JPS6157027A - Magnetoresistance effect head and its manufacture - Google Patents
Magnetoresistance effect head and its manufactureInfo
- Publication number
- JPS6157027A JPS6157027A JP17833284A JP17833284A JPS6157027A JP S6157027 A JPS6157027 A JP S6157027A JP 17833284 A JP17833284 A JP 17833284A JP 17833284 A JP17833284 A JP 17833284A JP S6157027 A JPS6157027 A JP S6157027A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic
- magnetic flux
- magnetoresistive
- ferromagnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
- G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
- G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
- G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は磁束誘導膜を設けた強磁性磁気抵抗効果素子に
係り、％に、波形ひずみが小さくできるとともに高感度
な磁気抵抗効果を得るのに好適な磁気ニットおよびその
製造法に関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a ferromagnetic magnetoresistive element provided with a magnetic flux guiding film, and is capable of reducing waveform distortion to % and obtaining a highly sensitive magnetoresistive effect. This invention relates to a suitable magnetic knit and its manufacturing method.
従来の強磁性磁気抵抗効果を利用した素子の強磁性磁気
抵抗効果膜には８２重量％Ｎｉ１８重＠％Ｆｅ合金であ
条パーマロイが広範に用いられている。膜厚が３０〜４
０ ｎｍのパーマロイ膜０強磁性磁気抵抗効果ΔＲ／Ｒ
，け約２．５チであシ、膜厚ＩＥＥＥ Ｔｒａｎｓａｃ
ｔｉｏｎｓ ｏｎ Ｍａｇｎｅｔｉｃｓ ＭＡ（）−１
１−（１９７５） １０１８−１０３８ には、パー
マロイ膜よりも強磁性磁気抵抗効果の大きい材料として
９２％Ｎｉ−８１Ｆｅ、６７’１６Ｎｉ−３０ＺＣｏ−
３４Ｃｒ。For the ferromagnetic magnetoresistive film of a conventional element utilizing the ferromagnetic magnetoresistive effect, strip permalloy made of an 82 weight % Ni 18 weight % Fe alloy is widely used. Film thickness is 30~4
0 nm permalloy film 0 ferromagnetic magnetoresistive effect ΔR/R
, Approximately 2.5 inches thick, film thickness IEEE Transac
tions on Magnetics MA()-1
1-(1975) 1018-1038, 92%Ni-81Fe, 67'16Ni-30ZCo- is used as a material with a larger ferromagnetic magnetoresistance effect than permalloy film.
34Cr.
（７０−９０）％Ｎｉ （１０〜３０）ＩＣｏが記載
されている。パーマロイよりも強磁性磁気抵抗効果の大
きいこれら公知の磁性膜には次のような欠点があった。(70-90)%Ni(10-30)ICo is described. These known magnetic films, which have a greater ferromagnetic magnetoresistance effect than permalloy, have the following drawbacks.
即ち、膜独自の異方性磁界が大きいため、異方性磁界よ
シも小さな磁場では大きな磁気抵抗効果は得られない。That is, since the anisotropic magnetic field unique to the film is large, a large magnetoresistive effect cannot be obtained with a magnetic field that is even smaller than the anisotropic magnetic field.
更に、飽和磁束密度も大きくなるため、反磁場が大きく
なり、低磁場の下では磁気抵抗効果は一段と小さくなる
。即ち、磁気抵抗効果素子としての感度は低いという欠
点があった。Furthermore, since the saturation magnetic flux density also increases, the demagnetizing field increases, and the magnetoresistive effect becomes even smaller under a low magnetic field. That is, there was a drawback that the sensitivity as a magnetoresistive element was low.
そこで、磁気抵抗効果素子の感度を高める方法として磁
束誘導膜を設けた素子構造が検討されている。Therefore, as a method of increasing the sensitivity of a magnetoresistive element, an element structure in which a magnetic flux guiding film is provided is being considered.
、； 代表例を第２図及び第３図に示す。,; Representative examples are shown in FIGS. 2 and 3.
第２図に示す構造では膜面に垂直方向に、磁気抵抗効果
膜と磁束誘導膜に重なる部分が生じ、この部分の磁気
□抵抗効果素子の感度が低くなるため、磁気抵抗効
果素子全体の感度も低下する。更に、磁束誘導膜に対し
て磁気抵抗効果膜は上・下いずれかの位置に配置されて
おり、上・丁卯対称な構造になるため、出力波形も非対
称になるという欠点があった。In the structure shown in Figure 2, there is a part where the magnetoresistive film and the magnetic flux guiding film overlap in the direction perpendicular to the film surface, and the magnetism in this part
□Since the sensitivity of the resistive effect element decreases, the sensitivity of the entire magnetoresistive element also decreases. Furthermore, since the magnetoresistive film is placed either above or below the magnetic flux guiding film, resulting in a top-to-bottom symmetrical structure, the output waveform also becomes asymmetrical.
