JPS6153767A - Photoelectric conversion element - Google Patents
Photoelectric conversion elementInfo
- Publication number
- JPS6153767A JPS6153767A JP59175188A JP17518884A JPS6153767A JP S6153767 A JPS6153767 A JP S6153767A JP 59175188 A JP59175188 A JP 59175188A JP 17518884 A JP17518884 A JP 17518884A JP S6153767 A JPS6153767 A JP S6153767A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoelectric conversion
- spectral sensitivity
- conversion element
- sensitivity characteristics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 39
- 230000035945 sensitivity Effects 0.000 claims abstract description 33
- 230000003595 spectral effect Effects 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000003491 array Methods 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000001514 detection method Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 description 26
- 230000000694 effects Effects 0.000 description 11
- 239000010409 thin film Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000014121 butter Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は半導体の接合を利用した光電変換素子に関する
。さらに詳述すれば、光電変換素子として、使用する半
導体材料が材料固有の分光感度特性を有することに着目
して、異なった分光感度特性を有する半導体からなる少
なくとも２つの種類の光電変換素子を組み合わせて同一
基板上に並置することによシ、波長検出感度が広い波長
範囲にわたシはぼ一様な特性を示すようにした光電変換
素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a photoelectric conversion element using semiconductor junctions. More specifically, focusing on the fact that the semiconductor material used in the photoelectric conversion element has its own spectral sensitivity characteristics, at least two types of photoelectric conversion elements made of semiconductors having different spectral sensitivity characteristics are combined. The present invention relates to a photoelectric conversion element in which wavelength detection sensitivity exhibits approximately uniform characteristics over a wide wavelength range by being arranged side by side on the same substrate.
従来、光電変換素子は数多〈発明されてきた。 Conventionally, many photoelectric conversion elements have been invented.
例えば、光電子放出効果を利用した光電子増倍管（ホト
マル）がおり、その光電子放出面には、Ｃ３Ｉ 、 Ｃ
ｇＴｅ ＋ ５ｂＣ３などが使用されているが、一般に
高電圧、真空ガラス容器を必要とするために小型化、安
価な光電変換素子にはなシにくく、また光検出感度は波
長に大きく依存する。For example, there is a photomultiplier tube (photomultiplier) that uses the photoelectron emission effect, and its photoelectron emission surface has C3I, C
gTe + 5bC3 and the like have been used, but they generally require high voltage and a vacuum glass container, making them difficult to use as small, inexpensive photoelectric conversion elements, and the photodetection sensitivity largely depends on the wavelength.
また、光起電力効果を利用した光電変換素子には、ホト
ダイオード、ホトトランジスタなどがあり、特に、光通
信用の光電変換素子としてはｐ〜ｉ−ｎホトダイオード
や、アバランシェホトダイオードなどが用いられる。ｐ
−１−ｎホトダイオードは、ＰＮ接合の間に高純度（真
性；工）層を挿入して接合容量を小さくし、光吸収層を
拡大することにより高感度化したものであシ、またアバ
ランシェホトダイオードは、半導体中のなだれ現象を利
用したホトダイオードである。ＰＮ接合あるいはジット
キー接合を逆バイヤスし、１０ Ｖ ／ａｎ程度の高電
界中で光照射により発生したキャリヤを加速し、原子と
衝突させ電子−正孔対を発生させる。再び、これらのキ
ャリヤを加速し、衝突電子を繰り返して増幅作用を得て
いる。また、逆バイヤスの制御により増幅率を変えるこ
とができるため大きなダイナミックレンジを祷ることが
できる。ホトダイオードでは、一般に、Ｓｉ 、 Ｇｅ
。Further, photoelectric conversion elements that utilize the photovoltaic effect include photodiodes, phototransistors, and the like, and in particular, p-i-n photodiodes, avalanche photodiodes, and the like are used as photoelectric conversion elements for optical communication. p
-1-n photodiodes have high sensitivity by inserting a high purity (intrinsic) layer between the PN junctions to reduce the junction capacitance and enlarging the light absorption layer, and avalanche photodiodes. is a photodiode that utilizes the avalanche phenomenon in semiconductors. The PN junction or the Jittky junction is reverse biased, and carriers generated by light irradiation are accelerated in a high electric field of about 10 V/an and collide with atoms to generate electron-hole pairs. Again, these carriers are accelerated and the collision of electrons is repeated to obtain an amplification effect. Furthermore, since the amplification factor can be changed by controlling the reverse bias, a large dynamic range can be achieved. Photodiodes generally use Si, Ge
.
