JPS6149831B2 - - Google Patents
Info
- Publication number
- JPS6149831B2 JPS6149831B2 JP11854276A JP11854276A JPS6149831B2 JP S6149831 B2 JPS6149831 B2 JP S6149831B2 JP 11854276 A JP11854276 A JP 11854276A JP 11854276 A JP11854276 A JP 11854276A JP S6149831 B2 JPS6149831 B2 JP S6149831B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- oxide layer
- weight
- present
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 31
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 238000009413 insulation Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Description
本発明は、たとえば集積回路装置などの半導体
装置や基板上に抵抗要素を形成した感熱基板など
種々の電気要素、回路要素を形成載置するための
電気装置用基板の改良に関する。
従来、この種の基板にはセラミツクが主として
使用されてきた。その最大の理由は絶縁性にすぐ
れている点である。
しかし、セラミツク基板は機械的強度、特に抗
折力が弱く、また平担度を必要とするこの種基板
においては焼成後研磨加工を施すのが通常であ
る。このため、金属基板の使用が考えられる。
本発明はたとえば第１図に示されるように金属
基体１として、クロム10〜30重量％、アルミニウ
ム0.05〜７重量％、チタン0.1〜５重量％、残部
実質的に鉄よりなる合金を使用し、絶縁性付与の
ため該合金基体表面に前記合金の酸化層２を形成
してなるものである。
本発明基板の基体を形成する合金は加工性にす
ぐれているので様々な形状に対応できる。さらに
熱伝導性にすぐれているので大規模な集積回路な
どの熱放散性を要求される分野での使用に好適す
る。この熱伝導性の良好な点は基体合金層、酸化
層のそれぞれの厚さを選択することによつて熱放
散性を調節することができることを意味し、した
がつて容易に任意の熱的特性をもつた基板を製造
できる。本発明基板の基体合金は耐食性及び耐熱
性にすぐれているので電気装置の製造、使用等に
おける各種の環境に耐えることができる。たとえ
ば使用温度は400℃以上にても可能であり、酸洗
等の処理もできる。
また、本発明基板の基体合金はろう付性、溶接
性にもすぐれているので電気装置の組立てに都合
がよい。さらに機械的強度も良いので、基板基体
として好適である。
本発明基板に使用する基体合金のクロム及びニ
ツケルの含有量は上述の本発明の各種特徴を保つ
ための必要量から決定される。
本発明基板の基体表面酸化層は合金をたとえば
大気中、湿潤水素雰囲気中などの含酸素雰囲気で
高温酸化することにより形成するのが好ましい。
この具体的条件は次の第１表に示す。
The present invention relates to improvements in substrates for electrical devices on which various electrical elements and circuit elements are formed and mounted, such as semiconductor devices such as integrated circuit devices and heat-sensitive substrates having resistive elements formed on the substrate. Conventionally, ceramics have been mainly used for this type of substrate. The biggest reason for this is its excellent insulation properties. However, ceramic substrates have low mechanical strength, particularly transverse rupture strength, and in this type of substrates that require flatness, it is common to perform polishing after firing. For this reason, it is possible to use a metal substrate. For example, as shown in FIG. 1, the present invention uses an alloy consisting of 10 to 30% by weight of chromium, 0.05 to 7% by weight of aluminum, 0.1 to 5% by weight of titanium, and the remainder substantially iron, as shown in FIG. An oxide layer 2 of the alloy is formed on the surface of the alloy substrate to provide insulation. The alloy forming the base of the substrate of the present invention has excellent workability and can be formed into various shapes. Furthermore, since it has excellent thermal conductivity, it is suitable for use in fields that require heat dissipation such as large-scale integrated circuits. This good thermal conductivity means that the heat dissipation properties can be adjusted by selecting the respective thicknesses of the base alloy layer and the oxide layer, and therefore it is easy to adjust the thermal properties to any desired value. It is possible to manufacture substrates with Since the base alloy of the substrate of the present invention has excellent corrosion resistance and heat resistance, it can withstand various environments in the manufacture and use of electrical devices. For example, it can be used at a temperature of 400°C or higher, and treatments such as pickling are also possible. Furthermore, the base alloy of the substrate of the present invention has excellent brazing and welding properties, making it convenient for assembling electrical devices. Furthermore, since it has good mechanical strength, it is suitable as a substrate substrate. The contents of chromium and nickel in the base alloy used in the substrate of the present invention are determined from the amounts necessary to maintain the various features of the present invention described above. The oxidized layer on the surface of the substrate of the present invention is preferably formed by oxidizing the alloy at high temperature in an oxygen-containing atmosphere such as air or a humid hydrogen atmosphere.
