JPH0260704B2 - - Google Patents
Info
- Publication number
- JPH0260704B2 JPH0260704B2 JP63027749A JP2774988A JPH0260704B2 JP H0260704 B2 JPH0260704 B2 JP H0260704B2 JP 63027749 A JP63027749 A JP 63027749A JP 2774988 A JP2774988 A JP 2774988A JP H0260704 B2 JPH0260704 B2 JP H0260704B2
- Authority
- JP
- Japan
- Prior art keywords
- zns
- activator
- added
- mol
- firing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010949 copper Substances 0.000 claims description 43
- 239000005083 Zinc sulfide Substances 0.000 claims description 33
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 33
- 238000010304 firing Methods 0.000 claims description 25
- 239000012190 activator Substances 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 7
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 7
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 16
- 239000012298 atmosphere Substances 0.000 description 9
- 238000005401 electroluminescence Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910052794 bromium Inorganic materials 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KXJGSNRAQWDDJT-UHFFFAOYSA-N 1-acetyl-5-bromo-2h-indol-3-one Chemical compound BrC1=CC=C2N(C(=O)C)CC(=O)C2=C1 KXJGSNRAQWDDJT-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Description
［産業上の利用分野］
本発明は螢光体の製造方法に関し、特にエレク
トロルミネツセンス（EL）用の螢光体の製造方
法に関する。
［従来の技術］
螢光体として硫化亜鉛（ZnS）は古くから広く
用いられている。螢光体として用いる場合付活剤
を添加している。
付活剤として銅（Cu）を添加する場合、硫化
亜鉛（ZnS）に発光中心を有効に形成するため、
付活剤としてのCuを0.1―1.0mol％添加し、さら
に共付活剤として塩素（Cl）を適量添加し、硫化
水素（H2S）雰囲気中で900―1100℃の焼成をす
る。
次にZnSに固溶しなかつたCuをシアンエツチ
ングで除去し、乾燥して、EL用螢光体を得てい
た。
［発明が解決しようとする問題点］
ZnSにCuを多く添加すると、寿命は比較的長
くなるが輝度が低下する。これは、多量に添加し
たCuがZnSに入りきれず表面にCuxＳとして析出
し、シアンエツチングしても十分に除去できない
ためである。
本発明の目的は、ZnSに付活剤としてCuを十
分量添加し、かつ表面にCuxSを多く折出し、輝
度を低く、寿命を短くすることを防ぐことのでき
るEL用螢光体の製造方法を提供することである。
［問題点を解決するための手段］
本発明のEL用螢光体の製造方法は、硫化亜鉛
に付活剤として銅、共付活剤としてハロゲンを添
加、焼成する方法を、硫化水素中900―1100℃の
高温焼成と不活性ガス中500―800℃の低温焼成の
２段階で行い、前記高温焼成では0.01〜0.20mol
％の銅と、共付活剤としてのハロゲンを添加し、
前記低温焼成では0.01〜0.30mol％の銅と、共付
活剤としてのハロゲンを添加したことを特徴とす
る。
［作用］
高温焼成で螢光体として適当な粒径にすると共
に硫化亜鉛を付活し、低温焼成で硫化水素を雰囲
気とすることでＳの欠陥発生を防止し、さらに銅
を添加して付活することで長寿命と高輝度とが実
現されると考えられる。
［実施例］
まず、硫化亜鉛（ZnS）に付活剤として銅
（Cu）を0.01―0.20mol％添加し、硫化水素雰囲
気中、900―1100℃で高温焼成（１回目の焼成）
をする。
次にCu等を既に添加したZnSに再度Cuを0.01
