JPS6158287A - Magnetoelectric conversion element - Google Patents
Magnetoelectric conversion elementInfo
- Publication number
- JPS6158287A JPS6158287A JP59179906A JP17990684A JPS6158287A JP S6158287 A JPS6158287 A JP S6158287A JP 59179906 A JP59179906 A JP 59179906A JP 17990684 A JP17990684 A JP 17990684A JP S6158287 A JPS6158287 A JP S6158287A
- Authority
- JP
- Japan
- Prior art keywords
- folded
- magnetosensitive
- magnetic
- magnetically sensitive
- resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】
く技術分野〉
本発明は強磁性体薄膜で構成された磁気抵抗効果型磁電
変換素子に関する。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a magnetoresistive magnetoelectric conversion element composed of a ferromagnetic thin film.
〈従来技術〉
磁気抵抗効果型磁電変換素子は、強磁性体金属が磁界に
よりその電気抵抗が変化する磁気抵抗効果を利用して磁
界の強さを電気信号に変換する。<Prior Art> A magnetoresistive magnetoelectric conversion element converts the strength of a magnetic field into an electrical signal by utilizing the magnetoresistive effect in which the electrical resistance of a ferromagnetic metal changes depending on a magnetic field.
この磁気抵抗効果型磁電変換素子を構成するN1−co
t Ni−Feなどの強磁性体金属H,MrAにおいて
は、vsM’Aの厚さにも依るが、20X10〜40X
10 Ω備とその比抵抗は極めて低いため、磁気抵抗
素子として使用する膜厚及び素子の幅寸法を開整してい
る。しかるに、限られた素子寸法を考慮すると、1本の
感磁エレメントのみを形成することで高い抵抗値を得る
ことは困難であり、実用上は、ジグザグ状の折り返しパ
ターンを用いて感磁エレメントの長さを太き(すること
により、必要な抵抗値を得ている。N1-co constituting this magnetoresistive magnetoelectric conversion element
t For ferromagnetic metals such as Ni-Fe and MrA, 20X10 to 40X depends on the thickness of vsM'A.
Since the specific resistance of 10 Ω is extremely low, the film thickness and width of the element used as the magnetoresistive element are adjusted accordingly. However, considering the limited element dimensions, it is difficult to obtain a high resistance value by forming only one magnetically sensitive element, and in practice, it is difficult to obtain a high resistance value by forming only one magnetically sensitive element. By increasing the length, the necessary resistance value is obtained.
第2図は従来の磁電変換素子の一例を示す、感磁エレメ
ント1′及び感磁エレメント2′は、それぞれ強磁性体
薄膜が複数の同一方向の感磁抵抗部B′と折り返し部A
′とからなるジグザグ状の折り返しパターンに形成され
たものである。感磁エレメント1′の一方の端部に電源
用端子3′が形成され、感磁エレメント1′と感磁エレ
メント2′との接続部に出力信号取り出し用端子4′が
形成され、感磁エレメント2′の他方の端部に接地用端
子5′が形成される。!3磁エレメント1′と感磁エレ
メント2′とは、それぞれの感磁抵抗部B′の方向が互
いに直交するように配置されている。なお、この感磁抵
抗部B′の方向は、直交方向ではなく、例えば互いに4
5度の角度をなす方向であってもよく、基本的には任意
の角度でもよい。FIG. 2 shows an example of a conventional magnetoelectric transducer. Magnetically sensitive element 1' and magnetically sensitive element 2' each have a plurality of ferromagnetic thin films arranged in the same direction, including magnetosensitive resistance part B' and folded part A.
′ is formed in a zigzag-like folded pattern. A power supply terminal 3' is formed at one end of the magnetically sensitive element 1', and an output signal extraction terminal 4' is formed at the connection between the magnetically sensitive element 1' and the magnetically sensitive element 2'. A grounding terminal 5' is formed at the other end of 2'. ! The three-magnetic element 1' and the magnetically sensitive element 2' are arranged such that the directions of their respective magnetically sensitive resistance portions B' are perpendicular to each other. Note that the directions of the magneto-sensitive resistance parts B' are not perpendicular to each other, but are, for example, 4
It may be a direction forming an angle of 5 degrees, or basically any angle.
