
には外部大気と通じる開口部とこの開口部に気密性を有
する開閉自在なシャッタを設けて、複数箇所に設けた前
記膜厚モニター室の1つに配設された膜厚制御用モニタ
ーヘッドを使用して蒸着実行中に他の膜厚モニター室の
膜厚制御用モニターヘッドを交換できるようにした真空
蒸着装置。
1. A plurality of film thickness monitoring chambers are provided in a part of the vacuum deposition tank, an airtight shutter that can be opened and closed is provided between the vacuum deposition tank and the film thickness monitoring chamber, and an external An opening that communicates with the atmosphere and an airtight shutter that can be freely opened and closed are provided in this opening, and a monitor head for film thickness control is installed in one of the film thickness monitoring chambers provided at multiple locations. A vacuum evaporation device that allows you to replace the film thickness control monitor head in another film thickness monitoring chamber while the evaporation process is in progress.
JP18743784A 1984-09-06 1984-09-06 Vacuum deposition device Pending JPS6164880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18743784A JPS6164880A (en) 1984-09-06 1984-09-06 Vacuum deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18743784A JPS6164880A (en) 1984-09-06 1984-09-06 Vacuum deposition device

Publications (1)

Publication Number Publication Date
JPS6164880A true JPS6164880A (en) 1986-04-03

Family

ID=16206043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18743784A Pending JPS6164880A (en) 1984-09-06 1984-09-06 Vacuum deposition device

Country Status (1)

Country Link
JP (1) JPS6164880A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01224950A (en) * 1988-03-04 1989-09-07 Fuji Xerox Co Ltd Manufacture of optical recording medium
WO1998050916A1 (en) * 1997-05-08 1998-11-12 Matsushita Electric Industrial Co., Ltd. Device and method for manufacturing an optical recording medium
JP2010077469A (en) * 2008-09-25 2010-04-08 Hitachi Zosen Corp Film-thickness-detecting device of vacuum vapor-deposition facility
EP2261388A1 (en) * 2009-06-12 2010-12-15 Applied Materials Inc. a Corporation of the State of Delaware Deposition rate monitor device, evaporator, coating installation, method for applying vapor to a substrate and method of operating a deposition rate monitor device
EP2436800A1 (en) * 2005-12-02 2012-04-04 Superconductor Technologies, Inc. High-throughput deposition system for oxide thin film growth by reactive coevaporation
JP2012126938A (en) * 2010-12-14 2012-07-05 Ulvac Japan Ltd Vacuum deposition device and method for forming thin film
EP3366804A1 (en) * 2017-02-22 2018-08-29 Satisloh AG Box coating apparatus for vacuum coating of substrates, in particular spectacle lenses
WO2019149382A1 (en) * 2018-02-05 2019-08-08 Applied Materials, Inc. Deposition apparatus for depositing evaporated material and methods therefor

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01224950A (en) * 1988-03-04 1989-09-07 Fuji Xerox Co Ltd Manufacture of optical recording medium
WO1998050916A1 (en) * 1997-05-08 1998-11-12 Matsushita Electric Industrial Co., Ltd. Device and method for manufacturing an optical recording medium
US6340501B1 (en) 1997-05-08 2002-01-22 Matsushita Electric Industrial Co., Ltd. Device and method for manufacturing an optical recording medium
KR100353774B1 (en) * 1997-05-08 2002-09-27 마츠시타 덴끼 산교 가부시키가이샤 Device and method for manufacturing an optical recording medium
EP2436800A1 (en) * 2005-12-02 2012-04-04 Superconductor Technologies, Inc. High-throughput deposition system for oxide thin film growth by reactive coevaporation
JP2010077469A (en) * 2008-09-25 2010-04-08 Hitachi Zosen Corp Film-thickness-detecting device of vacuum vapor-deposition facility
EP2261388A1 (en) * 2009-06-12 2010-12-15 Applied Materials Inc. a Corporation of the State of Delaware Deposition rate monitor device, evaporator, coating installation, method for applying vapor to a substrate and method of operating a deposition rate monitor device
JP2012126938A (en) * 2010-12-14 2012-07-05 Ulvac Japan Ltd Vacuum deposition device and method for forming thin film
EP3366804A1 (en) * 2017-02-22 2018-08-29 Satisloh AG Box coating apparatus for vacuum coating of substrates, in particular spectacle lenses
US10913999B2 (en) 2017-02-22 2021-02-09 Satisloh Ag Box coating apparatus for vacuum coating of substrates, in particular spectacle lenses
WO2019149382A1 (en) * 2018-02-05 2019-08-08 Applied Materials, Inc. Deposition apparatus for depositing evaporated material and methods therefor

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