JPS6143067A - Solid-state image pickup device - Google Patents

Abstract

PURPOSE:To reduce a cost by accommodating an electric charge transfer section to a position within the full width of plural photoelectric converting sections so as to attain linear arrangement. CONSTITUTION:The charge transfer sections 2-5 are arranged on a chip where plural photoelectric converting sections 1 are arranged to constitute a linear solid-state image pickup element. Since the charge transfer sections 2-5 are accommodated on one chip within the full width L of the plural photoelectric converting sections 1, the linear arrangement of chips is attained.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application □ The present invention relates to solid-state imaging devices, and particularly to a long contact type image sensor in which a plurality of chips are arranged.

Conventional configurations and their problems In recent years, the development of so-called contact image sensors, which have the same size as a document by arranging multiple chips of -dimensional solid-state image sensors, has been actively progressing, and some of them have reached the level of practical use. I've been doing it. FIG. 1 shows a schematic diagram of a conventional CCD-dimensional solid-state imaging device, and FIG. 2 shows the main part of the path through which charges pass in the structure of FIG. In Figures 1 and 2, (1) is a photoelectric conversion unit, and (2) is a photoelectric conversion unit in which the charges accumulated in (1) are accumulated for a certain period of time and then transferred to a CCD shift register (3). shift gate,
(4) is the input source of the COD, and (5) is the output section. In such a conventional element, the transfer section or the input/output section protrudes outward from the edge pixel (1e). For this reason, when a so-called contact image sensor is made by arranging a plurality of the above conventional chips to have the same size as a document, in order to arrange each pixel without interruption in the pixel arrangement direction, a staggered arrangement is required as shown in Figure 3. Put it away.

In such a staggered contact image sensor, the staggered arrangement requires a memory circuit to compensate for misalignment of pixel lines, and the optical system is also complicated, which increases costs.

OBJECTS OF THE INVENTION It is an object of the present invention to provide a cheaper solid-state imaging device that can be arranged in a straight line.

Structure of the Invention The solid-state imaging device of the present invention configures a one-dimensional solid-state imaging device by arranging a charge transfer section on a chip in which a plurality of photoelectric conversion sections are arranged, and the charge transfer section is arranged on a chip in which a plurality of photoelectric conversion sections are arranged. It is characterized by being housed within the full width of the photoelectric conversion section.

Description of Examples Below - This invention? -Example 4 is shown in Figure 4~j! 6 This will be explained based on FIG. FIG. 4 shows a schematic diagram of a one-dimensional CCD imaging device according to an embodiment of the present invention, and FIG. 5 shows the main part of the path through which charges pass in the structure of FIG. 4. It is something that In Figures 4 and 5, (1) is a photoelectric conversion unit, and (2) is a COD shift register (3) after the charges accumulated in each photoelectric conversion unit (1) are accumulated for a certain period of time. (4) is the COD input source.

(5) is an output section. In the device of this embodiment shown in FIGS. 4 and 5, the charge transfer section A including the input/output section is located inside the pixel (le) at the end of the chip, that is, within the entire width of the photoelectric conversion section (1). It is housed on a chip. Therefore 1
When a contact type solid-state imaging device is manufactured by arranging a plurality of elements of this embodiment, the structure is as shown in FIG. 6, and linear arrangement is possible.

As described in the detailed description of the invention, the solid-state imaging device of the present invention constitutes a one-dimensional solid-state imaging device by arranging a charge transfer section on a chip in which a plurality of photoelectric conversion sections are arranged, and Since the transfer section is housed within the full width of the plurality of photoelectric conversion sections, it is possible to arrange the chips in a straight line, which eliminates the need for complicated corrections in the memory circuit as in the past, making it possible to create a cheaper solid-state imaging device. can be obtained, and its practical effects are great.

[Brief explanation of the drawing]

Claims (1)

[Claims] 1. A one-dimensional solid-state image sensor is constructed by arranging a charge transfer section on a chip in which a plurality of photoelectric conversion sections are arranged, and the charge transfer section is connected to the plurality of photoelectric conversion sections. A solid-state imaging device housed within the full width of the 2. The solid-state imaging device according to claim 1, wherein the charge transfer section is composed of an input/output section, a shift register, and wiring.