JPS6154412A - Detecting device - Google Patents
Detecting deviceInfo
- Publication number
- JPS6154412A JPS6154412A JP17646784A JP17646784A JPS6154412A JP S6154412 A JPS6154412 A JP S6154412A JP 17646784 A JP17646784 A JP 17646784A JP 17646784 A JP17646784 A JP 17646784A JP S6154412 A JPS6154412 A JP S6154412A
- Authority
- JP
- Japan
- Prior art keywords
- scanning lines
- sides
- thermistor
- thermistors
- changeover switches
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Force Measurement Appropriate To Specific Purposes (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
Abstract
Description
【発明の詳細な説明】 〔技術分野〕 本発明は、物理量を検出する検出装置に関する。[Detailed description of the invention] 〔Technical field〕 The present invention relates to a detection device that detects a physical quantity.
従来、この種の装置では、第１図に示す様にセンサ１−
１〜１−ｎから直接検出器３に走査線２−１〜２−ｎを
接続していたが、センサが多数になってくると配線数は
膨大な本数になってしまう、そこで第２図に示す様にセ
ンサＲ′１１〜′Ｅ：ｎｎにマトリクス的に走査線Ｘ’
１−Ｋｎ。Conventionally, in this type of device, a sensor 1-
The scanning lines 2-1 to 2-n were connected directly from 1 to 1-n to the detector 3, but as the number of sensors increases, the number of wires becomes enormous. As shown in FIG.
1-Kn.
Ｙ’ ｌ〜Ｙ’ ｎを配線する回路が考えられたが第２
図の回路では、例えばサーミスタＲ′２２を検出する場
合、センサＲ′２２を流れる電流ＩＡの他に他のセンサ
から流れ込む電流、例えばセンサＲ′２１゜Ｒ１’１ｌ
ｌＲ′１２を流れる電流Ｉ８等も同時に検出器３によっ
て検出される為に誤動作が大きく正確な検出が行われな
いという問題があり、この問題を解決すべく考えられた
のが第３図の回路で各サーミスタにダイオードｆを挿入
し他のセンサから電流が流れ込まない様にして、誤動作
を少なくしたが１反面、センサと同数のダイオード等の
整流器が必要であり、コストも高くなり、又、半導体の
ダイオードを使用した場合には、温度により特性が変わ
るために温度センサ等には使用することが出来なかった
。A circuit that wires Y' l to Y' n was considered, but the second
In the circuit shown in the figure, when detecting the thermistor R'22, for example, in addition to the current IA flowing through the sensor R'22, there is also a current flowing from another sensor, for example, the sensor R'21°R1'1l.
Since the current I8 etc. flowing through lR'12 is also detected by the detector 3 at the same time, there is a problem that malfunctions are large and accurate detection cannot be performed.The circuit shown in Fig. 3 was devised to solve this problem. A diode f was inserted in each thermistor to prevent current from flowing from other sensors to reduce malfunctions, but on the other hand, it required the same number of rectifiers as diodes as sensors, which increased the cost. When a diode was used, its characteristics changed depending on the temperature, so it could not be used for a temperature sensor or the like.
又、ダイオードを挿入するスペースがないＪｌ’ｌ’ｌ
逍のものには実現することが出来ないという欠点があ
った。Also, there is no space to insert a diode.
The problem with this was that it could not be realized.
本発明は、上述従来例の欠点を除去すると同時に低コス
トで超小型化の可能な検出装置を提供することを目的と
している。An object of the present invention is to provide a detection device that eliminates the drawbacks of the above-mentioned conventional example and can be made ultra-small at low cost.
以下、本発明の実施例を図面を参照して詳細に説明する
。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第４図は本発明の一実施例の全体構成図である。第４図
に於いて、Ｒ１１〜Ｒｎｎは温度により抵抗値が変化す
るサーミスタでマトリクス状に配列されており、各サー
ミスタの両端が縦横の走査線Ｘ１〜ｘｎ及びＹ１〜ｙｎ
に接続されている。FIG. 4 is an overall configuration diagram of an embodiment of the present invention. In FIG. 4, R11 to Rnn are thermistors whose resistance value changes depending on the temperature, and are arranged in a matrix, and both ends of each thermistor are connected to vertical and horizontal scanning lines X1 to xn and Y1 to yn.
