JPS6145836B2 - - Google Patents

Info

Publication number
JPS6145836B2
JPS6145836B2 JP2447278A JP2447278A JPS6145836B2 JP S6145836 B2 JPS6145836 B2 JP S6145836B2 JP 2447278 A JP2447278 A JP 2447278A JP 2447278 A JP2447278 A JP 2447278A JP S6145836 B2 JPS6145836 B2 JP S6145836B2
Authority
JP
Japan
Prior art keywords
display element
sensor
switch
display
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2447278A
Other languages
Japanese (ja)
Other versions
JPS54117696A (en
Inventor
Katsuyuki Tanaka
Masakatsu Saito
Shinichi Oohashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2447278A priority Critical patent/JPS54117696A/en
Publication of JPS54117696A publication Critical patent/JPS54117696A/en
Publication of JPS6145836B2 publication Critical patent/JPS6145836B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3668Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
    • C03C17/3671Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use as electrodes
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/30Aspects of methods for coating glass not covered above
    • C03C2218/32After-treatment
    • C03C2218/328Partly or completely removing a coating
    • C03C2218/33Partly or completely removing a coating by etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electronic Switches (AREA)
  • Illuminated Signs And Luminous Advertising (AREA)
  • Switches That Are Operated By Magnetic Or Electric Fields (AREA)

Description

【発明の詳細な説明】 本発明は家庭電気製品などに用いられる表示素
子に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to display elements used in home appliances and the like.

家庭電気製品においても、最近では電子化が急
速に進み、機器の動作モード表示等として表示素
子に対する要求が高まつている。従来より、表示
素子は各種出されており、以下これらを説明す
る。第1図は押ボタンスイツチで、そのボタン頭
部が発光する機能をもつたものであり、第1図a
は正面図、第1図bは側面図である。図において
押ボタン1を押し込むことによりスイツチ本体2
はオンあるいはオフになるが、この動作に連動し
て発光ダイオード3(あるいは白熱灯)が点灯す
る。そして、発光ダイオード3から出た光は、押
ボタン1を構成している透明プラスチツク内を通
過して押ボタン1の前面より放射し、あたかも頭
部が発光しているかのように見える。しかし、こ
のような構造を有する表示装置付き押ボタンスイ
ツチは、構造が複雑であり、また発光部を大面積
にすることが難しくかつ奥行が深くなり、またパ
ネルに取り付けるには取付穴が必要となつて、同
一平面内に多くは取り付けにくい等の欠点があ
る。これらの欠点の一部を改善したものとして、
第2図に示す静電容量変化検出型のセンサを有す
る表示装置付きスイツチがある。第2図におい
て、5は表示部を兼ねたセンサパネルで、このセ
ンサパネル5と例えば接地面との間の容量変化
(人間がセンサパネルに接触することによる容量
変化)を検出回路7で検出し、その出力信号でス
イツチ8をオン・オフすることにより白熱灯6
(あるいは発光ダイオード)を点滅するものであ
る。しかし、この構造を有する表示装置付きスイ
ツチでも、大面積の表示は難かしく、また実装の
点からも白熱灯あるいは発光ダイオードの取り付
けが必要となり、また奥行も深くなる欠点があ
る。
2. Description of the Related Art Recently, computerization of household electrical appliances has rapidly progressed, and there has been an increasing demand for display elements to display operating modes of appliances. Conventionally, various display elements have been produced, and these will be explained below. Figure 1 shows a push button switch whose button head has the function of emitting light.
is a front view, and FIG. 1b is a side view. In the figure, by pushing the push button 1, the switch body 2 is
is turned on or off, and in conjunction with this operation, the light emitting diode 3 (or incandescent lamp) lights up. The light emitted from the light emitting diode 3 passes through the transparent plastic that constitutes the push button 1 and is emitted from the front surface of the push button 1, making it appear as if the head is emitting light. However, a push button switch with a display device having such a structure has a complicated structure, it is difficult to make the light emitting part large and the depth is deep, and a mounting hole is required to attach it to a panel. However, many of them have drawbacks such as difficulty in mounting them on the same plane. As a solution to some of these shortcomings,
There is a switch with a display device having a capacitance change detection type sensor shown in FIG. In FIG. 2, 5 is a sensor panel that also serves as a display section, and a detection circuit 7 detects a capacitance change between this sensor panel 5 and, for example, a ground plane (a capacitance change due to a person touching the sensor panel). , by turning on and off the switch 8 with the output signal, the incandescent lamp 6 is turned on.
(or a light emitting diode) that blinks. However, even with a switch with a display device having this structure, it is difficult to display a large area, and from a mounting point of view, it is necessary to attach an incandescent lamp or a light emitting diode, and there are disadvantages that the switch is deep.

