JPS6153130A - Low expansion glass - Google Patents

Low expansion glass

Info

Publication number
JPS6153130A
JPS6153130A JP59172435A JP17243584A JPS6153130A JP S6153130 A JPS6153130 A JP S6153130A JP 59172435 A JP59172435 A JP 59172435A JP 17243584 A JP17243584 A JP 17243584A JP S6153130 A JPS6153130 A JP S6153130A
Authority
JP
Japan
Prior art keywords
glass
al2o3
expansion
low
mgo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59172435A
Other languages
Japanese (ja)
Other versions
JPH0146460B2 (en
Inventor
Shigeki Morimoto
森本 繁樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central Glass Co Ltd
Original Assignee
Central Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd filed Critical Central Glass Co Ltd
Priority to JP59172435A priority Critical patent/JPS6153130A/en
Publication of JPS6153130A publication Critical patent/JPS6153130A/en
Publication of JPH0146460B2 publication Critical patent/JPH0146460B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60Substrates

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Glass Compositions (AREA)

Abstract

PURPOSE:A low-expansion glass that is obtained by using SiO2, Al2O3, B2O3, MgO, ZnO, BaO, Na2O in a specific proportion, thus being suitable for use in photoetching mask. CONSTITUTION:The objective low-expansion glass is composed of 55-68wt% of SiO2, 15-24wt% of Al2O3, 2-8wt% of B2O3, 3-10wt% of MgO, 0.3-10wt% of ZnO, 0-3wt% of BaO, 0-2wt% of Na2O and has (Al2O3+B2O3)/(MgO+ZnO+ BaO+Na2O) of 0.9-11 in moles. Further the molar ratio of Al2O3/B2O3 is preferably 1.4-8. The resultant glass has low expansion, and a pattern of high integration can be drawn, because it is low in expansion. Further, it can sufficiently stand etching and cleaning and the violet rays suitable for photoresists can be well transmitted.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は低膨張ガラス組成に関し、詳しくはフォトエツ
チングマスク用として好適な低膨張ガラス組成に関する
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a low expansion glass composition, and more particularly to a low expansion glass composition suitable for use in photoetching masks.

フォトエツチング法におけるガラスマスクは通常ガラス
板に蒸着法またはスパッタリング法等によシ金属クロム
を膜付し、次いでフォトレジストを塗布し、該塗布面に
レティクル(中間原版)からの投影画像を露光して焼付
し、さらに酸やアルカリ等によるエツチングや洗浄によ
シフオドレジストを剥離し、かつ膜付したクロムの不要
部分を除去してパターンを形成することによシ得られる
The glass mask used in the photoetching method is usually made by applying a film of metallic chromium to a glass plate by vapor deposition or sputtering, then applying a photoresist, and exposing the applied surface with a projected image from a reticle (intermediate original). The pattern can be obtained by baking the resist, peeling off the shift resist by etching or cleaning with acid or alkali, and removing unnecessary portions of the chromium film to form a pattern.

このガラスマスクは、たとえば集積回路の製作に用いら
れ、予めフォトレジストを塗布したシリコン基板に前記
クロムのパターンを形成したガラスマスクを当て、露光
して焼付し、エツチング、洗浄等を行うことによシ、集
積回路パターンを施した基板が得られる。
This glass mask is used, for example, in the production of integrated circuits, and is made by applying the glass mask with the chromium pattern formed on a silicon substrate coated with photoresist in advance, exposing it to light, baking it, etching it, cleaning it, etc. A substrate with an integrated circuit pattern is obtained.

フォトエツチングマスク用ガラスとして好ましい条件は
、前記露光過程において光からもたらされる熱に光分耐
え、また膨張収縮せず、したがって基板にシャープなパ
ターンを抽けること、フォトレジストの焼付に効果的な
短波長ことに紫外域の光をよく透過すること、エツチン
グや洗浄過程で用いられる酸あるいは゛アルカリ等に充
分耐えうろことが挙げられるが、勿論光を均一に透過さ
せるうえで充分均質化されており気泡、未浴解、異物、
脈理等がなく、また表面がきわめて平滑であることも重
要な条件である。
The preferred conditions for glass for photo-etching masks are that it can withstand the heat generated by the light during the exposure process, does not expand or contract, and therefore allows a sharp pattern to be drawn on the substrate, and has a short time that is effective for baking photoresist. In particular, it must be able to transmit light in the ultraviolet range well, and it must be sufficiently resistant to acids and alkalis used in etching and cleaning processes. bubbles, undecomposed water, foreign matter,
It is also important that there are no striae and the surface is extremely smooth.