―0.30mol％添加し、不活性雰囲気中500―800℃
で低温焼成（２回目の焼成）をする。
なお、１回目および２回目の焼成するとき、共
付活剤としてアルミニウム、塩素、臭素、よう
素、のうち１種類以上をCuと同時に添加してお
くのがよい。
以下、より具体的に述べる。
ZnSに付活剤であるCuを多く添加しすぎると
輝度が低下するので、EL発光させるのに必要な
量、すなわちCuを0.01―0.20mol％、共付活剤と
してBrを10.0mol％添加した後、硫化水素雰囲気
中で900―1100℃の高温焼成をする。
次にCu，Brを既に添加したZnSに、再度Cuを
0.01―0.30mol％、Brを2.0mol％添加した後、不
活性雰囲気（N2.Ar等）中、500―800℃で低温焼
成をする。
２回目の焼成が低温で行えるのは、１回目の高
温焼成でZnSを螢光体として十分な粒径にしてお
くので、２回目の焼成はZnSへCuおよびBrの導
入を行えばよいため500―800℃の低温で焼成を行
えるのであると考えられる。
この方法によりZnS表面に析出するCuxＳの量
が低下し、シアンエツチングによつてCuの除去
が行なわれ、輝度を下げないで寿命を長くするこ
とができる。
例を上げて説明する。
例 １
高純度硫化亜鉛（ZnS）粉末に付活剤として銅
（Cu）を硝酸銅（Cu（NO3）2）の形で0.05mol％、
共付活剤として臭素（Br）を臭化アンモニウム
（NH4Br）の形で10.0mol％、さらに螢光体の粒
径を揃えるためバリウム（Ba）を硝酸バリウム
（Ba（NO3）2）の形で0.5mol％添加し、湿式混合
を行つた。次にこれを乾燥し、硫化水素雰囲気中
で1000℃で４時間高温焼成した。ここで、湿式混
合は付活剤、共付活剤等を純水に溶解させ、この
溶液にZnS粉末を分散、撹拌した後、水分を蒸発
除去することで行つた。
Cu，Br，Baを含むZnSに再びCu（NO3）2を
0.05mol％NH4Brを2.0mol％添加し湿式混合し
た。次にこれを乾燥し、窒素雰囲気中で750℃で
１時間低温焼成した。その後10％のシアン化ナト
リウム水溶液でZnSに固溶しなかつたCuをエツ
チングし、乾燥し、ふるいにかけて、平均粒径
25μmのZnS：Cu，Br螢光体を得た。
以上のように作製された螢光体をシアノエチル
セルロースに分散し、アルミウム電極上の発光層
としてスクリーン印刷し、さらにその上に透明電
極を形成して厚膜EL素子を作製した。発光層に
400Hzの交流電界を印加し、電界強度を1.5×
103V／cmとし輝度をフオトメータ（テクトロニ
クス社製）で測定した。寿命は400Hzの交流電界
を印加し、初期輝度を60cd／m2に調整し、
30cd／m2に半減するまでに要する時間とした。
例２―例11
例１と同様の方法でZnS：Cu，Br螢光体を作
製した。ただし、Cu（NO3）2の添加量と高温焼成
時の温度および低温焼成時の温度、雰囲気を変え
た。素子作製方法と輝度、寿命の測定方法は例１
と同様である。
比較例 １
ZnSにCu（NO3）2を0.3mol％NH4Brを10.0mol
％とBa（NO3）2を0.5mol％添加し、湿式混合し
た。次にこれを乾燥し、硫化水素雰囲気中で1000
℃で４時間焼成した。その後10％のシアン化ナト
リウム水溶液でZnSに固溶しなかつたCuをエツ
チングし、乾燥し、ふるいにかけて平均粒径
27μmのZnS：Cu，Br螢光体を得た。素子作製方
法と輝度、寿命の測定方法は例１と同様である。
比較例 ２
比較例１と同様の方法でZnS：Cu，Br螢光体
を作製した。ただし、Cu（NO3）2の添加量を
0.5mol％とした。素子作製方法と輝度、寿命の
測定方法は比較例１と同様である。
結果を次頁の表に示した。
比較例１，２から明らかなようにCu（NO3）2の
添加量が多くなると輝度は低下するが寿命は長く
なつている。それに対して本発明による例では、
輝度も高く、寿命も長くなり、特に例５では比較
例１に対して輝度で1.4倍、寿命で1.5倍の優れた
特性が得られた。
以上ZnS：Cu，Br螢光体で説明を行つたがBr
に変えてAl，Cl，Ｉを用いることができ
[Industrial Field of Application] The present invention relates to a method for manufacturing a phosphor, and particularly to a method for manufacturing a phosphor for electroluminescence (EL). [Prior Art] Zinc sulfide (ZnS) has been widely used as a fluorescent substance for a long time. When used as a phosphor, an activator is added. When copper (Cu) is added as an activator, it effectively forms luminescent centers in zinc sulfide (ZnS).
