JP3766600B2 - Magnetic sensing element and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a magnetic detection element that detects a magnetic field using a magnetoresistive effect, and more particularly to a magnetic detection element that can reduce the effective track width and cope with a higher recording density and a method for manufacturing the same.
[0002]
[Prior art]
FIG. 27 is a cross-sectional view of a conventional magnetic detection element as seen from the side facing the recording medium.
[0003]
In the magnetic sensing element shown in FIG. 27, a lower gap layer 9 is stacked on the lower shield layer 8, and an antiferromagnetic layer 11 is formed on the lower gap layer 9 with an underlayer 10 interposed therebetween in the illustrated X direction. At the center in the X direction, the antiferromagnetic layer 11 is formed so as to protrude by a height dimension d1. A pinned magnetic layer 12, a nonmagnetic conductive layer 13, a free magnetic layer 14, and a protective layer 15 are formed on the protruding antiferromagnetic layer 11, and the laminate from the underlayer 10 to the protective layer 15 is a multilayer film. 16.
[0004]
The antiferromagnetic layer 11 is made of an antiferromagnetic material such as a Pt—Mn (platinum-manganese) alloy.
[0005]
The fixed magnetic layer 12 and the free magnetic layer 14 are formed of a Ni—Fe (nickel-iron) alloy, Co (cobalt), a Co—Fe (cobalt-iron) alloy, a Co—Fe—Ni alloy, or the like. The nonmagnetic conductive layer 13 is formed of a nonmagnetic conductive material having a low electrical resistance such as Cu (copper).
[0006]
27, from the width T8 of the antiferromagnetic layer 11 formed to extend in the X direction in the drawing to the side surfaces of the pinned magnetic layer 12, the nonmagnetic conductive layer 13, and the free magnetic layer 14. A buffer film made of Cr, etc. and a metal film 17 serving as an alignment film are formed. By forming the metal film 17, a bias magnetic field generated from a hard bias layer 18 described later can be increased.
[0007]
A hard bias layer 18 made of, for example, a Co—Pt (cobalt-platinum) alloy or a Co—Cr—Pt (cobalt-chromium-platinum) alloy is formed on the metal film 17.
[0008]
The hard bias layer 18 is magnetized in the X direction (track width direction) in the figure, and the magnetization of the free magnetic layer 14 is aligned in the X direction in the figure by a bias magnetic field from the hard bias layer 18 in the X direction.
[0009]
An intermediate layer 19 formed of a nonmagnetic material such as Ta is formed on the hard bias layer 18, and an electrode layer 20 formed of Cr, Au, Ta, W, or the like is formed on the intermediate layer 19. Is formed.
[0010]
Further, an upper gap layer 21 made of an insulating material is laminated on the multilayer film 16 and the electrode layer 20, and an upper shield layer 22 made of a magnetic material is formed on the upper gap layer 21.
[0011]
Here, the width dimension of the upper surface of the multilayer film 16 on which the electrode layer 20 is not formed is the optical track width dimension O-Tw.
[0012]
[Problems to be solved by the invention]
In the free magnetic layer 14, the magnetization in the vicinity of the side end thereof is easily fixed because it is affected by the strong magnetic field from the hard bias layers 18 and 18, and the magnetization is less likely to fluctuate with respect to the external magnetic field. As shown in FIG. 2, a dead area d with low reproduction sensitivity is formed near the side edge of the multilayer film 16. This insensitive area d hardly contributes to the reproduction output in the vicinity of both sides, and is merely an area for increasing the direct current resistance (DCR).
[0013]
In recent years, the recording density of magnetic recording media has been increased, and the track width Tw of the thin film magnetic element has been minimized in order to cope with it, and the ratio of the width dimension of the insensitive area to the track width Tw has increased. It has become difficult to accurately control the width dimension of the sensitivity region e that exhibits a resistance effect. Further, when the ratio of the width dimension of the insensitive area to the track width Tw increases, the reproduction output also decreases.
[0014]
As a method of reducing the width dimension of the dead region d, a method of reducing the thickness of the hard bias layer 18 and reducing the value of residual magnetization × film thickness is conceivable.
[0015]
However, when the hard bias layer 18 is simply thinned, the coercive force Hc and the squareness ratio of the hard bias layer 18 near the junction between the hard bias layer 18 and the free magnetic layer 14 are reduced, and the free magnetic layer 14 is stabilized. It will not be possible to keep it in a magnetic domain.
[0016]
The present invention is to solve the above-described conventional problems, and a magnetic detection element capable of reducing the width of a dead region in a multilayer film while stably maintaining a single magnetic domain state of a free magnetic layer, and It aims at providing the manufacturing method.
[0017]
[Means for Solving the Problems]
  The present inventionMagnetic sensing element inIs
  Multilayer film having an antiferromagnetic layer, a fixed magnetic layer whose magnetization direction is fixed by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic material layer, and a free magnetic layer whose magnetization fluctuates with respect to an external magnetic fieldHave
On both sides of the multilayer film, a first hard bias layer is formed of a hard magnetic material and aligns the magnetization direction of the free magnetic layer in a direction crossing the fixed magnetization direction of the fixed magnetic layer, and a first hard bias layer A second hard bias layer formed of a hard magnetic layer is provided on the bias layer,
The second hard bias layer is located farther from the side surface of the multilayer film than the first hard bias layer, and between the side surface of the multilayer film and the second hard bias layer and the first hard bias layer. A non-magnetic layer is interposed at a position overlapping the hard bias layer 1It is characterized by that.
[0018]
In the present invention, by reducing the film thickness of the first hard bias layer, the static magnetic field strength of the first hard bias layer that aligns the magnetization direction of the free magnetic layer is reduced, or the free magnetic layer And the ferromagnetic coupling of the first hard bias layer can be weakened. That is, the value of the residual magnetization × film thickness in the portion of the hard bias layer close to the free magnetic layer can be reduced.
[0019]
Therefore, the width of the dead area formed in the multilayer film can be reduced, the sensitivity area can be widened, and the sensitivity of the magnetic detection element can be improved.
[0020]
  Further, the side surface of the multilayer filmIncludes a nonmagnetic layer formed at a position overlapping the first hard bias layer, and a second hard bias layer is formed on the first hard bias layer away from the side surface of the multilayer film via the nonmagnetic layer. Is formed. thisThus, the thickness of the hard bias layer is increased, and the coercive force Hc and the squareness ratio of the hard bias layer can be increased. Therefore, even if a disturbance magnetic field exists, the free magnetic layer can be kept in a stable single domain state.
[0021]
In the present invention, in order to increase the coercive force Hc and the squareness ratio of the hard bias layer while reducing the width dimension of the insensitive region formed in the multilayer film, the film thickness of the first hard bias layer is increased. It is preferable to increase the thickness of the second hard bias layer.
[0022]
  The first hard bias layerofMulti-layer sideIsA side surface of the free magnetic layer;,It is preferable that the hard bias layer and the free magnetic layer are opposed to each other via a bias underlayer made of a nonmagnetic material and having a film thickness of 1 nm or less because the magnetic field becomes a magnetic continuum due to ferromagnetic coupling and stability is increased.
[0023]
  In the present invention, the multilayer film and the hard bias layer are a lower shield made of a magnetic material formed on a substrate.layerAn upper gap layer made of an insulating material is formed on the lower gap layer made of an insulating material and is laminated on the multilayer film and the hard bias layer, and a magnetic material is laminated on the upper gap layer. An upper shield layer made of
  Of the first hard bias layer and the second hard bias layer, a distance between the upper shield layer and the lower shield layer in a region overlapping only the first hard bias layer is Gls, and a position overlapping the center of the multilayer film. When the distance between the upper shield layer and the lower shield layer is Glc,
  It is preferable that the difference between Gls and Glc is set to be equal to or less than a value at which the effective track width of the magnetic detection element is 0.17 μm.
[0024]
Since the first hard bias layer is provided adjacent to both sides of the multilayer film, the distance Gls between the upper shield layer and the lower shield layer in a region overlapping only the first hard bias layer is the multilayer film. That is, the distance between the upper shield layer and the lower shield layer in the vicinity of both sides.
[0025]
When the distance between the upper shield layer and the lower shield layer in the vicinity of both sides of the multilayer film is increased, the distance is generated from the recording tracks on both sides of the recording track to be detected through the upper shield layer and the lower shield layer. The magnetic field from the recording medium easily enters the magnetic detection element, and the effective track width increases. That is, crosstalk between recording tracks tends to occur.
[0026]
In fact, as will be described later, as the difference between Gls and Glc increases, the effective track width of the magnetic detection element also increases.
[0027]
In the present invention, by setting the difference between Gls and Glc to be equal to or less than a predetermined value, the distance between the upper shield layer and the lower shield layer in the vicinity of both sides of the multilayer film is suppressed, and the effective track width is reduced. Can be small.
[0028]
Further, it is preferable that an insulating layer is formed so as to overlap a part on the first hard bias layer and all the regions on the second hard bias layer.
[0029]
When the insulating layer is formed, the upper shield in a region of the first hard bias layer and the second hard bias layer that overlaps only the first hard bias layer and does not overlap the insulating layer. When the distance between the upper shield layer and the lower shield layer is Glc, and the distance between the upper shield layer and the lower shield layer at the position overlapping the center of the multilayer film is Glc,
It is preferable that the difference between Gls and Glc is set to be equal to or less than a value at which the effective track width of the magnetic detection element is 0.17 μm.
[0030]
Moreover, it is preferable to set the values of Gls and Glc in a range satisfying Glc−20 nm ≦ Gls ≦ Glc + 90 nm. More preferably, the values of Gls and Glc are set in a range satisfying Glc−20 nm ≦ Gls ≦ Glc + 70 nm. More preferably, the values of Gls and Glc are set in a range satisfying Glc−20 nm ≦ Gls ≦ Glc + 30 nm.
[0031]
Or it is preferable to set the value of the said Gls and the said Glc in the range which satisfy | fills 0.67 <= Gls / Glc <= 2.50. More preferably, the values of Gls and Glc are set in a range satisfying 0.67 ≦ Gls / Glc ≦ 2.17. More preferably, the values of Gls and Glc are set in a range satisfying 0.67 ≦ Gls / Glc ≦ 1.50.
[0032]
Note that the Gls and Glc values may be Gls> Glc, Gls = Glc, or Gls <Glc within the above-described range of the Gls and Glc values.
[0033]
If Gls> Glc, the distance between the upper shield layer and the lower shield layer in the vicinity of both sides of the multilayer film is greater than the distance (gap length) between the upper shield layer and the lower shield layer in the region overlapping the multilayer film. large.
[0034]
If Gls = Glc, the distance between the upper shield layer and the lower shield layer in the vicinity of both sides of the multilayer film is the distance (gap length) between the upper shield layer and the lower shield layer in the region overlapping the multilayer film. equal.
[0035]
If Gls <Glc, the distance between the upper shield layer and the lower shield layer in the vicinity of both sides of the multilayer film is greater than the distance (gap length) between the upper shield layer and the lower shield layer in the region overlapping the multilayer film. small.
[0036]
  In the present invention,The nonmagnetic layer is a first electrode layer, and the first electrode layer isDirectly electrically connected to the multilayer filmRukoThus, an electric current can be effectively applied to the multilayer film.
[0037]
Furthermore, it is preferable to have a second electrode layer which is formed at a position overlapping the second hard bias layer and is directly electrically connected to the first electrode layer.
[0038]
In order to reduce the effective track width, the thickness of the first hard bias layer and the first electrode layer is reduced, and the distance between the upper shield layer and the lower shield layer in the vicinity of both sides of the multilayer film is reduced. As a result, the DC resistance value of the magnetic detection element increases.
[0039]
When the second electrode layer is formed at a position overlapping the second hard bias layer, the DC resistance of the magnetic sensing element is reduced while reducing the distance between the upper shield layer and the lower shield layer in the vicinity of both sides of the multilayer film. The value can be reduced.
[0040]
The angle formed between the plane parallel to the surface of the multilayer film and the tangent plane of the front edge of the second electrode layer is such that the plane parallel to the surface of the multilayer film and the tangent plane of the front edge of the first electrode layer are It is preferably smaller than the angle formed. The second electrode layer is preferably thicker than the first electrode layer.
[0041]
In the present invention, the DC resistance value of the magnetic detection element can be reduced by making the depth length in the height direction of the first electrode layer longer than the depth length in the height direction of the multilayer film.
[0042]
  The first electrode layer may be any one of W, Ta, Rh, Ir, and Ru so that smear is less likely to occur in the step of adjusting the DC resistance value by polishing the surface of the magnetic detection element facing the recording medium. Or a material having a low specific resistance such as one or more of Cr, Cu, Au and Ta. Is preferred.