本発明の目的は、上記した従来技術の欠点をな
くし、薄型で実装の容易な表示装置付きスイツチ
を提供するにある。この目的を達成するため、本
発明は、薄型の発光素子の対向設置された電極を
容量検出等のセンサとして使用してスイツチセン
サ内蔵表示素子とすることを要点とするもので、
これにより表示装置付き薄型スイツチ素子を得る
ことができる。このように、発光素子を構成する
基板の第1主面側の透明電極をセンサ電極として
用いることにより、容量変化等の検出用のセンサ
電極を表示素子と別個に設ける必要がなく、発光
部そのものにスイツチセンサを内蔵した表示を実
現できる。
SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned drawbacks of the prior art and to provide a switch with a display device that is thin and easy to implement. In order to achieve this object, the main point of the present invention is to use electrodes of a thin light emitting element placed opposite each other as a sensor for capacitance detection, etc., to create a display element with a built-in switch sensor.
As a result, a thin switch element with a display device can be obtained. In this way, by using the transparent electrode on the first main surface side of the substrate constituting the light emitting element as the sensor electrode, there is no need to provide a sensor electrode for detecting changes in capacitance etc. separately from the display element, and the light emitting part itself A display with a built-in switch sensor can be realized.

また、本構成によれば、センサ電極は発光素子
形成時におのずから表示パネル裏面に形成される
ことから、パネル両面への透明電極の形成および
パネル前面から裏面への接続等が不要となり、製
造工程が簡略化され、信頼性が向上する。さら
に、パネルの汚れ、電極の酸化や欠損等に伴う誤
動作の発生のない高信頼性のスイツチセンサを構
成できる。
In addition, according to this configuration, since the sensor electrode is naturally formed on the back surface of the display panel when forming the light emitting element, it is not necessary to form transparent electrodes on both sides of the panel and to connect from the front surface to the back surface of the panel, thereby simplifying the manufacturing process. Simplified and improved reliability. Furthermore, it is possible to construct a highly reliable switch sensor that is free from malfunctions caused by dirt on the panel, oxidation or damage to the electrodes, and the like.