(従来の技術) 従来フォトエツチングマスク用ガラスとして周知のもの
は、SiO2− B2O3−Na2O系のパイレックス
ガラス(たとえば昭オ047年1月15日発行セラミッ
クス手帳第604頁)があるが、組成中にSiO□を8
0%以上も含有するため通常のガラス溶融温度すなわち
1500〜1550 ℃では溶融し難く、また粘性が高
いため泡切れが困難でかつ均質なガラスが得難いという
欠点があった。
(Prior Art) A conventionally well-known glass for photoetching masks is SiO2-B2O3-Na2O-based Pyrex glass (for example, Ceramics Notebook, page 604, published January 15, 1989); SiO□8
Since it contains 0% or more, it is difficult to melt at the normal glass melting temperature, that is, 1,500 to 1,550°C, and its high viscosity makes it difficult to break bubbles and make it difficult to obtain a homogeneous glass.

また、公知の低膨張ガラスとしては、Si○;71.。Further, as a known low expansion glass, Si○; 71. .

〜75.5 wt%、Al2O,2,2〜3.2 wt
%、B2O3,16,0〜21.Owt%、CaOO〜
0.6 wt%、MgO0−5−0,6w t%、Ba
oo〜2Wt、%、ZnOO〜I wt%、Li2O0
,4〜2.2 wt%、Na2゜O,8〜3.3 wt
%、K2O01〜3.Owt%、Li2O+Na2O+
に2O3.3〜6.Owt%の成分が全体の98wt%
以上のガラス(特開昭49−39607号)や、SiO
255〜70 m01%、Al2O37〜I 3 m0
1%、CaO7〜2O m01%、MgO3〜l 3m
o1%、ZnO3〜13 m01%、K2OまたはNa
2O0,5〜3mo1%、pbQ O〜l I m01
%、ZrO□0〜3mo1%からなるフォトエツチング
マスク用ガラス(特開昭58−41736号)が知られ
ている。
~75.5 wt%, Al2O, 2,2~3.2 wt
%, B2O3, 16,0-21. Owt%, CaOO~
0.6 wt%, MgO0-5-0,6 wt%, Ba
oo~2Wt,%, ZnOO~I wt%, Li2O0
, 4-2.2 wt%, Na2゜O, 8-3.3 wt%
%, K2O01~3. Owt%, Li2O+Na2O+
2O3.3-6. Owt% component is 98wt% of the whole
The above glass (Japanese Patent Application Laid-Open No. 49-39607), SiO
255-70 m01%, Al2O37-I3 m0
1%, CaO7~2O m01%, MgO3~l 3m
o1%, ZnO3~13 m01%, K2O or Na
2O0.5~3mol1%, pbQ O~l I m01
%, ZrO□0 to 3 mo1% glass for photoetching masks (Japanese Patent Application Laid-open No. 41736/1983) is known.

しかし、前者のガラスはAl2O3が少なく、一方B2
O3が過多のだめ耐熱性や化学的耐久性ことに耐アルカ
リ性が充分とはいえず、加えて分相し易く乳濁する傾向
があるのでフォトレジストマスク用として満足しうるも
のではなく、また、後者のガラスはCaOを含有するた
め必然的に膨張係数が高くなり、精度の高いパター/は
得られ難いし、また、pboを含有しない場合は液相温
度が高く#触性が劣り、一方PbOの含有量を増加する
に従い著しく紫外線の透過性を劣化させ、さらに、Zr
0z’を含有しない場合は化学的1itI久性に劣シ、
ZrO2の含有量を増加するに従い著しく液相温度を上
昇させ溶融性を悪化させるという問題があった。
However, the former glass has less Al2O3, while B2
If there is too much O3, the heat resistance, chemical durability, and alkali resistance are not sufficient, and in addition, the phase tends to separate easily and become opaque, so it is not satisfactory for use in photoresist masks, and the latter Because glass contains CaO, it inevitably has a high coefficient of expansion, making it difficult to obtain a highly accurate putter.If it does not contain PBO, its liquidus temperature is high and its tactility is poor; As the Zr content increases, the ultraviolet transmittance deteriorates significantly.
If it does not contain 0z', it has poor chemical 1itI durability.
There was a problem in that as the content of ZrO2 was increased, the liquidus temperature was significantly increased and the meltability was deteriorated.