The nonmagnetic layer may be an upper gap layer formed over the multilayer film, the first hard bias layer, and the second hard bias layer.
[0043]
The effective track width is measured by a full track profile method or a micro track profile method. The full track profile method will be described below with reference to FIG.
[0044]
A signal is recorded on a recording medium with a recording track having a recording track width Ww wider than the element width of the magnetic detection element R, and the magnetic detection element R is scanned in the track width direction (X direction) on the recording track. Then, the relationship between the position of the magnetic detection element R in the recording track width direction (X direction) and the reproduction output is measured. The measurement result is shown on the upper side of FIG.
[0045]
Looking at the reproduction waveform of this measurement result, it can be seen that the reproduction output increases near the center of the recording track, and the reproduction output decreases as the distance from the center of the recording track increases.
[0046]
Intersections of the tangent line at point Pa and point Pb where the reproduction output on the reproduction waveform is 50% of the maximum value and the X axis are point Pc and point Pd, respectively. The difference between the distance A between the points Pc and Pd and the distance (half-value width) B between the points Pa and Pb is the effective track width of the magnetic detection element. Here, the unit of the X axis is normalized so that the half-value width B = the recording track width Ww.
[0047]
  The method of manufacturing the magnetic detection element of the present invention includes:
  (A) forming a lower shield layer, a lower gap layer, and a multilayer film exhibiting a magnetoresistive effect on the substrate;
  (B) forming a first resist layer on the multilayer film;
  (C) cutting the region of the multilayer film that is not covered by the first resist layer;
  (D) A first hard bias layer is formed on both sides of the multilayer film.Further, a first electrode layer is formed on the first hard bias layer.And a process of
  (E) removing the first resist layer;
  (F) The second resist layer for lift-off in which the cut portion is formed is used as the multilayer film and the first film.electrodeForming on a region overlapping the layer;
  (G) masked by the second resist layerScraping off the first electrode layer that is not,Scraping the first hard bias layer to a predetermined thickness;
  (H) laminating a second hard bias layer on the first hard bias layer cut to a predetermined thickness;
  (I) removing the second resist layer;
It is characterized by having.
Or the manufacturing method of the magnetic sensing element of the present invention comprises
(J) forming a lower shield layer, a lower gap layer, and a multilayer film exhibiting a magnetoresistive effect on the substrate;
(K) forming a first resist layer on the multilayer film;
(L) a step of cutting a region of the multilayer film that is not covered by the first resist layer;
(M) forming a first hard bias layer on both side regions of the multilayer film;
(N) removing the first resist layer;
(O) forming a lift-off second resist layer in which a cut portion is formed on a region overlapping the multilayer film and the first hard bias layer;
(P) scraping the first hard bias layer not masked by the second resist layer to a predetermined thickness;
(Q) laminating a second hard bias layer on the first hard bias layer cut to a predetermined thickness;
  (R) removing the second resist layer;
(S) forming an upper gap layer over the multilayer film, over the first hard bias layer and the second hard bias layer;
It is characterized by having.
[0048]
  Note that (h)Process, or (q)In the processSaidPreferably, the second hard bias layer is formed thicker than the first hard bias layer.
[0049]
  The above (d) Step or (m)In the step, before forming the first hard bias layer, a step of forming a bias underlayer made of a non-magnetic material from the normal direction of the substrate has a step of forming the first hard bias layer on the multilayer film side. The side surface of the free magnetic layer can be in direct contact with the side surface of the free magnetic layer, or the side surface on the multilayer film side of the first hard bias layer can be the bias underlayer having a thickness of 1 nm or less made of the side surface of the free magnetic layer It is preferable that the hard bias layer and the free magnetic layer can be made a magnetic continuum by ferromagnetic coupling.
[0050]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a cross-sectional view of the magnetic detection element according to the first embodiment of the present invention as viewed from the side facing the recording medium.
[0051]
In FIG. 1, a synthetic ferri-pinned pinned magnetic layer 35 and a nonmagnetic material layer 36 comprising an underlayer 33, an antiferromagnetic layer 34, a first pinned magnetic layer 35a, a nonmagnetic intermediate layer 35b, and a second pinned magnetic layer 35c. A multilayer film T in which a synthetic ferrifree type free magnetic layer 37 composed of a second free magnetic layer 37a, a nonmagnetic intermediate layer 37b, a first free magnetic layer 37c, and a protective layer 38 are laminated is formed.
[0052]
Under the multilayer film T, a lower shield layer 31 and a lower gap layer 32 are formed on a substrate (not shown) via a base layer (not shown) made of an insulating material such as alumina. Yes.
[0053]
The antiferromagnetic layer 34 in the multilayer film T is extended in the X direction in the drawing, and the upper surface of the extension 34b, the side surface of the pinned magnetic layer 35, the side surface of the nonmagnetic material layer 36, and the side surface of the second free magnetic layer 37a. In contact with Cr, Ti, Mo, W₅₀Mo₅₀A bias underlayer 39 is formed by the above.
[0054]
A first hard bias layer 40 is formed on the bias base layer 39. In the first hard bias layer 40, the side surface 40 a on the multilayer film T side faces the side surface Ts of the multilayer film T with the bias base layer 39 interposed therebetween.
[0055]
A second hard bias layer 42 is stacked on the first hard bias layer 40. The side surface 42a on the multilayer film T side of the second hard bias layer 42 is provided at a position separated from the side surface Ts of the multilayer film T by a predetermined distance Sp. The predetermined distance Sp is set as a distance at which the magnetic field generated from the second hard bias layer 42 does not directly act on the free magnetic layer 37 in the multilayer film T. The second hard bias layer 42 is stacked on and in direct contact with the first hard bias layer 40.
[0056]
The first hard bias layer 40 and the second hard bias layer 42 are made of, for example, a Co—Pt (cobalt-platinum) alloy, a Co—Cr—Pt (cobalt-chromium-platinum) alloy, or the like in the X direction ( Magnetized in the track width direction).
[0057]
An intermediate layer 41 made of a nonmagnetic material such as Ta is formed on the first hard bias layer 40. On the intermediate layer 41, Cr, Au, Ta, W, Rh, Ir, Ru, or the like is formed. The formed electrode layer (first electrode layer) 43 is formed.
[0058]
Since the electrode layer 43 is formed at a position overlapping the first hard bias layer 40 and is directly electrically connected to the multilayer film T, a current can be effectively applied to the multilayer film T.
[0059]
An upper gap layer 44 is formed on the surface of the multilayer film T, the surface of the electrode layer 43, and the surface of the second hard bias layer 42, and an upper shield 45 is formed on the upper gap layer 44. The upper shield layer 45 is covered with a protective layer 46 made of an inorganic insulating material. Further, after forming an inductive head for recording on the upper shield layer 45, the whole may be covered with a protective layer.
[0060]
Lower shield layer 31, lower gap layer 32, underlayer 33, antiferromagnetic layer 34, pinned magnetic layer 35, nonmagnetic material layer 36, free magnetic layer 37, protective layer 38, bias underlayer 39, first hard bias layer 40, the intermediate layer 41, the second hard bias layer 42, the electrode layer 43, the upper gap layer 44, the upper shield layer 45, and the protective layer 46 are formed by a thin film formation process such as sputtering or vapor deposition.
[0061]
The lower shield layer 31 and the upper shield layer 45 are formed using a magnetic material such as NiFe. The lower shield layer 31 and the upper shield layer 45 preferably have easy axes of magnetization oriented in the track width direction (X direction in the drawing). The lower shield layer 31 and the upper shield layer 45 may be formed by an electrolytic plating process.
[0062]
The lower gap layer 32, the upper gap layer 44, and the protective layer 46 are made of Al.₂O_ThreeAnd SiO₂It is formed using a nonmagnetic inorganic material.
The underlayer 33 is formed using Ta, NiFeCr, or the like.
[0063]
The antiferromagnetic layer 34 is a PtMn alloy or an X—Mn alloy (where X is one or more elements of Pd, Ir, Rh, Ru, Os, Ni, and Fe), Alternatively, Pt—Mn—X ′ (where X ′ is one or more elements of Pd, Ir, Rh, Ru, Au, Ag, Os, Cr, Ni, Ar, Ne, Xe, Kr) ) Made of alloy.
[0064]
These alloys have an irregular face-centered cubic structure (fcc) immediately after film formation, but undergo structural transformation to a CuAuI-type ordered face-centered tetragonal structure (fct) by heat treatment.
[0065]
The film thickness of the antiferromagnetic layer 34 is 80 to 300 mm, for example 200 mm, near the center in the track width direction.
[0066]
Here, in the PtMn alloy and the X-Mn alloy for forming the antiferromagnetic layer 34, it is preferable that Pt or X is in the range of 37 to 63 at%. In the PtMn alloy and the alloy represented by the formula of X—Mn, it is more preferable that Pt or X is in the range of 47 to 57 at%. Unless otherwise specified, the upper and lower limits of the numerical range indicated by means the following.
[0067]
In the alloy represented by the formula of Pt—Mn—X ′, X ′ + Pt is preferably in the range of 37 to 63 at%. In the alloy represented by the formula of Pt—Mn—X ′, X ′ + Pt is more preferably in the range of 47 to 57 at%. Further, in the alloy represented by the formula of Pt—Mn—X ′, X ′ is preferably in the range of 0.2 to 10 at%. However, when X ′ is one or more elements of Pd, Ir, Rh, Ru, Os, Ni, and Fe, X ′ may be in the range of 0.2 to 40 at%. preferable.
[0068]
An antiferromagnetic layer 34 that generates a large exchange coupling magnetic field with the first pinned magnetic layer 35a can be obtained by using these alloys and heat-treating them. In particular, in the case of a PtMn alloy, an excellent antiferromagnetic layer 34 having an exchange coupling magnetic field of 48 kA / m or more, for example, exceeding 64 kA / m, and an extremely high blocking temperature of 380 ° C. at which the exchange coupling magnetic field is lost is obtained. Can do.
[0069]
The first pinned magnetic layer 35a and the second pinned magnetic layer 35c are formed of a ferromagnetic material, for example, NiFe alloy, Co, CoFeNi alloy, CoFe alloy, CoNi alloy, etc. It is preferably formed of an alloy or Co. The first pinned magnetic layer 35a and the second pinned magnetic layer 35c are preferably formed of the same material.
[0070]
The nonmagnetic intermediate layer 35b is formed of a nonmagnetic material, and is formed of one kind of Ru, Rh, Ir, Cr, Re, or Cu or an alloy of two or more kinds thereof. In particular, it is preferably formed of Ru.
[0071]
The nonmagnetic material layer 36 is a layer that prevents the magnetic coupling between the pinned magnetic layer 35 and the free magnetic layer 37 and that mainly causes a sense current to flow. The nonmagnetic material layer 36 is a non-conductive material such as Cu, Cr, Au, or Ag. Preferably, it is formed of a magnetic material. In particular, it is preferably formed of Cu.
[0072]
The first free magnetic layer 37c and the second free magnetic layer 37a are formed of a ferromagnetic material, for example, NiFe alloy, Co, CoFeNi alloy, CoFe alloy, CoNi alloy, etc. It is preferably formed of an alloy, a CoFeNi alloy, or a CoFe alloy.
[0073]
The nonmagnetic intermediate layer 37b is formed of a nonmagnetic material, and is formed of one kind of Ru, Rh, Ir, Cr, Re, or Cu or an alloy of two or more kinds thereof. In particular, it is preferably formed of Ru.
[0074]
The protective layer 38 is formed using Ta or the like.
The bias underlayer 39 has a crystal structure of bcc (body-centered cubic lattice), Cr, Ti, Mo, W₅₀Mo₅₀When the underlayer is formed using, for example, the coercive force and the squareness ratio of the first hard bias layer 40 and the second hard bias layer 42 are increased, and the bias magnetic field can be increased.
[0075]
The side surface 40a of the first hard bias layer 40 on the side facing the multilayer film T faces only the side surface of the pinned magnetic layer 35, the side surface of the nonmagnetic material layer 36, and the side surface of the second free magnetic layer 37a. It does not face the side surface of the first free magnetic layer 37c. Due to the bias magnetic field in the X direction from the hard bias layer 40, the magnetization of the second free magnetic layer 37a is aligned in the X direction in the drawing.
[0076]
In the free magnetic layer 37, a second free magnetic layer 37a and a first free magnetic layer 37c having different magnetic moments are stacked via a nonmagnetic intermediate layer 37b, and the second free magnetic layer 37a and the first free magnetic layer 37c are stacked. This is a ferrimagnetic state in which the magnetization direction of the layer 37c is antiparallel. At this time, the direction with a larger magnetic moment, for example, the magnetization direction of the second free magnetic layer 37a is directed to the direction of the magnetic field generated from the first hard bias layer 40, and the magnetization direction of the first free magnetic layer 37c is 180 degrees. It will be in the opposite direction.
