JPS614398U - Electrode structure of thin film EL panel - Google Patents

Electrode structure of thin film EL panel

Info

Publication number
JPS614398U
JPS614398U JP8990684U JP8990684U JPS614398U JP S614398 U JPS614398 U JP S614398U JP 8990684 U JP8990684 U JP 8990684U JP 8990684 U JP8990684 U JP 8990684U JP S614398 U JPS614398 U JP S614398U
Authority
JP
Japan
Prior art keywords
panel
thin film
electrode structure
electrode
narrowing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8990684U
Other languages
Japanese (ja)
Inventor
秀則 音琴
佳弘 遠藤
順 川口
博 岸下
久 上出
Original Assignee
シャープ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Priority to JP8990684U priority Critical patent/JPS614398U/en
Publication of JPS614398U publication Critical patent/JPS614398U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案に、よる電極構造を示す図、第２図は本
考案による背面Ｎ電極構造例を示す図、第３図は従来の
デット・マトリックス電極構造を有する薄膜ＥＬパネル
の構造を示す斜視図、第４図は従来の電極構造を示す図
である。 符号の説明、１：ガラス基板、２ ： Ｉ．Ｔ．０，透
明電極、３：絶縁層、４：発光層、５：絶縁層、６：背
面ＡＩ電極、７：絵素部、１１：背面Ａ１電極、ｌ ２
： Ｉ，Ｔ，０．透明電極、１３：絵素部、ｄ：′一
Ｎ電極間のギャップ。FIG. 1 is a diagram showing an electrode structure according to the present invention, FIG. 2 is a diagram showing an example of the back N electrode structure according to the present invention, and FIG. 3 is a diagram showing the structure of a thin film EL panel having a conventional dead matrix electrode structure. The perspective view shown in FIG. 4 is a diagram showing a conventional electrode structure. Explanation of symbols: 1: Glass substrate, 2: I. T. 0, transparent electrode, 3: insulating layer, 4: light emitting layer, 5: insulating layer, 6: back AI electrode, 7: picture element part, 11: back A1 electrode, l 2
: I, T, 0. Transparent electrode, 13: picture element part, d: gap between '-N electrodes.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] スリット透過型薄膜ＥＬパネルの電極構造に於いて、絵
素部以外の場所にある比抵抗の低い透過性のない背面電
極幅を細くすることによって透過性を向上させたことを
特徴とする、薄膜ＥＬパネルの電極構造。In the electrode structure of the slit transmission type thin film EL panel, the thin film is characterized in that its transparency is improved by narrowing the width of the non-transparent back electrode with low resistivity located at a location other than the pixel area. Electrode structure of EL panel.
JP8990684U 1984-06-14 1984-06-14 Electrode structure of thin film EL panel Pending JPS614398U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8990684U JPS614398U (en) 1984-06-14 1984-06-14 Electrode structure of thin film EL panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8990684U JPS614398U (en) 1984-06-14 1984-06-14 Electrode structure of thin film EL panel

Publications (1)

Publication Number Publication Date
JPS614398U true JPS614398U (en) 1986-01-11

Family

ID=30644426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8990684U Pending JPS614398U (en) 1984-06-14 1984-06-14 Electrode structure of thin film EL panel

Country Status (1)

Country Link
JP (1) JPS614398U (en)

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