JPS6144912B2 - - Google Patents
Info
- Publication number
- JPS6144912B2 JPS6144912B2 JP56029930A JP2993081A JPS6144912B2 JP S6144912 B2 JPS6144912 B2 JP S6144912B2 JP 56029930 A JP56029930 A JP 56029930A JP 2993081 A JP2993081 A JP 2993081A JP S6144912 B2 JPS6144912 B2 JP S6144912B2
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- mol
- copper
- bromine
- zinc sulfide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 26
- 239000005083 Zinc sulfide Substances 0.000 claims description 23
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 23
- 239000010949 copper Substances 0.000 claims description 18
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 17
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 17
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052794 bromium Inorganic materials 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 238000010304 firing Methods 0.000 claims description 8
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 6
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 4
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 239000012190 activator Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- UZIQYAYUUNMDMU-UHFFFAOYSA-N N.[Br+] Chemical compound N.[Br+] UZIQYAYUUNMDMU-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000003081 coactivator Effects 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- -1 hydrogen sulfide Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Description
本発明は輝度が高くかつ寿命の長い面状光源も
しくは表示素子用ELケイ光体及びその製造方法
に関する。
従来、この種のELケイ光体は、硫化亜鉛
(ZnS)を母体とし、これに活性剤ととして銅又
は銀等、共活性剤としてアルミニウム、塩素又は
臭素等を含み、塩化アンモニウム(NH4Cl)等を
フラツクスとして焼成されていた。しかし、これ
らはいずれも劣化が激しく、寿命が短いという欠
点をもつている。この劣化は、ZnSの結晶中に含
まれるS欠陥及び銅等の拡散によるとする基本的
な考え方から、拡散を妨げるため、イオン半径の
大きいイオンを結晶中に導入することにより長寿
命化できると考えられていた。
そして、これに基づき、長寿命ケイ光体を得る
ための試みが種々なされている。例えば、ウエス
チングハウス社のレーマン(Lehmann)は、ZnS
の亜鉛の一部をイオン半径の大きいカドミウムに
置換し、共活性剤として塩素よりもイオン半径の
大きい臭素を用いたケイ光体は劣化しないと発表
している。〔J.Electrochem.Soc.、vol 113、P.40
(1966)参照〕しかしながら、このケイ光体は、
カドミウムを含むため公害問題がある他、この発
表の真偽について疑義が持たれるに至つている。
(W.E.HowardによるSociety for Infor´mation
Displayの1980年Seminar Lecture Notes、
Vol.1、April 28.P.78以降参照)
又、ZnSに活性剤として銅、共活性剤として臭
素を加えたケイ光体(ZnS:Cu、Br)を、硝酸
銅〔Cu(NO3)2〕と臭化アンモニウム(NH4Br)
を原料としてZnS1モルに対しCu(NO3)21.3×
10-3モル及びNH4Br2×10-2モルを添加したケイ
光体を焼成して製造した例もある。(三菱電気技
報、Vol.44、1534頁、1970年参照)しかし、これ
らは、活性剤及び共活性剤の添加量が少なく、輝
度が低い。
すなわち、上記のような種々の試みがなされて
いるにもかかわらず、銅及び臭素の添加量及び焼
成条件の最適化を図ることができず、高輝度で長
寿命のケイ光体は得られるに至つていない。
本発明はこのような現状に鑑みてなされたもの
であり、その目的は、上記の欠点及び問題点を解
決し、高輝度かつ長寿命のZnSを母体とするケイ
光体及びその製造方法を提供することである。
本発明につき概説すれば、本発明のELケイ光
体(第1番目の発明)は、硫化亜鉛及び硫化亜鉛
に対し0.1〜0.5モル%の銅ならびに0.05〜0.5モル
%の臭素よりなることを特徴とし、又、本発明の
ELケイ光体の製造方法(第2番目の発明)は、
硫化亜鉛及び硫化亜鉛に対し0.1〜0.5モル%の銅