[0077]
When the anti-parallel ferrimagnetic state in which the magnetization directions of the second free magnetic layer 37a and the first free magnetic layer 37c are 180 degrees different from each other is obtained, an effect equivalent to that of reducing the film thickness of the free magnetic layer 37 is obtained. The effective magnetic moment is reduced, the magnetization of the free magnetic layer 37 is easily changed, and the magnetic field detection sensitivity of the magnetic detection element is improved.
[0078]
The direction of the combined magnetic moment obtained by adding the magnetic moment of the second free magnetic layer 37 a and the magnetic moment of the first free magnetic layer 37 c becomes the magnetization direction of the free magnetic layer 37.
[0079]
However, only the magnetization direction of the second free magnetic layer 37 a contributes to the output in relation to the magnetization direction of the pinned magnetic layer 35.
[0080]
The first hard bias layer 40 only needs to align one of the magnetization directions of the second free magnetic layer 37a and the first free magnetic layer 37c constituting the free magnetic layer 37. In FIG. 1, only the magnetization direction of the second free magnetic layer 37a is aligned. When the magnetization direction of the second free magnetic layer 37a is aligned in a certain direction, the first free magnetic layer 37c is in a ferrimagnetic state in which the magnetization direction is antiparallel, and the entire magnetization direction of the free magnetic layer 37 is aligned in a certain direction. .
[0081]
In the present embodiment, the first hard bias layer 40 mainly applies a static magnetic field in the illustrated X direction to the second free magnetic layer 37a. Therefore, it is possible to suppress the magnetization direction (opposite to the X direction shown in the drawing) of the first free magnetic layer 37c from being disturbed by the static magnetic field in the X direction shown from the first hard bias layer 40.
[0082]
In FIG. 1, the first pinned magnetic layer 35 a and the second pinned magnetic layer 35 c having different magnetic moments are stacked via the nonmagnetic intermediate layer 35 b to function as one pinned magnetic layer 35.
[0083]
The first pinned magnetic layer 35 a is formed in contact with the antiferromagnetic layer 34, and is subjected to annealing in a magnetic field, whereby an exchange difference due to exchange coupling occurs at the interface between the first pinned magnetic layer 35 a and the antiferromagnetic layer 34. A isotropic magnetic field is generated, and the magnetization direction of the first pinned magnetic layer 35a is pinned in the Y direction in the figure. When the magnetization direction of the first pinned magnetic layer 35a is pinned in the Y direction in the figure, the magnetization direction of the second pinned magnetic layer 35c opposed via the nonmagnetic intermediate layer 35b is the magnetization direction of the first pinned magnetic layer 35a. And fixed in an antiparallel state.
[0084]
As described above, when the magnetization directions of the first pinned magnetic layer 35a and the second pinned magnetic layer 35c are antiparallel, the first pinned magnetic layer 35a and the second pinned magnetic layer 35c are separated from each other. Since the other magnetization direction is fixed to each other, the magnetization direction of the fixed magnetic layer 35 can be strongly fixed in a fixed direction as a whole.
[0085]
The direction of the combined magnetic moment obtained by adding the magnetic moment of the first pinned magnetic layer 35 a and the magnetic moment of the second pinned magnetic layer 35 c is the magnetization direction of the pinned magnetic layer 35.
[0086]
In FIG. 1, the first pinned magnetic layer 35a and the second pinned magnetic layer 35c are formed using the same material, and the respective magnetic moments are varied by varying the film thicknesses.
[0087]
Further, the demagnetizing field (dipole magnetic field) caused by the fixed magnetization of the first pinned magnetic layer 35a and the second pinned magnetic layer 35c cancels each other out of the static magnetic field coupling of the first pinned magnetic layer 35a and the second pinned magnetic layer 35c. Cancel by matching. Thereby, the contribution to the variable magnetization of the free magnetic layer 37 from the demagnetizing field (dipole magnetic field) due to the fixed magnetization of the fixed magnetic layer 35 can be reduced.
[0088]
Therefore, it becomes easier to correct the direction of the variable magnetization of the free magnetic layer 37 to a desired direction, and it is possible to obtain a spin valve thin film magnetic element with small asymmetry and excellent symmetry.
[0089]
Here, the asymmetry indicates the degree of asymmetry of the reproduction output waveform. When the reproduction output waveform is given, the asymmetry becomes small if the waveform is symmetric. Therefore, the closer the asymmetry is to 0, the better the reproduced output waveform is.
[0090]
The asymmetry is 0 when the direction of magnetization of the free magnetic layer 37 and the direction of fixed magnetization of the fixed magnetic layer 35 are orthogonal to each other. If the asymmetry deviates greatly, the information cannot be read accurately from the media, which causes an error. For this reason, the smaller the asymmetry, the more reliable the reproduction signal processing, and the better the spin valve thin film magnetic element.
[0091]
Further, the demagnetizing field (dipole magnetic field) Hd due to the fixed magnetization of the fixed magnetic layer has a non-uniform distribution that is large at the end and small at the center in the element height direction, and is a single magnetic domain in the free magnetic layer 37. However, if the pinned magnetic layer 35 has the above-described laminated structure, the dipole magnetic field Hd can be made substantially Hd = 0, thereby forming a domain wall in the free magnetic layer 37 and magnetizing. It is possible to prevent the occurrence of non-uniformity and Barkhausen noise.
[0092]
If an intermediate layer 41 made of Ta or Cr is provided between the electrode layer 43 and the first hard bias layer 40, thermal diffusion can be prevented, and the magnetic characteristics of the first hard bias layer 40 are deteriorated. Can be prevented.
[0093]
When Ta is used as the electrode layer 43, by providing the Cr intermediate layer 41, the crystal structure of Ta stacked on the upper layer of Cr can be easily changed to a low-resistance body-centered cubic structure.
[0094]
When Cr is used as the electrode layer 43, by providing the Ta intermediate layer 41, Cr grows epitaxially and the resistance value can be reduced.
[0095]
The magnetic detection element shown in FIG. 1 is a so-called spin-valve type magnetic detection element. The magnetization direction of the fixed magnetic layer 35 is appropriately fixed in a direction parallel to the Y direction in the figure, and the magnetization of the free magnetic layer 37. Are properly aligned in the illustrated X direction, and the magnetizations of the pinned magnetic layer 35 and the free magnetic layer 37 are orthogonal to each other. Then, the magnetization of the free magnetic layer 37 fluctuates with high sensitivity to an external magnetic field from the recording medium, and the electric resistance changes depending on the relationship between the fluctuation of the magnetization direction and the fixed magnetization direction of the fixed magnetic layer 35. A leakage magnetic field from the recording medium is detected by a voltage change based on the value change.
[0096]
However, it is the relative angle between the magnetization direction of the second pinned magnetic layer 35c and the magnetization direction of the second free magnetic layer 37a that directly contributes to the change (output) of the electrical resistance value. It is preferable that they are orthogonal in a state where the signal magnetic field is not applied.
[0097]
In the magnetic sensing element of the present embodiment, the strength of the magnetic field generated by the first hard bias layer 40 that aligns the magnetization directions of the second free magnetic layer 37a by reducing the film thickness t1 of the first hard bias layer 40. Can be weakened. That is, the value of the residual magnetization × film thickness of the first hard bias layer 40 in the portion close to the second free magnetic layer 37a can be reduced.
[0098]
Accordingly, the width of the insensitive area formed in the multilayer film T can be reduced, the sensitivity area can be widened, and the sensitivity of the magnetic detection element can be improved.
[0099]
Further, the second hard bias layer 42 is laminated in direct contact with the upper layer of the first hard bias layer 40 at a position separated from the side surface Ts of the multilayer film T by a predetermined distance Sp, whereby the film thickness of the hard bias layer H is increased. The thickness is increased and the coercive force Hc and the squareness ratio of the hard bias layer H can be increased. Therefore, even if a disturbance magnetic field exists, the free magnetic layer 37 can be kept in a stable single domain state.
[0100]
In the present embodiment, the thickness of the first hard bias layer 40 is increased in order to increase the coercive force Hc and the squareness ratio of the hard bias layer H while reducing the width dimension of the dead region formed in the multilayer film T. The film thickness t2 of the second hard bias layer is made thicker than t1.
[0101]
In FIG. 1, the second hard bias layer 42 is stacked on the upper layer of the first hard bias layer 40. However, even if the second hard bias layer 42 is stacked in direct contact with the lower layer of the first hard bias layer 40. Good.
[0102]
FIG. 2 is a cross-sectional view of the magnetic detection element according to the second embodiment of the present invention as viewed from the side facing the recording medium.
[0103]
In the magnetic detection element of FIG. 2, the film thickness t2 of the second hard bias layer 42 is made thicker than that of the magnetic detection element of FIG. 1, and as a result, both side portions of the upper shield layer 45 are folded upward (Y direction) in the figure. It differs from the magnetic sensing element of FIG. 1 only in that it is bent and the distance between the upper shield layer 45 and the lower shield layer 31 is increased.
[0104]
When the distance between the upper shield layer 45 and the lower shield layer 31 in the vicinity of both sides of the multilayer film T increases, a magnetic field easily enters between the upper shield layer 45 and the lower shield layer 31, and the effective track width E-Tw Becomes larger. Then, the magnetic field from the recording medium generated from the recording tracks on both sides of the recording track to be detected easily enters the magnetic detection element, and crosstalk between the recording tracks easily occurs.
[0105]
Therefore, in the present embodiment, the distance between the upper shield layer 45 and the lower shield layer 31 in the region S1 of the first hard bias layer 40 and the second hard bias layer 42 that overlaps only the first hard bias layer 40 is defined as Gls. When the distance between the upper shield layer 45 and the lower shield layer 31 at the position overlapping the center C of the multilayer film is Glc, the difference value between the Gls and Glc is set to a predetermined value or less, whereby the multilayer film T An increase in the distance between the upper shield layer 45 and the lower shield layer 31 in the vicinity of both sides is suppressed, and the effective track width E-Tw can be reduced.
[0106]
As will be described later, when the value of the difference between Gls and Glc is reduced, the effective track width E-Tw of the magnetic detection element is also reduced. Here, it is preferable to set the value of the difference between Gls and Glc to be equal to or less than a value at which the effective track width E-Tw of the magnetic detection element is 0.17 μm.
[0107]
Note that the upper surface 42b of the second hard bias layer 42 may be located in the downward direction of the drawing (the direction opposite to Y) with respect to the extension line B of the upper surface 43a of the first electrode layer 43.
[0108]
FIG. 3 is a cross-sectional view of the magnetic detection element according to the third embodiment of the present invention as viewed from the side facing the recording medium.
[0109]
In the magnetic detection element shown in FIG. 3, in addition to the electrode layer (first electrode layer) 43 formed at a position overlapping the first hard bias layer 40, the second electrode layer 51 becomes the second hard bias layer 42. The magnetic detecting element shown in FIG. 1 is different from the magnetic detecting element shown in FIG. The second electrode layer 51 and the first electrode layer 43 are directly electrically connected.
[0110]
In order to reduce the effective track width E-Tw, the film thicknesses of the first hard bias layer 40 and the first electrode layer 43 are reduced, so that the space between the upper shield layer 45 and the lower shield layer 31 in the vicinity of both sides of the multilayer film T is reduced. When the distance is reduced, the DC resistance value of the magnetic detection element is increased. Therefore, if the second electrode layer 51 is formed at a position overlapping the second hard bias layer 42 as shown in FIG. 3, the distance between the upper shield layer 45 and the lower shield layer 31 in the vicinity of both sides of the multilayer film T. It is possible to reduce the DC resistance value of the magnetic detection element while reducing the.
[0111]
When the intermediate layer 50 made of Ta or Cr is provided between the second electrode layer 51 and the second hard bias layer 42, thermal diffusion can be prevented, and the magnetic characteristics of the second hard bias layer 42 are deteriorated. Can be prevented.
[0112]
In the case where Ta is used as the second electrode layer 51, by providing the Cr intermediate layer 50, the crystal structure of Ta stacked on the upper layer of Cr can be easily changed to a low-resistance body-centered cubic structure.
[0113]
When Cr is used as the second electrode layer 51, by providing the Ta intermediate layer 50, Cr grows epitaxially and the resistance value can be reduced.
[0114]
The angle θ2 formed between the plane parallel to the surface of the multilayer film T and the tangent plane of the front edge of the second electrode layer 51 is the plane parallel to the surface of the multilayer film T and the tangent plane of the front edge of the first electrode layer 43. Is preferably smaller than the angle θ1 formed by. If θ1> θ2, the supply of current from the first electrode layer 43 directly connected to the multilayer film T to the multilayer film T can be stabilized.