(発明が解決しようとする問題点) 従来組成のガラスは、耐熱性、化学的耐久性、溶融性、
紫外線透過性、膨張係数等のいずれかに問題があってフ
ォトレジストマスク用トシて充分満足しうるものではな
いが、本発明はこれらの条件を満足したガラス組成物を
提供するものである。
(Problems to be solved by the invention) Glass of conventional composition has poor heat resistance, chemical durability, meltability,
Although the glass composition for photoresist masks is not fully satisfactory due to problems in either ultraviolet transmittance or expansion coefficient, the present invention provides a glass composition that satisfies these conditions.

(問題点を解決するだめの手段) 本発明に係るフォトエツチングマスク用として好適な低
膨張ガラスは重量パーセントで、SiO255〜68%
、AI□0315〜24%、82O32〜8%、MgO
3〜l O奸f 3 %、Na2O0〜2% テ<り 
V) 、 カッモル比で(Al2O3+B2O3)/ 
(MgO+ZnO+BaO+Na2O)が0.9〜1.
1の範囲であることを特徴とするものでるる。
(Another Means to Solve the Problem) The low expansion glass suitable for the photoetching mask according to the present invention has a SiO2 content of 55 to 68% by weight.
, AI□0315-24%, 82O32-8%, MgO
3~l O 3%, Na2O0~2% Te<ri
V), in Kamol ratio (Al2O3+B2O3)/
(MgO+ZnO+BaO+Na2O) is 0.9 to 1.
It is characterized by being in the range of 1.

本発明は、まずSiO2−A12O3−RO(二価金属
酸化物ンの共融による比較的液相温度の低い1組成範囲
を基本としたものであシ、さらにB2O3を適度に含有
させることによシ、液相温度をさらに下げ、よって通常
のガラス溶融温度においても充分溶融しうるようにした
ものである。
The present invention is based on SiO2-A12O3-RO (SiO2-A12O3-RO) (a composition range with a relatively low liquidus temperature due to eutectic synthesis of divalent metal oxides), and further contains a suitable amount of B2O3. Second, the liquidus temperature is further lowered so that it can be sufficiently melted even at normal glass melting temperatures.

なお、B2O3、SiO□、Al2O3は低膨張を与え
る成分因子としてよく知られておシ、さら忙二価金属酸
化物としてはMgO1ZnOが低膨張を与えるものとし
て知られているが、caOlPbOは低膨張を得るには
ネガティブに作用するので不適当であり導入を避けるべ
きである。
In addition, B2O3, SiO□, and Al2O3 are well known as component factors that give low expansion, and among divalent metal oxides, MgO1ZnO is known to give low expansion, but caOlPbO has low expansion. Since it has a negative effect, it is inappropriate and should be avoided.

化学的耐久性(耐酸、耐アルカリ性)では概してAm2
O3が優れ、次いでSiO2も比較的優れている。これ
らに次ぐものとして二価金属酸化物においてZnOが侵
れているが、OaO%PbO等は劣るので好ましくない
。なおZrO2は化学的耐久性に極めて優れるが、液相
温度を上昇させ溶融性を著しく困難とするので適当では
ない。
Chemical durability (acid resistance, alkali resistance) is generally Am2
O3 is excellent, followed by SiO2. Next to these, ZnO is eroded among divalent metal oxides, but OaO%PbO and the like are inferior and are not preferred. Although ZrO2 has excellent chemical durability, it is not suitable because it increases the liquidus temperature and makes meltability extremely difficult.

