JPS6149945U - - Google Patents
Info
- Publication number
- JPS6149945U JPS6149945U JP13415984U JP13415984U JPS6149945U JP S6149945 U JPS6149945 U JP S6149945U JP 13415984 U JP13415984 U JP 13415984U JP 13415984 U JP13415984 U JP 13415984U JP S6149945 U JPS6149945 U JP S6149945U
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- load
- power element
- shape memory
- memory alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910001285 shape-memory alloy Inorganic materials 0.000 claims description 4
- 230000005856 abnormality Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000011084 recovery Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 235000014676 Phragmites communis Nutrition 0.000 description 1
Landscapes
- Electronic Switches (AREA)
- Breakers (AREA)
- Thermally Actuated Switches (AREA)
- Switches That Are Operated By Magnetic Or Electric Fields (AREA)
Description
第1図は、本考案の好適な第1実施例の電気回
路図である。第2図は、第1図に示す第1実施例
をユニツト化した例の説明図である。第3図は本
考案の好適な第2実施例の電気回路図である。
1……半導体パワー素子、2……形状記憶合金
で形成した可動片、3……レバー、4……負荷、
34……摺動抵抗、36……マグネツト、37…
…リードスイツチ、38……バイアススプリング
、53……保持回路。
FIG. 1 is an electrical circuit diagram of a first preferred embodiment of the present invention. FIG. 2 is an explanatory diagram of an example in which the first embodiment shown in FIG. 1 is made into a unit. FIG. 3 is an electrical circuit diagram of a second preferred embodiment of the present invention. 1...Semiconductor power element, 2...Movable piece formed of shape memory alloy, 3...Lever, 4...Load,
34...Sliding resistance, 36...Magnet, 37...
...Reed switch, 38...Bias spring, 53...Holding circuit.
Claims (1)
をしや断する回路しや断器において、電源から負
荷にいたる負荷回路中に接続された半導体パワー
素子と、前記負荷回路中に介設された形状記憶合
金で形成した可動片と、負荷回路に過電流通電時
前記形状記憶合金で形成した可動片の自己発熱に
よる塑性ひずみ復元運動によつて半導体パワー素
子をオフ作用すべく接続された半導体パワー素子
制御手段とを備えてなる形状記憶合金で形成した
可動片を用いた回路しや断器。 In circuit breakers and disconnectors that cut off a circuit in order to protect the circuit when an abnormality such as a load short circuit occurs, a semiconductor power element connected in a load circuit from a power supply to a load, and a semiconductor power element interposed in the load circuit are used. a movable piece made of a shape memory alloy, and a semiconductor connected to turn off a semiconductor power element by plastic strain recovery movement due to self-heating of the movable piece made of the shape memory alloy when an overcurrent is applied to a load circuit; A circuit breaker using a movable piece made of a shape memory alloy and comprising a power element control means.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13415984U JPS6149945U (en) | 1984-09-04 | 1984-09-04 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13415984U JPS6149945U (en) | 1984-09-04 | 1984-09-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6149945U true JPS6149945U (en) | 1986-04-03 |
Family
ID=30692679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13415984U Pending JPS6149945U (en) | 1984-09-04 | 1984-09-04 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6149945U (en) |
-
1984
- 1984-09-04 JP JP13415984U patent/JPS6149945U/ja active Pending
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