It is connected to the.
ＫＸＩ 〜ＫＸｎ 、ＫＹ １〜ＫＹ Ｈは切換スイッ
チであり、切換スイッチＫＸＩ〜ＫＸｎによって走査線
ｘ１〜ｘｎをａ１〜ａｆｉ側に接続するか、ｂｌ〜ｂｎ
側に接続するかの切換が行われ、ａ１〜ａｎ側に接続す
ると、直流定電圧ｉ；ｊ Ｅに接続することになり、ｂ
１〜ｂｎ側に接続すると接地することになる。KXI to KXn, KY 1 to KY H are changeover switches, and the changeover switches KXI to KXn connect the scanning lines x1 to xn to the a1 to afi sides, or connect the scanning lines
When connected to a1 to an side, it is connected to constant DC voltage i;j E, and b
If connected to the 1 to bn side, it will be grounded.
又、切換スイッチＫＹＩ〜ＫＹｎによって走査線Ｙ１〜
Ｙｎをｌｃ ｌ〜・ｃｎ側に接続するか、ｄ１〜ｄｎ側
に接続するかの切換が行われ、・ｃ−１〜・ｃＬｎ側に
接続すると電流検出回路２に接続することになり、ｄ１
〜ｄｎ側に接続するとグノル １“ ６ こ 、と メ
こ ４ｒ ６ 。In addition, the scanning lines Y1 to Y1 are selected by the changeover switches KYI to KYn.
Switching is performed to connect Yn to the lc l~・cn side or to the d1~dn side, and if it is connected to the c−1~・cLn side, it will be connected to the current detection circuit 2, and d1
~ When connected to the dn side, Gnoll 1" 6 ko, and Meko 4r 6.
又、ｌはリレー制御部であり、該リレー制御部１によっ
て、前記切換スイッチＫＸＩ〜Ｋ Ｘ ｎ 、 Ｋ Ｙ
１〜Ｋ Ｙ ｎの切換が行われ各サーミスタの走査が
行われる。Further, l is a relay control unit, and the relay control unit 1 controls the changeover switches KXI to KXn, KY
1 to K Y n is performed and each thermistor is scanned.
最初走査線ｘ１〜Ｘｎ、Ｙｌ〜ｙｎは前記切換スイッチ
Ｋ Ｘ １ ” Ｋ Ｘ ｎ、 Ｋ Ｙ １〜Ｋ Ｙ
Ｈによってｂ１〜ｂｎ、ｄｌ〜ｄｎ側に接続、すなわち
接地されている。そして、サーミスタＲ１１を測定する
場合、走査線Ｘｉを直流定電圧ａｔ（Ｅに走査線Ｙ１を
電流検出回路２に接続するためにリレー制御部ｌによっ
て、切換スイッチＫＸ１．ＫＹｔがａ １ ｒ Ｃｉ側
に切り換えられる。次にサーミスタＲ１２の測定が行わ
れるが、この時リレー制御部１によって切換スイッチＫ
ＹＩはｄｌ側に切り換えられ、走査線Ｙｌは再び接地さ
れると同時に切換スイッチＫＹ２はと２側に切り換えら
れ走査線Ｙ２は電流検出回路２に接続される。この様に
してサーミスタＲ１１からＲｌｎまでの測定が終了する
とリレー制御部１によって切換スイッチＫＸＩ、ＫＹｎ
がｂｌ、ｄｎ側に切り換えられ、走査線Ｘｌ。The first scanning lines x1 to Xn and Yl to yn are connected to the changeover switches KX1''KXn, KY1 to KY
Connected to the b1-bn and dl-dn sides by H, that is, grounded. When measuring the thermistor R11, in order to connect the scanning line Xi to the DC constant voltage at (E) and the scanning line Y1 to the current detection circuit 2, the relay control unit l sets the changeover switch KX1.KYt to the a 1 r Ci side. Next, the thermistor R12 is measured, but at this time the relay control section 1 switches the changeover switch K.