本発明における個々の各成分組成について言及すれば、
SiO2は68wt%(以下wt%を単に係と記載する
。)を超えると粘性が増大しことに清澄性が悪化し、5
5%未満では熱膨張係数が高くなり、失透の晶出速度が
犬となる。A1□o3ば24%?:超えると粘性が増大
し、ことにAl2O3系脈理を発生し易いが、15%未
満では化学的耐久性が劣化する。二価金属酸化物のうち
MgOは熱膨張係数を減少させるのに有効であるが10
%を超えると化学的耐久性、ことに耐酸性を著しく劣化
させ、3%未満では清澄性をも劣化させる。ZnOも比
較的熱膨張係数が低く、また粘性を低下させるのに有効
で!、ことに化学的耐久性にすぐれるので前記MgOの
欠点を補うものであるが、3%未満ではそれらの効果が
小さく、10%を超えると失透の晶出速度を犬にし作業
性を劣化させるので好ましくない。B2O3は溶剤とし
て作用しかつ熱膨張係数を低減させるが8%を越えると
耐熱性や化学的耐久性を劣化させ、3%未満では溶剤と
しての作用が不充分である。
Referring to the individual component compositions of the present invention,
When SiO2 exceeds 68 wt% (hereinafter wt% is simply referred to as "silicon"), the viscosity increases and the clarity deteriorates.
If it is less than 5%, the coefficient of thermal expansion becomes high and the rate of crystallization of devitrification becomes low. A1□o3 24%? If the content exceeds 15%, the viscosity increases and Al2O3 striae are likely to occur, but if the content is less than 15%, the chemical durability deteriorates. Among divalent metal oxides, MgO is effective in reducing the coefficient of thermal expansion, but 10
If it exceeds 3%, chemical durability, especially acid resistance, will be significantly deteriorated, and if it is less than 3%, clarity will also deteriorate. ZnO also has a relatively low coefficient of thermal expansion and is effective in reducing viscosity! In particular, MgO has excellent chemical durability, so it compensates for the disadvantages of MgO, but if it is less than 3%, its effect is small, and if it exceeds 10%, the crystallization rate of devitrification increases and workability deteriorates. This is not desirable because it causes B2O3 acts as a solvent and reduces the coefficient of thermal expansion, but if it exceeds 8%, it deteriorates heat resistance and chemical durability, and if it is less than 3%, its action as a solvent is insufficient.

さらに任意成分としてNano O〜2チ、および/ま
たばBaOO〜3チを硝酸塩あるいは硫醒塩のかたちで
導入すれば泡切れ、均質性に好結果が得られる。なお、
Na2OとBaOを併用する場合前者を1%以下、後者
を1.5%以下とすれば充分である。加えてAs2O3
を全重量に対して0.5%以下添加すれば極めて短時間
で泡切れ効果が得られる。
Furthermore, if NanoO~2H and/or BaOO~3H are introduced as optional components in the form of nitrates or sulfur salts, good results can be obtained in terms of foam removal and homogeneity. In addition,
When Na2O and BaO are used together, it is sufficient to keep the former at 1% or less and the latter at 1.5% or less. In addition, As2O3
If 0.5% or less of the total weight is added, the foam-cutting effect can be obtained in an extremely short period of time.

しかして、本組成範囲のガラスであれば液相温度が11
50℃以下であるので通常のガラス溶融温度、1500
〜1550℃で充分溶融でき、熱膨張係数(25〜b 低いためたとえば集積回路の製作において基板に集積度
の高い/ヤープなパターンを施すことができ、かつ化学
的耐久性に富んでいるため酸、アルカリ等のエツチング
、洗浄に充分耐え、転移温度が700℃前後であって耐
熱性も申し分ない。
Therefore, if the glass has this composition range, the liquidus temperature will be 11
Since it is below 50℃, the normal glass melting temperature is 1500℃.
It can be sufficiently melted at ~1550℃, has a low coefficient of thermal expansion (25~b), and can therefore be used to form highly integrated/large patterns on substrates in the production of integrated circuits. It can withstand etching and cleaning with alkali, etc., and has a transition temperature of around 700°C, so it has excellent heat resistance.

さらに、通常基板へのi光に際してはフォトレジストの
焼付に好適な短波長域の光線ことに紫外線が多用される
。しかるにガラス中のB2O3、Al2O3は乳02に
比べ、若干非架橋酸素を形成する傾向があり、その非架
橋酸素は周知のように紫外線を吸収する性質があるので
好ましくないが、前記したB2O3、Al2O3に対し
アルカリ金属や二価金属の酸化物を均衡して導入するこ
とKよシ非架橋酸素を形成し難くするものと推察され、
結果として紫外線の吸収を低減できる。
Furthermore, when applying i-light to a substrate, ultraviolet rays are often used as light beams in a short wavelength range suitable for printing photoresist. However, B2O3 and Al2O3 in glass tend to form non-bridging oxygen to some extent compared to milk 02, and as is well known, non-bridging oxygen has the property of absorbing ultraviolet rays, which is not preferable. It is presumed that introducing oxides of alkali metals and divalent metals in a balanced manner makes it difficult to form non-bridging oxygen.
As a result, absorption of ultraviolet rays can be reduced.