ＩＭＦ 、 Ｇ＆ＡｇＰ ＋ １１Ｇ１Ａ３ ＋ １１
ＧａＡａＰ ＋ などを用いているが、異なった禁制
帯幅の半導体を組み合わせて同一基板上にアレイを形成
していないために、波長に対する分光感度特性は狭く、
より広い波長に対して検出を行う場合には、異なった分
光感度特性の光電変換素子を複数個使用しなければなら
ない。また、異なった分光感度特注の光電変換素子を複
数個使用する場合には、各々の検出感度、 。IMF, G&AgP + 11G1A3 + 11
GaAaP + etc. are used, but because semiconductors with different forbidden band widths are not combined to form an array on the same substrate, the spectral sensitivity characteristics with respect to wavelength are narrow.
When performing detection over a wider range of wavelengths, it is necessary to use a plurality of photoelectric conversion elements with different spectral sensitivity characteristics. In addition, when using multiple custom-made photoelectric conversion elements with different spectral sensitivities, the detection sensitivity of each,
応答特性、暗電流を補正する必要がある。It is necessary to correct the response characteristics and dark current.
また、分光感度が波長に依存しない光電変換素子として
は、光吸収層に全黒を用いた熱電対形センサや光吸収に
よる昇温効果を利用した焦電素子があるが、いずれも熱
電変換方式を用いているので、検出感度・応答特性に限
界があシ、高感度・高速応答を示す光電変換素子は得ら
れていない。In addition, as photoelectric conversion elements whose spectral sensitivity does not depend on wavelength, there are thermocouple type sensors that use all black in the light absorption layer and pyroelectric elements that utilize the temperature raising effect due to light absorption, but both of them use thermoelectric conversion. , there are limits to detection sensitivity and response characteristics, and a photoelectric conversion element that exhibits high sensitivity and high-speed response has not been obtained.
〔発明の要約・発明を構成する手段〕 。[Summary of the invention/Means constituting the invention].
本発明は上記先行技術が備えていた欠点を除去し、広い
波長範囲で分光感度特性が一様な光電変換素子を提供す
ることを目的としている。本発明では、異なった分光感
度特性を有する、ｐ−４−％−ｎ層（または、ｎ−１−
ｐ層）構造のホトダイオードを、少なくとも２種類組み
合わせ、しかも、それらホトダイオードを複数個配列し
たホトダイオードアレイを宿成し、この時、各々のホト
ダイオードの分光感度特性の和が異なった波長に対して
、全体でほぼ一様になるように光電変換すべき光を受け
る範囲、すなわち受光面積を分配する構成とし、この構
成によυ応答特性、暗電流の補正の必要のない光電変換
素子を提供するものである。The present invention aims to eliminate the drawbacks of the above-mentioned prior art and provide a photoelectric conversion element with uniform spectral sensitivity characteristics over a wide wavelength range. In the present invention, the p-4-%-n layer (or n-1-%
A photodiode array is formed by combining at least two types of photodiodes with a p-layer (p-layer) structure and arranging a plurality of these photodiodes. At this time, the sum of the spectral sensitivity characteristics of each photodiode is This structure distributes the range of light to be photoelectrically converted, that is, the light receiving area, so that it is almost uniform at 100 nm, and this structure provides a photoelectric conversion element that does not require correction of υ response characteristics and dark current. be.
第１図及び第２図は本発明による光電変換素子の一実施
例（第１実施例）の構成を示す図であり、第１図は平面
図、第２図は第１図の線ｘ−Ｘにおける断面図をそれぞ
れ示す。両図とも発明の構成を明示するために、模式的
に描いである。1 and 2 are diagrams showing the configuration of an embodiment (first embodiment) of a photoelectric conversion element according to the present invention, in which FIG. 1 is a plan view and FIG. 2 is a line x-- A cross-sectional view at X is shown respectively. Both figures are schematically drawn to clearly illustrate the structure of the invention.