ならびに0.05〜00.5モル%の臭素よりなるELケ
イ光体を製造するに当り、硫化亜鉛及び硫化亜鉛
に対し0.15〜1.5モル%の酢酸銅ならびに0.15〜24
モル%の臭素アンモニウムよりなる混合物を硫化
水素を含む雰囲気中で焼成することを特徴とする
ものである。
本発明者等は、硫化亜鉛を母体とし、これに活
性剤として銅を、共活性剤として臭素を添加した
硫化亜鉛系ELケイ光体(以下ケイ光体という)
につき種々検討を重ねた結果、ケイ光体の寿命は
ケイ光体の結晶性に大きく依存し、それを向上さ
せしかも優れた輝度を与えるためには銅及び臭素
の添加、含有量を最適範囲内にすることが必要で
あることを見出して本発明に到達した。
本発明においては、ケイ光体中に硫化亜鉛に対
し0.1〜0.5モル%、望ましくは0.2〜0.3%の銅な
らびに0.05〜0.5モル%、望ましくは0.2〜0.3%の
臭素を含有させる。両者の含有量がこの範囲未満
では寿命が低下し、この範囲を越えると輝度が低
下する。又、両者の含有量に差があると寿命、輝
度共に落ちる傾向が認められ、等モル%に近い含
有量とすることが特に望ましい。
本発明の上記組成を有するケイ光体の製造に当
つては、硫化亜鉛に対し0.15〜0.5モル%の酢酸
銅のような銅塩ならびに0.15〜24モル%の臭化ア
ンモニウムを硫化亜鉛に混合して焼成を行なう。
酢酸銅は1部が結晶体中に入り、他は結晶表面に
付着して洗い流されるので、過剰量を使用する。
又、臭素は昇華し易く銅に比較しケイ光体中に入
り難く、フラツクスの臭化アンモニウムも比較的
多めに使用する。焼成は硫化水素のような硫黄化
合物雰囲気中で行なうことにより、S欠陥すなわ
ち結晶性の低下を防止する。又、焼成温度はでき
るだけ低い900℃前後が適当であり、1000℃以上
にすると臭素が昇華して結晶中に入り難く結晶性
の低下を招き、又、低温では焼成が不完全とな
る。又、前記したように、銅が臭素に比較して多
く入つたケイ光体は電荷補償からS欠陥を生じて
結晶性が低下するので、この意味からも低温焼成
が望ましく、又、銅と臭素の合有量は等モルに近
い程望ましい。
次に、本発明及びその効果を実施例により説明
するが、本発明はこれらによりなんら限定される
ものではない。
実施例 1〜12
硫化亜鉛に対し酢酸銅(第二銅)及び臭素アン
モニウムを下記第1表に示す場合(仕込比:モル
%)でよく混合し、硫化水素を含む雰囲気中、
900℃において4〜8時間焼成した。
このようにして得られたケイ光体をフツ素ゴム
(ダイキン工業社製、G501)をバインダーとし、
ケイ光体とバインダーの混合比を体積比で6:4
として、透明電極極上に発光層を形成し、EL素
子を作製し、これらの輝度及び寿命を調べた。
すなわち、これらのEL素子に10KHzの交流電
圧を印加し、発光層の電界強度が4×104V/cmの
ときの輝度を測定し、各ケイ光体の輝度とした。
又、寿命は、400Hzの交流電圧を印加したとき、
初期輝度50ニツトが半減する時間で定義した。得
られた結果を下記第1表に示す。
The present invention relates to an EL phosphor for a planar light source or display element that has high brightness and a long life, and a method for manufacturing the same. Conventionally, this type of EL phosphor uses zinc sulfide (ZnS) as a matrix, contains an activator such as copper or silver, a co-activator such as aluminum, chlorine or bromine, and contains ammonium chloride (NH 4 Cl). ) etc. were used as flux for firing. However, all of these have the drawbacks of severe deterioration and short lifespan. The basic idea is that this deterioration is due to S defects contained in the ZnS crystal and the diffusion of copper, etc., and that it is possible to extend the life by introducing ions with a large ionic radius into the crystal to prevent diffusion. It was considered. Based on this, various attempts have been made to obtain long-life phosphors. For example, Westinghouse's Lehmann has
It has been announced that a phosphor that replaces a portion of the zinc with cadmium, which has a larger ionic radius, and uses bromine, which has a larger ionic radius than chlorine, as a coactivator does not deteriorate. [J.Electrochem.Soc., vol 113, P.40
(1966)] However, this phosphor
Not only does it pose a pollution problem because it contains cadmium, but the authenticity of this announcement has also been questioned.