次に、図を用いて本発明の一実施例を具体的に
説明する。まず、透明なガラス基板10(40mm×
40mm)の片側に、In2O3ネサ膜(膜厚2000Å,シ
ート抵抗150Ω/cm2とした。)を蒸着により形成
し、次に、第3図に示すように、ネサパターン1
1を残してエツチングにより膜を取り除く。次
に、第4図のように、螢光体層12を形成する。
螢光体層12は、エレクトロルミネセンス用の螢
光体印刷ペーストを用いてスクリーン印刷すれば
よい。このとき、印刷膜厚は10〜40μm程度がよ
い。その理由は、10μm以下になると膜の絶縁耐
力が不足し、また40μmより厚くなると発光させ
るために高電圧を要するからである。次に、第5
図、第6図のように、背面電極13をアルミニウ
ム蒸着により形成する。なお、第5図は背面図、
第6図は第5図のX―X′断面図である。以上の
ように作製されたエレクトロルミネセンス表示素
子(以下EL表示素子という。)は、第6図で示し
たように前面のガラス基板10の裏面にネサパタ
ーン11を有しており、このネサパターン11を
タツチセンサ電極として使用することにより、ス
イツチセンサ内蔵表示素子とすることができる。
Next, one embodiment of the present invention will be specifically described using the drawings. First, a transparent glass substrate 10 (40 mm x
40 mm), an In 2 O 3 Nesa film (film thickness 2000 Å, sheet resistance 150 Ω/cm 2 ) was formed by vapor deposition, and then a Nesa pattern 1 was formed as shown in Figure 3.
The film is removed by etching, leaving only 1. Next, as shown in FIG. 4, a phosphor layer 12 is formed.
The phosphor layer 12 may be screen printed using an electroluminescent phosphor printing paste. At this time, the printing film thickness is preferably about 10 to 40 μm. The reason for this is that when the thickness is less than 10 μm, the dielectric strength of the film is insufficient, and when it is thicker than 40 μm, a high voltage is required to emit light. Next, the fifth
As shown in FIG. 6, the back electrode 13 is formed by aluminum vapor deposition. In addition, Figure 5 is a rear view,
FIG. 6 is a sectional view taken along line XX' in FIG. The electroluminescent display element (hereinafter referred to as an EL display element) manufactured as described above has a NESA pattern 11 on the back surface of the front glass substrate 10, as shown in FIG. By using it as a touch sensor electrode, it can be used as a display element with a built-in switch sensor.

次に、本実施例の回路構成を、第7図のブロツ
ク線図により説明する。第7図は、EL表示素子
14、ドライブ回路15、検出回路16、ドライ
ブ用の発振器17、スイツチング素子19、およ
びセンサ容量20により構成されている。このう
ち、センサ容量20について簡単に説明すると、
第6図において、前面パネル18に指で接触した
場合、パネル材としてガラス板等を用いると、指
はガラス基板10を介してネサパターン11に対
し数pFの静電容量を形成するが、これをセンサ
容量20としたものである。
Next, the circuit configuration of this embodiment will be explained with reference to the block diagram of FIG. Figure 7 shows an EL display element
14 , a drive circuit 15, a detection circuit 16, a drive oscillator 17, a switching element 19, and a sensor capacitor 20. Of these, the sensor capacitance 20 will be briefly explained as follows.
In FIG. 6, when a finger touches the front panel 18, if a glass plate or the like is used as the panel material, the finger forms a capacitance of several pF with respect to the Nesa pattern 11 through the glass substrate 10. The sensor capacity is 20.