図中、１は基板、２は導電膜、３は第１の分光感度特性
を有するｐ−１−ｎ層（またはｎ−％−ｉ〜ｐ層）構造
の第１の（柵類の）ホトダイオードアレイ、４は第２の
分光感度特性を有する第２の（拙類の）ホトダイオード
アレイ、５は素子分離用絶縁膜、６は導電膜、７・８は
取シ出し用電極であり、１は本発明の光電変換素子の全
体を相称する符号である。第１のホトダイオードアレイ
と第２のホトダイオードアレイは、図示の実施例では、
交互にハニカム状に配列されている。この配列の仕方は
全体の分布が均一で、しかも稠密に配列できる一つの例
である。すなわち、被測定光ビーム２０・２１が光電変
換素子９の受光面積よシ一般に小さいので、ビーム位置
による感度のバラツキをなくすためによい。矢印２０．
２１は光ビームの入射方向を示す。第５図は本実施例の
分光感度特性を示す。なお、図中特性曲線Ａ、Ｂはそれ
ぞれ第１の種類及び第２の種類のホトダイオードの特性
を示す。両者の組み合せによシ広い波長範囲で平坦な特
性が得られる。基板１に不透明基板を用いた場合には、
光ビームは矢印２０の方向よシ入射され、透明導電膜６
を透してホトダイオードアレイ３．４によυ検知される
。一方、基板１に透明基板、例えば透明石英ガラスを用
いた場合には、矢印２１の方向より光ビームを入射させ
ることができる。この場合、透明導電膜６の代わりにＭ
等の不透明金属膜を用いることができる。また、基板、
各導電膜に透明なものを用いれば、入射された光ビーム
の一部を吸収して入射された光ビームの光量を検出し、
吸収されなかった大部分の光ビームを透過させる、いわ
ゆるブＣ透過形光電変換素子を構成することができる。In the figure, 1 is a substrate, 2 is a conductive film, and 3 is a first (fence type) photodiode having a p-1-n layer (or n-%-i to p layer) structure having a first spectral sensitivity characteristic. 4 is a second (our kind) photodiode array having second spectral sensitivity characteristics; 5 is an insulating film for element isolation; 6 is a conductive film; 7 and 8 are extraction electrodes; These are symbols that represent the entire photoelectric conversion element of the present invention. In the illustrated embodiment, the first photodiode array and the second photodiode array are
They are arranged in an alternating honeycomb pattern. This arrangement is an example of a uniform overall distribution and a dense arrangement. That is, since the light beams 20 and 21 to be measured are generally smaller than the light receiving area of the photoelectric conversion element 9, this is good for eliminating variations in sensitivity depending on the beam position. Arrow 20.
21 indicates the direction of incidence of the light beam. FIG. 5 shows the spectral sensitivity characteristics of this example. Note that characteristic curves A and B in the figure represent the characteristics of the first type and second type of photodiode, respectively. By combining the two, flat characteristics can be obtained over a wide wavelength range. When an opaque substrate is used as the substrate 1,
The light beam is incident in the direction of the arrow 20, and the transparent conductive film 6
υ is detected by the photodiode array 3.4 through the photodiode array 3.4. On the other hand, when a transparent substrate such as transparent quartz glass is used as the substrate 1, the light beam can be incident from the direction of the arrow 21. In this case, instead of the transparent conductive film 6, M
An opaque metal film such as can be used. In addition, the substrate,
If a transparent conductive film is used for each conductive film, a portion of the incident light beam will be absorbed and the amount of the incident light beam will be detected.
A so-called B-C transmission type photoelectric conversion element that transmits most of the light beam that is not absorbed can be constructed.
この光透過形光電変換素子は、入射された光ビームの一
部（１〜１０チ）を吸収することによシ光ビームの全光
量を検出するとともに、大部分の光量（９０〜９９チ）
は光電変換素子を透過するので、そのまま計測用信号や
レーザ加工用光ビームとして使用できる。しかも、この
光電変換素子を透過した後の光ビームは光量が既知なの
で、高精度な計測には非常に有用となる。いいかえれば
、従来方式の光分波用ミラーと光検出器を一体化させた
ものを構成できる。This light transmission type photoelectric conversion element detects the total amount of light beam by absorbing a part (1 to 10 inches) of the incident light beam, and detects the majority of the light amount (90 to 99 inches).
Since it passes through the photoelectric conversion element, it can be used as it is as a measurement signal or a light beam for laser processing. Moreover, since the light intensity of the light beam after passing through this photoelectric conversion element is known, it is extremely useful for highly accurate measurement. In other words, it is possible to configure a conventional optical demultiplexing mirror and a photodetector integrated together.
第３図および第４図は本発明による他の一実施例（第２
実施例）を示す図で、第４図は第３図の線Ｘ−Ｘ’にお
ける断面を示す図である。両図とも発明の構成を明示す
るために模式的に描いである。FIGS. 3 and 4 show another embodiment (second embodiment) of the present invention.
