JPS6161561B2 - - Google Patents

Description

[Detailed description of the invention]

The present invention relates to an electronic device having a structure in which a ceramic dielectric resonator is fixed to a base via a support, and the electronic device has characteristics in the material of the support. Electronic devices using porcelain dielectric resonators include filters, duplexers, oscillators, etc. When configuring these electronic devices, porcelain dielectric resonators are attached to a base such as a case via an insulating support. The resonator may be fixed. A specific example of this will be explained regarding a filter. FIG. 1 is a schematic partial sectional view thereof. In the figure, reference numeral 1 denotes a metal case serving as a base, which serves as a cut-off waveguide. 2 is a ceramic dielectric resonator, 3 is a support base, and the ceramic dielectric resonator 2 is fixed with a glaze (not shown). In such a structure, the ceramic dielectric resonator 2 is fixed to the support base 3 by baking a glaze. The glass component in the glaze material is melted by interposing it between the bases 3 and heat-treated at a temperature of about 800°C, and then solidified by cooling, and at the same time, both are fixed. There is. At this time, if there is too much difference in the coefficient of thermal expansion between the ceramic dielectric resonator 2 and the support base 3, cracks will occur in the glaze interposed therebetween, making it impossible to fix the two. Conventionally, forsterite 2MgO was used as a support base.
SiO ₂ was used, but the thermal expansion coefficient (a) of this forsterite is 10 ppm/°C, whereas many ceramic dielectric resonators have a thermal expansion coefficient of about 5 to 9 ppm/°C, so both were heat-treated. In order to fuse and fix the material with a glaze, it was necessary to pay special attention to the temperature curve during cooling and the selection of the glaze. As is clear from the above points, an object of the present invention is to provide a support base whose coefficient of thermal expansion is more similar to that of a ceramic dielectric resonator. Another object of the present invention is to provide a support whose coefficient of thermal expansion can be changed by changing the composition ratio of the constituent materials. That is, the gist of the present invention is that a ceramic dielectric resonator is fixed to a base via a support, and the support includes 20 to 99 mol% of 2MgO.SiO ₂ and 80 to 1 mol of ZrSiO ₄ . % as the main component, and this
It is characterized in that 20 mol% or less of SiO ₂ is added. The support base according to this invention is made of 2MgO・SiO ₂ and
The main component is ZrSiO ₄ and SiO ₂ is an additive. Among these, the thermal expansion coefficient of 2MgO・SiO ₂ is 10 ppm/℃, while that of ZrSiO ₄ is 4 ppm/℃, so by changing the ratio of the two, it is possible to adjust the thermal expansion coefficient in the range of approximately 4 to 10 ppm/℃. The coefficient of thermal expansion can be changed. However, it is difficult to make porcelain from these main components alone.
By adding SiO ₂ to these main components, porcelain formation can be promoted. In this way, SiO ₂ plays the role of a sintering agent and can overcome the drawback that sintering is difficult using only the main component. This invention will be described in detail below with reference to Examples. First, the porcelain that will form the support stand was prepared. This porcelain was prepared as follows. In other words, as raw materials for porcelain, calcined
2MgO・SiO ₂ and ZrSiO ₄ as well as SiO ₂ were prepared, weighed to obtain porcelain in the proportions shown in Table 1, mixed wet, and then dried.
It was molded at a pressure of 2000Kg/cm ² . Thereafter, the molded body was fired in air at 1300 to 1400°C for 2 hours to produce a cylindrical porcelain support having a size of 10 mmφ and a height of 5 mm. For the obtained support, the dielectric constant (εr), Q, and rate of temperature change of resonance frequency (ηf) at 10 GHz were measured, and the measurement results for α are also shown in Table 1. Note that η _f and η 〓 have the following relationship. η _f =−1/2η〓−α Where, η〓: Temperature change rate of permittivity α: Linear expansion coefficient of support base