[0115]
In order to suppress an increase in the distance between the upper shield layer 45 and the lower shield layer 31 in the vicinity of both sides of the multilayer film T and to reduce the DC resistance value of the magnetic detection element, the film of the second electrode layer 51 is used. The thickness t4 is preferably made larger than the film thickness t3 of the first electrode layer 43.
[0116]
The first electrode layer 43 and the second electrode layer 51 can be formed using W, Ta, Cr, Cu, Rh, Ir, Ru, Au, or the like as materials. In particular, the first electrode layer 43 that is electrically connected to the multilayer film T is subjected to W so that smear does not easily occur in the process of adjusting the DC resistance value by polishing the surface of the magnetic detection element facing the recording medium. , Ta, Rh, Ir, and Ru are preferably used, and the second electrode layer 51 is preferably formed using a material having a low specific resistance such as Cr, Cu, Au, and Ta.
[0117]
Further, in FIG. 3, an insulating layer 52 is formed so as to overlap a part on the first hard bias layer 40 and all the regions on the second hard bias layer 42, whereby the second electrode layer 51 and the upper part are formed. Electrical insulation between the shield layers 45 can be obtained more reliably.
[0118]
When the insulating layer 52 is formed, the upper shield in the region S1 of the first hard bias layer 40 and the second hard bias layer 42 that overlaps only the first hard bias layer 40 and does not overlap the insulating layer 52. When the distance between the layer 45 and the lower shield layer 31 is Gls, and the distance between the upper shield layer 45 and the lower shield layer 31 at the position overlapping the center C of the multilayer T is Glc, the difference between Gls and Glc Is preferably set to be equal to or less than a value at which the effective track width E-Tw of the magnetic detection element is 0.17 μm.
[0119]
In order to directly electrically connect the second electrode layer 51 and the first electrode layer 43, the lower surface 51a of the second electrode layer 51 is lower than the extension line B of the upper surface 43a of the first electrode layer 43 (see FIG. It is preferably located in the direction opposite to Y). However, the lower surface 51 a of the second electrode layer 51 may be formed at the same height as the extension line B of the upper surface 43 a of the first electrode layer 43, or the extension line B of the upper surface 43 a of the first electrode layer 43. Rather, it may be positioned in the upward direction (Y direction). In this case, the current passed through the second electrode layer 51 flows through the second hard bias layer 42 to the first electrode layer 43.
[0120]
Further, as shown in FIG. 4, only the second electrode layer 51 formed at a position overlapping the second hard bias layer 42 is formed, and the first electrode layer may not be formed.
[0121]
In the magnetic sensor of the embodiment shown in FIGS. 1 to 4, a raised portion 34a is formed in the central portion of the antiferromagnetic layer 34, and both sides of the raised portion 34a in the track width direction (X direction in the drawing). From the base end of the end surface, an extending portion 34b extending in the track width direction is formed.
[0122]
In the structure in which the extension portion 34b is formed in the antiferromagnetic layer 34 and the first hard bias layer 40 is laminated on the extension portion 34b via the bias base layer 39, the first hard bias layer 40 is free. The both side end surfaces of the magnetic layer 37 can be opposed to each other with a sufficient volume.
[0123]
However, as shown in FIG. 5, the extension 34 b may not be formed in the antiferromagnetic layer 34. In FIG. 5, the base layer 33 may be formed in contact with only the lower surface of the antiferromagnetic layer 34, and the bias base layer 39 may be in direct contact with the lower gap layer 32.
[0124]
1 to 5, the side surface 40a on the side facing the side surface Ts of the multilayer film T of the first hard bias layer 40 is the side surface of the fixed magnetic layer 35, which is nonmagnetic. It faces only the side surface of the material layer 36 and the side surface of the second free magnetic layer 37a, and does not face the side surface of the first free magnetic layer 37c. However, as shown in FIG. 6, the side surface 40a of the hard bias layer 40 includes the side surface of the pinned magnetic layer 35, the side surface of the nonmagnetic material layer 36, the second free magnetic layer 37a, the nonmagnetic intermediate layer 37b, and the first free layer. You may oppose the side surface of the magnetic layer 37c.
[0125]
FIG. 7 is a cross-sectional view of a magnetic detection element according to a seventh embodiment of the present invention as viewed from the side facing the recording medium.
[0126]
The magnetic detection element of the embodiment shown in FIG. 7 differs from the magnetic detection element of FIG. 3 only in that the first electrode layer 43 is formed to extend to the dead region d of the multilayer film T. ing.
[0127]
Due to the bias magnetic field in the X direction from the hard bias layer H, the magnetization of the free magnetic layer 37 is aligned in the X direction in the drawing.
[0128]
By the way, as shown in FIG. 7, the region located at the center of the multilayer film T is a sensitivity region e, and both sides thereof are insensitive regions d and D.
[0129]
In the sensitivity region e, the magnetization of the pinned magnetic layer 35 is appropriately pinned in the Z direction in the figure, and the magnetization of the free magnetic layer 37 is properly aligned in the X direction in the figure. Are perpendicular to each other. Then, the magnetization of the free magnetic layer 37 fluctuates with high sensitivity to an external magnetic field from the recording medium, and the electric resistance changes depending on the relationship between the fluctuation of the magnetization direction and the fixed magnetization direction of the fixed magnetic layer 35. A leakage magnetic field from the recording medium is detected by a voltage change based on the value change.
[0130]
That is, the sensitivity region e of the multilayer film T is a portion where the magnetoresistive effect is substantially exhibited, and the reproducing function works well in this portion.
[0131]
On the other hand, in the insensitive regions d and D located on both sides of the sensitivity region e, the magnetizations of the pinned magnetic layer 35 and the free magnetic layer 37 are strongly affected by the magnetization from the first hard bias layers 40 and 40, and are free. The magnetization of the magnetic layer 37 is less likely to fluctuate with respect to the external magnetic field. That is, the insensitive area d is an area where the magnetoresistive effect is weak and the reproduction function is lowered.
[0132]
In FIG. 7, since the first electrode layer 43 is formed to extend over the dead region d of the multilayer film T, the sense current from the first electrode layer 43 flows to the first hard bias layer 40. By increasing the proportion of the sense current flowing directly through the multilayer film T without passing through the first hard bias layer 40, and by extending the first electrode layer 43 to the dead region d, Since the junction area between the multilayer film T and the first electrode layer 43 is also increased, the direct current resistance value (DCR) can be lowered, and the reproduction characteristics can be improved.
[0133]
In addition, when the first electrode layer 43 is formed to extend on the insensitive region d, it is possible to suppress generation of noise due to a large amount of sense current flowing into the insensitive region d.
[0134]
FIG. 8 is a cross-sectional view of the magnetic detection element according to the eighth embodiment of the present invention as viewed from the side facing the recording medium.
[0135]
In the magnetic detection element shown in FIG. 8, the bias underlayer 39 is formed only on the extending portion 34 b of the antiferromagnetic layer 34. Accordingly, in the first hard bias layer 40, the side surface 40a on the multilayer film T side is in direct contact with the side surface of the second free magnetic layer 37a. Then, the first hard bias layer 40 and the second free magnetic layer 37a become a magnetic continuum, and it is possible to prevent a demagnetizing field from being generated at the side end portion of the second free magnetic layer 37a, thereby increasing stability. .
[0136]
Even when the bias underlayer 39 is formed on the side surface of the multilayer film T, the side surfaces of the first hard bias layer 40 and the second free magnetic layer 37a are not formed on the side surface of the second free magnetic layer 37a. Directly contacted.
[0137]
Alternatively, even if the bias underlayer 39 is formed between the first hard bias layer 40 and the second free magnetic layer 37a, the bias underlayer 39 between the first hard bias layer 40 and the second free magnetic layer 37a If the film thickness is 1 nm or less, the first hard bias layer 40 and the second free magnetic layer 37a become magnetically continuous through pinholes generated in the bias underlayer 39, and the side edges of the second free magnetic layer 37a. It is possible to prevent a demagnetizing field from being generated in the portion, and stability is increased.
[0138]
FIG. 9 is a cross-sectional view of the magnetic detection element according to the ninth embodiment of the present invention as viewed from the side facing the recording medium.
[0139]
In the magnetic detection element shown in FIG. 9, the multilayer film T1 is obtained by reversing the order of the multilayer films T of the magnetic detection elements shown in FIGS. In other words, in FIG. 9, a synthetic ferrifree free magnetic layer 37 including a first free magnetic layer 37c, a nonmagnetic intermediate layer 37b, and a second free magnetic layer 37a on the underlayer 33, a nonmagnetic material layer 36, A synthetic ferri-pinned pinned magnetic layer 35 comprising a second pinned magnetic layer 35c, a nonmagnetic intermediate layer 35b, and a first pinned magnetic layer 35a, an antiferromagnetic layer 34, and a protective layer 38 are laminated in succession.
[0140]
A bias underlayer 60 is formed of Cr or the like in contact with the upper surface of the underlayer 33 and the side surface of the second free magnetic layer 37a. A first hard bias layer 61 is formed on the bias underlayer 60. In the first hard bias layer 61, the side surface 61 a on the multilayer film T 1 side is opposed to the bias base layer 60.
[0141]
A second hard bias layer 63 is stacked on the first hard bias layer 61. The side surface 63a on the multilayer film T1 side of the second hard bias layer 63 is provided at a position separated from the side surface T1s of the multilayer film T1 by a predetermined distance Sp1. The predetermined distance Sp1 is set as a distance at which the magnetic field generated from the second hard bias layer 63 does not directly act on the free magnetic layer 37 in the multilayer film T1. The second hard bias layer 63 is stacked on and in direct contact with the first hard bias layer 61.
[0142]
The first hard bias layer 61 and the second hard bias layer 63 are made of, for example, a Co—Pt (cobalt-platinum) alloy, a Co—Cr—Pt (cobalt-chromium-platinum) alloy, or the like in the X direction ( Magnetized in the track width direction).
[0143]
An intermediate layer 62 made of a nonmagnetic material such as Ta is formed on the first hard bias layer 61, and a first electrode layer 64 is formed on the intermediate layer 62.
[0144]
Further, a second electrode layer 66 is formed at a position overlapping the second hard bias layer 63. The second electrode layer 66 and the first electrode layer 64 are directly electrically connected.
[0145]
When intermediate layers 62 and 65 made of Ta or Cr are provided between the first electrode layer 64 and the first hard bias layer 61 and between the second electrode layer 66 and the second hard bias layer 63, thermal diffusion is performed. And the deterioration of the magnetic characteristics of the first hard bias layer 61 and the second hard bias layer 63 can be prevented.
[0146]
When Ta is used as the first electrode layer 64 and the second electrode layer 66, the intermediate layer 62, 65 of Cr is provided to change the crystal structure of Ta stacked on the upper layer of Cr to a low-resistance body-centered cubic structure. It becomes easy.
[0147]
Further, when Cr is used as the first electrode layer 64 and the second electrode layer 66, by providing the Ta intermediate layers 62 and 65, Cr grows epitaxially, and the resistance value can be reduced.
[0148]
The first electrode layer 64 and the second electrode layer 66 can be formed using W, Ta, Cr, Cu, Rh, Ir, Ru, Au, or the like as materials. In particular, the first electrode layer 64 that is electrically connected to the multilayer film T1 is subjected to WW so that smear is less likely to occur in the step of adjusting the DC resistance value by polishing the surface of the magnetic detection element facing the recording medium. , Ta, Rh, Ir, Ru, and the like, and the second electrode layer 66 is preferably formed using a material having a small specific resistance, such as Cr, Cu, Au, Ta.
[0149]
An upper gap layer 44 is formed on the surface of the multilayer film T 1, the surface of the first electrode layer 64, and the surface of the second electrode layer 66, and an upper shield 45 is formed on the upper gap layer 44. The upper shield layer 45 is covered with a protective layer 46 made of an inorganic insulating material.
[0150]
The first hard bias layer 61 only needs to align one of the magnetization directions of the second free magnetic layer 37a and the first free magnetic layer 37c constituting the free magnetic layer 37. In FIG. 9, only the magnetization direction of the first free magnetic layer 37c is aligned. When the magnetization direction of the first free magnetic layer 37c is aligned in a certain direction, the second free magnetic layer 37a is in a ferrimagnetic state in which the magnetization direction is antiparallel, and the entire magnetization direction of the free magnetic layer 37 is aligned in a certain direction. .
[0151]
In the present embodiment, the first hard bias layer 61 applies a static magnetic field in the X direction shown mainly to the first free magnetic layer 37c. Therefore, it is possible to suppress the magnetization direction (opposite to the X direction shown in the figure) of the second free magnetic layer 37a from being disturbed by the static magnetic field in the X direction shown from the hard bias layer 61.