FIG. 4 is a cross-sectional view taken along line XX' in FIG. 3. Both figures are schematically drawn to clearly illustrate the structure of the invention.
図中、１１はｐ （ｎ ）形の第１の半導体基板、１２
は基板用オーミック電極、１３は第１の半導体薄膜層よ
りなるホトダイオードアレイ、１４は第２の半導体薄膜
層よシなるホトダイオードアレイ、１５は素子分離用絶
縁膜、１Ｇは透明導電膜、１７ 、１８は各取り出し電
極をそれぞれ示す。第２の半導体薄膜よりなるホトダイ
オードアレイは第１の半導体基板の一部を除去した凹部
、あるいは第１の半導体基板上に設けられる。作用効果
については第１実施例と類似である。In the figure, 11 is a p (n) type first semiconductor substrate, 12
13 is an ohmic electrode for a substrate, 13 is a photodiode array made of a first semiconductor thin film layer, 14 is a photodiode array made of a second semiconductor thin film layer, 15 is an insulating film for element isolation, 1G is a transparent conductive film, 17, 18 indicates each extraction electrode. A photodiode array made of a second semiconductor thin film is provided in a recessed portion of the first semiconductor substrate or on the first semiconductor substrate. The operation and effect are similar to the first embodiment.
次に製造方法について述べる。よく研磨された透明又は
不透明基板に導電膜を形成し、第１のホトダイオードア
レイ用のｐ−１−ｎ層を堆積する。Next, the manufacturing method will be described. A conductive film is formed on a well-polished transparent or opaque substrate, and a p-1-n layer for the first photodiode array is deposited.
そして、不要部を除去後、第２のホトダイオードアレイ
用のｐ−１−ｎ層を堆積する。さらに素子分離用絶縁膜
を堆積後、第１および第２のホトダイオードアレイ用の
各ｐ−１−ｎ層に電極用導電膜を堆積する。最後に取シ
出し′ｒＭ、極を設ける。After removing unnecessary parts, a p-1-n layer for a second photodiode array is deposited. Furthermore, after depositing an insulating film for element isolation, a conductive film for electrodes is deposited on each p-1-n layer for the first and second photodiode arrays. Finally, the extraction 'rM and poles are provided.
また、第３図及び第４図で示した第２実施例の製造方法
としては、ｐ＋（ｎ層）形の第１の半導体基板上にｉ
−ｎ層層を成長させ、第１のホトダイオードアレイ用ｐ
＋−１−ｎ＋層を形成する。そして、不要部を除去して
凹部を形成し、該凹部にＷＪ２のホトダイオードアレイ
用の第２の半導体薄膜よりなるｐ”−１−ｎ層層を形成
する。この場合、第１の半導体のｐ−ｈ層と第２の半導
体薄膜のｐ＋層はへテロ接合となるのでオーミック性を
得るため導電膜を挿入する（図示せず）。また、素子分
離用絶縁膜を堆積後、電極用導電膜を形成し、最後に第
１の半導体のｐ＋層にオーミック電極を設ける。第１お
よび第２の半導体薄膜はＭＯＣＶＤ法、ＭＢＥ法、プラ
ズマＣＶＤ法、光ＣＶＤ法等を用いて低温で作成できる
。シリコン窒化膜やシリコン鼓化膜で構成される素子分
離用絶縁膜の形成法としては、低温で絶縁性に秀れ、か
つ、ステップカバレッジのよいプラズマＣＶＤ法やイオ
ンプレーテング法を用いて堆積させることができる。導
電膜としては、Ｉ 、Ｔ、ＯやＳｎＯ□膜よυなる透明
導電膜とＡｔ 、 ＮｉＣｒ／Ａ、 、 Ｗ 、 Ｐｊ
Ｓｉ２１ Ａｇ等の金属薄膜がそれぞれの用途に応じて
用いられる。導電膜の形成には真空蒸着法、イオンプレ
ーテング法、スパッタ法を用いる。ダイオードアレイを
構成するバター二／グ法としてはホトエツチング法やレ
ーザビームスクライブ法を用いる。なお、以上の実施例
の説明においては、２拙類の異なった分光感度特性を有
するホトダイオードアレイの配列よシなる光Ｍ、変換素
子について説明したが、検出波長域、検出感度の平坦性
等の目的に応じて、３種類以上の異なった分光感度特性
を有するホトダイオードアレイを配列した光電変換素子
を構成できる。Further, as a manufacturing method of the second embodiment shown in FIGS. 3 and 4, an i
- grow an n-layer layer, p for the first photodiode array;
+-1-n+ layer is formed. Then, unnecessary parts are removed to form a recessed part, and a p''-1-n layer made of a second semiconductor thin film for the photodiode array of WJ2 is formed in the recessed part. Since the -h layer and the p+ layer of the second semiconductor thin film form a heterojunction, a conductive film is inserted to obtain ohmic properties (not shown).Also, after depositing an insulating film for element isolation, a conductive film for electrodes is inserted. Finally, an ohmic electrode is provided on the p+ layer of the first semiconductor.The first and second semiconductor thin films can be formed at low temperatures using MOCVD, MBE, plasma CVD, photo-CVD, or the like. As a method for forming an insulating film for element isolation consisting of a silicon nitride film or a silicon nitride film, it is deposited using the plasma CVD method or ion plating method, which has excellent insulation properties at low temperatures and has good step coverage. The conductive film can be a transparent conductive film such as I, T, O or SnO□ film, and At, NiCr/A, , W, Pj.