すなわち(B2O3+Al□03)/(MgO+ZnO
+BaO+Na2O)のモル比を0.9〜1.1とすれ
ば2咽厚ガラスにおける紫外域の透過の下限は22O〜
250−となり、たとえば特開昭58−41736号に
おける280〜300 wn程度に対し紫外線を透過し
易いことが明らかである。
That is, (B2O3+Al□03)/(MgO+ZnO
+BaO+Na2O) if the molar ratio is 0.9 to 1.1, the lower limit of ultraviolet transmission in 2-thickness glass is 22O~
250-, and it is clear that it is easier to transmit ultraviolet rays than, for example, about 280 to 300 wn in JP-A No. 58-41736.

なお、本組成の範囲においてAl2O3/B2O3モル
比が1 に近いと、得られるガラスは分相し易く、した
がって乳濁する傾向にあることが実験的にほぼ明らかと
なった。分相を防ぐためにはAl2O3/B2O3モル
比が1.4以上であることが好ましく、一方Al2O3
/B2O3モル比が8を超えると液相温度が高くなシ溶
融性に弊害を与える。またAl2O3/B2O3モル比
が1.4特にlより小さい場合は化学的耐久性等に悪影
響を与える。
It has been experimentally found that when the Al2O3/B2O3 molar ratio is close to 1 within this composition range, the resulting glass tends to undergo phase separation and therefore tends to become emulsified. In order to prevent phase separation, it is preferable that the Al2O3/B2O3 molar ratio is 1.4 or more;
When the /B2O3 molar ratio exceeds 8, the liquidus temperature will be high, which will have a negative effect on meltability. Furthermore, if the Al2O3/B2O3 molar ratio is smaller than 1.4, especially less than 1, it will adversely affect chemical durability and the like.

(実施例) 以下に本発明を実施例をもとに詳述する。(Example) The present invention will be explained in detail below based on examples.

第1表の/IG、1〜屋8は本発明のガラス組成の例、
煮11〜A I 5は比較例である。うちA+1〜Jf
fi13は本発明のガラス組成範囲から外れた場合を示
し、A l 4は特開昭58−41736号にもとづく
ガラス組成の例であシ、415は特開昭49−3960
7号にもとづくガラス組成のflJである。
/IG, 1 to 8 in Table 1 are examples of glass compositions of the present invention,
Boiled 11 to AI 5 are comparative examples. Of which A+1~Jf
fi13 indicates a case outside the glass composition range of the present invention, A14 is an example of a glass composition based on JP-A-58-41736, and 415 is an example of a glass composition based on JP-A-49-3960.
This is flJ with a glass composition based on No. 7.

ガラスの調製において、ガラス原料はSiO□源として
光学珪砂を、Al2O3源として水酸化アルミニウムを
、B2O3源としてホウ酸を、MgO源として炭酸マグ
ネシウムを、ZnO源として亜鉛華を、BaO源として
硝酸バリウムを、Nano源として硝酸ソーダを用い、
また、いずれも清澄促進剤として亜砒酸を全重量に対し
て0.3%添加した。
In the preparation of glass, glass raw materials include optical silica sand as a SiO□ source, aluminum hydroxide as an Al2O3 source, boric acid as a B2O3 source, magnesium carbonate as an MgO source, zinc white as a ZnO source, and barium nitrate as a BaO source. using sodium nitrate as a Nano source,
In each case, 0.3% of arsenic acid was added to the total weight as a clarifying promoter.

これら原料を目標組成にしたがって秤量し、充分攪拌混
合したうえ白金ルツボに投入し、間接加熱電気炉で15
50℃、4.5時間保持し、次いで炉内放冷してガラス
サンプルを得た。
These raw materials were weighed according to the target composition, thoroughly stirred and mixed, then put into a platinum crucible, and heated in an indirect heating electric furnace for 15 minutes.
It was held at 50° C. for 4.5 hours, and then allowed to cool in the furnace to obtain a glass sample.

得られたガラスの一部を棒状に加工し押棒式線膨張針で
膨張係数(25°〜300℃)および膨張屈曲点からの
転移点を求め第1表に示した。
A part of the obtained glass was processed into a rod shape, and the expansion coefficient (25 DEG to 300 DEG C.) and the transition point from the expansion bending point were determined using a push rod type linear expansion needle and are shown in Table 1.