[Table] In Table 1, sample numbers 1, 10, 11, and 16 are outside the scope of this invention, and all others are within the scope of this invention. Furthermore, FIG. 2 shows the measurement of the effect on the characteristics of εr, Q, ηf, and α when the ratio of 2MgO·SiO ₂ and ZrSiO ₄ was changed. In other words, Figure 2 a
is ε, Fig. 2 b is Q, Fig. 2 c is ηf, Fig. 2 d
is about α. In addition, at this time, SiO ₂ was all 4 mol %. As is clear from Table 1 and Figure 2,
2MgO・SiO ₂ 20-99 mol%, ZrSiO ₄ 80-1 mol%
It is preferable that SiO 2 be the main component and SiO ₂ as an additive be 20 mol % or less. The reason for this limitation is that 2MgO・
This is because if SiO ₂ is less than 20 mol % and ZrSiO ₄ is more than 80 mol %, sintering becomes difficult, the Q value decreases, and εr becomes too large.
The reason for the limitation is that εr becomes large because the electric field of the ceramic dielectric resonator leaks through the support base. On the other hand, since the purpose of this invention is to change the coefficient of thermal expansion, 2MgO・SiO ₂ is
The content of ZrSiO ₄ was 1 mol% or less. Moreover, when the amount of SiO ₂ exceeds 20 mol%,
MgO・SiO ₂ (steatite) and SiO ₂ precipitate,
Q value decreases extremely. In addition, in the above-mentioned examples, as an additive
Although SiO ₂ was used, clay may also be added. When clay is used, the clay may contain Al ₂ O ₃ , SiO ₂ ,
Although it is composed of H ₂ O, the same effect can be obtained even if the SiO ₂ component is contained in an amount of 20 mol % or less. In addition, as low-temperature sintering agents, ZnO, H ₂ BO ₃ ,
A trace amount of PbO, Bi ₂ O ₃ , etc. may be added. Furthermore, the inclusion of unavoidable impurities is permitted. Next, we used _a ceramic dielectric resonator with a composition of (Zr ₀ . _{8 Sn 0} . When changing .alpha., the change in .alpha. was measured, and the results are shown in FIG. In the figure, the broken line is that of the support base, and the solid line is that of the ceramic dielectric resonator. As is clear from the figure, both α show almost identical changes. Next, a glass frit paste made of zinc borosilicate was interposed between the ceramic dielectric resonator made of ( _Zr0.8Sn0.2 ) _TiO4 and the support of sample number ₇ , and baked at ₈₀₀ ℃ _. Both were fixed. At this time, no cracks were observed in the glaze. Furthermore, the temperature cycle test was repeated in the range of -50°C to +500°C, but no cracks were observed in the glaze. In addition to zinc borosilicate-based glaze materials, lead borate-based, lead borosilicate-based,
Materials with a melting temperature of 600 to 850°C can be used, such as lead borozincate. In addition, as a magnetic dielectric resonator, the above-mentioned
In addition to TiO ₂ system, BaO-TiO ₂ system (α=8ppm/℃)
It is sufficient to use a material that matches the coefficient of thermal expansion of the material. Further, as examples of actually incorporating it into a ceramic dielectric resonator, it can be incorporated into a filter, a duplexer, a resonator, and a strip line. As described above, the support base according to the present invention has a small dielectric constant, so it has little effect on magnetic lines of force and electric lines of force, and has a high Q, so there is little loss. Furthermore, it has a small coefficient of thermal expansion, and by changing its blending ratio, the magnitude of the coefficient of thermal expansion can be changed, without causing cracks in the glaze that fixes the two. It also has the advantage of not causing cracks in the glaze due to temperature changes, and can provide highly reliable electronic devices that are resistant to external environments such as impact resistance and heat resistance.

[Brief explanation of the drawing]

Figure 1 is a schematic partial cross-sectional view of a filter in an electronic device, and Figure 2 shows the effect on each characteristic when the ratio of 2MgO SiO ₂ and ZrSiO ₄ is changed.
is εr, b is Q, c is ηf, and d is α. Third
The figure shows when the temperature is changed from room temperature to 800℃.
FIG. 6 is a diagram showing changes in α of the ceramic dielectric resonator and the support base. 1... Case, 2... Magnetic dielectric resonator, 3... Support stand.

Claims (1)

[Claims] 1. A ceramic dielectric resonator is fixed to a base via a support, and the support is made of 2MgO・SiO ₂ 20~
The main component is 99 mol%, ZrSiO ₄ 80-1 mol%,
An electronic device using a porcelain dielectric resonator, characterized in that it is made of porcelain to which 20 mol% or less of SiO ₂ is added. 2. Claim 1, characterized in that the ceramic dielectric resonator is fixed to a support base with a glaze.
An electronic device using the magnetic dielectric resonator described in 1. 3. The electronic device is any one of a filter using a magnetic dielectric resonator, a duplexer using a magnetic dielectric resonator, and an oscillator using a magnetic dielectric resonator, as described in claim 1. An electronic device using a magnetic dielectric resonator.