YI is switched to the dl side, the scanning line Yl is grounded again, and at the same time, the changeover switch KY2 is switched to the and2 side, and the scanning line Y2 is connected to the current detection circuit 2. When the measurement of thermistors R11 to Rln is completed in this way, the relay control unit 1 controls the changeover switches KXI and KYn.
is switched to the bl and dn sides, and the scanning line Xl.
Ｙｎは再び接地されると同時に切換スイッチＫＸ２ 、
ＫＹ ｌがａ ２ ＋ ’ｅ ｌ側に切り換えられ、走
査線ｘ２が直流定電圧にｔＥに走査線Ｙ１が電流検出回
路２に接続され、サーミスタＲ２１の測定が行われ、サ
ーミスタＲ１１〜Ｒ１ｎと同様にサーミスタＲ２１−Ｒ
ｎ２の測定が行われる。上記の様にしてサーミスタＲ１
１〜Ｒｎｎまでの４１１１定が行われる。At the same time as Yn is grounded again, selector switch KX2,
KY l is switched to the a 2 + 'e l side, the scanning line x2 is set to DC constant voltage at tE, the scanning line Y1 is connected to the current detection circuit 2, and the thermistor R21 is measured, similar to thermistors R11 to R1n. Thermistor R21-R
A measurement of n2 is made. Thermistor R1 as above
4111 determinations from 1 to Rnn are performed.
又、切換スイン−Ｆ−ＫＸＩ 〜ＫＸＩ 、 ＫＹ ｌ
〜ＫＹｎの切換動作はリレー；ｌｊＪ御部工部１っテ
行われるかこれは周知のリレー回路４行えるのであえて
説明しない。Also, switching switch-F-KXI ~ KXI, KY l
The switching operation of ~KYn is carried out by a relay; this can be done by a well-known relay circuit, so it will not be explained here.
メ、２は電流検出回路であり、内部抵抗ＲＬとアンプＡ
によって構成されており、サーミスタの抵抗値に応じた
電圧を出力端子Ｂに出力す ゛る。オペレータ
は該出力端子Ｂに出力された電圧値の処理を行う装置を
接続すればよい。2 is a current detection circuit, which includes an internal resistance RL and an amplifier A.
It outputs a voltage to output terminal B according to the resistance value of the thermistor. The operator only has to connect a device that processes the voltage value output to the output terminal B.
今、サーミスタＲ２２を測定する場合を考えてみるとリ
レー制御部ｌによって切換スイッチに、Ｘ ２がａ２側
、切換スイッチＫＹ２が・ｃ２側にＪｔｉ続され、走査
線Ｘ２が直流定電圧源Ｅに、走査線Ｙ２が電流検出回路
２に接続される。Now, if we consider the case of measuring thermistor R22, the relay control unit 1 connects X2 to the a2 side, the changeover switch KY2 to the c2 side, and the scanning line X2 to the DC constant voltage source E. , scanning line Y2 is connected to the current detection circuit 2.
この時の装置の回路図を示したものが第５図であり、第
５図に於いて並列に並んでいるサーミスタＲ２１，Ｒ２
３〜Ｒ２ｎの合成抵抗をＲｘ。Figure 5 shows the circuit diagram of the device at this time, and the thermistors R21 and R2 are arranged in parallel in Figure 5.
Rx is the combined resistance of 3 to R2n.
サーミスタ）ｌ １２ 、 二〜二の合成抵抗をＲＹと
すると、第５図は第６図の等価回路図で表わすことがで
きる。第６図に於いてサーミスタＲ２２を流れる電流を
ｉＥ、電流検出回路２に流れ込む電流をｉＬとすると、
電流検出回路２の内部抵抗ＲＬを合成抵抗ＲＹに比べ非
常に小さい値に設定するとつまりＲｙ＞＞ＲＬとなる様
ＲＬを設定すれば１Ｅ−ｉ＝ｉＬが成り立ち、サーミス
タＲ２２には直流定電圧源Ｅが印加される為に、他のサ
ーミスタによって与えられる影響が殆どなく、サーミス
タＲ２２の抵抗値に応じた電圧が出力端子Ｂに出力され
る。If the thermistor) l 12 and the combined resistance of 2 or 2 are RY, then FIG. 5 can be represented by the equivalent circuit diagram of FIG. 6. In FIG. 6, if the current flowing through the thermistor R22 is iE, and the current flowing into the current detection circuit 2 is iL, then
If the internal resistance RL of the current detection circuit 2 is set to a very small value compared to the combined resistance RY, that is, if RL is set so that Ry>>RL, 1E-i=iL holds true, and the thermistor R22 is connected to a DC constant voltage source. Since E is applied, there is almost no influence from other thermistors, and a voltage corresponding to the resistance value of thermistor R22 is output to the output terminal B.