一方、第３図に示す構造ではこれらの欠点を改善してい
るが、磁束誘導膜と磁気抵抗効果膜との間にはすき間が
生じている。すき間の大きさは、薄膜作製プロセスによ
って限定され、通常のプロセスでは、約２μｍ以下にす
ることは困難である。On the other hand, although the structure shown in FIG. 3 improves these drawbacks, a gap is created between the magnetic flux guiding film and the magnetoresistive film. The size of the gap is limited by the thin film manufacturing process, and it is difficult to reduce the gap to about 2 μm or less using normal processes.
本発明は磁気抵抗効果膜と磁束誘導膜とを有する磁気抵
抗効果素子が、高感度でしかも、高出力化でき、出力波
形ひずみを小さくできる電磁変換装置を提供するにあ、
る。The present invention provides an electromagnetic transducer in which a magnetoresistive element having a magnetoresistive film and a magnetic flux guiding film has high sensitivity, can increase output, and can reduce output waveform distortion.
Ru.
本発明は磁気抵抗効果膜ストライプの逆パターンよシな
る磁束誘導膜上に非磁性絶縁層を設け、その絶縁層上に
磁気抵抗効果膜を作製することにより、磁束誘導膜の溝
内に磁気抵抗効果膜を配置す＾ことを特徴とする。その
際、磁束誘導膜のパターンは、磁気抵抗効果膜ストライ
プの逆パターンを用いている□ので、磁束誘導膜と６６
気抵抗効果膜との重なる部分もすき間も□はとんどなく
なる。The present invention provides a non-magnetic insulating layer on a magnetic flux guiding film with a reverse pattern of magnetoresistive film stripes, and by producing a magnetoresistive film on the insulating layer, magnetoresistive film is formed in the grooves of the magnetic flux guiding film. It is characterized by arranging an effect film. At that time, the pattern of the magnetic flux guiding film uses the reverse pattern of the magnetoresistive film stripe, so the magnetic flux guiding film and 66
There are almost no □ overlaps with the air resistance effect film and gaps.
また、磁気抵抗効果をもつ二゛ツケルーコバルト合金膜
は蒸着の間中、基板を挾んで平行に互いに直交するよう
に設置されたヘルムホルツコイルにより０．１〜１０Ｈ
１の繰返し周波数により、それ□ぞれ、２００ｅ〜８０
０ｅの直交スイッチング磁界が印加された。In addition, the two-layer cobalt alloy film with magnetoresistive effect was deposited by Helmholtz coils placed in parallel and orthogonal to each other with the substrate sandwiched between them for 0.1~10H during the deposition.
200e to 80, respectively, depending on the repetition frequency of 1
An orthogonal switching field of 0e was applied.
″ このような範囲の粂件下で蒸着されたニッケルーコ
バルト合金薄膜は一軸異方性を示し、その異方性磁界け
１００ｅ以下と良好な磁気抵抗効果をもつ磁性膜が得ら
糺る。 □ところで、蒸着′に際し、他の外
部磁界下及び−□方高の外部磁界下では、−軸異方性を
もつ膜を得□ることは可能であるが、異方性磁界が２０
０ｅ以上となり好ましくない。本発明のように蒸着膜堆
ｉ用の基板上に直交する方向に互に所定の周波数で繰り
返して外部磁界を印加すると、−軸異方性ことが出来る
。さらに、繰シ返し周波数及び膜面内に直交する方向の
磁界印加時間の比を適当に選ぶことによって磁性膜の異
方性磁界を゛１００ｅ以下資することができる。
、１発明の実施例□〕
一実施例の断面図を示す゛。A nickel-cobalt alloy thin film deposited under such a range of conditions exhibits uniaxial anisotropy, and a magnetic film with an anisotropic magnetic field of 100 e or less and a good magnetoresistive effect can be obtained. □By the way, during vapor deposition, it is possible to obtain a film with -axis anisotropy under other external magnetic fields and under an external magnetic field with a height in the -□ direction, but if the anisotropy magnetic field is 20
0e or more, which is not preferable. By repeatedly applying an external magnetic field at a predetermined frequency in directions perpendicular to each other on the substrate for depositing a deposited film as in the present invention, -axis anisotropy can be obtained. Furthermore, by appropriately selecting the repetition frequency and the ratio of the magnetic field application time in the direction orthogonal to the film plane, the anisotropic magnetic field of the magnetic film can be reduced to less than 100e.
, 1 Embodiment □] A sectional view of an embodiment is shown.