[0152]
In this embodiment, the first free magnetic layer 37c of the multilayer film T1 is formed below the antiferromagnetic layer 34 and is adjacent to the thick part of the first hard bias layer 61. Therefore, the magnetization of the first free magnetic layer 37c is easily aligned in the X direction. Thereby, generation of Barkhausen noise can be reduced.
[0153]
FIG. 10 is a sectional view of the magnetic detection element according to the tenth embodiment of the present invention as viewed from the side facing the recording medium.
[0154]
This magnetic detection element has a first free magnetic layer 105, a second free magnetic layer 107, nonmagnetic conductive layers 104 and 108, a first pinned magnetic layer 103, and a third pinned layer above and below the nonmagnetic material layer 106. This is a so-called dual spin-valve type thin film element in which the magnetic layer 109, the nonmagnetic material layers 102 and 110, the second pinned magnetic layer 101, the fourth pinned magnetic layer 111, and the antiferromagnetic layers 100 and 112 are formed. It is possible to obtain a higher reproduction output than the spin valve thin film element (referred to as a single spin valve thin film element) shown in FIGS. The lowermost layer is the underlayer 33, the uppermost layer is the protective layer 38, and the multilayer film T2 is composed of a laminate from the underlayer 33 to the protective layer 38. Yes.
[0155]
In the present invention, the antiferromagnetic layers 100 and 112 are formed of a Pt—Mn (platinum-manganese) alloy film. Alternatively, instead of the Pt—Mn alloy, X—Mn (where X is one or more of Pd, Ir, Rh, and Ru) or Pt—Mn—X ′ (wherein X ′ may be formed of any one of Pd, Ir, Rh, Ru, Au, and Ag, or two or more elements.
[0156]
The first free magnetic layer 105, the second free magnetic layer 107, the first pinned magnetic layer 103, the second pinned magnetic layer 101, the third pinned magnetic layer 109, and the fourth pinned magnetic layer 111 are made of Ni. -Fe (nickel-iron) alloy, Co (cobalt), Co-Fe (cobalt-iron) alloy, Co-Fe-Ni alloy, etc., and the nonmagnetic conductive layers 104 and 108 are made of Cu (copper). ) And the like.
[0157]
A buffer film formed of Cr or the like from the underlayer 33 to the side surfaces of the second pinned magnetic layer 101, the nonmagnetic material layer 102, the first pinned magnetic layer 103, the nonmagnetic conductive layer 104, and the first free magnetic layer 105. In addition, bias base layers 113 and 113 serving as alignment films are formed. By forming the bias base layers 113 and 113, a bias magnetic field generated from first hard bias layers 114 and 114 described later can be increased.
[0158]
A first hard bias layer 114 is formed on the bias base layer 113. In the first hard bias layer 114, the side surface 114 a on the multilayer film T 2 side is opposed to the bias base layer 113.
[0159]
A second hard bias layer 116 is stacked on the first hard bias layer 114. The side surface 116a on the multilayer film T side of the second hard bias layer 116 is provided at a position separated from the side surface T2s of the multilayer film T by a predetermined distance Sp2. The predetermined distance Sp2 is set as a distance at which the magnetic field generated from the second hard bias layer 116 does not directly act on the free magnetic layer F in the multilayer film T2. The second hard bias layer 116 is laminated directly on the first hard bias layer 114.
[0160]
The first hard bias layer 114 and the second hard bias layer 116 are formed of, for example, a Co—Pt (cobalt-platinum) alloy, a Co—Cr—Pt (cobalt-chromium-platinum) alloy, or the like in the X direction ( Magnetized in the track width direction).
[0161]
An intermediate layer 115 made of a nonmagnetic material such as Ta is formed on the first hard bias layer 114, and a first electrode layer 117 is formed on the intermediate layer 115.
[0162]
Further, a second electrode layer 119 is formed via an intermediate layer 118 at a position overlapping the second hard bias layer 116. Note that the second electrode layer 119 and the first electrode layer 117 are directly electrically connected.
[0163]
When intermediate layers 115 and 118 made of Ta or Cr are provided between the first electrode layer 117 and the first hard bias layer 114 and between the second electrode layer 119 and the second hard bias layer 116, thermal diffusion is performed. And the deterioration of the magnetic characteristics of the first hard bias layer 114 and the second hard bias layer 116 can be prevented.
[0164]
In the case where Ta is used as the first electrode layer 117 and the second electrode layer 119, by providing the Cr intermediate layers 115 and 118, the crystal structure of Ta stacked on the upper layer of Cr is changed to a low-resistance body-centered cubic structure. It becomes easy.
[0165]
Further, when Cr is used as the first electrode layer 117 and the second electrode layer 119, by providing the Ta intermediate layers 115 and 118, Cr grows epitaxially, and the resistance value can be reduced.
[0166]
Note that the first electrode layer 117 and the second electrode layer 119 can be formed using W, Ta, Cr, Cu, Rh, Ir, Ru, Au, or the like as a material. In particular, the first electrode layer 117 that is electrically connected to the multilayer film T2 is subjected to WW so that smear is less likely to occur in the step of adjusting the DC resistance value by polishing the surface of the magnetic detection element facing the recording medium. , Ta, Rh, Ir, and Ru are preferably used, and the second electrode layer 119 is preferably formed using a material having a low specific resistance such as Cr, Cu, Au, and Ta.
[0167]
An upper gap layer 44 is formed on the surface of the multilayer film T2, the surface of the first electrode layer 117, and the surface of the second electrode layer 119, and an upper shield 45 is formed on the upper gap layer 44. The upper shield layer 45 is covered with a protective layer 46 made of an inorganic insulating material.
[0168]
In FIG. 10, the first pinned magnetic layer 103 and the second pinned magnetic layer 101 having different magnetic moments are stacked via the nonmagnetic material layer 102 to function as one pinned magnetic layer P1. To do. In addition, a structure in which the third pinned magnetic layer 109 and the fourth pinned magnetic layer 111 having different magnetic moments are stacked via the nonmagnetic material layer 110 functions as one pinned magnetic layer P2.
[0169]
The magnetization directions of the first pinned magnetic layer 103 and the second pinned magnetic layer 101 are in an antiparallel ferrimagnetic state different by 180 degrees, and the first pinned magnetic layer 103, the second pinned magnetic layer 101, Since the other magnetization directions are fixed to each other, the magnetization direction of the fixed magnetic layer P1 can be stabilized in a fixed direction as a whole.
[0170]
In FIG. 10, the first pinned magnetic layer 103 and the second pinned magnetic layer 101 are formed using the same material, and the respective magnetic moments are varied by varying the film thicknesses.
[0171]
The magnetization directions of the third pinned magnetic layer 109 and the fourth pinned magnetic layer 111 are also antiparallel to each other by 180 degrees, and the third pinned magnetic layer 109 and the fourth pinned magnetic layer are in the antiparallel state. 111 and the other magnetization direction are mutually fixed.
[0172]
The nonmagnetic material layers 102 and 110 are made of one or more alloys of Ru, Rh, Ir, Cr, Re, and Cu.
[0173]
The second pinned magnetic layer 101 and the fourth pinned magnetic layer 111 are formed in contact with the antiferromagnetic layers 100 and 112, respectively, and are annealed in a magnetic field, whereby the second pinned magnetic layer 101 and the antiferromagnetic layer 101 are antiferromagnetic. An exchange anisotropic magnetic field is generated by exchange coupling at the interface with the magnetic layer 100 and at the interfaces with the fourth pinned magnetic layer 111 and the antiferromagnetic layer 112.
[0174]
The magnetization direction of the second pinned magnetic layer 101 is pinned in the Z direction shown in the figure. When the magnetization direction of the second pinned magnetic layer 101 is pinned in the Y direction in the figure, the magnetization direction of the first pinned magnetic layer 103 opposed via the nonmagnetic material layer 102 is changed to that of the second pinned magnetic layer 101. It is fixed in an antiparallel state with the magnetization direction. The direction of the combined magnetic moment obtained by adding the magnetic moment of the second pinned magnetic layer 101 and the magnetic moment of the first pinned magnetic layer 103 is the magnetization direction of the pinned magnetic layer P1.
[0175]
When the magnetization direction of the second pinned magnetic layer 101 is fixed in the Z direction shown in the drawing, the magnetization direction of the fourth pinned magnetic layer 111 is preferably fixed in a direction antiparallel to the Z direction shown in the drawing. At this time, the magnetization direction of the third pinned magnetic layer 109 facing through the nonmagnetic material layer 110 is pinned in an antiparallel direction to the magnetization direction of the fourth pinned magnetic layer 111, that is, in the Z direction. The direction of the combined magnetic moment obtained by adding the magnetic moment of the fourth pinned magnetic layer 111 and the magnetic moment of the third pinned magnetic layer 109 is the magnetization direction of the pinned magnetic layer P2.
[0176]
Then, the magnetization directions of the first pinned magnetic layer 103 and the third pinned magnetic layer 109 facing each other through the first free magnetic layer 105, the nonmagnetic material layer 106, and the second free magnetic layer 107 are: The antiparallel states are 180 degrees different from each other.
[0177]
In FIG. 10, as will be described later, the free magnetic layer F is formed by laminating the first free magnetic layer 105 and the second free magnetic layer 107 with the nonmagnetic material layer 106 interposed therebetween. The first free magnetic layer 105 and the second free magnetic layer 107 are in a ferrimagnetic state in which the magnetization directions are antiparallel.
[0178]
The first free magnetic layer 105 and the second free magnetic layer 107 change the magnetization direction while maintaining the ferrimagnetic state under the influence of an external magnetic field. At this time, if the magnetization directions of the first pinned magnetic layer 103 and the third pinned magnetic layer 109 are antiparallel to each other by 180 degrees, the rate of change in resistance and the free magnetic layer in the layer above the free magnetic layer F are free. The phase of the resistance change rate in the lower layer portion than the layer F becomes equal.
[0179]
Further, the magnetization direction of the pinned magnetic layer P1 and the magnetization direction of the pinned magnetic layer P2 are preferably antiparallel.
[0180]
For example, the magnitude of the magnetic moment of the second pinned magnetic layer 101 whose magnetization direction is pinned in the Z direction shown in the figure is made larger than the magnitude of the magnetic moment of the first pinned magnetic layer 103, and the magnetization of the pinned magnetic layer P1 The direction is the Z direction shown in the figure. On the other hand, the magnitude of the magnetic moment of the third pinned magnetic layer 109 whose magnetization direction is pinned in the Z direction in the drawing is made smaller than the magnitude of the magnetic moment of the fourth pinned magnetic layer 111, and the magnetization of the pinned magnetic layer P2 is made. The direction is antiparallel to the Z direction shown in the figure.
[0181]
Then, the direction of the sense current magnetic field generated when a sense current is passed in the direction opposite to the X direction in the figure matches the magnetization direction of the pinned magnetic layer P1 and the magnetization direction of the pinned magnetic layer P2, and the first pinned magnetic layer The ferrimagnetic state of the layer 103 and the second pinned magnetic layer 101 and the ferrimagnetic state of the third pinned magnetic layer 109 and the fourth pinned magnetic layer 111 are stabilized.
[0182]
The first free magnetic layer 105 and the second free magnetic layer 107 are formed so that their magnetic moments are different from each other. Also in this case, the first free magnetic layer 105 and the second free magnetic layer 107 are formed using the same material, and the thicknesses of the first free magnetic layer 105 and the second free magnetic layer 107 are different from each other. The magnetic moment of the free magnetic layer 107 is varied.
[0183]
Furthermore, the nonmagnetic material layers 102, 106, and 116 are formed of one or more alloys of Ru, Rh, Ir, Cr, Re, and Cu.
[0184]
In FIG. 10, the first free magnetic layer 105 and the second free magnetic layer 107 laminated with the nonmagnetic material layer 106 function as one free magnetic layer F.
[0185]
The magnetization directions of the first free magnetic layer 105 and the second free magnetic layer 107 are in a ferrimagnetic state in which they are antiparallel, and an effect equivalent to reducing the thickness of the free magnetic layer F is obtained. The effective magnetic moment per unit area of the free magnetic layer F as a whole is reduced, and the magnetization is likely to fluctuate, and the magnetic field detection sensitivity of the magnetoresistive effect element is improved.
[0186]
The direction of the combined magnetic moment obtained by adding the magnetic moment of the first free magnetic layer 105 and the magnetic moment of the second free magnetic layer 107 becomes the magnetization direction of the free magnetic layer F.