感磁エレメント1′と感磁エレメント2′とは、感磁抵
抗部B′の方向がなす角度が異なるのみで、形状、寸法
及び構成についてはともに同様であるので、以下、感磁
エレメント1′について述べる。Magnetically sensitive element 1' and magnetically sensitive element 2' differ only in the angle formed by the direction of magnetically sensitive resistance part B', and have the same shape, dimensions, and configuration. Therefore, hereinafter, magnetically sensitive element 1'Let's talk about.
第2図中、折り返し部A′は、感磁抵抗部B′とともに
強磁性体金属薄膜で一体的に形成される。In FIG. 2, the folded portion A' is formed integrally with the magnetosensitive resistance portion B' from a ferromagnetic metal thin film.
この場合、外部磁界(信号磁界))(exが、図中矢印
で示すように、感磁エレメント1′の感磁抵抗部B′の
長手方向に対して直交方向に作用したとき、折り返し部
A′と感磁抵抗部B′においてそれぞれの抵抗の変動方
向が互いに逆になり、感磁エレメント1′の全体の抵抗
の変化量を小さくする結果になる。これは、ジグザグ状
の折り返しパターンの折り返し部A′の数が多い場合、
または感磁抵抗部B′の長さlが短い場合に、折り返し
部A′の及ぼす影響は無視できなくなり、素子の動作精
度を低下させる原因になる。In this case, when the external magnetic field (signal magnetic field) ′ and magneto-sensitive resistor B′, the directions of resistance change are opposite to each other, resulting in a small amount of change in the overall resistance of magneto-sensitive element 1′. If there are many parts A',
Alternatively, if the length l of the magnetically sensitive resistive portion B' is short, the influence of the folded portion A' cannot be ignored, causing a reduction in the operational accuracy of the element.
一方、感磁抵抗部B′の線幅をWE 、折り返し部A′
の幅をwLとすると、外部磁界Hexの方向の折り返し
部A′の飽和磁界H9A及び感磁抵抗部B′の飽和磁界
Hssは、橿めて薄い膜で形成された本構造の素子では
近似的に次式で表わされる。On the other hand, the line width of the magnetic resistance part B' is WE, and the folded part A'
Let wL be the width of is expressed by the following formula.
HsA=Hk + 4 ycM s W L /T−=
(L)Hsa= Hk + 4 rc M s WE
/ T−(2)(11式及び(2)式において、Hkは
異方性磁界、4πMsは磁化であり、ともに用いられる
材料により定まる。また、Tは強磁性体薄膜の厚さであ
る。HsA=Hk+4ycMsWL/T-=
(L) Hsa= Hk + 4 rc M s WE
/T-(2) (In Equations 11 and (2), Hk is an anisotropic magnetic field and 4πMs is magnetization, both of which are determined by the materials used. Also, T is the thickness of the ferromagnetic thin film.
第2図から明らかなように、WL>WEであるので、T
1)式と(2)式からH8A<H2Sの関係が成立する
。このときの折り返し部A′と感磁抵抗部B′での外部
磁界Hexに対する抵抗の変化率を示したのが第3図の
グラフであり、第3図中、aは折り返し部A′の抵抗変
化率、bは感磁抵抗部B′の抵抗変化率をそれぞれ示す
、この第3図からも、折り返し部A′と感磁抵抗部B′
とで飽和磁界が異なることが明らかである。As is clear from Figure 2, since WL>WE, T
From equations 1) and 2, the relationship H8A<H2S is established. The graph in FIG. 3 shows the rate of change in resistance with respect to the external magnetic field Hex at the folded part A' and the magnetosensitive resistance part B' at this time. In FIG. 3, a is the resistance of the folded part A'. The rate of change and b indicate the rate of change in resistance of the magneto-sensitive resistor section B'. From this figure, it can be seen that the folded section A' and the magneto-sensitive resistor section B'
It is clear that the saturation magnetic field is different between
このように、折り返し部A′の飽和磁界H8Aと感磁抵
抗部B′の飽和磁界Hsaとが異なるため、感磁抵抗部
B′の長さlが短(且つ折り返しの回数と折り返し部A
′の幅WLとの積が大きいパターン形状の場合、H8A
とHsaの混在により素子の出力信号波形が歪むことに
なる。In this way, since the saturation magnetic field H8A of the folded part A' and the saturation magnetic field Hsa of the magnetosensitive resistance part B' are different, the length l of the magnetosensitive resistance part B' is short (and the number of folds and the folded part A
' If the pattern shape has a large product of width WL, H8A
The mixture of Hsa and Hsa distorts the output signal waveform of the element.
