JPS6160318U - - Google Patents

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Publication number
JPS6160318U
JPS6160318U JP14329584U JP14329584U JPS6160318U JP S6160318 U JPS6160318 U JP S6160318U JP 14329584 U JP14329584 U JP 14329584U JP 14329584 U JP14329584 U JP 14329584U JP S6160318 U JPS6160318 U JP S6160318U
Authority
JP
Japan
Prior art keywords
transistor
shunt
collector
current path
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14329584U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14329584U priority Critical patent/JPS6160318U/ja
Publication of JPS6160318U publication Critical patent/JPS6160318U/ja
Pending legal-status Critical Current

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  • Control Of Electrical Variables (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの考案の一実施例を示す回路図、第
2図は従来のシヤントデシペータ回路を示す図で
ある。 11…太陽電池セル群、Q11〜Q13,Q2
1〜Q23…トランジスタ、R11〜R13…負
荷抵抗、141〜143…バイアス回路。
FIG. 1 is a circuit diagram showing an embodiment of this invention, and FIG. 2 is a diagram showing a conventional shunt dissipator circuit. 11...Solar cell group, Q11 to Q13, Q2
1 to Q23...Transistor, R11 to R13...Load resistor, 141 to 143...Bias circuit.

Claims (1)

【実用新案登録請求の範囲】 太陽電池セルの電圧発生部分と基準ライン間に
、コレクタ・エミツタ電流路を形成して負荷抵抗
に接続されるシヤント素子としての第1のトラン
ジスタが設けられ、この第1のトランジスタのベ
ースに、前記太陽電池セルの余剰電力に応じて変
化する駆動電圧を与えシヤント動作を得るように
したシヤントデシペータ回路において、 前記第1のトランジスタのコレクタ・エミツタ
電流路に更に、第2のトランジスタのコレクタ・
エミツタ電流路を直列接続し、かつこの第2のト
ランジスタのベースにもベースバイアス回路を通
して前記駆動電圧を与えるように構成し、前記第
1のトランジスタの短絡状態であつてもこれに対
応する前記太陽電池セルの発生電力の出力が得ら
れるようにしたことを特徴とするシヤントデシペ
ータ回路。
[Claims for Utility Model Registration] A first transistor as a shunt element is provided between the voltage generation part of the solar cell and a reference line to form a collector-emitter current path and is connected to a load resistor. In the shunt dissipator circuit, the shunt dissipator circuit is configured to obtain a shunt operation by applying a drive voltage that varies depending on the surplus power of the solar cell to the base of the first transistor, further comprising: a collector-emitter current path of the first transistor; , the collector of the second transistor.
The emitter current paths are connected in series, and the driving voltage is applied to the base of the second transistor through a base bias circuit, so that even if the first transistor is short-circuited, the corresponding solar current path is connected in series. A shunt dissipator circuit characterized in that an output of power generated by a battery cell is obtained.
JP14329584U 1984-09-21 1984-09-21 Pending JPS6160318U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14329584U JPS6160318U (en) 1984-09-21 1984-09-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14329584U JPS6160318U (en) 1984-09-21 1984-09-21

Publications (1)

Publication Number Publication Date
JPS6160318U true JPS6160318U (en) 1986-04-23

Family

ID=30701595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14329584U Pending JPS6160318U (en) 1984-09-21 1984-09-21

Country Status (1)

Country Link
JP (1) JPS6160318U (en)

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