JPS6155791B2 - - Google Patents
Info
- Publication number
- JPS6155791B2 JPS6155791B2 JP52093762A JP9376277A JPS6155791B2 JP S6155791 B2 JPS6155791 B2 JP S6155791B2 JP 52093762 A JP52093762 A JP 52093762A JP 9376277 A JP9376277 A JP 9376277A JP S6155791 B2 JPS6155791 B2 JP S6155791B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- temperature
- manufacturing
- guard ring
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- 238000004519 manufacturing process Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 28
- 229910052796 boron Inorganic materials 0.000 claims description 26
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 18
- 239000011521 glass Substances 0.000 claims description 17
- 238000009792 diffusion process Methods 0.000 claims description 16
- 239000012298 atmosphere Substances 0.000 claims description 14
- -1 boron ions Chemical class 0.000 claims description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
- 239000011574 phosphorus Substances 0.000 claims description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 13
- 230000005684 electric field Effects 0.000 claims description 13
- 230000005855 radiation Effects 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 230000007547 defect Effects 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims 3
- 239000006117 anti-reflective coating Substances 0.000 claims 1
- 108091006146 Channels Proteins 0.000 description 16
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 9
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910018885 Pt—Au Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910003086 Ti–Pt Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H01L31/107—
-
- H01L31/105—
Landscapes
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71239276A | 1976-08-06 | 1976-08-06 | |
| US05/793,493 US4127932A (en) | 1976-08-06 | 1977-05-04 | Method of fabricating silicon photodiodes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5341193A JPS5341193A (en) | 1978-04-14 |
| JPS6155791B2 true JPS6155791B2 (US06582424-20030624-M00016.png) | 1986-11-29 |
Family
ID=27108828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9376277A Granted JPS5341193A (en) | 1976-08-06 | 1977-08-06 | Method of producing front illuminating silicon photodiode |
Country Status (5)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3001899A1 (de) * | 1980-01-19 | 1981-07-23 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Planar-fototransistor |
| JPS5789271A (en) * | 1980-11-25 | 1982-06-03 | Moririka:Kk | Compound semiconductor element |
| JPS57104275A (en) * | 1980-12-19 | 1982-06-29 | Nec Corp | Light receiving element |
| US4616247A (en) * | 1983-11-10 | 1986-10-07 | At&T Bell Laboratories | P-I-N and avalanche photodiodes |
| CA1301895C (en) * | 1989-01-12 | 1992-05-26 | Robert J. Mcintyre | Silicon avalanche photodiode with low multiplication noise |
| JP2002151729A (ja) | 2000-11-13 | 2002-05-24 | Sony Corp | 半導体装置及びその製造方法 |
| CN114975672B (zh) * | 2021-02-26 | 2024-10-22 | 中国科学院半导体研究所 | 背入射近红外增强硅雪崩光电探测器的结构及制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3244567A (en) * | 1962-09-10 | 1966-04-05 | Trw Semiconductors Inc | Impurity diffusion method |
| JPS49116957A (US06582424-20030624-M00016.png) * | 1972-10-25 | 1974-11-08 | ||
| JPS5031777A (US06582424-20030624-M00016.png) * | 1973-07-21 | 1975-03-28 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3534231A (en) * | 1968-02-15 | 1970-10-13 | Texas Instruments Inc | Low bulk leakage current avalanche photodiode |
| US3886579A (en) * | 1972-07-28 | 1975-05-27 | Hitachi Ltd | Avalanche photodiode |
-
1977
- 1977-06-28 CA CA281,617A patent/CA1078948A/en not_active Expired
- 1977-08-02 DE DE19772734726 patent/DE2734726C2/de not_active Expired
- 1977-08-05 FR FR7724317A patent/FR2360998A1/fr active Granted
- 1977-08-05 GB GB3288177A patent/GB1561953A/en not_active Expired
- 1977-08-06 JP JP9376277A patent/JPS5341193A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3244567A (en) * | 1962-09-10 | 1966-04-05 | Trw Semiconductors Inc | Impurity diffusion method |
| JPS49116957A (US06582424-20030624-M00016.png) * | 1972-10-25 | 1974-11-08 | ||
| JPS5031777A (US06582424-20030624-M00016.png) * | 1973-07-21 | 1975-03-28 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1561953A (en) | 1980-03-05 |
| DE2734726C2 (de) | 1987-04-16 |
| CA1078948A (en) | 1980-06-03 |
| DE2734726A1 (de) | 1978-02-09 |
| JPS5341193A (en) | 1978-04-14 |
| FR2360998B1 (US06582424-20030624-M00016.png) | 1982-04-09 |
| FR2360998A1 (fr) | 1978-03-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4127932A (en) | Method of fabricating silicon photodiodes | |
| US5525828A (en) | High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields | |
| US7964789B2 (en) | Germanium solar cell and method for the production thereof | |
| US9236519B2 (en) | Geiger-mode avalanche photodiode with high signal-to-noise ratio, and corresponding manufacturing process | |
| US3886579A (en) | Avalanche photodiode | |
| US3508126A (en) | Semiconductor photodiode with p-n junction spaced from heterojunction | |
| US6593636B1 (en) | High speed silicon photodiodes and method of manufacture | |
| US4326211A (en) | N+PP-PP-P+ Avalanche photodiode | |
| US4794439A (en) | Rear entry photodiode with three contacts | |
| US5449943A (en) | Visible and infrared indium antimonide (INSB) photodetector with non-flashing light receiving surface | |
| US4141756A (en) | Method of making a gap UV photodiode by multiple ion-implantations | |
| US4009058A (en) | Method of fabricating large area, high voltage PIN photodiode devices | |
| JPS6155791B2 (US06582424-20030624-M00016.png) | ||
| US4034396A (en) | Light sensor having good sensitivity to visible light | |
| US20100163709A1 (en) | Sensor comprising at least a vertical double junction photodiode, being integrated on a semiconductor substrate and corresponding integration process | |
| EP0001139B1 (en) | Radiation-sensitive avalanche diode and method of manufacturing same | |
| US4463368A (en) | Silicon avalanche photodiode with low keff | |
| US4128843A (en) | GaP Directed field UV photodiode | |
| US4972242A (en) | Silicon avalanche photodiode with low multiplication noise | |
| KR100709645B1 (ko) | 방사 경화된 가시성 ｐ-ｉ-ｎ 검출기 | |
| Melchior et al. | Epitaxial silicon n+-p-π-p+ avalanche photodiodes for optical fiber communications at 800 to 900 nanometers | |
| Melchior et al. | Atlanta fiber system experiment: Planar epitaxial silicon avalanche photodiode | |
| JPS61101084A (ja) | 化合物半導体受光素子の製造方法 | |
| KR100654014B1 (ko) | 대구경 수광부를 위한 전극구조를 구비한 포토 다이오드 | |
| Ahmad et al. | Silicon photodetectors restated |