JPS6149429A - Manufacture of resin-sealed semiconductor device - Google Patents
Manufacture of resin-sealed semiconductor deviceInfo
- Publication number
- JPS6149429A JPS6149429A JP17189284A JP17189284A JPS6149429A JP S6149429 A JPS6149429 A JP S6149429A JP 17189284 A JP17189284 A JP 17189284A JP 17189284 A JP17189284 A JP 17189284A JP S6149429 A JPS6149429 A JP S6149429A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- layer
- semiconductor device
- sealed
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229920005989 resin Polymers 0.000 claims abstract description 30
- 239000011347 resin Substances 0.000 claims abstract description 30
- 238000000465 moulding Methods 0.000 claims abstract description 15
- 230000001681 protective effect Effects 0.000 claims abstract 2
- 238000007789 sealing Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 abstract description 11
- 230000005496 eutectics Effects 0.000 abstract description 9
- 238000005476 soldering Methods 0.000 abstract description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000000758 substrate Substances 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 239000006082 mold release agent Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 2
- 235000010919 Copernicia prunifera Nutrition 0.000 description 1
- 244000180278 Copernicia prunifera Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、品質を損うことなく、製造コストの低減をは
かることができる樹脂封止形半導体装置の製造方法に関
する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing a resin-sealed semiconductor device that can reduce manufacturing costs without impairing quality.
従来例の構成とその問題点
樹脂封止形半導体装置において、リードフレーム上の半
導体素子（チップ）を成形用樹脂で封止し、成形構体外
の部分を素子の放熱、アウターリードにより半田付けそ
の他により取シ付けられ使用されている。Conventional structure and its problems In a resin-molded semiconductor device, the semiconductor element (chip) on the lead frame is sealed with molding resin, and the parts outside the molded structure are used for heat dissipation of the element, soldering using outer leads, etc. It is installed and used by
第１図ａ −ｄは、かかる従来の樹脂形半導体装置の構
造を示す断面図であり、銅などの熱伝導が良好な素材か
らなるリードフレームの基板支持部１の所定位置に半導
体素子２を接着し、この半導体素子の電極と外部リード
との間を金属細線で接続しく図示せず）、さらに成形樹
脂３で封止した構造になっている。なお、図中４は基板
支持体部から外部へ導出される外部リード、６は成形用
樹脂３を貫通する取ｐ付は用の孔である。FIGS. 1a to 1d are cross-sectional views showing the structure of such a conventional resin-type semiconductor device, in which a semiconductor element 2 is placed at a predetermined position on a substrate support portion 1 of a lead frame made of a material with good thermal conductivity such as copper. The structure is such that the electrodes of the semiconductor element and the external leads are connected by thin metal wires (not shown), and further sealed with molded resin 3. In the figure, 4 is an external lead led out from the substrate support portion, and 6 is a hole for mounting that penetrates the molding resin 3.
ところで、このように構成される従来の樹脂封止形半導
体装置のリードフレームには、通常、ニッケルのメッキ
が施されており、さらに、成形用樹脂３の外部へ導出さ
れる部分には、半田付けを容易にするだめの共晶半田層
が形成されている。Incidentally, the lead frame of the conventional resin-sealed semiconductor device configured as described above is usually plated with nickel, and furthermore, the portion led out of the molding resin 3 is coated with solder. A secondary eutectic solder layer is formed to facilitate attachment.