Add 0.1-1.0 mol% of Cu as an activator, add an appropriate amount of chlorine (Cl) as a co-activator, and sinter at 900-1100°C in a hydrogen sulfide (H 2 S) atmosphere. Next, the Cu that was not dissolved in ZnS was removed by cyan etching and dried to obtain an EL phosphor. [Problems to be Solved by the Invention] When a large amount of Cu is added to ZnS, the lifetime becomes relatively long, but the brightness decreases. This is because the large amount of Cu added cannot fully enter the ZnS and precipitates on the surface as Cu x S, which cannot be removed satisfactorily even by cyan etching. The object of the present invention is to add a sufficient amount of Cu as an activator to ZnS, and to produce a phosphor for EL that can prevent a large amount of CuxS from being precipitated on the surface, resulting in low brightness and shortened lifespan. The goal is to provide the following. [Means for Solving the Problems] The method for manufacturing an EL phosphor of the present invention involves adding copper as an activator and halogen as a co-activator to zinc sulfide, and baking the mixture in hydrogen sulfide at 900 °C. It is carried out in two stages: high-temperature firing at -1100℃ and low-temperature firing at 500-800℃ in an inert gas.
% copper and halogen as co-activator,
The low-temperature firing is characterized in that 0.01 to 0.30 mol% of copper and halogen as a co-activator are added. [Function] High-temperature firing is used to make the particle size appropriate for the phosphor, zinc sulfide is activated, and low-temperature firing is performed to create an atmosphere of hydrogen sulfide to prevent S defects, and further copper is added to It is thought that long life and high brightness can be realized by using the same method. [Example] First, 0.01-0.20 mol% of copper (Cu) was added as an activator to zinc sulfide (ZnS) and fired at a high temperature of 900-1100°C in a hydrogen sulfide atmosphere (first firing).
do. Next, add 0.01% Cu again to ZnS to which Cu etc. have already been added.
-0.30mol% added, 500-800℃ in inert atmosphere
Fire at a low temperature (second firing). In addition, when performing the first and second firings, it is preferable to add at least one of aluminum, chlorine, bromine, and iodine as a co-activator at the same time as Cu. This will be described in more detail below. If too much Cu as an activator is added to ZnS, the brightness will decrease, so we added the amount necessary for EL emission, that is, 0.01-0.20 mol% of Cu and 10.0 mol% of Br as a co-activator. After that, it is fired at a high temperature of 900-1100℃ in a hydrogen sulfide atmosphere. Next, add Cu again to the ZnS to which Cu and Br have already been added.
After adding 0.01-0.30 mol% and 2.0 mol% of Br, it is fired at a low temperature of 500-800°C in an inert atmosphere (N 2 .Ar, etc.). The reason why the second firing can be performed at a low temperature is that the first high temperature firing makes the ZnS grains large enough to serve as a phosphor, and the second firing only requires introducing Cu and Br into the ZnS. It is thought that firing can be performed at a low temperature of -800℃. This method reduces the amount of Cu x S precipitated on the ZnS surface and removes Cu by cyan etching, making it possible to extend the life without reducing brightness. Let me explain with an example. Example 1 Add 0.05 mol% of copper (Cu) as an activator to high-purity zinc sulfide (ZnS) powder in the form of copper nitrate (Cu(NO 3 ) 2 ).