〈発明の目的〉
本発明は上記事情に鑑みてなされさものであり、その目
的は、感磁エレメントにおける折り返し部の悪影響を除
去した磁気抵抗効果型磁電変換素子を提供することであ
る。<Objective of the Invention> The present invention has been made in view of the above circumstances, and its object is to provide a magnetoresistive effect type magnetoelectric transducer in which the adverse effects of the folded portion of the magnetic sensing element are eliminated.
〈発明の構成〉
本発明においては、磁気抵抗効果を有する強磁性体金属
薄膜で構成され、ジグザグ状の折り返し形状にすること
により上記強磁性体金属薄膜で形成されφ感磁抵抗部の
長さを長くした磁電変換素子において、上記ジグザグ状
の折り返し形状である素子の折り返し部分を非磁性且つ
導電性の全屈で形成したことを特徴とする。<Structure of the Invention> In the present invention, the ferromagnetic metal thin film is formed with a ferromagnetic metal thin film having a magnetoresistive effect, and the length of the φ magneto-sensitive resistor part is formed by forming the ferromagnetic metal thin film into a zigzag folded shape. The magnetoelectric transducer is characterized in that the folded portion of the element having the above-mentioned zigzag folded shape is formed with a non-magnetic and conductive fully bent shape.
〈実施例〉 以下、本発明の一実施例を説明する。<Example> An embodiment of the present invention will be described below.
第1図は磁気抵抗効果型磁電変換素子の構成を示す、感
磁エレメント1及び感磁エレメント2は、それぞれ複数
の同一方向の感磁抵抗部Bと折り返し部Aとからなるジ
グザグ状の折り返しパターン形状に形成される。感磁エ
レメント1の一方の端部に電源用端子3が形成され、感
磁エレメント1と感磁エレメント2との接続部に出力信
号取出し用端子4が形成され、感磁エレメント2の他方
の端部に接地用端子5が形成される。感磁エレメント1
と感磁エレメント2とは、それぞれの感磁抵抗部Bの方
向が互いに直交するように配置されている。なお、感磁
エレメント1の感磁抵抗部Bと感磁エレメント2の感磁
抵抗部Bとがなす角度は任意でもよいことは前述の従来
例と同様である。FIG. 1 shows the configuration of a magnetoresistive magnetoelectric transducer. The magnetically sensitive element 1 and the magnetically sensitive element 2 each have a zigzag folded pattern consisting of a plurality of magnetically sensitive resistance parts B and folded parts A in the same direction. formed into a shape. A power supply terminal 3 is formed at one end of the magnetically sensitive element 1, an output signal extraction terminal 4 is formed at the connection between the magnetically sensitive element 1 and the magnetically sensitive element 2, and the other end of the magnetically sensitive element 2 is formed. A grounding terminal 5 is formed at the portion. Magnetic sensing element 1
and the magneto-sensitive element 2 are arranged so that the directions of their respective magneto-sensitive resistance portions B are orthogonal to each other. Note that the angle formed by the magnetically sensitive resistance portion B of the magnetically sensitive element 1 and the magnetically sensitive resistance portion B of the magnetically sensitive element 2 may be arbitrary, as in the prior art example described above.