The specific conditions are shown in Table 1 below.
【表】
酸化層はCr2O3及びAl2O3を主体とするもの
で、その比抵抗は大きく、ち密である。したがつ
てすぐれた絶縁性を示す。
たとえば酸化層の比抵抗は108〜1010Ωcmに調
整することができ、密度は真比重の70％以上さら
には80％以上にまで調整できる。
この酸化層の厚さは0.005mm以上好ましくは
0.01〜0.5mmにするとよい。この程度の厚さであ
れば電気装置用の基板として十分な絶縁性が得ら
れるとともに、金属基板としての特異性、例えば
熱伝導性を有利に利用できる。
この酸化層の表面粗度は平坦である程望ましい
が、表面粗さ３μ以下程度であれば使用可能であ
ろう。１μ以下ならば最も好ましい。
本発明基板のさらに特異な点はアルミニウムの
一部及びチタンの多くは基体内部酸化され、酸化
層と基体との付着強度を強固にする点にある。こ
のため、本発明基板は酸化層と基体との間での剥
離の可能性が無く、取扱いが容易である。
本発明基板の応用として多層化ができる。たと
えば、第２図において、３は金属層、４が酸化層
である。
基体合金の組成限定理由は次のとおりである。
クロムは本発明の前記特徴を維持するために必要
なものであり、10〜30重量％、とする。
アルミニウムはAl2O3なる良好な酸化物を得る
ために必要であり、また一部が内部酸化されて基
体と酸化層の付着を強固にする。
この効果を得るにはアルミニウム量を0.05〜７
重量％にする。
チタンは内部酸化されて基体と酸化層の付着を
より強固にするために必要である。この効果を得
るには0.1〜５重量％とする。
また、上記の各成分元素のさらに好ましい範囲
を次の第２表に示す。[Table] The oxide layer is mainly composed of Cr 2 O 3 and Al 2 O 3 , has a high specific resistance, and is dense. Therefore, it exhibits excellent insulation properties. For example, the specific resistance of the oxide layer can be adjusted to 10 8 to 10 10 Ωcm, and the density can be adjusted to 70% or more of the true specific gravity, or even 80% or more. The thickness of this oxide layer is preferably 0.005 mm or more.
It is best to set it to 0.01~0.5mm. With a thickness of this level, sufficient insulation properties can be obtained as a substrate for an electrical device, and the unique properties of a metal substrate, such as thermal conductivity, can be advantageously utilized. It is desirable that the surface roughness of this oxide layer is as flat as possible, but it may be usable if the surface roughness is about 3 μm or less. It is most preferable if it is 1μ or less. A further unique feature of the substrate of the present invention is that a portion of the aluminum and most of the titanium are oxidized inside the substrate, thereby strengthening the adhesion strength between the oxide layer and the substrate. Therefore, the substrate of the present invention has no possibility of peeling between the oxide layer and the base, and is easy to handle. As an application of the substrate of the present invention, it can be multilayered. For example, in FIG. 2, 3 is a metal layer and 4 is an oxide layer. The reason for limiting the composition of the base alloy is as follows.
Chromium is necessary to maintain the above-mentioned characteristics of the present invention, and is 10 to 30% by weight. Aluminum is necessary to obtain a good oxide, Al 2 O 3 , and a portion is internally oxidized to strengthen the adhesion between the substrate and the oxide layer. To obtain this effect, increase the amount of aluminum from 0.05 to 7.
Convert to weight%. The titanium is required to be internally oxidized to provide stronger adhesion between the substrate and the oxide layer. To obtain this effect, the amount should be 0.1 to 5% by weight. Further, more preferable ranges of each of the above component elements are shown in Table 2 below.