前記の場合、リレー制御部ｌが自動的に切換スイッチＫ
ＸＩ 〜ＫＸｎ、ＫＹ１〜ＫＹＩの切換を行い全てのサ
ーミスタを検出していくがオペレータが任意に各サーミ
スタを測定する様にリレー制御部ｌをキー人力によって
セットすることも可能である。In the above case, the relay control unit l automatically switches the changeover switch K.
All the thermistors are detected by switching between XI to KXn and KY1 to KYI, but it is also possible for the operator to manually set the relay control unit 1 to measure each thermistor as desired.
又、前記実施例ではサーミスタを用いた回路で説明した
が、その他にも多くの応用が考えられる。Further, in the above embodiment, a circuit using a thermistor was explained, but many other applications are possible.
第７図は、圧力分布センサに応用した図であり、４は圧
力によって抵抗値が変化する導電性ゴムで、該導電性ゴ
ム４の表面に走査線ｘ１〜Ｘｎ、Ｙｌ〜ｙｎをマトリク
ス的に配線して圧力分布センサを実現している。FIG. 7 is a diagram applied to a pressure distribution sensor, where 4 is a conductive rubber whose resistance value changes depending on pressure, and scanning lines x1 to Xn and Yl to yn are arranged in a matrix on the surface of the conductive rubber 4. A pressure distribution sensor is realized by wiring.
第８図は、２次元イメージセンサに応用した図であり、
５は光によって抵抗値が変化する、ＣｄＳ等の光電導体
で、該光電導体５の表面に透明電極である走査線Ｘ１〜
Ｘｎ、Ｙ１〜Ｙｎをマトリクス的に配線して２次元イメ
ージセンサを実現している。尚、２次元イメージセンサ
の実現により１例えば、電子オーバーヘッド装置、マイ
コン・パソコン等の画像入力装置、ビデオカメラなどの
画像入力を行う装置への応用が可能である。FIG. 8 is a diagram applied to a two-dimensional image sensor,
5 is a photoconductor such as CdS whose resistance value changes depending on light, and scanning lines X1 to X1, which are transparent electrodes, are formed on the surface of the photoconductor 5.
A two-dimensional image sensor is realized by wiring Xn and Y1 to Yn in a matrix. Note that by realizing a two-dimensional image sensor, it can be applied to, for example, electronic overhead devices, image input devices such as microcomputers and personal computers, and devices that perform image input such as video cameras.
第９図は、温度分布センサに応用した図で６は温度によ
って抵抗値が変化するサーミスタで、該サーミスタの表
面に走査線ｘ１〜Ｘｎ。FIG. 9 is a diagram applied to a temperature distribution sensor, and 6 is a thermistor whose resistance value changes depending on the temperature, and scanning lines x1 to Xn are formed on the surface of the thermistor.
Ｙ１〜ｙｎをマトリクス的に配線して温度分布センサを
実現している。A temperature distribution sensor is realized by wiring Y1 to yn in a matrix.
尚、第７図、第８図、第９図に示した各種センサは、低
価格で実現出来、又、センサの走力ゝ
査線の数を多くすることにより細く走査することが出来
る。又、センサの大型化、小型化も筒単に行うことが出
来る。The various sensors shown in FIGS. 7, 8, and 9 can be realized at low cost, and can scan finely by increasing the number of scanning lines. Furthermore, the sensor can be easily made larger or smaller.