[0187]
The first hard bias layer 114 is magnetized in the X direction (track width direction) in the drawing, and the magnetization direction of the free magnetic layer F is in the X direction in the drawing by the bias magnetic field from the first hard bias layer 114 in the X direction. It has become.
[0188]
Then, the magnetization of the free magnetic layer F fluctuates with high sensitivity to an external magnetic field from the recording medium, and the electrical resistance changes due to the relationship between the fluctuation of the magnetization direction and the fixed magnetization directions of the fixed magnetic layers P1 and P2. The leakage magnetic field from the recording medium is detected by the voltage change based on the change in the electrical resistance value. However, it is the relative angle between the magnetization direction of the first pinned magnetic layer 103 and the magnetization direction of the first free magnetic layer 105 and the magnetization direction of the third pinned magnetic layer 109 that directly contribute to the change (output) of the electrical resistance value. The relative angles of the magnetization directions of the second free magnetic layer 107 are preferably orthogonal in the state where the detection current is applied and the signal magnetic field is not applied.
[0189]
The hard bias layer 114 only needs to align the magnetization direction of one of the first free magnetic layer 105 and the second free magnetic layer 107 constituting the free magnetic layer F. In FIG. 10, only the magnetization direction of the second free magnetic layer 107 is aligned. When the magnetization direction of the second free magnetic layer 107 is aligned in a certain direction, the first free magnetic layer 105 is in a ferrimagnetic state in which the magnetization direction is antiparallel, and the magnetization direction of the entire free magnetic layer F is aligned in a certain direction. .
[0190]
In the present embodiment, the first hard bias layer 114 mainly applies a static magnetic field in the X direction to the second free magnetic layer 107. Therefore, it is possible to suppress the magnetization direction (opposite to the X direction in the figure) of the first free magnetic layer 105 from being disturbed by the static magnetic field in the X direction shown in the figure generated from the hard bias layer 114.
[0191]
Also in the magnetic sensing elements shown in FIGS. 2 to 10, the magnetization directions of the free magnetic layers 37 and F are aligned by reducing the film thicknesses t 1, t 5, and t 7 of the first hard bias layers 40, 61, and 114. The strength of the magnetic field generated by the first hard bias layers 40, 61, and 114 can be reduced. That is, it is possible to reduce the value of the residual magnetization × film thickness of the first hard bias layers 40, 61, 114 in the portions close to the free magnetic layers 37, F.
[0192]
Therefore, the width dimension of the dead area formed in the multilayer films T, T1, and T2 can be reduced, the sensitivity area can be widened, and the sensitivity of the magnetic detection element can be improved.
[0193]
Further, the second hard bias layers 42, 63, 116 are in direct contact with the upper layers of the first hard bias 40, 61, 114 at positions separated from the side surfaces of the multilayer films T, T1, T2 by a predetermined distance Sp, Sp1, Sp2. Thus, the hard bias layer H is made thicker, and the coercive force Hc and the squareness ratio of the hard bias layer H can be increased. Therefore, even if a disturbance magnetic field exists, the free magnetic layers 37 and F can be kept in a stable single domain state.
[0194]
In the present embodiment, in order to increase the coercive force Hc and the squareness ratio of the hard bias layer H while reducing the width dimension of the insensitive region formed in the multilayer film T, The film thicknesses t2 and t6 of the second hard bias layers 42 and 63 are made thicker than the film thicknesses t1 and t5. However, as shown in FIG. 10, the thickness t8 of the second hard bias layer 116 may be made thinner than the thickness t7 of the first hard bias layer 114.
[0195]
2 to 10, the second hard bias layers 42, 63, and 116 are stacked on the upper layers of the first hard bias layers 40, 61, and 114, but the lower layers of the first hard bias layers 40, 61, and 114 are stacked. The second hard bias layers 42, 63, 116 may be stacked in direct contact with each other.
[0196]
4 to 10 also, only the first hard bias layers 40, 61, 114 out of the first hard bias layers 40, 61, 114 and the second hard bias layers 42, 63, 116 are used. The distance between the upper shield layer 45 and the lower shield layer 31 in the region S1 that does not overlap with the insulating layer 52 is Gls, and between the upper shield layer 45 and the lower shield layer 31 at the position overlapping the center C of the multilayer film T. When the distance is Glc, it is preferable to set the difference between Gls and Glc to be equal to or less than the value at which the effective track width E-Tw of the magnetic detection element is 0.17 μm.
[0197]
1 to 10, it is preferable to set the values of Gls and Glc in a range satisfying Glc−20 nm ≦ Gls ≦ Glc + 90 nm. More preferably, the values of Gls and Glc are set in a range satisfying Glc−20 nm ≦ Gls ≦ Glc + 70 nm. More preferably, the values of Gls and Glc are set in a range satisfying Glc−20 nm ≦ Gls ≦ Glc + 30 nm.
[0198]
Or it is preferable to set the value of the said Gls and the said Glc in the range which satisfy | fills 0.67 <= Gls / Glc <= 2.50. More preferably, the values of Gls and Glc are set in a range satisfying 0.67 ≦ Gls / Glc ≦ 2.17. More preferably, the values of Gls and Glc are set in a range satisfying 0.67 ≦ Gls / Glc ≦ 1.50.
[0199]
Note that the Gls and Glc values may be Gls> Glc, Gls = Glc, or Gls <Glc within the above-described range of the Gls and Glc values.
[0200]
If Gls> Glc, the distance between the upper shield layer 45 and the lower shield layer 31 in the vicinity of both sides of the multilayer films T, T1, and T2 is the upper shield layer 45 and the lower shield in the region overlapping the multilayer films T, T1, and T2. It is larger than the distance (gap length) between the layers 31.
[0201]
If Gls = Glc, the distance between the upper shield layer 45 and the lower shield layer 31 in the vicinity of both sides of the multilayer films T, T1, T2 is the upper shield layer 45 and the lower shield in the region overlapping the multilayer films T, T1, T2. It is equal to the distance (gap length) between the layers 31.
[0202]
If Gls <Glc, the distance between the upper shield layer 45 and the lower shield layer 31 in the vicinity of both sides of the multilayer films T, T1, and T2 is the upper shield layer 45 and the lower shield in the region overlapping the multilayer films T, T1, and T2. It is smaller than the distance (gap length) between the layers 31.
[0203]
11 is a plan view of the multilayer film T, the first electrode layer 43, and the second electrode layer 51 of the magnetic detection element shown in FIG. 3, as viewed from above in FIG.
[0204]
As shown in FIG. 11, since the depth length Z1 in the height direction of the first electrode layer 43 is longer than the depth length Z2 in the height direction of the multilayer film T, the DC resistance value of the magnetic detection element is reduced. it can.
[0205]
3 and 5 to 10, only the configuration having two electrode layers is shown, but the number of electrode layers may be three or more.
[0206]
Further, a plurality of hard bias layers may be further stacked on the second hard bias layers 42, 63, 116.
[0207]
The free magnetic layers 37, F and the pinned magnetic layers 35, P1, P2 may be formed as a single magnetic material layer or two magnetic material layers (CoFe / NiFe, etc.).
[0208]
A method of manufacturing the magnetic detection element shown in FIG. 3 will be described.
First, as shown in FIG. 12, a lower shield layer 31 and a lower gap layer 32 are formed. The lower shield layer 31 is formed using a magnetic material such as NiFe, and the lower gap layer 32 is made of Al.₂O_Three, SiO₂It is formed using an insulating material such as. The lower shield layer 31 is laminated on the substrate 30 via a base layer (not shown) made of an insulating material such as alumina.
[0209]
Further, on the lower gap layer 32, a synthetic ferri-pinned type comprising the underlayer 33, the antiferromagnetic layer 34, the first pinned magnetic layer 35a, the nonmagnetic intermediate layer 35b, and the second pinned magnetic layer 35c shown in FIG. A synthetic ferrifree free magnetic layer 37 and a protective layer 38, each of which includes a fixed magnetic layer 35, a nonmagnetic material layer 36, a second free magnetic layer 37a, a nonmagnetic intermediate layer 37b, and a first free magnetic layer 37c, are laminated. A film T is formed.
[0210]
Instead of the multilayer film T, a multilayer film T1 of a single spin valve thin film element shown in FIG. 9 or a multilayer film T2 of a dual spin valve thin film element shown in FIG. 10 may be used.
[0211]
The antiferromagnetic layer constituting the multilayer film T, T1, or T2 is preferably formed of a PtMn alloy, or X—Mn (where X is one of Pd, Ir, Rh, Ru, or 2 Or Pt—Mn—X ′ (where X ′ is any one or more of Pd, Ir, Rh, Ru, Au, and Ag). Good. When the antiferromagnetic layer is formed of the above-described material, heat treatment must be performed to generate an exchange coupling magnetic field at the interface with the pinned magnetic layer.
[0212]
Next, a lift-off resist layer R1 covering the region of the optical track width O-Tw of the magnetic detection element to be formed is patterned on the multilayer film T.
[0213]
As shown in FIG. 12, the resist layer R1 has cut portions R1a and R1a formed on the lower surface thereof.
[0214]
Next, in the process shown in FIG. 13, both sides of the multilayer film T are etched away by etching.
In this step, the antiferromagnetic layer 34 is formed long in the X direction in the figure by controlling the etching rate and etching time so that the side surfaces of the antiferromagnetic layer 34 remain without being scraped. If the side surface of the antiferromagnetic layer 34 is completely cut, the magnetic detection element shown in FIG. 5 can be formed.
[0215]
Further, in the step shown in FIG. 14, the bias underlayers 39 and 39, the first hard bias layer 40 and the intermediate layer 41 are formed on both sides of the multilayer film T. The bias underlayer 39 is made of Cr, Ti, Mo, or W₅₀Mo₅₀1 or more, preferably Cr, the first hard bias layer 40 is a Co—Pt (cobalt-platinum) alloy, a Co—Cr—Pt (cobalt-chromium-platinum) alloy, and the intermediate layer 41 is Ta. Formed using. In the present embodiment, the bias underlayer 39, the first hard bias layer 40, and the intermediate layer 41 are formed by using an anisotropic sputtering method.
[0216]
In the present embodiment, the first hard bias layer 40 is formed at a height position where the uppermost portion 40b of the side surface 40a facing the multilayer film T overlaps the upper surface 37a3 of the second free magnetic layer 37a. That is, the side surface 40a on the side facing the multilayer film T of the first hard bias layer 40 is formed up to a height position facing the side surface of the second free magnetic layer 37a and the side surface of the first free magnetic layer 37c. Are formed so as not to face each other. However, as shown in FIG. 6, the side surface 40 a of the first hard bias layer 40 includes the side surface of the pinned magnetic layer 35, the side surface of the nonmagnetic material layer 36, the second free magnetic layer 37 a, the nonmagnetic intermediate layer 37 b, and You may make it oppose the side surface of the 1st free magnetic layer 37c.
[0217]
The first hard bias layer 40 has only the magnetization direction of the second free magnetic layer 37a out of the second free magnetic layer 37a and the first free magnetic layer 37c constituting the free magnetic layer 37. When the magnetization direction of the second free magnetic layer 37a is aligned in a certain direction, the first free magnetic layer 37c is in a ferrimagnetic state in which the magnetization direction is antiparallel, and the entire magnetization direction of the free magnetic layer 37 is aligned in a certain direction. .
[0218]
In the present embodiment, the first hard bias layer 40 mainly applies a static magnetic field in the illustrated X direction to the second free magnetic layer 37a. Therefore, it is possible to suppress the magnetization direction (opposite to the X direction shown in the drawing) of the first free magnetic layer 37c from being disturbed by the static magnetic field in the X direction shown from the first hard bias layer 40.
[0219]
Next, in the process shown in FIG. 15, the first electrode layer 43 is formed on the intermediate layers 41 and 41 from a predetermined angle θ3 with respect to the normal direction of the surface of the substrate 30. The first electrode layer 43 is composed of a pair of electrodes formed on both sides of the multilayer film T with a predetermined interval Sp3 in the track width direction.
[0220]
At this time, the first electrode layer 43 may be formed even in the notches R1a and R1a formed on the lower surface of the resist layer R1 provided on the multilayer film T.
[0221]
When forming the first electrode layer 43, as shown in FIG. 11, the depth length Z1 of the first electrode layer 43 in the height direction is formed longer than the depth length Z2 of the multilayer film T in the height direction. It is preferable.
[0222]
Then, after removing the resist layer R1 by lift-off using a resist stripping solution, as shown in FIG. 16, the lift-off resist layer R2 in which the cut portions R2a and R2a are formed is formed in the multilayer film T and the first electrode layer 43. Form on top.
[0223]
Next, the first electrode layer 43, the intermediate layer 41, and the first hard bias layer 40 are etched away by etching. In this step, the etching rate and etching time are controlled so that the first hard bias layer 40 remains without being cut away.