Metal thin films such as Si21Ag are used depending on the application. A vacuum evaporation method, an ion plating method, and a sputtering method are used to form the conductive film. A photoetching method or a laser beam scribing method is used as the butter diode method for constructing the diode array. In the explanation of the above embodiments, the light M and the conversion element, which are arrays of photodiode arrays having two different spectral sensitivity characteristics, have been explained. Depending on the purpose, a photoelectric conversion element can be constructed by arranging photodiode arrays having three or more different spectral sensitivity characteristics.
次に本発明による効果を述べる。 Next, the effects of the present invention will be described.
（１）２種類以上の異なる分光感度特性を有するホトダ
イオードを複数個、交互にハニカム状に配列し、共通の
電極より検出信号を取り出す方式としたので、波長依存
性のない高感度・高速応答を示す光電変換素子を溝底す
ることができた。(1) Multiple photodiodes with two or more different spectral sensitivity characteristics are arranged alternately in a honeycomb shape, and the detection signal is extracted from a common electrode, achieving high sensitivity and high-speed response without wavelength dependence. We were able to fabricate the photoelectric conversion element shown below.
（２）基板および導電膜に光透過性を示すものを用いる
ことによυ、被測定用光ビームの一部を吸収し、透過し
た光量既知の光ビームを取シ出すことのできる透過形光
電変換素子ｆ、栂成できた。(2) By using a substrate and a conductive film that exhibits optical transparency, a transmission type photoelectric device can absorb a part of the light beam to be measured and extract a light beam with a known amount of transmitted light. Conversion element f was completed.
（３）ホトエツチング技術に代表される微細加工技術を
用いることができるので、安価で高精度・高信頼性の光
電変換素子を構成できた。(3) Since microfabrication technology represented by photoetching technology can be used, it is possible to construct a photoelectric conversion element that is inexpensive, highly accurate, and highly reliable.
（４）光企検出部に光起電力効果や光導電効果を用いて
いるので、従来の熱電変換形と比較して、高感度・高速
応答性を有し、かつ検出感度が一様な光電変換素子を構
成できた。(4) Since the optical sensor uses a photovoltaic effect or a photoconductive effect, it has higher sensitivity and faster response than conventional thermoelectric conversion type, and has uniform detection sensitivity. The conversion element was constructed.
（５）ブｅ ｆＴの検出原理として光起電力効果を用い
ているので、直流電圧を検出信号として得られるため回
路構成が容易な光量測定装量を構成することができた。(5) Since the photovoltaic effect is used as the detection principle of fT, it is possible to obtain a direct current voltage as a detection signal, making it possible to construct a light amount measuring device with an easy circuit configuration.
以上述べたように本発明による光電変換素子は、従来の
光電変換素子と比較して幾多の利点を有しているので産
築上の利用効果は太きい。As described above, the photoelectric conversion element according to the present invention has many advantages compared to conventional photoelectric conversion elements, and therefore has great practical effects in terms of construction.