第１Ｏ図は、マイクロフィルムリーグのスクリーンの光
量ムラ測定装置治具に応用した図で、８はマイクロリー
グ本体、７はフォトセンサである。現在、工場でのマイ
クロフィルムリーグの調整及び検査においてスクリーン
上の光量測定は１点１個のセンサを逐次測定しているが
、第１Ｏ図で示す様に走査線ｘ１〜Ｘｎ。FIG. 1O is a diagram applied to a jig for measuring the light intensity unevenness of a screen of a micro film league, in which 8 is the main body of the micro league, and 7 is a photosensor. Currently, in the adjustment and inspection of microfilm leagues at factories, the amount of light on the screen is measured one by one by one sensor at a time, and as shown in FIG. 1O, scanning lines x1 to Xn.
Ｙ１〜Ｙｎをマトリクス的に配線し、第１図で示した出
力端子Ｂにマイコン等を接続して検査することにより、
簡単に光量ムラの測定を行うことが出来る。By wiring Y1 to Yn in a matrix and connecting a microcomputer etc. to the output terminal B shown in Fig. 1,
Light intensity unevenness can be easily measured.
以上説明した様に本発明に依れば、装置の簡素化、及び
各桂センサの高密度化が可能であり、温度による誤動作
もなくなった。As explained above, according to the present invention, it is possible to simplify the device, increase the density of each Katsura sensor, and eliminate malfunctions due to temperature.
第１図、第２図、第３図は従来の検出装置を示した図で
あり。
第４図は本発明の一実施例の全体構成図、第５図はＲ２
２を測定する時の回路図。
第６図は第５図の等価回路図。
第７図は圧力分布センサの構成図、
第８図は２次元イメージセンサの構成図。
第９図は温度分布センサの構成図、
第１０図はマイクロフィルムルーダのスクリーンの光■
ムラ測定装置治具の構成図である。
１はリレー制御部、２は電流検出回路、３は検出器、４
は導電性ゴム、５はＣｄＳ等の光電導体、６はサーミス
タ、７はフォトセンサ、８はマイクロリーグ本体、１−
１〜ｌ−ｎはサーミスタ、Ｒ′ｌｌ”’Ｒ′ｎ ｎ 、
Ｒ１１〜Ｒｎ ｎはサーミスタ、２−１〜２− ｎ
、 Ｋ １〜Ｘ’ｎ。
Ｙ’ １〜Ｙ’ ｎ 、 Ｘ １〜Ｘ ｎ 、 Ｙ １
〜Ｙ ｎは走査線。
×１〜ｘｎ＋ｙｔ〜・ｙｎは透明電極である走査線、ｆ
はダイオード、ＫＸＩ 〜ＫＸｎ 、ＫＹ １〜ＫＹｎ
は切換スイッチ、ａｌ〜ａｎ、ｂｌ〜ｂ ｎ 、 ｃ
１〜ｃ ｎ 、 ｄ １〜ｄ ｎは切換端子。
Ｅは直流定電源、Ａはアンプ、Ｂは出力端子、ＲＬは電
流検出回路２の内部抵抗、ＲｘはＲ２１゜Ｒ２３〜Ｒ２
ｎの合成抵抗、ＲｙはＲ１２，Ｒ３２〜Ｒｎ２の合成抵
抗、ｉＥはＲ２２を流れる電流。
ｉＬは電流検出回路２に流れ込む電流である。FIG. 1, FIG. 2, and FIG. 3 are diagrams showing conventional detection devices. FIG. 4 is an overall configuration diagram of an embodiment of the present invention, and FIG. 5 is an R2
Circuit diagram when measuring 2. FIG. 6 is an equivalent circuit diagram of FIG. 5. Figure 7 is a configuration diagram of a pressure distribution sensor, and Figure 8 is a configuration diagram of a two-dimensional image sensor. Figure 9 is a configuration diagram of the temperature distribution sensor, Figure 10 is the light from the microfilm router screen.