またガラスの一部を角片状に加工し、電気炉内で110
0℃、1150℃で各3時間保持して後急冷し、それぞ
れの固、液状態を鏡下観察して液相温度範囲を求めた。
In addition, a part of the glass is processed into a square piece and heated to 110 mm in an electric furnace.
The samples were held at 0°C and 1150°C for 3 hours each and then rapidly cooled, and the solid and liquid states of each were observed under a microscope to determine the liquidus temperature range.

第1表中非浸漬度が1100℃以下をA、  1100
〜1150℃を13. 1150℃を超えるものをCで
表示した。
In Table 1, the degree of non-immersion is 1100℃ or less: A, 1100
~1150℃ 13. Temperatures exceeding 1150°C were designated as C.

さらに、2閣厚で両面を平滑研摩した板状ガラスサンプ
ルを作成し分光光度計により分光透過率を測定し紫外域
の透過の下限を求め第1表に示した。
Furthermore, a sheet glass sample was prepared with both surfaces smoothed using a two-sided polishing machine, and its spectral transmittance was measured using a spectrophotometer.The lower limit of transmittance in the ultraviolet region was determined and is shown in Table 1.

同じく上記板状ガラスについて、ガラス表面の約1/2
をロウでマスキングしたうえで、一つは100℃3NH
C1に2時間浸漬して後水洗し、マスキングを剥離して
マスキング部(非浸漬部)に対する侵食部の曇り状態を
目視および鋭下で観察した。他は100℃2NNaOH
に2時間浸漬したものについて上記と同様な手法によシ
観察した。
Similarly, regarding the above plate glass, approximately 1/2 of the glass surface
After masking with wax, one was heated to 100℃3NH.
After immersing in C1 for 2 hours and washing with water, the masking was peeled off and the cloudy state of the eroded area relative to the masked area (non-immersed area) was observed visually and under a microscope. Others are 100℃ 2N NaOH
The specimens immersed in water for 2 hours were observed using the same method as above.

なお第1表中非浸漬部と差異が認められない場合2A、
若干&υが認められる場合をB1曇シが明白なものをC
のランクで表示しだ。
In addition, if there is no difference from the non-immersed part in Table 1, 2A,
B1 for the case where &υ is recognized slightly; C for the case where cloudy is obvious.
It is displayed in rank.

第1表中本発明に係る煮1〜A8のガラスはいずれの測
定結果も均衡したよい値が得られている。比較例All
は熱膨張係数において劣り、A l 2は紫外域の透過
の下限が高く、またIfy、 l 3は分相により若干
の乳濁現象がみられる。
In Table 1, the glasses Nos. 1 to A8 according to the present invention obtained well-balanced and good values in all measurement results. Comparative examples All
is inferior in thermal expansion coefficient, Al2 has a high lower limit of transmission in the ultraviolet region, and Ify and Al3 exhibit a slight emulsion phenomenon due to phase separation.

さらKA15は熱膨張係数、耐アルカリ性、耐熱性にお
いて劣り、A l 4は熱膨張係数において劣り、紫外
域の透過の下限が高い。
Furthermore, KA15 is inferior in thermal expansion coefficient, alkali resistance, and heat resistance, and Al 4 is inferior in thermal expansion coefficient and has a high lower limit of transmission in the ultraviolet region.

(発明の効果) 以上のように本発明のガラスはフォトエツチングマスク
用として低膨張であるので基板に集積度の高いパターン
を施すことができ、化学的耐久性に優れるので酸、アル
カリによるエツチングや洗浄に充分けえ、フォトレジス
トの焼付に好適な紫外線をよく透過し、かつ通常のガラ
ス溶融温度で充分浴融し得るとともに充分な耐熱性を有
するという卓越した効果を奏するものでちる。    
                  6勿論フオトエ
ツチングマスク用に限らず、たとえば自動車のヘッドラ
イト用シールドビーム、水銀灯のパルプ、ジャーやコー
ヒーポット等の耐熱食器、ビーカーやフラスコ等理化学
品、電子レンジ内装品等広い分野にわたり利用しうると
いう利点を有するものである。
(Effects of the Invention) As described above, the glass of the present invention is suitable for photo-etching masks because it has low expansion, so it is possible to form patterns with a high degree of integration on the substrate, and because it has excellent chemical durability, it can withstand etching with acids and alkalis. It exhibits the outstanding effects of being sufficiently resistant to cleaning, transmitting ultraviolet rays suitable for photoresist baking, sufficiently bath melting at ordinary glass melting temperatures, and having sufficient heat resistance.
6 Of course, it can be used not only for photo etching masks, but also for a wide range of fields, such as sealed beams for automobile headlights, pulp for mercury lamps, heat-resistant tableware such as jars and coffee pots, physical and chemical products such as beakers and flasks, and interior parts of microwave ovens. This has the advantage that.