″磁束誘導膜上”２ 、 ”ａ上に非磁性絶縁膜４を設
け、その絶縁膜上に磁気抵抗効果膜１を磁束誘導膜２゜
′３め溝内に設ける。□ここで、磁気抵抗効果膜１′を
磁束誘導膜２，３め溝内に設けるために、磁束誘導膜２
．３の厚さが非磁性絶縁膜４と磁気抵抗効果膜１の厚さ
の和より厚くなるようにしである。A non-magnetic insulating film 4 is provided on the "magnetic flux guiding film" 2, "a", and a magnetoresistive film 1 is provided on the insulating film in the groove of the magnetic flux guiding film 2. In order to provide the effect film 1' in the grooves of the magnetic flux guiding films 2 and 3, the magnetic flux guiding film 2 is
．． The thickness of the nonmagnetic insulating film 4 and the magnetoresistive film 1 is made thicker than the sum of the thicknesses of the nonmagnetic insulating film 4 and the magnetoresistive film 1.
□さらに、磁束誘導膜のパターニングは磁気抵抗効果膜
用のマスクを、ネガ型レジストを用いてエツザングする
ことによシ、逆パターンを形成できる。□ Furthermore, when patterning the magnetic flux guiding film, a reverse pattern can be formed by etching the mask for the magnetoresistive film using a negative resist.
この際、エツチングにＸイオンミリング法を使うと、磁
束誘導膜のパターンエツジは一定のテーパ角を持つよう
にパターニングできる。このように、テーパ角を持たせ
ることにより、磁気抵抗効果膜のパターンエツジと磁束
誘導膜のパターンエッジとが同一面上で重なる部分もす
き間もほとんどなくなるようにパターニングできる。At this time, if the X ion milling method is used for etching, the pattern edge of the magnetic flux guiding film can be patterned to have a constant taper angle. In this manner, by providing a taper angle, patterning can be performed such that the pattern edge of the magnetoresistive film and the pattern edge of the magnetic flux guiding film overlap on the same plane and have almost no gap.
第４図は本発明の他の実施例の断面図を示す。FIG. 4 shows a cross-sectional view of another embodiment of the invention.
これＦｉＰＩＱ樹脂パターン１０上に磁気抵抗膜１を設
け、その上に非磁性絶縁膜４を堆積し、さらに磁束誘導
膜を設けている。この構造にすることによシ膜の垂直方
向に対して磁気抵抗効果膜は磁束誘導膜の溝内に設置で
きる。ここで、磁気抵抗効果膜と磁束誘導膜のパターン
エツジはホトレジストをポジ型とネガ型とを用いること
によシ、同一面上で重なる部分もすき間もほとんどなく
なるようにパターニングする。A magnetoresistive film 1 is provided on this FiPIQ resin pattern 10, a nonmagnetic insulating film 4 is deposited thereon, and a magnetic flux guiding film is further provided. With this structure, the magnetoresistive film can be placed in the groove of the magnetic flux guiding film in the direction perpendicular to the film. Here, the pattern edges of the magnetoresistive film and the magnetic flux guiding film are patterned using positive and negative photoresists so that there is almost no overlapping portion or gap on the same surface.
次に、本発明の構成に用いられる材料並びに形状につい
て説明する。即ち、磁気抵抗効果膜１としてはニッケル
ーコバルト合金膜を厚さ数百オングストロームで基板面
内に直交する方向に互いに所定の周波数で繰シ返し外部
磁界を印加しながら１．１
形成する。非磁性絶縁膜４にけ５ｉｆｔやＡ ｔ ２０
３などを数千オングストロームの厚さにし、磁束誘導膜
２，３けゝ！さ数千オングストローム−数ミクロンの形
状よりなる。なお、図中５．６は強磁性膜、７．８は非
磁性絶縁膜、９は基板、１０はＰＩＱ樹脂である。Next, materials and shapes used in the configuration of the present invention will be explained. That is, as the magnetoresistive film 1, a nickel-cobalt alloy film having a thickness of several hundred angstroms is formed by applying an external magnetic field repeatedly at a predetermined frequency in a direction perpendicular to the plane of the substrate. 5ift or At 20 on the non-magnetic insulating film 4
3, etc., to a thickness of several thousand angstroms, and a magnetic flux guiding film 2 or 3! It consists of a shape of several thousand angstroms to several microns. In the figure, 5.6 is a ferromagnetic film, 7.8 is a nonmagnetic insulating film, 9 is a substrate, and 10 is a PIQ resin.
本発明によれば、磁束誘導膜の溝内に磁気抵抗効果膜を
配置でき、しかも、磁束誘導膜と磁気抵抗効果膜との重
なりもすき間もほとんどなくすることができるので、高
感度の磁気抵抗効果素子が得られる。又、出力波形が対
称になるので波形ひずみを小さくできる。According to the present invention, it is possible to arrange the magnetoresistive film in the groove of the magnetic flux guiding film, and moreover, it is possible to almost eliminate the overlap and gap between the magnetic flux guiding film and the magnetoresistive film, so that the magnetoresistive film can be highly sensitive. An effect element is obtained. Furthermore, since the output waveform becomes symmetrical, waveform distortion can be reduced.