第１図すは基板支持部１の一部を拡大して示しだ断面図
であシ表裏両面には２〜４μｍ程度のニッケルめっき層
６が形成されている。第１図Ｃは外部へ導出される外部
リードの一部を拡大して示した断面図であシ、ニッケル
めっき層６の上に成形用樹脂３で封止した場合、封止用
金型（図示せず）より洩れた樹脂７が樹脂層としてニッ
ケルめっき層６の面上に形成されている。このような樹
脂層７があると第１図ｄで示めす外部リード４上に共晶
半田層を形成できず、通常樹脂パリ取り機で除去してい
るが不完全々場合共晶半田層が形成困難となり半導体装
置の取付けに不具合を生じる。なお、近年成形用樹脂は
エポキシ樹脂が使用される様になシバリ取シが非常にむ
ずかしくなっている。FIG. 1 is an enlarged cross-sectional view of a part of the substrate support portion 1, and a nickel plating layer 6 of about 2 to 4 μm in thickness is formed on both the front and back surfaces. FIG. 1C is an enlarged cross-sectional view of a part of the external lead led out to the outside. The resin 7 leaked from the nickel plated layer 6 (not shown) is formed as a resin layer on the surface of the nickel plating layer 6. If such a resin layer 7 exists, a eutectic solder layer cannot be formed on the external lead 4 shown in FIG. This makes formation difficult and causes problems in mounting the semiconductor device. In addition, in recent years, as epoxy resins have been used as molding resins, it has become extremely difficult to remove burrs.
第１図ｄは前述の第１図Ｃで説明した樹脂層７をパリ取
シ後共晶半田層８を外部リード４上に形成した完成品の
状態である。FIG. 1D shows a completed product in which a eutectic solder layer 8 is formed on the external lead 4 after the resin layer 7 described in FIG. 1C is deburred.
発明の目的
本発明の目的は外部リード面に封止時の成形用樹脂層の
付着を弱くしてパリ取シ作業を容易に［７合せて共晶半
田付は作業を簡単になし、併せて品質の向上をはかるこ
とにある。Purpose of the Invention The purpose of the present invention is to weaken the adhesion of the molding resin layer to the external lead surface during sealing, thereby facilitating the deburring work. The aim is to improve quality.
発明の構成
本発明の樹脂封止形半導体装置の製造方法は、ｆ
ＩＪ−ドフレームの基板支持部上に半導体
素子基板を接着するとともに、同半導体素子基板上の電
極と外部リードとの間を金属細線で接続して構成しだ半
導体素子組立構体を成形用樹脂で封止する直前に、成形
用樹脂構体外部にある部分のみ離形剤を塗布した後前記
封止作業をする。かかる離形剤の層上に金形より洩れた
樹脂は、プラッタ等で簡単に除去でき、その後の共晶半
田めっき層の形成はきわめて容易になしうる。Structure of the Invention The method for manufacturing a resin-sealed semiconductor device of the present invention includes f
A semiconductor element substrate is bonded onto the substrate support part of the IJ-board frame, and the electrodes on the semiconductor element substrate and external leads are connected using thin metal wires.The semiconductor element assembly structure is constructed using molding resin. Immediately before sealing, a mold release agent is applied only to the portion outside the molding resin structure, and then the sealing operation is performed. The resin leaking from the mold onto the mold release agent layer can be easily removed with a platter or the like, and the subsequent formation of the eutectic solder plating layer can be done very easily.
実施例の説明
以下に第２図ａ〜ｄを謬照して、本発明の樹脂封止形半
導体装置の製造方法について詳しく説明する。第２図ａ
は、本発明の製造方法で形成した樹脂封止形半導体装置
の断面構造を示す図であり基本構造は第１図ａで示した
従来のものと同じである。すなわち、リードフレームの
基板支持体部１に半導体素子２を接着し、さらに半導体
素子の電極と外部リードとの間を金属細線で接続して形
成した組立構体を成形用樹脂３で封止した構造になって
いる。４および５も第１図のそれと同じ外部リードおよ
び取り付は用孔である。DESCRIPTION OF EMBODIMENTS The method for manufacturing a resin-sealed semiconductor device of the present invention will be described in detail below with reference to FIGS. 2a to 2d. Figure 2a
1 is a diagram showing a cross-sectional structure of a resin-sealed semiconductor device formed by the manufacturing method of the present invention, and the basic structure is the same as the conventional device shown in FIG. 1a. That is, a structure in which a semiconductor element 2 is bonded to a substrate support part 1 of a lead frame, and an assembled structure is formed by connecting electrodes of the semiconductor element and external leads with thin metal wires is sealed with a molding resin 3. It has become. 4 and 5 also have the same external leads and mounting holes as those in FIG.