(Society for Information´mation by WEHoward
Display's 1980 Seminar Lecture Notes,
Vol. 1, April 28. P. 78 onwards) In addition, phosphor (ZnS: Cu, Br), which is made by adding copper as an activator and bromine as a co-activator to ZnS, is mixed with copper nitrate [Cu (NO 3 )]. 2 ] and ammonium bromide (NH 4 Br)
Cu(NO 3 ) 2 1.3× for 1 mol of ZnS as raw material
There is also an example of manufacturing by firing a phosphor to which 10 -3 mol and NH 4 Br2×10 -2 mol are added. (Refer to Mitsubishi Electric Technical Report, Vol. 44, p. 1534, 1970) However, these have low brightness due to the small amount of activator and co-activator added. In other words, despite the various attempts mentioned above, it has not been possible to optimize the amounts of copper and bromine added and the firing conditions, and it has not been possible to obtain a phosphor with high brightness and long life. I haven't reached it yet. The present invention has been made in view of the current situation, and its purpose is to solve the above-mentioned drawbacks and problems, and to provide a phosphor based on ZnS with high brightness and long life, and a method for manufacturing the same. It is to be. To summarize the present invention, the EL phosphor of the present invention (first invention) is characterized by comprising zinc sulfide and 0.1 to 0.5 mol% copper and 0.05 to 0.5 mol% bromine relative to zinc sulfide. Also, the present invention
The method for manufacturing an EL phosphor (second invention) is
In producing an EL phosphor consisting of zinc sulfide and 0.1 to 0.5 mol % of copper and 0.05 to 0.5 mol % of bromine based on zinc sulfide, copper acetate and 0.15 to 1.5 mol % of copper acetate and zinc sulfide are used. 0.15~24
The method is characterized in that a mixture consisting of mol% ammonium bromine is calcined in an atmosphere containing hydrogen sulfide. The present inventors have developed a zinc sulfide-based EL phosphor (hereinafter referred to as phosphor) that uses zinc sulfide as a matrix, to which copper is added as an activator, and bromine is added as a co-activator.
As a result of various studies, we found that the lifetime of a phosphor greatly depends on the crystallinity of the phosphor, and in order to improve this and provide excellent brightness, the addition and content of copper and bromine must be kept within the optimal range. The present invention was achieved by discovering that it is necessary to do so. In the present invention, the phosphor contains 0.1 to 0.5 mol %, preferably 0.2 to 0.3 %, of copper and 0.05 to 0.5 mol %, preferably 0.2 to 0.3 % of bromine based on zinc sulfide. If the content of both is less than this range, the life will be reduced, and if it exceeds this range, the brightness will be reduced. Moreover, if there is a difference in the content of both, it is recognized that both the life span and the brightness tend to decrease, so it is particularly desirable that the content be close to equimolar %. In producing the phosphor of the present invention having the above composition, 0.15 to 0.5 mol% of a copper salt such as copper acetate and 0.15 to 24 mol% of ammonium bromide are mixed with zinc sulfide. Then perform firing.
One part of copper acetate goes into the crystal, and the other part adheres to the crystal surface and is washed away, so use an excess amount.
Furthermore, bromine sublimes easily and is less likely to enter the phosphor than copper, so a relatively large amount of ammonium bromide flux is used. By performing the calcination in an atmosphere containing a sulfur compound such as hydrogen sulfide, S defects, that is, deterioration of crystallinity, are prevented. Further, the firing temperature is suitably as low as possible, around 900°C; if it is higher than 1000°C, bromine will sublimate and will be difficult to enter the crystal, resulting in a decrease in crystallinity, and at low temperatures, the firing will be incomplete. Furthermore, as mentioned above, a phosphor containing a large amount of copper compared to bromine will generate S defects due to charge compensation, resulting in a decrease in crystallinity, so from this point of view as well, low temperature firing is desirable. It is desirable that the combined amount of is close to equimolar. Next, the present invention and its effects will be explained by examples, but the present invention is not limited to these in any way. Examples 1 to 12 Copper acetate (cupric) and ammonium bromine were mixed well with zinc sulfide in the cases shown in Table 1 below (preparation ratio: mol%), and in an atmosphere containing hydrogen sulfide,
It was baked at 900°C for 4 to 8 hours. The thus obtained phosphor was used as a binder with fluorocarbon rubber (manufactured by Daikin Industries, Ltd., G501).
The mixing ratio of phosphor and binder is 6:4 by volume.
We fabricated an EL device by forming a light-emitting layer on a transparent electrode, and investigated its brightness and lifetime. That is, an alternating current voltage of 10 KHz was applied to these EL elements, and the brightness when the electric field strength of the light emitting layer was 4×10 4 V/cm was measured, and this was taken as the brightness of each phosphor.
Also, the lifespan is when 400Hz AC voltage is applied.
Defined as the time it takes for the initial brightness of 50 nits to decrease by half. The results obtained are shown in Table 1 below.
【表】
第1表から明らかなように、いずれの場合も、
寿命は2000時間を越え、又、輝度も100ニツトを
越える。特に、実施例11では、寿命は15000時間
を越え長寿命が達成され、かつ輝度も450ニツト
と高い。
参考例 1〜2
添加物の含有量を下記第2表に示すように少な
くした以外は実施例1と同様にしてEL素子を作
製し、これらの輝度及び寿命を調べた。得られた
結果を下記第2表に示す。[Table] As is clear from Table 1, in both cases,
The lifespan is over 2000 hours, and the brightness is over 100 nits. In particular, in Example 11, a long life of over 15,000 hours was achieved, and the brightness was as high as 450 nits. Reference Examples 1-2 EL devices were produced in the same manner as in Example 1, except that the content of additives was reduced as shown in Table 2 below, and their brightness and lifespan were examined. The results obtained are shown in Table 2 below.