次に、接触したか否かの検出方法について、誘
導ハム成分を利用する場合を例に挙げて、具体的
な回路を用いて説明する。第8図に該回路を示
す。図において、21は人体に誘起されるハム成
分であり、一般には10ボルト以上ある。このハム
成分21の電位差をセンサ容量20を介して注入
すると、A点から駆動回路29および検出回路2
3側のインピーダンスとセンサ容量20との比で
分割されたハムノイズがA点に発生する。A点に
発生する信号は、EL素子が駆動されていないと
きには、直流バイアスはされているが50Hzあるい
は60Hzのハムノイズのみで、他の成分は含んでい
ない。しかしながら、タツチセンサに接触して
EL表示素子を駆動すると、A点には駆動信号成
分が入り込み、ハム成分と駆動信号成分との分離
が難しい問題となる。そこで、本実施例では、
EL表示素子の駆動をドライブ用の発振器17で
行い、その発振周波数は500Hzとし、50Hzあるい
は60Hzのハムノイズと分離して検知している。第
8図において、鎖線で示した23は検出回路で、
高入力インピーダンスの増幅器である。検出回路
23の出力を、鎖線で示したローパスフイルタ2
4に入力し、50Hzあるいは60Hz成分のみを通過さ
せる。次に、直流分を取り除いた後、整流回路2
5で整流し、波形整形回路26を通して出力端2
7に出力する。この場合、出力端27の電位は、
センサ容量20を介して接触している間は高電位
になり、非接触時は零となつている。さらに、表
示の動作モードに応じて、出力端27の信号を処
理し、ドライブ回路入力端28に入力すればよ
い。
Next, a method for detecting whether or not there is contact will be described using a specific circuit, taking as an example a case where an induced hum component is used. FIG. 8 shows the circuit. In the figure, 21 is a hum component induced in the human body, which is generally 10 volts or more. When the potential difference of this hum component 21 is injected through the sensor capacitor 20, the drive circuit 29 and the detection circuit 2
Hum noise divided by the ratio of the impedance of the third side and the sensor capacitance 20 is generated at the point A. Although the signal generated at point A is DC biased when the EL element is not driven, it is only a 50Hz or 60Hz hum noise and does not contain other components. However, when touching the touch sensor,
When an EL display element is driven, a drive signal component enters the point A, making it difficult to separate the hum component and the drive signal component. Therefore, in this example,
The EL display element is driven by a drive oscillator 17, whose oscillation frequency is 500Hz, and is detected separately from hum noise at 50Hz or 60Hz. In FIG. 8, 23 indicated by a chain line is a detection circuit;
It is a high input impedance amplifier. The output of the detection circuit 23 is filtered through the low-pass filter 2 shown by the chain line.
4 and pass only the 50Hz or 60Hz component. Next, after removing the DC component, the rectifier circuit 2
5 and output terminal 2 through the waveform shaping circuit 26.
Output to 7. In this case, the potential of the output terminal 27 is
While in contact via the sensor capacitor 20, the potential is high, and when not in contact, the potential is zero. Furthermore, the signal at the output terminal 27 may be processed and input to the drive circuit input terminal 28 according to the display operation mode.

以上説明した実施例は、表示素子がEL表示素
子の場合を示したが、表示素子として液晶、エレ
クトロクロミツク素子等を用いる場合、いずれも
全く同様に実施できる。
In the embodiments described above, the display element is an EL display element, but if a liquid crystal, an electrochromic element, or the like is used as the display element, the embodiments can be implemented in exactly the same manner.

前述のように、本発明によれば、発光部にスイ
ツチセンサを有する薄型の表示素子が得られるの
で、前面操作パネル上に多数のスイツチを有する
製品のスイツチを容易にセンサ化でき、かつ使用
者が触れたスイツチを簡単に判別できる機能を併
せ持たせることが可能になる。
As described above, according to the present invention, it is possible to obtain a thin display element having a switch sensor in the light emitting part, so that the switches of a product having a large number of switches on the front operation panel can be easily converted into sensors, and the user can easily This makes it possible to have a function that allows you to easily identify the switch that has been touched.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図a,bは従来の表示装置付き押ボタンス
イツチのそれぞれ正面図および側面図、第2図
a,bは従来の静電容量変化検出型表示装置付き
スイツチのそれぞれ正面図および側面図、第3図
は本発明の一実施例に用いられるネサパターン付
きガラス基板の背面図、第4図は該基板の螢光体
印刷後の状態を示す背面図、第5図は該基板の背
面にさらにアルニウム電極を蒸着した状態を示す
背面図、第6図は第5図のX―X′断面を示す断
面図、第7図は該実施例の回路構成を示すブロツ
ク線図、第8図は該実施例の検出方法の具体例を
示す回路図である。 符号の説明、1……押ボタン、2……スイツチ
本体、3……発光ダイオード、5……センサパネ
ル、6……白熱灯、7……検出回路、8……スイ
ツチ、10……ガラス基板、11……ネサパター
ン、12……螢光体層、13……背面電極、14
……EL表示素子、15……ドライブ回路、16
……検出回路、17……発振器、18……前面パ
ネル、19……スイツチング素子、20……セン
サ容量、21……ハム成分、23……検出回路、
24……ローパスフイルタ、25……整流回路、
26……波形整形回路、27……出力端、28…
…ドライブ回路入力端、29……駆動回路。
Figures 1a and b are front and side views, respectively, of a conventional pushbutton switch with a display device, and Figures 2a and b are front and side views, respectively, of a conventional capacitance change detection type switch with a display device. FIG. 3 is a rear view of a glass substrate with a Nesa pattern used in an embodiment of the present invention, FIG. 4 is a rear view showing the state of the substrate after phosphor printing, and FIG. 6 is a cross-sectional view taken along line X-X' in FIG. 5, FIG. 7 is a block diagram showing the circuit configuration of the embodiment, and FIG. FIG. 2 is a circuit diagram showing a specific example of the detection method of the embodiment. Explanation of symbols, 1...Push button, 2...Switch body, 3...Light emitting diode, 5...Sensor panel, 6...Incandescent lamp, 7...Detection circuit, 8...Switch, 10...Glass substrate , 11... Nesa pattern, 12... Fluorescent layer, 13... Back electrode, 14
...EL display element, 15...Drive circuit, 16
...detection circuit, 17 ... oscillator, 18 ... front panel, 19 ... switching element, 20 ... sensor capacitance, 21 ... hum component, 23 ... detection circuit,
24...Low pass filter, 25...Rectifier circuit,
26... Waveform shaping circuit, 27... Output end, 28...
...drive circuit input terminal, 29 ...drive circuit.

