JPS6159742A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS6159742A JPS6159742A JP59183013A JP18301384A JPS6159742A JP S6159742 A JPS6159742 A JP S6159742A JP 59183013 A JP59183013 A JP 59183013A JP 18301384 A JP18301384 A JP 18301384A JP S6159742 A JPS6159742 A JP S6159742A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gate
- control electrode
- cathode
- external
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10W76/138—
-
- H10W72/00—
Landscapes
- Die Bonding (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59183013A JPS6159742A (ja) | 1984-08-30 | 1984-08-30 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59183013A JPS6159742A (ja) | 1984-08-30 | 1984-08-30 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6159742A true JPS6159742A (ja) | 1986-03-27 |
| JPH036659B2 JPH036659B2 (enExample) | 1991-01-30 |
Family
ID=16128209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59183013A Granted JPS6159742A (ja) | 1984-08-30 | 1984-08-30 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6159742A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63255924A (ja) * | 1987-03-25 | 1988-10-24 | ビービーシー ブラウン ボヴェリ アクチェンゲゼルシャフト | 半導体素子 |
| US5189509A (en) * | 1989-12-15 | 1993-02-23 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and electrode block for the same |
-
1984
- 1984-08-30 JP JP59183013A patent/JPS6159742A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63255924A (ja) * | 1987-03-25 | 1988-10-24 | ビービーシー ブラウン ボヴェリ アクチェンゲゼルシャフト | 半導体素子 |
| US5189509A (en) * | 1989-12-15 | 1993-02-23 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and electrode block for the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH036659B2 (enExample) | 1991-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4685998A (en) | Process of forming integrated circuits with contact pads in a standard array | |
| KR890004468B1 (ko) | 반도체 장치 | |
| US4542398A (en) | Semiconductor devices of multi-emitter type | |
| GB881832A (en) | Improvements in or relating to the bonding of metals to bodies comprising semiconductive or brittle materials | |
| GB1404100A (en) | Microwave transistor package having low parasitic inductance and capacitance | |
| US5047833A (en) | Solderable front metal contact for MOS devices | |
| EP0935286A4 (en) | COPPER CIRCUIT CONNECTING SUBSTRATE AND ITS MANUFACTURE | |
| JP3222207B2 (ja) | 半導体デバイスとその製造方法 | |
| US6433424B1 (en) | Semiconductor device package and lead frame with die overhanging lead frame pad | |
| US4374393A (en) | Light triggered thyristor device | |
| US10325838B2 (en) | Semiconductor device fabricated by flux-free soldering | |
| JPS6159742A (ja) | 半導体装置 | |
| GB1352621A (en) | High frequency semiconductor device | |
| JPH039622B2 (enExample) | ||
| US2959718A (en) | Rectifier assembly | |
| US3254393A (en) | Semiconductor device and method of contacting it | |
| JPS624330A (ja) | 半導体装置 | |
| US3368121A (en) | Semiconductor thyristor of pnpn type | |
| JPH0637209A (ja) | 半導体装置 | |
| CN119501223B (zh) | 一种用于静电卡盘的真空钎焊方法 | |
| JPS6347977A (ja) | ゲ−トタ−ンオフサイリスタ装置 | |
| JPH0543474Y2 (enExample) | ||
| JP2917928B2 (ja) | 半導体装置の製造方法 | |
| JPS604260A (ja) | 半導体装置 | |
| JPH0744025Y2 (ja) | リードの半田メッキ装置 |