JPS6153877B2 - - Google Patents
Info
- Publication number
- JPS6153877B2 JPS6153877B2 JP10055878A JP10055878A JPS6153877B2 JP S6153877 B2 JPS6153877 B2 JP S6153877B2 JP 10055878 A JP10055878 A JP 10055878A JP 10055878 A JP10055878 A JP 10055878A JP S6153877 B2 JPS6153877 B2 JP S6153877B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- type region
- semiconductor
- breakdown
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015556 catabolic process Effects 0.000 claims description 60
- 239000004065 semiconductor Substances 0.000 claims description 57
- 239000012535 impurity Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 description 25
- 239000000758 substrate Substances 0.000 description 19
- 230000001681 protective effect Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0626—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a localised breakdown region, e.g. built-in avalanching region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10055878A JPS5527618A (en) | 1978-08-17 | 1978-08-17 | Planar diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10055878A JPS5527618A (en) | 1978-08-17 | 1978-08-17 | Planar diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5527618A JPS5527618A (en) | 1980-02-27 |
| JPS6153877B2 true JPS6153877B2 (ko) | 1986-11-19 |
Family
ID=14277253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10055878A Granted JPS5527618A (en) | 1978-08-17 | 1978-08-17 | Planar diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5527618A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63131080U (ko) * | 1987-02-20 | 1988-08-26 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6094780A (ja) * | 1983-10-28 | 1985-05-27 | Hitachi Ltd | 定電圧ダイオ−ド |
| JPS61228677A (ja) * | 1985-04-01 | 1986-10-11 | Rohm Co Ltd | 半導体装置 |
| JPH01290259A (ja) * | 1988-05-18 | 1989-11-22 | Fuji Electric Co Ltd | 半導体装置 |
| JPH0288753A (ja) * | 1988-09-27 | 1990-03-28 | Natl Res Inst For Metals | 溶融めっきアルミニウム |
| JPH02111078A (ja) * | 1988-10-20 | 1990-04-24 | Matsushita Electron Corp | 半導体装置 |
| JP2006222213A (ja) * | 2005-02-09 | 2006-08-24 | Matsushita Electric Ind Co Ltd | サージ保護用半導体素子およびその製造方法 |
-
1978
- 1978-08-17 JP JP10055878A patent/JPS5527618A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63131080U (ko) * | 1987-02-20 | 1988-08-26 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5527618A (en) | 1980-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3751976B2 (ja) | 炭化ケイ素サイリスタ | |
| US4972239A (en) | Conductivity modulated MOSFET | |
| US4037245A (en) | Electric field controlled diode with a current controlling surface grid | |
| JPH037149B2 (ko) | ||
| KR19980032845A (ko) | 제 1 확산링에서 공간을 이룬 알루미늄 배리어 금속을 가진 고전압 전력 쇼트키 | |
| US4617583A (en) | Gate turn-off thyristor | |
| US4132996A (en) | Electric field-controlled semiconductor device | |
| US5747841A (en) | Circuit arrangement, and junction field effect transistor suitable for use in such a circuit arrangement | |
| US6734520B2 (en) | Semiconductor component and method of producing it | |
| US3337783A (en) | Shorted emitter controlled rectifier with improved turn-off gain | |
| US4611235A (en) | Thyristor with turn-off FET | |
| US5936267A (en) | Insulated gate thyristor | |
| JPH0126187B2 (ko) | ||
| US4236169A (en) | Thyristor device | |
| JPS6153877B2 (ko) | ||
| US3083302A (en) | Negative resistance semiconductor device | |
| JPH05226638A (ja) | 半導体装置 | |
| JPH06283727A (ja) | 電力用半導体素子 | |
| US3331000A (en) | Gate turn off semiconductor switch having a composite gate region with different impurity concentrations | |
| US6388306B1 (en) | Semiconductor device with rapid reverse recovery characteristic | |
| US4258377A (en) | Lateral field controlled thyristor | |
| US4331969A (en) | Field-controlled bipolar transistor | |
| US6559515B1 (en) | Insulating wall between power components | |
| US4305084A (en) | Semiconductor switching device capable of turn-on only at low applied voltages using self pinch-off means | |
| US4609933A (en) | Gate turn-off thyristor having P+ gate and emitter |