Claims (1)

【特許請求の範囲】[Claims] 1 一部または全面が透明な基板上に、透明な電
極と、表示層と、透明または不透明な電極とを順
次積層することにより形成された薄型の表示素子
を有し、該表示素子を搭載している基板の第1主
面に設けられた少なくとも1つの該表示素子の電
極をセンサ電極とし、これと該基板の第2主面と
の間に生じる静電容量により印加されるハム成分
を検知する検知回路を備え、該検知回路の出力に
よりスイツチ素子の駆動回路または前記表示素子
の駆動用電源を制御することを特徴とするスイツ
チセンサ内蔵表示素子。
1. A thin display element formed by sequentially laminating a transparent electrode, a display layer, and a transparent or opaque electrode on a partially or fully transparent substrate, and the display element is mounted on the substrate. The electrode of at least one display element provided on the first main surface of the substrate is used as a sensor electrode, and the hum component applied by the capacitance generated between this and the second main surface of the substrate is detected. 1. A display element with a built-in switch sensor, comprising a detection circuit for controlling a drive circuit for a switch element or a power source for driving the display element based on an output of the detection circuit.
JP2447278A 1978-03-06 1978-03-06 Display element incorporating switch sensor Granted JPS54117696A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2447278A JPS54117696A (en) 1978-03-06 1978-03-06 Display element incorporating switch sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2447278A JPS54117696A (en) 1978-03-06 1978-03-06 Display element incorporating switch sensor

Publications (2)

Publication Number Publication Date
JPS54117696A JPS54117696A (en) 1979-09-12
JPS6145836B2 true JPS6145836B2 (en) 1986-10-09

Family

ID=12139099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2447278A Granted JPS54117696A (en) 1978-03-06 1978-03-06 Display element incorporating switch sensor

Country Status (1)

Country Link
JP (1) JPS54117696A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01164834U (en) * 1988-05-10 1989-11-17

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0654272B2 (en) * 1986-02-18 1994-07-20 株式会社共和電業 Physical quantity-electric quantity converter and high temperature flow meter
JPH0513065Y2 (en) * 1986-03-06 1993-04-06
TWI374379B (en) 2007-12-24 2012-10-11 Wintek Corp Transparent capacitive touch panel and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01164834U (en) * 1988-05-10 1989-11-17

Also Published As

Publication number Publication date
JPS54117696A (en) 1979-09-12

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