ところで、本発明の製造方法では、リードフレームの成
形用樹脂で封止した成形体より外部に導出される部分、
外部リード部４０面に、例えばカルナバ、ワックス等の
離形剤で層９を形成し、しかる後成形用樹脂３で封止す
る。金型より洩れた樹脂は離形剤で形成された層９の上
に形成されるが、ブラソフ等で簡単に除去され、次の工
程で第２図ｄに示すようにニッケルめつき６の上面に共
晶半田層８を容易に形成させることができる。この場合
金型から洩れた樹脂が一部でも残っていると十分な半田
めっき層の形成が困難となる。故に上述の離形剤で形成
されている層る形成後封止をした場合は、洩れた樹脂の
除去も簡単であり、共晶半田層の形成も容易にして品質
のよい半導体装置を製造することが可能になる。By the way, in the manufacturing method of the present invention, the portion led out from the molded body sealed with the molding resin of the lead frame,
A layer 9 is formed on the surface of the external lead portion 40 using a mold release agent such as carnauba or wax, and then sealed with a molding resin 3. The resin leaking from the mold is formed on the layer 9 formed with the mold release agent, but it is easily removed with a Brasov etc., and in the next step the upper surface of the nickel plating 6 is coated as shown in Figure 2d. The eutectic solder layer 8 can be easily formed. In this case, if even a portion of the resin leaked from the mold remains, it becomes difficult to form a sufficient solder plating layer. Therefore, if the above-mentioned mold release agent is used to seal the layer after forming it, it is easy to remove the leaked resin, and it is also easy to form the eutectic solder layer, making it possible to manufacture high-quality semiconductor devices. becomes possible.
発明の効果
以上の説明から明らかなように、本発明の製造方法は、
従来必要とされていだ封止工程で洩れだ樹脂層の除去が
簡単に確実にでき、次工程の共晶半田層の形成が確実で
品質の高い半導体装置の製造が可能となる。Effects of the Invention As is clear from the above explanation, the manufacturing method of the present invention has the following effects:
The leaking resin layer can be easily and reliably removed during the conventional sealing process, and the next process, the eutectic solder layer, can be reliably formed, making it possible to manufacture high-quality semiconductor devices.
れた樹脂封止形半導体装置の構造を示す断面図である。
１・・・ 基板支持部、２・・・・・半導体素子、３・
・・・・成形用樹脂、４ ・・・・外部リード、５・・
・取付は用孔、６・・・・・ニッケルめっき、７・・・
・・洩れた樹脂層、８ ・・・共晶半田層、９・・・・
・離形剤層。FIG. 2 is a cross-sectional view showing the structure of a resin-sealed semiconductor device. DESCRIPTION OF SYMBOLS 1... Substrate support part, 2... Semiconductor element, 3...
...Molding resin, 4 ...External lead, 5...
・Mounting holes, 6...Nickel plating, 7...
...Leaked resin layer, 8 ...Eutectic solder layer, 9...
・Release agent layer.
Claims (1)
形用樹脂の成形体より露出する金属部分に離形剤で保護
膜を形成したる後、封止することを特徴とする樹脂封止
形半導体装置の製造方法。Immediately before sealing a semiconductor element assembly structure with a molding resin, a protective film is formed with a release agent on the metal portion exposed from the molded body of the same molding resin, and then the resin sealing is performed. A method for manufacturing a shaped semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17189284A JPS6149429A (en) | 1984-08-17 | 1984-08-17 | Manufacture of resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17189284A JPS6149429A (en) | 1984-08-17 | 1984-08-17 | Manufacture of resin-sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6149429A true JPS6149429A (en) | 1986-03-11 |
Family
ID=15931738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17189284A Pending JPS6149429A (en) | 1984-08-17 | 1984-08-17 | Manufacture of resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6149429A (en) |
-
1984
- 1984-08-17 JP JP17189284A patent/JPS6149429A/en active Pending
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