第1図中、感磁エレメント1と感磁エレメント2のそれ
ぞれの感磁抵抗部Bは、Ni−Co。In FIG. 1, the magnetically sensitive resistance portions B of the magnetically sensitive element 1 and the magnetically sensitive element 2 are made of Ni-Co.
Ni−Feなどの磁気抵抗効果を有する強磁性体金属薄
膜で形成される。一方、感磁エレメント1と感磁エレメ
ント2のそれぞれのジグザグ状の折り返しパターンの折
り返し部Aは、図中斜線で示すように、非磁性で且つ導
電性の金属例えばAI、Cu、Auなどの薄膜で形成さ
れる。そして、感磁抵抗部Bはこれらの非磁性且つ導電
性の金属薄膜で互いに接続される。さらに、本来感磁抵
抗部として構成されない電源用端子3、出力信号取出し
用端子4及び接地用端子5も上述の非磁性且つ導電性の
金属薄膜で形成される。It is formed of a ferromagnetic metal thin film having a magnetoresistive effect, such as Ni-Fe. On the other hand, the folded portion A of the zigzag folded pattern of the magnetically sensitive element 1 and the magnetically sensitive element 2 is made of a thin film of a nonmagnetic and conductive metal such as AI, Cu, or Au, as shown by diagonal lines in the figure. is formed. The magneto-sensitive resistance parts B are connected to each other by these non-magnetic and conductive metal thin films. Furthermore, the power supply terminal 3, the output signal extraction terminal 4, and the grounding terminal 5, which are not originally constituted as a magneto-sensitive resistor, are also formed of the above-mentioned non-magnetic and conductive metal thin film.
いま、外部磁界(信号磁界)Hexが図中矢印で示すよ
うに、感磁エレメント1の感磁抵抗部Bの長手方向と直
交する方向に作用すると、この磁界Hexと同じ方向の
折り返し部Aが非磁性且つ導電性の金属で形成されてい
るので、折り返し部Aは磁気抵抗変化を生じず、感磁抵
抗部Bのみが磁気抵抗変化を生じることになる。したが
って、感磁抵抗部Bの長さβが短い場合またジグザグ状
の折り返しの回数と折り返し部Aの幅Wしとの積が大き
い場合においても、磁界Hexの強さに正確に対応した
抵抗変化を示す信号が出力信号取出し用端子4において
得られることになる。Now, when an external magnetic field (signal magnetic field) Hex acts in a direction perpendicular to the longitudinal direction of the magnetically sensitive resistance part B of the magnetically sensitive element 1, as shown by the arrow in the figure, the folded part A in the same direction as this magnetic field Hex Since it is formed of a nonmagnetic and conductive metal, the folded portion A does not cause a change in magnetoresistance, and only the magnetoresistive portion B causes a change in magnetoresistance. Therefore, even when the length β of the magnetosensitive resistance part B is short, or even when the product of the number of folds in a zigzag pattern and the width W of the folded part A is large, the resistance changes accurately in accordance with the strength of the magnetic field Hex. A signal indicating this will be obtained at the output signal extraction terminal 4.
また、折り返し部A及び端子3.4.5を非磁性且つ導
電性の金属薄膜で形成することにより、感磁エレメント
l、2における飽和磁界は感磁抵抗部Bの飽和磁界Hs
eのみとなり、従来のように異なった飽和磁界が混在し
ないので、出力信号波形の歪みが緩和される。In addition, by forming the folded portion A and the terminals 3.4.5 with a non-magnetic and conductive metal thin film, the saturation magnetic field in the magneto-sensitive elements 1 and 2 is the same as the saturation magnetic field Hs of the magneto-sensitive resistance portion B.
e, and different saturation magnetic fields do not coexist as in the conventional case, so distortion of the output signal waveform is alleviated.