第１図及び第２図は本発明による光電変換素子の一実施
例を示す図で、第２図は第１図の線Ｘ−Ｘ′における断
面を示す図、第３図及び第４図は本発明による光電変換
素子の他の一実施例を示す図で、第４図は第３図の線ｘ
−ｘ’における断面を示す図である。第５図は本発明
の第１実施例の特性を示す図である。
図中、１・１１は各基板、２・６・１６は各導電膜。
３・４・１３ ＠１４は各ダイオードアレイ、５・１５
は素子分離用絶縁膜、７・８・１７・１８ は各電極。
９・１９は各光電変換素子、１２はオー沁り電極を
１それぞれ示す。
特許出願人 安立電気株式会社
代理人 弁理士 小池 龍太部
１１５ノ防
謁３巴
ユ
第４ヅ
ユ1 and 2 are diagrams showing one embodiment of a photoelectric conversion element according to the present invention, FIG. 2 is a diagram showing a cross section taken along line X-X' in FIG. 1, and FIGS. FIG. 4 is a diagram showing another embodiment of the photoelectric conversion element according to the present invention, and FIG. 4 is a diagram showing the line x in FIG.
It is a figure which shows the cross section at -x'. FIG. 5 is a diagram showing the characteristics of the first embodiment of the present invention. In the figure, 1 and 11 are each substrate, and 2, 6, and 16 are each conductive film. 3.4.13 @14 is each diode array, 5.15
is an insulating film for element isolation, and 7, 8, 17, and 18 are each electrode. 9 and 19 are each photoelectric conversion element, and 12 is an O-hole electrode.
1 are shown respectively. Patent Applicant Anritsu Electric Co., Ltd. Agent Patent Attorney Ryuta Koike 115 Audience 3 Tomoe 4th Part
Claims (1)
ｉ−ｎ層（またはｎ−ｉ−ｐ層）構造の第１のホトダイ
オードアレイ（３）と； 該第１のホトダイオードアレイと並置されて該基板上に
形成された第２の分光感度特性を有するｐ〜ｉ〜ｎ層（
またはｎ〜ｉ〜ｐ層）構造の第２のホトダイオードアレ
イ（４）と； 該第１及び第２のホトダイオードアレイ（３、４）の各
ｐ層（またはｎ層）に接続された第１の導電膜（２）と
； 該第１及び第２のホトダイオードアレイ（３、４）の各
ｎ層（またはｐ層）に接続された第２の導電膜（６）と
から構成され、ｐ層またはｎ層を通って光をｉ層に導く
ようにされた光電変換素子であって、該第１及び第２の
ホトダイオードアレイ（３、４）の受光面積比が該第１
及び第２の分光感度特性比のほぼ逆数となるようにされ
ていることを特徴とする波長検出感度特性がほぼ一様な
光電変換素子。（２）前記基板が、第１および第２のホ
トダイオードアレイのｐ層（またはｎ層）と一体化され
たｐ＾＋（またはｎ＾＋）半導体基板であって、それぞ
れ形成されたｉ〜ｎ層（またはｉ〜ｐ層）構造の第１及
び第２のホトダイオードアレイから成ることを特徴とす
る特許請求の範囲第１項記載の光電変換素子。(1) A substrate (1); and a p-
a first photodiode array (3) having an i-n layer (or n-i-p layer) structure; having a second spectral sensitivity characteristic formed on the substrate in juxtaposition with the first photodiode array; p~i~n layer (
a second photodiode array (4) having a structure (or n~i~p layers); A conductive film (2); and a second conductive film (6) connected to each n-layer (or p-layer) of the first and second photodiode arrays (3, 4); A photoelectric conversion element configured to guide light to an i-layer through an n-layer, wherein the light-receiving area ratio of the first and second photodiode arrays (3, 4) is
and a second spectral sensitivity characteristic ratio, the photoelectric conversion element having substantially uniform wavelength detection sensitivity characteristics. (2) The substrate is a p^+ (or n^+) semiconductor substrate integrated with the p layer (or n layer) of the first and second photodiode arrays, and each of the formed i to n 2. The photoelectric conversion element according to claim 1, comprising first and second photodiode arrays having a layer (or i to p layer) structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59175188A JPS6153767A (en) | 1984-08-24 | 1984-08-24 | Photoelectric conversion element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59175188A JPS6153767A (en) | 1984-08-24 | 1984-08-24 | Photoelectric conversion element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6153767A true JPS6153767A (en) | 1986-03-17 |
| JPH0533543B2 JPH0533543B2 (en) | 1993-05-19 |
Family
ID=15991820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59175188A Granted JPS6153767A (en) | 1984-08-24 | 1984-08-24 | Photoelectric conversion element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6153767A (en) |
-
1984
- 1984-08-24 JP JP59175188A patent/JPS6153767A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0533543B2 (en) | 1993-05-19 |
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