JPS6157516U - - Google Patents
Info
- Publication number
- JPS6157516U JPS6157516U JP14238284U JP14238284U JPS6157516U JP S6157516 U JPS6157516 U JP S6157516U JP 14238284 U JP14238284 U JP 14238284U JP 14238284 U JP14238284 U JP 14238284U JP S6157516 U JPS6157516 U JP S6157516U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heater
- plasma cvd
- utility
- model registration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 6
- 238000005266 casting Methods 0.000 claims description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- 229910001369 Brass Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000010951 brass Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Description
第１図および第２図はこの考案による基板加熱
装置の一実施例の要部を示す図で、第１図は平面
図、第２図は側面図、第３図は第１図の基板加熱
装置を採用したプラズマＣＶＤ装置の縦断面図、
第４図は従来のプラズマＣＶＤ装置の一例を示す
縦断面図である。
１…真空容器、５…薄膜生成基板、１０…鋳込
みヒータ、１１…ヒータ、１２…鋳込みベース。
1 and 2 are diagrams showing the main parts of an embodiment of the substrate heating device according to this invention, in which FIG. 1 is a plan view, FIG. 2 is a side view, and FIG. A vertical cross-sectional view of a plasma CVD device employing the device,
FIG. 4 is a longitudinal sectional view showing an example of a conventional plasma CVD apparatus. DESCRIPTION OF SYMBOLS 1... Vacuum container, 5... Thin film production board, 10... Casting heater, 11... Heater, 12... Casting base.
Claims (1)
ラズマを利用して薄膜を形成するプラズマＣＶＤ
装置の前記基板を加熱する装置において、前記基
板の加熱に鋳込みヒータを用いたことを特徴とす
るプラズマＣＶＤ装置の基板加熱装置。 (2) 実用新案登録請求の範囲第１項記載の基板
加熱装置において、前記鋳込みヒータの鋳込みベ
ースの材料にアルミニウムまたは黄銅を用いると
ともに平板状に形成したことを特徴とするプラズ
マＣＶＤ装置の基板加熱装置。[Claims for Utility Model Registration] (1) Plasma CVD, which uses plasma to form a thin film on a substrate heated to a predetermined temperature in vacuum.
A substrate heating device for a plasma CVD device, characterized in that the device heats the substrate of the device, using a cast-in heater to heat the substrate. (2) Utility model registration Scope of Claim 1 In the substrate heating apparatus of claim 1, the casting base of the casting heater is made of aluminum or brass and is formed into a flat plate shape. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14238284U JPS6157516U (en) | 1984-09-20 | 1984-09-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14238284U JPS6157516U (en) | 1984-09-20 | 1984-09-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6157516U true JPS6157516U (en) | 1986-04-17 |
Family
ID=30700704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14238284U Pending JPS6157516U (en) | 1984-09-20 | 1984-09-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6157516U (en) |
-
1984
- 1984-09-20 JP JP14238284U patent/JPS6157516U/ja active Pending
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