FIG. 2 is a configuration diagram of an unevenness measuring device jig. 1 is a relay control section, 2 is a current detection circuit, 3 is a detector, 4
5 is a conductive rubber, 5 is a photoconductor such as CdS, 6 is a thermistor, 7 is a photosensor, 8 is a microleague main body, 1-
1 to l-n are thermistors, R'll"'R'n n,
R11~Rn n is thermistor, 2-1~2-n
, K1~X'n. Y'1~Y'n, X1~Xn, Y1
~Y n is a scanning line. ×1~xn+yt~・yn is a scanning line which is a transparent electrode, f
are diodes, KXI ~ KXn, KY 1 ~ KYn
is a changeover switch, al~an, bl~bn, c
1 to c n and d 1 to d n are switching terminals. E is a DC constant power supply, A is an amplifier, B is an output terminal, RL is an internal resistance of the current detection circuit 2, Rx is R21°R23~R2
Ry is the combined resistance of R12, R32 to Rn2, and iE is the current flowing through R22. iL is a current flowing into the current detection circuit 2.
Claims (1)
記センサに複数の走査線をマトリクス的に配線し、２つ
の走査線の選択によって前記センサを走査するにあたり
、前記走査線の選択されていない走査線を一定電位の部
材に接続し、前記走査線の選択された２つの走査線の一
方を電源に接続し、もう一方を電流検知手段に接続する
切換手段を有することを特徴とする検出装置。A detection device for detecting a physical quantity has a sensor, a plurality of scanning lines are wired to the sensor in a matrix, and when scanning the sensor by selecting two scanning lines, the selected one of the scanning lines is Detection characterized in that it has a switching means for connecting a scanning line which is not in use to a member having a constant potential, connecting one of the two selected scanning lines of the scanning line to a power supply, and connecting the other to a current detection means. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17646784A JPS6154412A (en) | 1984-08-24 | 1984-08-24 | Detecting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17646784A JPS6154412A (en) | 1984-08-24 | 1984-08-24 | Detecting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6154412A true JPS6154412A (en) | 1986-03-18 |
Family
ID=16014187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17646784A Pending JPS6154412A (en) | 1984-08-24 | 1984-08-24 | Detecting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6154412A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62206423A (en) * | 1986-03-07 | 1987-09-10 | Yokohama Rubber Co Ltd:The | Tactile sense detection by distribution type tactile sensor and circuit therefor |
| JPH0283423A (en) * | 1988-09-20 | 1990-03-23 | Nec Corp | Temperature monitor apparatus to be carried on artificial satellite |
| JP2009524798A (en) * | 2006-01-27 | 2009-07-02 | 国立大学法人東京工業大学 | Temperature sensor |
| JP2014106070A (en) * | 2012-11-27 | 2014-06-09 | Nissha Printing Co Ltd | Pressed state detection method for pressure sensitive sheet, and pressure sensitive sheet |
| CN105675024A (en) * | 2016-01-04 | 2016-06-15 | 东南大学 | Data reading method and device for resistance sensor array |
| GB2555481A (en) * | 2016-11-01 | 2018-05-02 | Evonetix Ltd | Resistance measurement and current control |
-
1984
- 1984-08-24 JP JP17646784A patent/JPS6154412A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62206423A (en) * | 1986-03-07 | 1987-09-10 | Yokohama Rubber Co Ltd:The | Tactile sense detection by distribution type tactile sensor and circuit therefor |
| JPH0283423A (en) * | 1988-09-20 | 1990-03-23 | Nec Corp | Temperature monitor apparatus to be carried on artificial satellite |
| JP2009524798A (en) * | 2006-01-27 | 2009-07-02 | 国立大学法人東京工業大学 | Temperature sensor |
| JP2014106070A (en) * | 2012-11-27 | 2014-06-09 | Nissha Printing Co Ltd | Pressed state detection method for pressure sensitive sheet, and pressure sensitive sheet |
| CN105675024A (en) * | 2016-01-04 | 2016-06-15 | 东南大学 | Data reading method and device for resistance sensor array |
| GB2555481A (en) * | 2016-11-01 | 2018-05-02 | Evonetix Ltd | Resistance measurement and current control |
| GB2555481B (en) * | 2016-11-01 | 2019-07-17 | Evonetix Ltd | Resistance measurement |
| US11366024B2 (en) | 2016-11-01 | 2022-06-21 | Evonetix Ltd | Resistance measurement and current control |
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