JPS6163015U - - Google Patents
Info
- Publication number
- JPS6163015U JPS6163015U JP14737184U JP14737184U JPS6163015U JP S6163015 U JPS6163015 U JP S6163015U JP 14737184 U JP14737184 U JP 14737184U JP 14737184 U JP14737184 U JP 14737184U JP S6163015 U JPS6163015 U JP S6163015U
- Authority
- JP
- Japan
- Prior art keywords
- radial
- diameter tapered
- bearing
- double
- tapered surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Magnetic Bearings And Hydrostatic Bearings (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14737184U JPS6163015U (enEXAMPLES) | 1984-10-01 | 1984-10-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14737184U JPS6163015U (enEXAMPLES) | 1984-10-01 | 1984-10-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6163015U true JPS6163015U (enEXAMPLES) | 1986-04-28 |
Family
ID=30705599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14737184U Pending JPS6163015U (enEXAMPLES) | 1984-10-01 | 1984-10-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6163015U (enEXAMPLES) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US7005717B2 (en) | 2000-05-31 | 2006-02-28 | Freescale Semiconductor, Inc. | Semiconductor device and method |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
| US7045815B2 (en) | 2001-04-02 | 2006-05-16 | Freescale Semiconductor, Inc. | Semiconductor structure exhibiting reduced leakage current and method of fabricating same |
| US7067856B2 (en) | 2000-02-10 | 2006-06-27 | Freescale Semiconductor, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US7105866B2 (en) | 2000-07-24 | 2006-09-12 | Freescale Semiconductor, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US7161227B2 (en) | 2001-08-14 | 2007-01-09 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US7211852B2 (en) | 2001-01-19 | 2007-05-01 | Freescale Semiconductor, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| US7342276B2 (en) | 2001-10-17 | 2008-03-11 | Freescale Semiconductor, Inc. | Method and apparatus utilizing monocrystalline insulator |
| JP2011229371A (ja) * | 2010-04-20 | 2011-11-10 | Gebruder Klocker Gmbh | レノ耳を形成するための装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56131825A (en) * | 1980-03-15 | 1981-10-15 | Hamana Tekko Kk | Gas bearing having guide hole on bearing part |
| JPS56131826A (en) * | 1980-03-15 | 1981-10-15 | Hamana Tekko Kk | Box-type gas bearing with partition plate |
-
1984
- 1984-10-01 JP JP14737184U patent/JPS6163015U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56131825A (en) * | 1980-03-15 | 1981-10-15 | Hamana Tekko Kk | Gas bearing having guide hole on bearing part |
| JPS56131826A (en) * | 1980-03-15 | 1981-10-15 | Hamana Tekko Kk | Box-type gas bearing with partition plate |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7067856B2 (en) | 2000-02-10 | 2006-06-27 | Freescale Semiconductor, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US7005717B2 (en) | 2000-05-31 | 2006-02-28 | Freescale Semiconductor, Inc. | Semiconductor device and method |
| US7105866B2 (en) | 2000-07-24 | 2006-09-12 | Freescale Semiconductor, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US7211852B2 (en) | 2001-01-19 | 2007-05-01 | Freescale Semiconductor, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| US7045815B2 (en) | 2001-04-02 | 2006-05-16 | Freescale Semiconductor, Inc. | Semiconductor structure exhibiting reduced leakage current and method of fabricating same |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US7161227B2 (en) | 2001-08-14 | 2007-01-09 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US7342276B2 (en) | 2001-10-17 | 2008-03-11 | Freescale Semiconductor, Inc. | Method and apparatus utilizing monocrystalline insulator |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| JP2011229371A (ja) * | 2010-04-20 | 2011-11-10 | Gebruder Klocker Gmbh | レノ耳を形成するための装置 |
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