【表】
第2表から明らかなように、銅及び臭素の含有
量が少ない場合には、当然フラツクスとしての臭
化アンモニウムも少ないため、結晶性が向上せ
ず、寿命が短かくなる傾向にある。
参考例 3〜4
添加物の含有量を下記第3表に示すように多く
した以外は実施例1と同様にしてEL素子を作製
し、これらの輝度及び寿命を調べた。得られた結
果を下記第3表に示す。[Table] As is clear from Table 2, when the content of copper and bromine is low, of course there is also little ammonium bromide as a flux, so crystallinity does not improve and the life tends to be shortened. . Reference Examples 3 to 4 EL devices were produced in the same manner as in Example 1, except that the content of additives was increased as shown in Table 3 below, and their brightness and lifespan were examined. The results obtained are shown in Table 3 below.
【表】
第3表から明らかなように、添加物の含有量を
多くすると、寿命は比較的長いにもかかわらず、
銅と臭素の含有量が等モル%より銅が多い方へず
れ易く、輝度が低下する傾向がある。
以上説明したように、本発明によれば、添加剤
原料及びそれらの仕込量を最適化することによ
り、ELケイ光体の結晶性の向上を実現し、輝度
が高くかつ寿命の長いELケイ光体が得られる。
したがつて、本発明は、平面光源もしくは表示素
子の特性向上に大きな寄与をなすものである。[Table] As is clear from Table 3, when the content of additives is increased, the lifespan is relatively long, but
The content of copper and bromine tends to deviate from equimolar % to higher amounts of copper, and the brightness tends to decrease. As explained above, according to the present invention, by optimizing the raw materials for additives and their amounts, it is possible to improve the crystallinity of the EL phosphor, thereby producing an EL phosphor with high brightness and long life. You get a body.
Therefore, the present invention makes a significant contribution to improving the characteristics of flat light sources or display elements.
Claims (1)
の銅ならびに0.05〜0.5モル%の臭素よりなるこ
とを特徴とするELケイ光体。 2 硫化亜鉛及び硫化亜鉛に対し0.1〜0.5モル%
の銅ならびに0.05〜0.5モル%の臭素よりなるEL
ケイ光体を製造するに当り、硫化亜鉛及び硫化亜
鉛に対し0.15〜1.5モル%の酢酸銅ならびに0.15〜
24モル%の臭化アンモニウムよりなる混合物を硫
化水素を含む雰囲気中で焼成することを特徴とす
るELケイ光体の製造方法。[Claims] 1. Zinc sulfide and 0.1 to 0.5 mol% relative to zinc sulfide
of copper and 0.05 to 0.5 mol% of bromine. 2 Zinc sulfide and 0.1 to 0.5 mol% relative to zinc sulfide
EL consisting of copper and 0.05-0.5 mol% bromine
In producing the phosphor, zinc sulfide and 0.15 to 1.5 mol% of copper acetate and 0.15 to 1.5 mol% of zinc sulfide are used.
A method for producing an EL phosphor, comprising firing a mixture consisting of 24 mol% ammonium bromide in an atmosphere containing hydrogen sulfide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56029930A JPS57145174A (en) | 1981-03-04 | 1981-03-04 | El fluorescent substance and preparation of same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56029930A JPS57145174A (en) | 1981-03-04 | 1981-03-04 | El fluorescent substance and preparation of same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57145174A JPS57145174A (en) | 1982-09-08 |
JPS6144912B2 true JPS6144912B2 (en) | 1986-10-04 |
Family
ID=12289701
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56029930A Granted JPS57145174A (en) | 1981-03-04 | 1981-03-04 | El fluorescent substance and preparation of same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57145174A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH039511U (en) * | 1989-06-12 | 1991-01-29 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW467949B (en) * | 1998-08-26 | 2001-12-11 | Toshiba Corp | Electroluminescent phosphor and electroluminescent element using the same |
US6318094B1 (en) * | 2000-08-11 | 2001-11-20 | Paul Mueller Company | Bimetallic tube in a heat exchanger of an ice making machine |
JP5339683B2 (en) * | 2007-03-02 | 2013-11-13 | キヤノン株式会社 | Method of manufacturing phosphor film using multi-source vacuum deposition method |
-
1981
- 1981-03-04 JP JP56029930A patent/JPS57145174A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH039511U (en) * | 1989-06-12 | 1991-01-29 |
Also Published As
Publication number | Publication date |
---|---|
JPS57145174A (en) | 1982-09-08 |
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