(以下余白)(Margin below)

Claims (1)

【特許請求の範囲】 1)重量パーセントで、SiO_255〜68%、Al
_2O_315〜24%、B_2O_32〜8%、Mg
O3〜10%、ZnO3〜10%、BaO0〜3%、N
a_2O0〜2%であり、かつモル比で(Al_2O_
3+B_2O_3)/(MgO+ZnO+BaO+Na
_2O)が0.9〜1.1の範囲であることを特徴とす
る低膨張ガラス。 2)モル比でAl_2O_3/B_2O_3が1.4〜
8の範囲であることを特徴とする特許請求の範囲第1項
に記載の低膨張ガラス。
[Claims] 1) In weight percent, SiO_255-68%, Al
_2O_315-24%, B_2O_32-8%, Mg
O3~10%, ZnO3~10%, BaO0~3%, N
a_2O 0 to 2%, and the molar ratio (Al_2O_
3+B_2O_3)/(MgO+ZnO+BaO+Na
_2O) is in the range of 0.9 to 1.1. 2) Al_2O_3/B_2O_3 in molar ratio is 1.4~
8. The low expansion glass according to claim 1, wherein the low expansion glass is in the range of 8.
JP59172435A 1984-08-21 1984-08-21 Low expansion glass Granted JPS6153130A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59172435A JPS6153130A (en) 1984-08-21 1984-08-21 Low expansion glass

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59172435A JPS6153130A (en) 1984-08-21 1984-08-21 Low expansion glass

Publications (2)

Publication Number Publication Date
JPS6153130A true JPS6153130A (en) 1986-03-17
JPH0146460B2 JPH0146460B2 (en) 1989-10-09

Family

ID=15941925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59172435A Granted JPS6153130A (en) 1984-08-21 1984-08-21 Low expansion glass

Country Status (1)

Country Link
JP (1) JPS6153130A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04330711A (en) * 1991-01-31 1992-11-18 Hoya Corp Material for x-ray mask
JPH05506822A (en) * 1990-03-09 1993-10-07 ルボレ マテリアルズ スウェーデン アクチボラグ How to make a web for manufacturing gaskets
EP1090888A1 (en) * 1999-10-08 2001-04-11 Kabushiki Kaisha Ohara Transparent glass and a method for manufacturing the same
JP2015231945A (en) * 2009-08-21 2015-12-24 コーニング インコーポレイテッド Glass having crack and scratch resistance and enclosure manufactured form the same
WO2016088778A1 (en) * 2014-12-02 2016-06-09 旭硝子株式会社 Glass plate and heater using same
CN110818250A (en) * 2019-12-24 2020-02-21 成都光明光电股份有限公司 Optical glass

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05506822A (en) * 1990-03-09 1993-10-07 ルボレ マテリアルズ スウェーデン アクチボラグ How to make a web for manufacturing gaskets
JPH04330711A (en) * 1991-01-31 1992-11-18 Hoya Corp Material for x-ray mask
EP1090888A1 (en) * 1999-10-08 2001-04-11 Kabushiki Kaisha Ohara Transparent glass and a method for manufacturing the same
US6521557B1 (en) 1999-10-08 2003-02-18 Kabushiki Kaisha Ohara Transparent glass and a method for manufacturing the same
JP2015231945A (en) * 2009-08-21 2015-12-24 コーニング インコーポレイテッド Glass having crack and scratch resistance and enclosure manufactured form the same
USRE47837E1 (en) 2009-08-21 2020-02-04 Corning Incorporated Crack and scratch resistant glass and enclosures made therefrom
USRE49530E1 (en) 2009-08-21 2023-05-16 Corning Incorporated Crack and scratch resistant glass and enclosures made therefrom
WO2016088778A1 (en) * 2014-12-02 2016-06-09 旭硝子株式会社 Glass plate and heater using same
CN107001115A (en) * 2014-12-02 2017-08-01 旭硝子株式会社 Glass plate and use its heater
CN110818250A (en) * 2019-12-24 2020-02-21 成都光明光电股份有限公司 Optical glass

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