第１図は本発明の一実施例の断面図、第２図及び第３図
は従来の磁気抵抗効果膜と磁束誘導膜との関係を示す断
面図、第４図は本発明の他の実施例で、磁気抵抗効果膜
と磁束誘導膜との関係を示す断面図である。
１・・・磁気抵抗効果膜、２．３・・・磁束誘導膜、４
゜７．８・・・非磁性絶縁膜、５．６・・・強磁性膜、
９・・・基板、１０・・・ＰＩＱ樹脂。FIG. 1 is a sectional view of one embodiment of the present invention, FIGS. 2 and 3 are sectional views showing the relationship between a conventional magnetoresistive film and a magnetic flux guiding film, and FIG. 4 is another embodiment of the present invention. FIG. 3 is a cross-sectional view showing, as an example, the relationship between a magnetoresistive film and a magnetic flux guiding film. 1... Magnetoresistive film, 2.3... Magnetic flux guiding film, 4
゜7.8...Nonmagnetic insulating film, 5.6...Ferromagnetic film,
9...Substrate, 10...PIQ resin.
Claims (1)
誘導膜とより成る磁気抵抗効果ヘッドにおいて、 前記導電性強磁性膜が前記強磁性体磁束誘導膜の溝内に
配置され、しかも、同一面上では、前記導電性強磁性膜
および前記強磁性体磁束誘導膜が重なりもすき間もなく
配置されたことを特徴とする磁気抵抗効果ヘッド。 ２、通電性強磁性膜と強磁性体磁束誘導膜とが同一面上
では重なりもすき間もなく配置できるように、前記通電
性強磁性膜と強磁性体磁束誘導膜の間に非磁性絶縁膜を
介して、同一マスクで前記通電性強磁性膜にポジレジス
トを、前記強磁性体磁束誘導膜にネガレジストをそれぞ
れ用いてエッチングすることを特徴とする磁気抵抗効果
ヘッドの製造法。 ３、磁気抵抗効果をもつ磁性膜を製造するに当たり、ニ
ッケル−コバルト合金膜を蒸着し、蒸着の間中に蒸着面
で互に直交する方向に所定の周波数で外部磁界を交互に
印加しながら蒸着することを特徴とする特許請求の範囲
第２項記載の磁気抵抗効果ヘッドの製造法。[Scope of Claims] 1. A magnetoresistive head comprising a conductive ferromagnetic film having a magnetoresistive effect and a ferromagnetic flux guiding film, wherein the conductive ferromagnetic film is formed in a groove of the ferromagnetic flux guiding film. 1. A magnetoresistive head, characterized in that the conductive ferromagnetic film and the ferromagnetic flux guiding film are arranged within the same plane, with no overlap or gap between them. 2. A non-magnetic insulating film is provided between the conductive ferromagnetic film and the ferromagnetic flux-guiding film so that the conductive ferromagnetic film and the ferromagnetic flux-guiding film can be arranged on the same plane without overlapping or gaps. A method for manufacturing a magnetoresistive head, characterized in that the conductive ferromagnetic film is etched using a positive resist, and the ferromagnetic flux guiding film is etched using a negative resist using the same mask. 3. In manufacturing a magnetic film with magnetoresistive effect, a nickel-cobalt alloy film is deposited, and during the deposition, an external magnetic field is alternately applied at a predetermined frequency in directions orthogonal to each other on the deposition surface. A method of manufacturing a magnetoresistive head according to claim 2, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17833284A JPS6157027A (en) | 1984-08-29 | 1984-08-29 | Magnetoresistance effect head and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17833284A JPS6157027A (en) | 1984-08-29 | 1984-08-29 | Magnetoresistance effect head and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6157027A true JPS6157027A (en) | 1986-03-22 |
Family
ID=16046640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17833284A Pending JPS6157027A (en) | 1984-08-29 | 1984-08-29 | Magnetoresistance effect head and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6157027A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0239308U (en) * | 1988-09-07 | 1990-03-16 | ||
| EP0411915A2 (en) * | 1989-08-04 | 1991-02-06 | Matsushita Electric Industrial Co., Ltd. | Thin film magnetic head |
-
1984
- 1984-08-29 JP JP17833284A patent/JPS6157027A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0239308U (en) * | 1988-09-07 | 1990-03-16 | ||
| JPH0516642Y2 (en) * | 1988-09-07 | 1993-05-06 | ||
| EP0411915A2 (en) * | 1989-08-04 | 1991-02-06 | Matsushita Electric Industrial Co., Ltd. | Thin film magnetic head |
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