さらに、本発明の波及効果として、磁性体の磁化過程で
常に問題となるバルクハウゼンジャンプについても同時
に改善できる。このバルクハウゼンジャンプは、外部磁
界が作用するときに、第2図中、折り返し部A′から磁
区が伸び始め、これが感磁、抵抗部B′の一部分に進入
して起るものと考えられており、本発明の構成を用いる
ことにより、バルクハウゼンノイズも緩和される。Furthermore, as a ripple effect of the present invention, Barkhausen jump, which is always a problem in the magnetization process of magnetic materials, can be improved at the same time. This Barkhausen jump is thought to occur when the magnetic domain begins to extend from the folded part A' in Figure 2 when an external magnetic field is applied, and this enters a part of the magnetically sensitive and resistive part B'. In addition, by using the configuration of the present invention, Barkhausen noise is also alleviated.
〈発明の効果〉
以上説明したように本発明においては、ジグザグ状の折
り返し形状である磁電変換素子の折り返し部分を非磁性
且つ導電性の金属で形成するようにしたから、磁界に正
確に対応した出力信号が得られるとともに、出力信号波
形の歪みを無くすることができる。さらに、バルクハウ
ゼンノイズも緩和される。<Effects of the Invention> As explained above, in the present invention, since the folded portion of the magnetoelectric conversion element having a zigzag folded shape is formed of a non-magnetic and conductive metal, it can accurately respond to the magnetic field. Not only can an output signal be obtained, but also distortion of the output signal waveform can be eliminated. Furthermore, Barkhausen noise is also alleviated.
【図面の簡単な説明】
第1図は本発明の一実施例を示す平面図、第2図は従来
例を示す平面図、第3図は外部磁界と感磁エレメントの
抵抗変化率との関係を示すグラフである。
1.2・−・感磁エレメント
A・・−・折り返し部
B・−感磁抵抗部
特許出願人 シャープ株式会社
代 理 人 弁理士 西1) 新
第3図
り)4峰界H−x[Brief Description of the Drawings] Fig. 1 is a plan view showing one embodiment of the present invention, Fig. 2 is a plan view showing a conventional example, and Fig. 3 is the relationship between the external magnetic field and the rate of change in resistance of the magnetic sensing element. This is a graph showing. 1.2... Magnetically sensitive element A... Folded part B... Magnetically sensitive resistor part Patent applicant Sharp Co., Ltd. Agent Patent attorney Nishi 1) New third diagram) Four-peak field H-x
Claims (1)
れ、ジグザグ状の折り返し形状にすることにより上記強
磁性体金属薄膜で形成される感磁性抵抗部の長さを長く
した磁電変換素子において、上記ジグザグ状の折り返し
形状である素子の折り返し部分を非磁性且つ導電性の金
属で形成したことを特徴とする磁電変換素子。(1) In a magnetoelectric transducer that is composed of a ferromagnetic metal thin film having a magnetoresistive effect, and has a zigzag folded shape to increase the length of the magnetosensitive resistance part formed of the ferromagnetic metal thin film. . A magnetoelectric transducer, characterized in that the folded portion of the element having the zigzag folded shape is formed of a nonmagnetic and conductive metal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59179906A JPS6158287A (en) | 1984-08-29 | 1984-08-29 | Magnetoelectric conversion element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59179906A JPS6158287A (en) | 1984-08-29 | 1984-08-29 | Magnetoelectric conversion element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6158287A true JPS6158287A (en) | 1986-03-25 |
Family
ID=16073973
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59179906A Pending JPS6158287A (en) | 1984-08-29 | 1984-08-29 | Magnetoelectric conversion element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6158287A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005183614A (en) * | 2003-12-18 | 2005-07-07 | Yamaha Corp | Magnetic sensor |
JP2018063204A (en) * | 2016-10-14 | 2018-04-19 | 株式会社デンソー | Magnetism detection element |
-
1984
- 1984-08-29 JP JP59179906A patent/JPS6158287A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005183614A (en) * | 2003-12-18 | 2005-07-07 | Yamaha Corp | Magnetic sensor |
JP2018063204A (en) * | 2016-10-14 | 2018-04-19 | 株式会社デンソー | Magnetism detection element |
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