[0224]
Next, the second hard bias layer 42, the intermediate layer 50, and the second electrode layer 51 are successively formed on the first hard bias layer 40 from a predetermined angle θ4 with respect to the normal direction of the surface of the substrate 30.
[0225]
In this manner, the second hard bias layer 42 in which the side surface 40a on the multilayer film T side is separated from the side surface Ts of the multilayer film T by the predetermined distance Sp is laminated on the first hard bias layer 40. A magnetic detection element can be formed. The predetermined distance Sp is set as a distance at which the magnetic field generated from the second hard bias layer 42 does not directly act on the free magnetic layer 37 in the multilayer film T. The second hard bias layer 42 is stacked on and in direct contact with the first hard bias layer 40.
[0226]
The first hard bias layer 40 and the second hard bias layer 42 are formed of, for example, a Co—Pt (cobalt-platinum) alloy or a Co—Cr—Pt (cobalt-chromium-platinum) alloy. Further, the first hard bias layer 40 and the second hard bias layer 42 are magnetized in the X direction (track width direction) in the figure after being formed.
[0227]
Note that it is preferable that the film thickness t2 of the second hard bias layer 42 is larger than the film thickness t1 of the first hard bias layer 40.
[0228]
When forming the second hard bias layer 42, the intermediate layer 50, and the second electrode layer 51, for example, the second hard bias layer 42, the intermediate layer 50, and the second electrode are formed on the substrate 30 on which the multilayer film T is formed. A target formed with the composition of the layer 51 is tilted, and the target is moved or rotated on the substrate 30, and any one of ion beam sputtering, long throw sputtering, collimation sputtering, or a combination thereof is used. A film is formed by sputtering.
[0229]
Alternatively, the target may be fixed and the substrate 30 side may be moved or rotated in an oblique direction with respect to the target.
[0230]
The film formation angle θ4 when forming the second hard bias layer 42, the intermediate layer 50, and the second electrode layer 51 is set to be larger than the film formation angle θ3 when forming the first electrode layer 43. Is preferred. By setting the film formation angle θ4> the film formation angle θ3, the angle θ2 formed by the plane parallel to the surface of the multilayer film T and the tangential plane of the front edge of the second electrode layer 51 is defined as the plane parallel to the surface of the multilayer film T. The angle θ <b> 1 formed by the tangent plane of the front edge of the first electrode layer 43 can be made smaller.
[0231]
If θ1> θ2, the supply of current from the first electrode layer 43 directly connected to the multilayer film T to the multilayer film T can be stabilized.
[0232]
Further, in order to suppress an increase in the distance between the upper shield layer 45 and the lower shield layer 31 in the vicinity of both sides of the multilayer film T and to reduce the DC resistance value of the magnetic detection element, the film thickness of the second electrode layer 51 is reduced. It is preferable to make t4 thicker than the film thickness t3 of the first electrode layer 43.
[0233]
Further, the first electrode layer 43 electrically connected to the multilayer film T is subjected to W so that smear does not easily occur in the step of adjusting the DC resistance value by polishing the surface of the magnetic detection element facing the recording medium. , Ta, Rh, Ir, and Ru are preferably used, and the second electrode layer 51 is preferably formed using a material having a low specific resistance such as Cr, Cu, Au, and Ta.
[0234]
Then, after removing the resist layer R2 by lift-off using a resist stripping solution, an upper gap layer 44 is formed on the multilayer film T, the first electrode layer 43, and the second electrode layer 51 as shown in FIG. To do.
[0235]
Further, in the step shown in FIG. 19, a lift-off resist layer R <b> 3 having a cut portion is stacked in a region overlapping with a part on the multilayer film T and the first electrode layer 43, and obliquely with respect to the substrate 30. An insulating layer 52 is formed so as to overlap a part on the first electrode layer 43 and the entire region on the second electrode layer 51.
[0236]
After removing the resist layer R3 by lift-off using a resist stripping solution, an upper shield layer 45 is formed on the upper gap layer 44 and the insulating layer 52 as shown in FIG. The magnetic detecting element shown in FIG. 3 is completed through the step of forming the layer 46.
[0237]
In the above-described method for manufacturing a magnetic detection element, regions S1 and S1 of the first electrode layer 43 and the second electrode layer 51 that overlap only with the first electrode layer 43 and do not overlap with the insulating layer 52. When the distance between the upper shield layer 45 and the lower shield layer 31 at Gls is Gls, and the distance between the upper shield layer 45 and the lower shield layer 31 at the position overlapping the center C of the multilayer film T is Glc, the Gls and Glc It is preferable to set the film thickness of each layer constituting the magnetic detection element so that the value of the difference is equal to or less than the value at which the effective track width of the magnetic detection element is 0.17 μm.
[0238]
Specifically, the values of Gls and Glc are preferably set in a range satisfying Glc−20 nm ≦ Gls ≦ Glc + 90 nm. More preferably, the values of Gls and Glc are set in a range satisfying Glc−20 nm ≦ Gls ≦ Glc + 70 nm. More preferably, the values of Gls and Glc are set in a range satisfying Glc−20 nm ≦ Gls ≦ Glc + 30 nm.
[0239]
Or it is preferable to set the value of the said Gls and the said Glc in the range which satisfy | fills 0.67 <= Gls / Glc <= 2.50. More preferably, the values of Gls and Glc are set in a range satisfying 0.67 ≦ Gls / Glc ≦ 2.17. More preferably, the values of Gls and Glc are set in a range satisfying 0.67 ≦ Gls / Glc ≦ 1.50.
[0240]
By setting the difference between Gls and Glc to a predetermined value or less, the distance between the upper shield layer 45 and the lower shield layer 31 in the vicinity of both sides of the multilayer film T is suppressed, and the effective track width E−Tw is suppressed. Can be reduced.
[0241]
Also in the present embodiment, the thin first electrode layer is a single layer in the vicinity of the multilayer film T, and the second electrode layer is laminated on the first electrode layer so that the film thickness is away from the multilayer film T. By making it bigger.
[0242]
As a result, the DC resistance value of the magnetic detection element can be reduced while the distance between the upper shield layer 45 and the lower shield layer 31 in the vicinity of both sides of the multilayer film T is reduced.
[0243]
Further, since the first electrode layer 43 can be formed thin in the vicinity of the multilayer film T, the step D formed by the surface of the multilayer film T and the side surface 42a of the first electrode layer 43 can be lowered. Therefore, even if the thickness of the upper gap layer 44 is reduced, the upper gap layer 44 can be reliably formed on the step D. That is, an electrical short circuit between the upper shield layer 45 and the second electrode layer 51 can be prevented more reliably.
[0244]
The manufacturing method of the magnetic detection element shown in FIG. 3 has been described above.
Note that the formation of the insulating layer 52 may be omitted in the manufacturing process. Further, within the above-described range of the values of Gls and Glc, the values of Gls and Glc may be Gls> Glc, Gls = Glc, or Gls <Glc.
[0245]
Further, in the step of FIG. 17, the magnetic detection element shown in FIG. 1 or FIG. 2 can be formed by omitting the formation of the intermediate layer 50 and the second electrode layer 51.
[0246]
In addition, in the step of FIG. 15, the formation of the intermediate layer 41 and the first electrode layer 43 is omitted, whereby the magnetic detection element of FIG. 4 can be formed.
[0247]
When forming the magnetic sensing element of FIG. 7, the width dimension of the dead region d of the multilayer film T is measured in advance using another magnetic head using a microtrack profile method or the like, and only on the dead region d. When the lift-off resist layer is formed so as to cover the first electrode layer 43 and the first electrode layer 43 is formed, the first electrode layer 43 may be formed even in the cut portion of the resist layer.
[0248]
When forming the magnetic detection element shown in FIG. 8, the bias underlayers 39 and 39 may be formed from the normal direction to the surface of the substrate 30 as shown in FIG. For example, the bias base layers 39 and 39 are sputter-deposited so as to face each other so as to be parallel to the substrate 30, and the angle distribution of the sputtered particles Sa is narrow and good in straightness (ion beam sputtering, long throw sputtering). Or a collimation sputtering method, or a sputtering method combining them). As a result, almost no sputtered particles are deposited on the side surfaces of the multilayer film T, and the film can be formed only on the extended portion 34b of the antiferromagnetic layer 34 in the multilayer film T.
[0249]
Further, by forming the first hard bias layer 40 by using an isotropic or anisotropic sputtering method, as shown in FIG. 8, the side surface 40a on the first hard bias layer 40 multilayer T side is changed. The second free magnetic layer 37a can be in direct contact with the side surface. Then, the first hard bias layer 40 and the second free magnetic layer 37a become a magnetic continuum, and it is possible to prevent a demagnetizing field from being generated at the side end portion of the second free magnetic layer 37a, thereby increasing stability. .
[0250]
By setting the position of the end portion R1b of the resist layer R1, the angular distribution of the sputtered particles Sa, and straightness, the bias underlayer 39 is not formed on the side surface of the multilayer film T, and the second free magnetic The bias underlayer 39 is formed on the side surface of the multilayer film T as long as it is not formed on the side surface of the layer 37a, and the bias underlayer 39 between the first hard bias layer 40 and the second free magnetic layer 37a is formed. The bias underlayer 39 can be formed on the side surface of the multilayer film T so that the film thickness becomes 1 nm or less.
[0251]
Further, in order to form three or more electrode layers, a lift-off resist layer in which cut portions are formed is formed on the uppermost electrode layer among the plurality of electrode layers already formed from the multilayer film T. Then, another electrode layer may be formed on the uppermost electrode layer at a predetermined film formation angle with respect to the normal direction of the substrate, and then the resist layer may be removed.
[0252]
In the steps shown in FIGS. 12 to 15, the resist layer masking the multilayer film T is a lift-off resist layer R1 having notches R1a and R1a formed by a two-layer resist method, an image reverse method, or the like. .
[0253]
However, in the present invention, as shown in FIG. 22, a region covering the region of the optical track width O-Tw of the magnetic detection element to be formed may be masked using the resist layer R4 having no notch. Good. When the optical track width O-Tw is formed with a width dimension of 0.2 μm or less, it is effective to form the resist layer R4 having no notch using electron beam lithography or the like.
[0254]
After the formation of the resist layer R4, both sides of the multilayer film T are etched by etching as shown in FIG.
[0255]
Further, in the step shown in FIG. 24, bias underlayers 39 and 39, first hard bias layers 40 and 40, intermediate layers 41 and 41, and first electrode layers 43 and 43 are formed on both sides of the multilayer film T.
[0256]
In the present invention, the first electrode layer 43 can be formed thin in the vicinity of the multilayer film T, and the height dimension of the step D formed by the surface of the multilayer film T and the side surface of the first electrode layer 43 can be reduced. Therefore, even if the resist layer R4 does not have a notch, the resist layer R4 can be reliably removed after the first electrode layer 43 is formed.
[0257]
Note that a recording / reproducing composite magnetic head may be configured by stacking a recording inductive head on the magnetic detection element of the present invention.
[0258]
The configuration of the hard bias layer of the present invention can also be used to make a free magnetic layer of a CPPGMR type magnetic detecting element and a TMR (tunnel effect magnetoresistive) type magnetic detecting element into a single magnetic domain.
[0259]
【Example】
A floating magnetic head is formed using the magnetic sensing element having the structure shown in FIG. 3, and the distance Glc between the upper shield layer 45 and the lower shield layer 31 at a position overlapping the center C of the multilayer film T of the magnetic sensing element is set. The effective track width when the distance Gls between the upper shield layer 45 and the lower shield layer 31 in the regions S1 and S1 that are fixed and overlap only with the first electrode layer 43 but not the insulating layer 52 is changed ( effective read width) E-Tw was measured.
[0260]
The effective track width E-Tw was measured using the full track profile method described above (see FIG. 26).
[0261]
Glc of the magnetic detection element used for the measurement is 60 nm, the optical track width O-Tw is 0.15 μm, the depth Z2 in the height direction of the multilayer film T is 0.1 μm, and the magnetic flying height from the recording medium is 18 nm. It was. Further, two cases were investigated when the value of the residual magnetization × film thickness of the first hard bias layer 40 was 7.5 T · nm and 21.7 T · nm.
[0262]
FIG. 25 is a graph showing the relationship between the difference between Gls and Glc and the effective track width E-Tw.
[0263]
From the graph of FIG. 25, it can be seen that the effective track width E-Tw decreases as the value of Gls decreases.