Bromine (Br) was used as a co-activator at 10.0 mol% in the form of ammonium bromide (NH 4 Br), and barium (Ba) was added as barium nitrate (Ba(NO 3 ) 2 ) to make the particle size of the phosphor uniform. 0.5 mol% was added in the form of , and wet mixing was performed. Next, this was dried and fired at a high temperature of 1000° C. for 4 hours in a hydrogen sulfide atmosphere. Here, the wet mixing was performed by dissolving the activator, co-activator, etc. in pure water, dispersing the ZnS powder in this solution, stirring, and then evaporating the water. Adding Cu(NO 3 ) 2 to ZnS containing Cu, Br, and Ba
2.0 mol% of 0.05 mol% NH 4 Br was added and wet mixed. Next, this was dried and low-temperature calcined at 750° C. for 1 hour in a nitrogen atmosphere. After that, the Cu that was not dissolved in ZnS was etched with a 10% aqueous sodium cyanide solution, dried, and sieved to determine the average particle size.
A 25μm ZnS:Cu,Br phosphor was obtained. The phosphor prepared as described above was dispersed in cyanoethyl cellulose, screen printed as a light emitting layer on an aluminum electrode, and a transparent electrode was further formed on top of the screen printing to produce a thick film EL device. in the luminescent layer
Apply a 400Hz AC electric field and increase the field strength to 1.5×
The brightness was measured at 10 3 V/cm using a photometer (manufactured by Tektronix). To measure the lifespan, apply a 400Hz AC electric field, adjust the initial brightness to 60cd/ m2 ,
The time required for the amount to decrease by half to 30 cd/m 2 was defined as the time required. Example 2 - Example 11 A ZnS:Cu,Br phosphor was prepared in the same manner as in Example 1. However, the amount of Cu(NO 3 ) 2 added, the temperature during high-temperature firing, the temperature and atmosphere during low-temperature firing were changed. Example 1 shows how to fabricate the device and how to measure brightness and lifetime.
It is similar to Comparative example 1 0.3 mol% of Cu(NO 3 ) 2 and 10.0 mol of NH 4 Br in ZnS
% and 0.5 mol % of Ba(NO 3 ) 2 were added and wet mixed. This is then dried and heated to 1000 °C in a hydrogen sulfide atmosphere.
It was baked at ℃ for 4 hours. After that, Cu that was not dissolved in ZnS was etched with a 10% aqueous sodium cyanide solution, dried, and sieved to obtain an average particle size of
A 27μm ZnS:Cu,Br phosphor was obtained. The device manufacturing method and the method of measuring brightness and lifetime are the same as in Example 1. Comparative Example 2 A ZnS:Cu,Br phosphor was produced in the same manner as in Comparative Example 1. However, if the amount of Cu( NO3 ) 2 added is
It was set to 0.5 mol%. The device manufacturing method and the method of measuring brightness and lifetime are the same as in Comparative Example 1. The results are shown in the table on the next page. As is clear from Comparative Examples 1 and 2, as the amount of Cu(NO 3 ) 2 added increases, the brightness decreases, but the life becomes longer. In contrast, in the example according to the invention,
The brightness was also high and the lifespan was long. In particular, in Example 5, excellent characteristics were obtained, with the brightness being 1.4 times and the lifespan 1.5 times that of Comparative Example 1. The above explanation was given using ZnS:Cu,Br phosphor, but Br
Al, Cl, I can be used instead of
【表】
る。また高温焼成と低温焼成の際、共付活剤の種
類を変えても同様の効果が得られる。
［発明の効果］
本発明は一度にCuを多量添加するとZnS表面
にCuxＳが多く析出し、輝度が低下するのでCu添
加を２段階で行い、、高温焼成時にCuxＳを多く
析出させないところに特徴がある。
すなわち、１回目の焼成（高温焼成）でEL発
光に必要な分だけCuを添加し、螢光体として十
分な粒径を得た後、２回目の焼成（低温焼成）で
は再度適量のCuをZnSに導入する。処理温度が
低いのでCuxＳが多く析出しない。これにより、
輝度を高く、寿命を長くすることができる。[Table] Furthermore, the same effect can be obtained even if the type of co-activator is changed during high-temperature and low-temperature firing. [Effects of the invention] In the present invention, if a large amount of Cu is added at once, a large amount of Cu x S will precipitate on the ZnS surface and the brightness will decrease. Therefore, Cu is added in two stages to prevent a large amount of Cu x S from precipitating during high temperature firing. The place has its characteristics. In other words, in the first firing (high-temperature firing), Cu is added in the amount necessary for EL emission to obtain a sufficient particle size as a phosphor, and then in the second firing (low-temperature firing), an appropriate amount of Cu is added again. Introduced to ZnS. Since the processing temperature is low, a large amount of Cu x S does not precipitate. This results in
It can increase brightness and extend life.