【表】
たとえば16Cr−Fe系合金、18Cr−Fe系合金及
びこれらにAl、Tiを含有するものは最良であ
る。
実施例
クロム18重量％、アルミニウム1.5重量％、チ
タン0.8重量％、残部鉄よりなる合金を基体と
し、この基体を湿潤水素雰囲気中で1250℃にて３
時間処理して基体表面に酸化層を形成した。得ら
れた酸化層はCr2O3及びAl2O3を主体とする絶縁
性にすぐれた密度高いものであつた。
また、アルミニウムとチタンが内部酸化されて
いて、基体と酸化層との間は強固に付着してい
た。このようにして得た基板は熱伝導性も適当
で、電気装置用として好適であつた。[Table] For example, 16Cr-Fe alloys, 18Cr-Fe alloys, and those containing Al and Ti are best. Example An alloy consisting of 18% by weight of chromium, 1.5% by weight of aluminum, 0.8% by weight of titanium, and the balance iron was used as a base, and this base was heated at 1250°C in a humid hydrogen atmosphere for 30 minutes.
An oxidized layer was formed on the surface of the substrate by time treatment. The obtained oxide layer was composed mainly of Cr 2 O 3 and Al 2 O 3 and had excellent insulation properties and a high density. Furthermore, the aluminum and titanium were internally oxidized, and there was strong adhesion between the substrate and the oxide layer. The substrate thus obtained had appropriate thermal conductivity and was suitable for use in electrical devices.
第１図及び第２図は本発明電気装置用基板の断
面図である。
１……基体、２，４……酸化層、３……金属
層。
1 and 2 are cross-sectional views of a substrate for an electrical device according to the present invention. 1... Base body, 2, 4... Oxide layer, 3... Metal layer.
Claims (1)
重量％、チタン0.1〜５重量％、残部実質的に鉄
からなる合金で形成された基体及び該基体表面に
高温酸化により形成されたCr2O3及びAl2O3を主
体とする前記合金酸化層とを具備してなる電気装
置用基板。1 Chromium 10-30% by weight, aluminum 0.05-7
% by weight, 0.1 to 5% by weight of titanium, the balance being substantially iron; and the oxidation of the alloy mainly consisting of Cr 2 O 3 and Al 2 O 3 formed on the surface of the substrate by high temperature oxidation. A substrate for an electrical device comprising a layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11854276A JPS5344870A (en) | 1976-10-04 | 1976-10-04 | Electric device substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11854276A JPS5344870A (en) | 1976-10-04 | 1976-10-04 | Electric device substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5344870A JPS5344870A (en) | 1978-04-22 |
| JPS6149831B2 true JPS6149831B2 (en) | 1986-10-31 |
Family
ID=14739158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11854276A Granted JPS5344870A (en) | 1976-10-04 | 1976-10-04 | Electric device substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5344870A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07163666A (en) * | 1993-12-16 | 1995-06-27 | Terumo Corp | Connector |
| KR102638297B1 (en) | 2016-09-23 | 2024-02-20 | 삼성디스플레이 주식회사 | Manufacturing method and apparatus for a display device |
| KR102529080B1 (en) | 2016-10-05 | 2023-05-09 | 삼성디스플레이 주식회사 | Laminating apparatus and laminating method using the same |
-
1976
- 1976-10-04 JP JP11854276A patent/JPS5344870A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5344870A (en) | 1978-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS62294147A (en) | Alloy heat sink | |
| JPS62207789A (en) | Surface structure for aluminum nitride material and manufacture | |
| JPS5811390B2 (en) | Method of manufacturing thermally conductive substrate | |
| JPS6149829B2 (en) | ||
| JPS6149831B2 (en) | ||
| JPS5917877B2 (en) | Board for electrical equipment | |
| JPS60170287A (en) | Copper-lined laminated board | |
| JPS6149830B2 (en) | ||
| JPS5917879B2 (en) | Board for electrical equipment | |
| JPS5917878B2 (en) | Board for electrical equipment | |
| JPS6149834B2 (en) | ||
| JPS6149827B2 (en) | ||
| JPS6149835B2 (en) | ||
| JPH04255254A (en) | Metal board | |
| JPS6149833B2 (en) | ||
| JPS6149832B2 (en) | ||
| JPS6149828B2 (en) | ||
| JPH0424312B2 (en) | ||
| JPS5917880B2 (en) | Board for electrical equipment | |
| EP0264121A2 (en) | Aluminum enamel board | |
| JPS63261732A (en) | Surface mounting board | |
| JP2019182667A (en) | Metal/ceramic conjugate | |
| JP2544076B2 (en) | Ceramic heating container | |
| JPS6219264B2 (en) | ||
| JP5346408B2 (en) | Metal foil provided with electric resistance film and method for manufacturing the same |