[0264]
When the value of the residual magnetization × film thickness of the first hard bias layer 40 is 7.5 T · nm, in order to make the effective track width E-Tw 0.17 μm or less, the value of the difference between Gls and Glc is set to It can be seen that the thickness should be 90 nm or less. Further, if the difference between Gls and Glc is 70 nm or less, the effective track width E-Tw can be 0.167 μm or less, and if the difference between Gls and Glc is 30 nm or less, the effective track width E -Tw can be 0.165 micrometer or less.
[0265]
In addition, when the value of the residual magnetization × film thickness of the first hard bias layer 40 is 21.7 T · nm, the effective track width E−Tw is set to 0. 0 when the difference between Gls and Glc is 70 nm or less. If the difference between Gls and Glc is 30 nm or less, the effective track width E-Tw can be 0.157 μm or less.
[0266]
In order to form the first hard bias layer 40 having a sufficient thickness, it is preferable that Gls−Glc ≧ −20 nm.
[0267]
From these results, in the present invention, the values of Gls and Glc are preferably set in a range satisfying Glc-20 nm ≦ Gls ≦ Glc + 90 nm, and more preferably in a range satisfying Glc−20 nm ≦ Gls ≦ Glc + 70 nm. More preferably, it is set to a range satisfying Glc-20 nm ≦ Gls ≦ Glc + 30 nm.
[0268]
Further, the value of Gls and Glc is set to a range satisfying 0.67 ≦ Gls / Glc ≦ 2.50 from the fact that Glc is 60 nm and the range of preferable values of Gls and Glc. More preferably, it is set in a range satisfying 0.67 ≦ Gls / Glc ≦ 2.17, and more preferably in a range satisfying 0.67 ≦ Gls / Glc ≦ 1.50. It was decided.
[0269]
【The invention's effect】
In the present invention described in detail above, by reducing the film thickness of the first hard bias layer, the strength of the static magnetic field of the first hard bias layer that aligns the magnetization direction of the free magnetic layer can be reduced. . That is, the value of the residual magnetization × film thickness in the portion of the hard bias layer close to the free magnetic layer can be reduced.
[0270]
Therefore, the width of the dead area formed in the multilayer film can be reduced, the sensitivity area can be widened, and the sensitivity of the magnetic detection element can be improved.
[0271]
Further, at a position away from the side surface of the multilayer film by a predetermined distance, the second hard bias layer is laminated in direct contact with the upper layer or the lower layer of the first hard bias, thereby increasing the film thickness of the hard bias layer. The coercive force Hc and the squareness ratio of the hard bias layer can be increased. Therefore, even if a disturbance magnetic field exists, the free magnetic layer can be kept in a stable single domain state.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a magnetic detection element according to a first embodiment of the present invention as viewed from the side facing a recording medium;
FIG. 2 is a cross-sectional view of a magnetic detection element according to a second embodiment of the present invention as viewed from the side facing a recording medium;
FIG. 3 is a cross-sectional view of a magnetic detection element according to a third embodiment of the present invention as viewed from the side facing a recording medium;
FIG. 4 is a cross-sectional view of a magnetic detection element according to a fourth embodiment of the present invention as viewed from the side facing a recording medium;
FIG. 5 is a cross-sectional view of a magnetic detection element according to a fifth embodiment of the present invention as viewed from the side facing a recording medium;
FIG. 6 is a cross-sectional view of a magnetic detection element according to a sixth embodiment of the present invention viewed from the side facing the recording medium;
FIG. 7 is a cross-sectional view of a magnetic detection element according to a seventh embodiment of the present invention viewed from the side facing a recording medium;
FIG. 8 is a cross-sectional view of a magnetic detection element according to an eighth embodiment of the present invention viewed from the side facing a recording medium;
FIG. 9 is a cross-sectional view of a magnetic sensing element according to a ninth embodiment of the present invention as viewed from the side facing the recording medium;
FIG. 10 is a cross-sectional view of a magnetic detection element according to a tenth embodiment of the present invention as viewed from the side facing a recording medium;
11 is a plan view of the multilayer film T, the first electrode layer 43, and the second electrode layer 51 of the magnetic detection element shown in FIG. 3, as viewed from above in FIG.
FIG. 12 is a process diagram showing an embodiment of a method for producing a magnetic sensing element of the present invention;
FIG. 13 is a process diagram showing an embodiment of a method for producing a magnetic sensing element of the present invention;
FIG. 14 is a process diagram showing an embodiment of a method for producing a magnetic sensing element of the present invention;
FIG. 15 is a process diagram showing an embodiment of a method for producing a magnetic sensing element of the present invention;
FIG. 16 is a process diagram showing an embodiment of a method for producing a magnetic sensing element of the present invention;
FIG. 17 is a process diagram showing an embodiment of a method for producing a magnetic sensing element of the present invention;
FIG. 18 is a process diagram showing an embodiment of a method for producing a magnetic sensing element of the present invention;
FIG. 19 is a process diagram showing an embodiment of a method for producing a magnetic sensing element of the present invention;
FIG. 20 is a process diagram showing an embodiment of a method for producing a magnetic sensing element of the present invention;
FIG. 21 is a process diagram showing an embodiment of a method for producing a magnetic sensing element of the present invention;
FIG. 22 is a process diagram showing an embodiment of a method for producing a magnetic sensing element of the present invention;
FIG. 23 is a process diagram showing an embodiment of a method for producing a magnetic sensing element of the present invention;
FIG. 24 is a process diagram showing an embodiment of a method for producing a magnetic sensing element of the present invention;
FIG. 25 is a graph showing the relationship between the value of the difference between Gls and Glc and the effective track width;
FIG. 26 is a graph for explaining the full track profile method;
FIG. 27 is a cross-sectional view of a conventional magnetic detection element as viewed from the side facing the recording medium;
[Explanation of symbols]
31 Lower shield layer
32 Lower gap layer
33 Underlayer
34 Antiferromagnetic layer
35 Fixed magnetic layer
35a First pinned magnetic layer
35b Nonmagnetic intermediate layer
35c Second pinned magnetic layer
36 Non-magnetic material layer
37 Free magnetic layer
37a Second free magnetic layer
37b Nonmagnetic intermediate layer
37c First free magnetic layer
38 Protective layer
39 Bias Underlayer
40 First hard bias layer
41 middle class
42 Second hard bias layer
43 First electrode layer
44 Upper gap layer
45 Upper shield layer
46 Protective layer
51 Second electrode layer
T, T1, T2 multilayer film

Claims (22)

The antiferromagnetic layer has the fixed magnetic layer whose magnetization direction by an exchange coupling magnetic field of the antiferromagnetic layer is fixed, a nonmagnetic material layer, and a multilayer film having a free magnetic layer varying magnetization in response to an external magnetic field ,
On both sides of the multilayer film, a first hard bias layer is formed of a hard magnetic material and aligns the magnetization direction of the free magnetic layer in a direction crossing the fixed magnetization direction of the fixed magnetic layer, and a first hard bias layer A second hard bias layer formed of a hard magnetic layer is provided on the bias layer,
The second hard bias layer is located farther from the side surface of the multilayer film than the first hard bias layer, and between the side surface of the multilayer film and the second hard bias layer and the first hard bias layer. a position overlapping the first hard bias layer, the magnetic sensor nonmagnetic layer is characterized that you have interposed.   The magnetic sensing element according to claim 1, wherein the film thickness of the second hard bias layer is larger than the film thickness of the first hard bias layer. 3. The magnetism according to claim 1 , wherein a side surface on the multilayer film side of the first hard bias layer is opposed to a side surface of the free magnetic layer via a bias underlayer made of a nonmagnetic material and having a thickness of 1 nm or less. Detection element.   4. The magnetic sensing element according to claim 1, wherein an insulating layer is formed to overlap a part on the first hard bias layer and all regions on the second hard bias layer. 5. The multilayer film and the hard bias layer are formed on a lower gap layer made of an insulating material laminated on a lower shield layer made of a magnetic material formed on a substrate, and the multilayer film and the hard bias layer are formed on the multilayer film and the hard bias layer. An upper gap layer made of an insulating material and an upper shield layer made of a magnetic material laminated on the upper gap layer are formed.
Of the first hard bias layer and the second hard bias layer, a distance between the upper shield layer and the lower shield layer in a region overlapping only the first hard bias layer is Gls, and a position overlapping the center of the multilayer film. When the distance between the upper shield layer and the lower shield layer is Glc,
The magnetic detection element according to any one of claims 1 to 3, wherein a value of a difference between the Gls and Glc is set to be equal to or less than a value at which an effective track width of the magnetic detection element is 0.17 µm. A distance between the upper shield layer and the lower shield layer in a region of the first hard bias layer and the second hard bias layer that overlaps only the first hard bias layer and does not overlap the insulating layer. Gls, when the distance between the upper shield layer and the lower shield layer at the position overlapping the center of the multilayer film is Glc,
The magnetic detection element according to claim 4, wherein a value of a difference between Gls and Glc is set to be equal to or less than a value at which an effective track width of the magnetic detection element is 0.17 μm.   The magnetic detection element according to claim 5, wherein the values of Gls and Glc are set in a range satisfying Glc−20 nm ≦ Gls ≦ Glc + 90 nm.   The magnetic detection element according to claim 5, wherein the values of Gls and Glc are set in a range satisfying 0.67 ≦ Gls / Glc ≦ 2.50. The value of the said Gls Glc, magnetic sensing element according to any one of claims 5 to 8, Gls> Glc.   The magnetic detection element according to claim 5, wherein the values of Gls and Glc are Gls = Glc.   The magnetic detection element according to claim 5, wherein the values of Gls and Glc satisfy Gls <Glc. The non-magnetic layer is a first electrode layer, the first electrode layer, the magnetic sensing element according to any one of the multilayer film and electrically directly the attached 請 Motomeko 1 to 11.   The magnetic detection element according to claim 1, wherein a depth length of the first electrode layer in a height direction is longer than a depth length of the multilayer film in a height direction.   14. The magnetic sensing element according to claim 12, further comprising a second electrode layer that is formed at a position overlapping the second hard bias layer and is directly electrically connected to the first electrode layer.   The angle formed by the plane parallel to the multilayer film surface and the tangent plane of the front edge of the second electrode layer is the angle formed by the plane parallel to the multilayer film surface and the tangent plane of the front edge of the first electrode layer The magnetic sensing element according to claim 14, which is smaller.   The magnetic detection element according to claim 14, wherein the second electrode layer is thicker than the first electrode layer.   The material for the first electrode layer is one or more of W, Ta, Rh, Ir, and Ru, and the material for the second electrode layer is one or two of Cr, Cu, Au, and Ta. The magnetic detection element according to any one of claims 14 to 16, which is as described above. The magnetic sensing element according to claim 1, wherein the nonmagnetic layer is an upper gap layer formed from the multilayer film to the first hard bias layer and the second hard bias layer. (A) forming a lower shield layer, a lower gap layer, and a multilayer film exhibiting a magnetoresistive effect on the substrate;
(B) forming a first resist layer on the multilayer film;
(C) cutting the region of the multilayer film that is not covered by the first resist layer;
(D) forming a first hard bias layer on both sides of the multilayer film , and further forming a first electrode layer on the first hard bias layer;
(E) removing the first resist layer;
(F) forming a lift-off second resist layer in which a cut portion is formed on a region overlapping the multilayer film and the first electrode layer;
(G) cutting the first electrode layer not masked by the second resist layer, and cutting the first hard bias layer to a predetermined thickness;
(H) laminating a second hard bias layer on the first hard bias layer having a predetermined thickness; and
(I) removing the second resist layer;
A method for manufacturing a magnetic sensing element, comprising:   (J) forming a lower shield layer, a lower gap layer, and a multilayer film exhibiting a magnetoresistive effect on the substrate;
  (K) forming a first resist layer on the multilayer film;
  (L) a step of cutting a region of the multilayer film that is not covered by the first resist layer;
  (M) forming a first hard bias layer on both side regions of the multilayer film;
  (N) removing the first resist layer;
  (O) forming a lift-off second resist layer in which a cut portion is formed on a region overlapping the multilayer film and the first hard bias layer;
  (P) scraping the first hard bias layer not masked by the second resist layer to a predetermined thickness;
  (Q) laminating a second hard bias layer on the first hard bias layer cut to a predetermined thickness;
(R) removing the second resist layer;
  (S) forming an upper gap layer over the multilayer film, over the first hard bias layer and the second hard bias layer;
A method for manufacturing a magnetic sensing element, comprising: The magnetic detection according to claim 19 or 20 , wherein in the step (h) or the step (q) , the second hard bias layer is formed thicker than the first hard bias layer. Device manufacturing method. Wherein before forming the first hard bias layer in step (d) or the (m) step, the bias underlayer made of non-magnetic material to 19 claims comprising the step of forming the normal direction of the substrate 21. A method for manufacturing a magnetic detection element according to any one of items 21 to 21 .

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