Claims (1)
ハロゲンを添加、焼成する方法を、硫化水素中
900―1100℃の高温焼成と不活性ガス中500―800
℃の低温焼成の２段階で行い、前記高温焼成では
0.01〜0.20mol％の銅と、共付活剤としてのハロ
ゲンを添加し、前記低温焼成では0.01〜0.30mol
％の銅と、共付活剤としてのハロゲンを添加した
ことを特徴とするEL用螢光体の製造方法。1. A method of adding copper as an activator and halogen as a co-activator to zinc sulfide and firing it in hydrogen sulfide.
High temperature firing at 900-1100℃ and 500-800℃ in inert gas
It is carried out in two stages: low-temperature firing at ℃, and the high-temperature firing
Adding 0.01 to 0.20 mol% copper and halogen as a co-activator, and 0.01 to 0.30 mol% in the low temperature firing.
% of copper and a halogen as a co-activator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63027749A JPH01204991A (en) | 1988-02-10 | 1988-02-10 | Production of phosphor for el |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63027749A JPH01204991A (en) | 1988-02-10 | 1988-02-10 | Production of phosphor for el |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01204991A JPH01204991A (en) | 1989-08-17 |
| JPH0260704B2 true JPH0260704B2 (en) | 1990-12-18 |
Family
ID=12229679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63027749A Granted JPH01204991A (en) | 1988-02-10 | 1988-02-10 | Production of phosphor for el |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01204991A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5339683B2 (en) * | 2007-03-02 | 2013-11-13 | キヤノン株式会社 | Method of manufacturing phosphor film using multi-source vacuum deposition method |
| US20090212686A1 (en) * | 2008-02-21 | 2009-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Inorganic el blue-light emitting body, method for manufacturing the same, and light emitting device |
| JP5352304B2 (en) | 2008-04-02 | 2013-11-27 | 株式会社半導体エネルギー研究所 | Anthracene derivative, light emitting material, light emitting element material, coating composition, light emitting element, and light emitting device |
| JP5501656B2 (en) | 2008-05-16 | 2014-05-28 | 株式会社半導体エネルギー研究所 | Composition, thin film manufacturing method, and light emitting element manufacturing method |
| JP2010244686A (en) * | 2009-03-31 | 2010-10-28 | Fujifilm Corp | Dispersion-type electroluminescence device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3082344A (en) * | 1960-09-28 | 1963-03-19 | Westinghouse Electric Corp | Method for improving electroluminescent phosphor and electroluminescent lamp |
-
1988
- 1988-02-10 JP JP63027749A patent/JPH01204991A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3082344A (en) * | 1960-09-28 | 1963-03-19 | Westinghouse Electric Corp | Method for improving electroluminescent phosphor and electroluminescent lamp |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01204991A (en) | 1989-08-17 |
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